Transistor KT501G Au

The main technical characteristics of the transistor KT501G:
• Transistor structure: pnp;
• Рк max - Constant power dissipation of the collector: 350 mW;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 5 MHz;
• Uкer max - Maximum collector-emitter voltage at a given collector current and a given (final) resistance in the base-emitter circuit: 30 V (10 kOhm);
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 10 V;
• Ik max - Maximum allowable DC collector current: 300 mA;
• Ik and max - The maximum allowable collector pulse current: 500 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA;
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 20... 60;
• Sk - Collector junction capacitance: no more than 50 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 1.3 Ohm.