Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Diode D312A
#16155
|
28398 | СНГ | — |
3 грн.
|
|
— | Designed for use in pulse devices. | 0.3 | — | — | — | DIP | D104 | 75V | 50mA | — | Pulse | — | — | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||
Diode D9I
#16176
|
28420 | СНГ | — |
2 грн.
|
|
— | The main technical characteristics of the D9I diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 30 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 30 mA; • Iobr - Constant reverse current: no more than 120 µA at Uobr 100 V. | 0.3 | — | — | — | DIP | — | 100V | 30mA | — | Detector | — | — | — | — | 200pcs | — | — | — | — | — | — | single | |||||||
Diode D9Zh
#16177
|
28451 | СНГ | — |
2 грн.
|
|
— | The main technical characteristics of the D9Zh diode: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 15 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 mA; • Iobr - Constant reverse current: no more than 250 μA at Uobr 50 V. | 0.3 | — | — | — | DIP | — | 50V | 15mA | — | Detector | — | — | — | — | 200pcs | — | — | — | — | — | — | single | |||||||
Diode BY550-400
#16180
|
28454 | DIOTEC SEMICONDUCTOR | — |
5 грн.
|
|
— | 0.6 | — | — | — | DIP | DO-201AD | 400V | 5A | — | Fast | — | — | — | — | 1000pcs | — | — | — | — | — | — | single | ||||||||
Diode BY550-600
#16181
|
28455 | DIOTEC SEMICONDUCTOR | — |
6 грн.
|
|
— | 0.6 | — | — | — | DIP | DO-201AD | 600V | 5A | — | Fast | — | — | — | — | 1000pcs | — | — | — | — | — | — | single | ||||||||
Transistor P203E
#16184
|
28428 | СНГ | — |
20 грн.
|
|
— | Characteristics of the transistor P203E: PNP structure Uk-e.max. 55V Uk-b.max. 70V Ik.max (permanent) 2A Ib.max. (permanent) 0.75A Pk.max. (without heatsink) 1.0W Pk.max. (with heat sink) 10W Switching power, max 30W Ik.obr., at t=+20ºC no more than 0.02-0.4mA Ik.obr., at t=+60ºC no more than 0.2-3.5mA h21e 40..100 fgr. 200kHz Ub-e.us 0.5-2.0V Uk-e.us 0.5-2.5V Temperature range -55..+70°C. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 10Вт | 50pcs | 55В | 2А | 0,2МГц | 100 | — | — | — | |||||||
Diode KD202R
#16185
|
28430 | СНГ | — |
9 грн.
|
|
— | Diodes KD202R silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. Are issued in the glass-to-metal case with rigid conclusions. The type of the diode and the connection diagram of the electrodes with the leads are given on the case. Diode weight no more than 5.2 g, with accessories no more than 7 g. Hull type: KDYu-11-2. Specifications: UZh3.362.035 TU. The main technical characteristics of the diode KD202R: • Uobr and max - Maximum impulse reverse voltage: 600 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 600 V | 5.2 | — | — | — | Screw | КД-11 | 600V | 5A | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||
Diode D243
#16187
|
28432 | СНГ | — |
35 грн.
|
|
— | The main technical characteristics of the diode D243: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.25 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 200 V. | 13 | — | — | — | Screw | — | 200V | 10A | — | Rectifier | — | — | — | — | 50pcs | — | — | — | — | — | — | single | |||||||
Diode 2D206A
#16194
|
28440 | СНГ | — |
25 грн.
|
|
— | The main technical characteristics of the diode 2D206A: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.2 V at Inp 1000 mA; • Iobr - DC reverse current: no more than 700 µA at Uobr 400 V; • tvoc - Reverse recovery time: 10 µs. | 5.7 | — | — | — | Screw | КД-11 | 400V | 5A | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||
Avalanche diode DL112-25-12
#16202
|
28448 | СНГ | — |
90 грн.
