Transistor MP11A

Manufacturer СНГ
SKU 28237
Categories Domestic transistors
Features
Type Description
Brand name СНГ
Structure NPN
Transistor type Bipolar
Power 150мВт
Transistor case type КТЮ-3-3
Mounting type DIP
Weight g. 1.8
Factory packaging 50pcs
Collector-emitter voltage 15В
Collector current 150мА
Current gain 100
Frequency 2МГц
Description

Main technical characteristics of the MP11A transistor:
• Transistor structure: n-p-n
• Рк max - Constant dissipated collector power: 150 mW;
• fh21b - Limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and common base: not less than 2 MHz;
• Ucbo probe - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V;
• Uebo probe - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V;
• Ik max - Maximum allowable direct collector current: 20 mA;
• h21e - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter and a common base, respectively: 45 ...100;
• Sk - Capacitance of the collector junction: no more than 60 pF.