Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Diode KD103B
#14625
|
26841 | СНГ | — |
2 грн.
|
|
— | The main technical characteristics of the KD103B diode: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 50 mA; • fd - Operating frequency of the diode: 20 kHz; • Unp - DC forward voltage: no more than 1.2 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 0.5 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 4 µs; • Sd - Total capacitance: 20 pF at Uobr 5 V. | 0.1 | — | — | — | DIP | КД-30 | 50V | 100mA | — | — | Rectifier | — | — | 500pcs | — | — | — | — | — | — | single | |||||||
Transistor KT501G Au
#14627
|
26844 | СНГ | — |
20 грн.
|
|
— | The main technical characteristics of the transistor KT501G: • Transistor structure: pnp; • Рк max - Constant power dissipation of the collector: 350 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 5 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given (final) resistance in the base-emitter circuit: 30 V (10 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 10 V; • Ik max - Maximum allowable DC collector current: 300 mA; • Ik and max - The maximum allowable collector pulse current: 500 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 20... 60; • Sk - Collector junction capacitance: no more than 50 pF; • Rke us - Saturation resistance between collector and emitter: no more than 1.3 Ohm. | 0.6 | — | КТ-1-7 | Bipolar | DIP | — | — | — | — | — | — | PNP | 350мВт | 100 pieces. | 30В | 300мА | 5МГц | 60 | — | — | — | |||||||
Diode bridge KBP310 (=RS307)
#14670
|
26888 | SEP | — |
5 грн.
|
|
— | Diode bridge KBP310 3A 1000V. | 2 | — | — | — | DIP | — | 1000V | 3.0A | — | — | — | — | — | 250pcs | — | — | — | — | — | — | — | |||||||
Chip KR145IP7
#14943
|
27159 | СНГ | — |
20 грн.
|
|
— | ALU with memory and control devices. | 4.2 | — | — | — | SMD | — | — | — | — | Microcontrollers | — | — | — | 70pcs | — | — | — | — | — | — | — | |||||||
Diode 2D106A
#15061
|
27276 | СНГ | — |
7 грн.
|
|
— | Diodes 2D106A silicon, diffusion, rectifier. Are intended for work in rectifying and pulse devices of the equipment of a special purpose. Are issued in the metalplastic case with flexible outputs. The metal base is connected to the positive electrode. The main technical characteristics of the diode 2D106A: • Uobr and max - Maximum impulse reverse voltage: 100 V; • Inp max - Maximum forward current: 300 mA; • Inp and max - Maximum pulse forward current: 3 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 10 μA at Uobr 100 V; • tvoc arr - Reverse recovery time: 0.385 µs; • Sd - Total capacitance: 74... 153 pF at Uobr 5 V. | 0.4 | — | — | — | DIP | — | 100V | 300mA | 3A | — | Rectifier | — | — | 200pcs | — | — | — | — | — | — | single | |||||||
Indicator IVLM1-1/7
#15062
|
27277 | СНГ | — |
50 грн.
|
|
— | Indicators IVLM1-1/7 graphic vacuum luminescent, green glow. Designed to display information in the form of letters, numbers, symbols, special characters in the means of displaying information. The body is cylindrical glass, the leads are flexible. Main technical characteristics Indicators IVLM1-1/7: • Filament voltage ...... 2.4 V • Glow current ...... 35 ±5 mA • Anode-segment voltage ...... 20 V • Anode-segment current total ...... no more than 10 mA • Minimum operating time ...... 20000 h. | 5 | — | — | — | DIP | — | — | — | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | |||||||
Radio tube 6N16B-I
#15063
|
27278 | СНГ | — |
60 грн.
|
|
— | 6N16B-I, double triode for amplifying low-frequency voltage, generating high-frequency oscillations and for working in relaxation circuits. Design - in a glass shell, subminiature. | 3.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | |||||||
Optocoupler TLP291-4GB
#15073
|
27288 | TOSHIBA | — |
37 грн.
|
|
— | 0.5 | SO16 | — | — | SMD | — | — | — | — | — | — | — | — | 2000pcs | — | — | — | — | — | — | — | ||||||||
Transistor GT403G
#15473
|
27712 | СНГ | — |
17 грн.
