Transistor KP303I Ni

KP303I silicon epitaxial-planar field transistors with a gate based on a pn junction and an n-type channel.

The main technical characteristics of the KP303I transistor:
• Transistor structure: with pn-junction and n-channel;
• Rsi max - Power dissipation drain-source: 200 mW;
• Uzi ots - Transistor cutoff voltage - voltage between gate and source: 0.5... 2 V;
• Usi max - Maximum drain-source voltage: 25 V;
• Uzs max - Maximum gate-drain voltage: 30 V;
• Uzi max - Maximum gate-source voltage: 30 V;
• Ic - Drain current (constant): 20 mA;
• Ic start - Initial drain current: 1.5...5 mA;
• S - Slope of characteristic: 2... 6 mA/V;
• C11i - Transistor input capacitance - capacitance between gate and source: no more than 6 pF;
• C12i - Feedback capacitance in a circuit with a common source in case of a short circuit at the AC input: no more than 2 pF.