|
|
— | 6 | — | — | — | Cooler | — | 1200V | 25A | — | Avalanche | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Zener diode KS191S
#16204
|
28450 | СНГ | — |
14 грн.
|
|
— | Zener diodes KS191S silicon, epitaxial, low power, precision, class 0.02. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3...20 mA with high requirements for voltage stability. The main technical parameters of the KS191S zener diode: • Rated stabilization voltage: 9.1 V at Ist 10 mA; • Stabilization voltage spread: 8.65... 9.55 V; • Temperature coefficient of stabilization voltage: ±0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±0.02%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • The maximum allowable power dissipation on the zener diode: 0.2 W. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | 200мВт | 100 pieces. | — | — | — | — | 9V1 | kd-8 | — | |||||||
Diode D226V
#16206
|
28422 | СНГ | — |
4 грн.
|
|
— | The main technical characteristics of the diode D226V: • Uopp max - Maximum direct reverse voltage: 300 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 300 V. | 2 | — | — | — | DIP | КД-8 | 300V | 300mA | — | Rectifier | — | — | — | — | 200pcs | — | — | — | — | — | — | single | |||||||
Diode 1602A (=D7G)
#16208
|
28424 | СНГ | — |
7 грн.
|
|
— | The main technical characteristics of the diode 1602A: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 2.4 kHz; • Unp - DC forward voltage: no more than 0.5 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 200 V. | 2 | — | — | — | DIP | КД-8 | 200V | 300mA | — | Rectifier | — | — | — | — | 200pcs | — | — | — | — | — | — | single | |||||||
Chip K531IR20P (=Am25S09)
#16240
|
28485 | СНГ | — |
10 грн.
|
|
— | 4-bit two-input register. | 1.2 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||
Транзистор КП934Б
#16244
|
28490 | СНГ | — |
36 грн.
|
|
— | Транзистор КП934Б кремниевый планарный полевой со статической индукцией и каналом n-типа. | 17 | — | TO3 | Field | DIP | — | — | — | — | — | MOS n-channel | 300В | 10А | 40Вт | 10 pieces. | — | — | — | — | — | — | — | |||||||
Transistor GT906A
#16252
|
28499 | СНГ | — |
15 грн.
|
|
— | Transistors GT906A germanium diffusion-alloy pnp switching structures. Designed for use in voltage converters, switching and pulse amplifying stages of radio electronic devices. The main technical characteristics of the transistor GT906A: • Structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 15 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 30 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 75 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 1.4 V; • Ik max - Maximum allowable DC collector current: 10 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 8 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 30...150; • tk - Time constant of the feedback circuit at high frequency: no more than 5000 ps. | 3.5 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 15Вт | 100 pieces. | 75В | 10А | 30МГц | 150 | — | — | — | |||||||
Transistor KT827B
#16253
|
28500 | СНГ | — |
100 грн.
|
|
— | Main technical characteristics of the KT827B transistor: • Transistor structure: npn; • Ркт max - Constant power dissipation of the collector with heat sink: 125 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 4 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 80 V (1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 20 A; • Iк and max - Maximum permissible pulse current of the collector: 40 A; • Iker - Reverse collector-emitter current at a given reverse collector-emitter voltage and resistance in the base-emitter circuit: 3 mA (100V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 750... 18000; • Ск - Capacitance of the collector junction: no more than 400 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.2 Ohm. | 15 | — | TO3 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | — | 40pcs | 80В | 20А | 4МГц | 750 | — | — | — | |||||||
Thyristor KU202N
#16257
|
28504 | СНГ | — |
30 грн.
|
— | Silicon thyristors KU202N planar-diffusion, pnpn structures, triode, non-locking. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. | 11 | — | — | — | Screw | — | 400V | 10A | — | — | — | — | — | — | 25pcs | — | — | — | — | — | — | — | ||||||||
Chip K547KP1B
#16288
|
28535 | СНГ | — |
10 грн.