|
|
— | Транзистор ГТ403Г германиевый сплавный структуры p-n-p усилительный. Предназначен для применения в переключающих устройствах, выходных каскадах усилителей низкой частоты, преобразователях и стабилизаторах постоянного тока. | 3 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 4Вт | 100 pieces. | 45В | 1,25А | — | 150 | — | — | — | |||||||
Transistor P29
#15474
|
27713 | СНГ | — |
6 грн.
|
|
— | Transistors P29 low power germanium alloy transistors, medium frequency, pnp conductivity. Are intended for work in the radio equipment in the switching and impulse modes. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | 30мВт | 100 pieces. | 12В | 6mA | 5МГц | 50 | — | — | — | |||||||
Diode D101
#15475
|
27714 | СНГ | — |
3 грн.
|
|
— | Диоды Д101 кремниевые, точечные, универсальные. Предназначены для работы в видеоканалах телевизоров, в системах АРУ и дискриминаторах ЧМ и AM приемников. | 0.3 | — | — | — | DIP | D104 | 75V | 30mA | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||
Photoresistor FSD-G1
#15479
|
27719 | СНГ | — |
25 грн.
|
— | The main technical parameters of the photoresistor FSD-G1: • Working voltage - constant voltage, at which nominal values of its parameters are provided: 20 V; • Light current - the current flowing through the photoresistor at operating voltage and exposure to a radiation flux of a given intensity and spectral distribution: not less than 1500 μA; • Dark current - current flowing through the photoresistor at operating voltage in the absence of radiation flux in the spectral sensitivity range: not more than 10 μA; • Dark resistance - the resistance of the photoresistor in the absence of radiation incident on it in the range of its spectral sensitivity: not less than 2 mOhm; • Multiplicity of change in resistance - the ratio of the resistance of the photoresistor when exposed to a radiation flux: not less than 150; • Current decay time constant - the time during which the light current decreases to a value of 37% of the maximum when the photoresistor is darkened: no more than 50 ms; • Current rise time constant - the time during which the light current increases to a value of 63% of the maximum with a rectangular shape of a single light pulse: no more than 80 ms; • Maximum spectral distribution - wavelength corresponding to the maximum spectral sensitivity of the photoresistor: 0.77 µm. | 6 | — | — | — | DIP | — | — | — | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | ||||||||
Chip K2PP241
#15481
|
27721 | СНГ | — |
10 грн.
|
|
— | Low-power (4 mA) supply voltage regulator for the base circuits of transistors. | 2.5 | SIP-9 | — | — | DIP | — | — | — | — | Nutrition | — | — | — | 50pcs | — | — | — | — | — | — | — | |||||||
Zener diode KS620A
#15483
|
27723 | СНГ | — |
10 грн.
|
|
— | The main technical parameters of the KS620A zener diode: • Rated stabilization voltage: 120 V at Ist 50 mA; • Stabilization voltage spread: 103... 132 V; • Temperature coefficient of stabilization voltage: ±0.2%/°С; • Zener diode differential resistance: 150 Ohm at Ist 50 mA; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 42 mA; • Maximum allowable power dissipation on the zener diode: 5 watts. | 1.5 | — | — | — | Screw | — | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 120V | ks620 | — | |||||||
Diode KD226G
#15529
|
27768 | СНГ | — |
7 грн.
|
|
— | Основные технические характеристики диода КД226Г: • Uoбp max - Максимальное постоянное обратное напряжение: 600 В; • Inp max - Максимальный прямой ток: 1,7 А; • fд - Рабочая частота диода: 50 кГц; • Unp - Постоянное прямое напряжение: не более 1,4 В при Inp 1,7 А; • Ioбp - Постоянный обратный ток: не более 50 мкА при Uoбp 600 В; • tвoc обр - Время обратного восстановления: 0,25 мкс. | 1 | — | — | — | DIP | — | 600V | 1.7A | — | — | Rectifier | — | — | 1000pcs | — | — | — | — | — | — | single | |||||||
Chip KR580VG18
#15787
|
28023 | СНГ | — |
20 грн.
|
|
— | Bus controller for 16 inputs (common bus arbiter). | 4 | DIP28 | — | — | DIP | — | — | — | — | Logics | — | — | — | 36pcs | — | — | — | — | — | — | — | |||||||
Diode assembly KDS523AR
#15847
|
28080 | СНГ | — |
2 грн.
