Transistor 1T906A (=GT906A)

Transistors 1T906A germanium diffusion-alloy structures pnp switching.
Designed for use in voltage converters, switching and pulse amplifying stages of radio electronic devices.
The main technical characteristics of the transistor 1T906A:
• Structure: pnp
• Рк t max - Constant power dissipation of the collector with a heat sink: 15 W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 30 MHz;
• Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 75 V;
• Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 1.4 V;
• Ik max - Maximum allowable DC collector current: 10 A;
• Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 8 mA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 30...150;
• tk - Time constant of the feedback circuit at high frequency: no more than 5000 ps.