|
|
— | Four channel switch. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||
Chip K547KP1G
#16289
|
28536 | СНГ | — |
10 грн.
|
|
— | Four channel switch. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||
Chip K157ХА1Б
#16290
|
28537 | СНГ | — |
8 грн.
|
|
— | High frequency amplifier with converter. | 1 | DIP14 | — | — | DIP | — | — | — | radio reception | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||
Chip KM573RF2
#16291
|
28538 | СНГ | — |
50 грн.
|
|
— | A storage device with a capacity of 16 kbit (2k x 8) with ultraviolet erasure and electrical recording of information. | 6.5 | DIP24 | — | — | DIP | — | — | — | Memory | — | — | — | — | — | 36pcs | — | — | — | — | — | — | — | |||||||
Transistor KT817G
#16465
|
28712 | СНГ | — |
14 грн.
|
|
— | Transistor KT817G silicon mesa-epitaxial-planar structure npn amplifier. | 0.7 | — | TO126 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 25Вт | 200pcs | 100В | 3А | 3МГц | 40 | — | — | — | |||||||
Transistor GT321D
#16470
|
28720 | СНГ | — |
10 грн.
|
|
— | GT321D transistors are germanium conversion pnp switching structures. Designed for use in switching devices. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 45В | 200мА | 60МГц | 120 | — | — | — | |||||||
Transistor GT321E
#16471
|
28721 | СНГ | — |
10 грн.
|
|
— | GT321E transistors are germanium conversion pnp switching structures. Designed for use in switching devices. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 45В | 200мА | 60МГц | 200 | — | — | — | |||||||
Transistor GT321G
#16472
|
28722 | СНГ | — |
10 грн.
|
|
— | GT321G transistors are germanium conversion pnp switching structures. Designed for use in switching devices. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 45В | 200мА | 60МГц | 60 | — | — | — | |||||||
Transistor KT321V
#16476
|
28725 | СНГ | — |
6 грн.
|
|
— | KT321V silicon transistors, epitaxial-planar pnp pulse structures. Designed for use in pulse amplifiers and switching devices. | 1.5 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 210мВт | 100 pieces. | 50В | 200мА | 60МГц | 200 | — | — | — | |||||||
Optothyristor TO125-12.5-10
#16481
|
28730 | СНГ | — |
170 грн.
|
— | Thyristor TO125-12.5-10 optocoupler, low-frequency, silicon, diffusion, pnpn structure, flange design. Designed for operation in DC and AC circuits with a frequency of up to 500 Hz and a current of no more than 12.5 A. It consists of a silicon photothyristor and a gallium arsenide emitting diode and has a control circuit connected to the power circuit only by a light beam in the absence of galvanic coupling. | 17 | — | — | — | DIP | — | 1000V | 12.5А | — | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | ||||||||
Transistor KT834B
#16517
|
28765 | СНГ | — |
200 грн.
|
|
— | KT834A transistors are silicon mesaplanar npn composite amplifier structures. Designed for use in current and voltage regulators, in switching devices. | 15 | — | TO3 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 100Вт | 20pcs | 450В | 20А | 4МГц | 3000 | — | — | — | |||||||
Transistor 2T812B (=KT812B)
#16518
|
28766 | СНГ | — |
70 грн.
|
|
— | Main technical characteristics of transistor 2T812B: • Transistor structure: npn; • Pk t max - Constant power dissipation of the collector with heat sink: 50 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 3 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 300 V (0.1 kOhm); • Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 7 V; • Iк max - Maximum permissible direct collector current: 8 A; • Iк and max - Maximum permissible pulse current of the collector: 12 A; • Iker - Reverse collector-emitter current at a given reverse collector-emitter voltage and resistance in the base-emitter circuit: 5 mA (700V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 4; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. | 15 | — | TO3 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 50Вт | 40pcs | 300В | 10А | 3МГц | — | — | — | — |