Phototransistor FT-8 gr.A
Доступные скидки
| Название | Скидка | Скидка, % | Цена |
|---|---|---|---|
| 10+ | 0.40 грн. | 5 | 7.60 грн. |
| 50+ | 0.80 грн. | 10 | 7.20 грн. |
| 100+ | 1.60 грн. | 20 | 6.40 грн. |
Designed for use as receivers and sensors of infrared radiation as part of optoelectronic equipment, systems of photoelectric automation and non-contact temperature measurement, computer and measuring equipment.
The main technical parameters of the phototransistor FT-8:
• Photosensitive element size: diameter 0.5 mm;
• Wavelength of maximum spectral distribution of photosensitivity: 0.9...0.95 µm;
• Rated operating voltage: 5 V;
• Dark current: no more than 1 μA;
• Current photosensitivity: not less than 0.2 µA/lx.
| Brand name | СНГ |
| Transistor type | Photo |
| Mounting type | DIP |
| Weight g. | 0.3 |
| Factory packaging | 400pcs |
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