Transistor 1T905A

Transistors 1T905A germanium diffusion-alloy structures pnp universal.
Designed for use in switching and pulse amplifying devices, in the output stages of low-frequency power amplifiers.
The main technical characteristics of the transistor 1T905A:
• Structure: pnp
• Рк max - Constant power dissipation of the collector: 6 W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 30 MHz;
• Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 75 V;
• Ik max - Maximum allowable DC collector current: 3 A;
• Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 2 mA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 35...100;
• Sk - Collector junction capacitance: no more than 200 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 0.17 Ohm;
• tk - Time constant of the feedback circuit at high frequency: no more than 300 ps.