Transistor 2T812B (=KT812B)

Main technical characteristics of transistor 2T812B:
• Transistor structure: npn;
• Pk t max - Constant power dissipation of the collector with heat sink: 50 W;
• fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 3 MHz;
• Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 300 V (0.1 kOhm);
• Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 7 V;
• Iк max - Maximum permissible direct collector current: 8 A;
• Iк and max - Maximum permissible pulse current of the collector: 12 A;
• Iker - Reverse collector-emitter current at a given reverse collector-emitter voltage and resistance in the base-emitter circuit: 5 mA (700V);
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 4;
• Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm.