Transistor KT3120AM

KT3120AM transistors are silicon epitaxial-planar npn amplifying structures with a normalized noise figure at a frequency of 400 MHz.
Designed for use in the input and subsequent stages of microwave amplifiers.
The main technical characteristics of the transistor KT3120AM:
• Transistor structure: npn
• Рк max - Constant power dissipation of the collector: 100 mW;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 1800 MHz;
• Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 15 V;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V;
• Ik max - Maximum allowable DC collector current: 20 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.5 μA;
• h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: more than 40;
• Sk - Collector junction capacitance: no more than 2 pF;
• tk - Time constant of the feedback circuit at high frequency: no more than 8 ps.