|
|
— | Diode assembly consisting of two silicon planar-epitaxial pulse diodes with separate terminals. | 1 | — | — | — | DIP | — | 50V | 20mA | — | — | Pulse | — | — | 50pcs | — | — | — | — | — | — | assembly | |||||||
Chip KR565RU5B
#15899
|
28131 | СНГ | — |
18 грн.
|
|
— | 64 kbit (64k x 1) dynamic random access memory with control circuits. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Memory | — | — | — | 90pcs | — | — | — | — | — | — | — | |||||||
Chip KR531IE14 (=SN74S196)
#15901
|
28135 | СНГ | — |
8 грн.
|
|
— | <p>Asynchronous preset BCD counter.</p> | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||
Diode D229E
#15976
|
28210 | СНГ | — |
7 грн.
|
|
— | D229E silicon diffusion diodes. Designed to convert alternating voltage with a frequency of up to 1 kHz. | 3.5 | — | — | — | Screw | — | 400V | 400mA | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||
Transistor MP11A
#16002
|
28237 | СНГ | — |
10 грн.
|
|
— | Main technical characteristics of the MP11A transistor: • Transistor structure: n-p-n • Рк max - Constant dissipated collector power: 150 mW; • fh21b - Limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and common base: not less than 2 MHz; • Ucbo probe - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo probe - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Ik max - Maximum allowable direct collector current: 20 mA; • h21e - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter and a common base, respectively: 45 ...100; • Sk - Capacitance of the collector junction: no more than 60 pF. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 150мВт | 50pcs | 15В | 150мА | 2МГц | 100 | — | — | — | |||||||
Diode 1N5407
#16088
|
28328 | MIC | — |
3 грн.
|
|
— | 1 | — | — | — | DIP | DO-201AD | 800V | 3.0A | — | — | Rectifier | — | — | 500pcs | — | — | — | — | — | — | — | ||||||||
Diode 1N5402
#16102
|
28342 | MIC | — |
3 грн.
|
|
— | 1 | — | — | — | DIP | DO-201AD | 200V | 3.0A | — | — | Rectifier | — | — | 500pcs | — | — | — | — | — | — | — | ||||||||
Diode 1N5400
#16103
|
28343 | MIC | — |
3 грн.
|
|
— | 1 | — | — | — | DIP | DO-201AD | 50V | 3.0A | — | — | Rectifier | — | — | 500pcs | — | — | — | — | — | — | — | ||||||||
Diode D233
#16143
|
28383 | СНГ | — |
40 грн.
|
|
— | The main technical characteristics of the diode D233: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 500 V. | 11 | — | — | — | Screw | КДЮ-11 | 500V | 10A | — | — | Rectifier | — | — | 40pcs | — | — | — | — | — | — | single | |||||||
Diode D312A
#16155
|
28398 | СНГ | — |
3 грн.
|
|
— | Designed for use in pulse devices. | 0.3 | — | — | — | DIP | D104 | 75V | 50mA | — | — | Pulse | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||
Diode D9I
#16176
|
28420 | СНГ | — |
2 грн.
|
|
— | The main technical characteristics of the D9I diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 30 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 30 mA; • Iobr - Constant reverse current: no more than 120 µA at Uobr 100 V. | 0.3 | — | — | — | DIP | — | 100V | 30mA | — | — | Detector | — | — | 200pcs | — | — | — | — | — | — | single | |||||||
Diode D9Zh
#16177
|
28451 | СНГ | — |
2 грн.
|
|
— | The main technical characteristics of the D9Zh diode: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 15 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 mA; • Iobr - Constant reverse current: no more than 250 μA at Uobr 50 V. | 0.3 | — | — | — | DIP | — | 50V | 15mA | — | — | Detector | — | — | 200pcs | — | — | — | — | — | — | single | |||||||
Diode BY550-400
#16180
|
28454 | DIOTEC SEMICONDUCTOR | — |
5 грн.
|
|
— | 0.6 | — | — | — | DIP | DO-201AD | 400V | 5A | — | — | Fast | — | — | 1000pcs | — | — | — | — | — | — | single | ||||||||
Diode BY550-600
#16181
|
28455 | DIOTEC SEMICONDUCTOR | — |
6 грн.
|
|
— | 0.6 | — | — | — | DIP | DO-201AD | 600V | 5A | — | — | Fast | — | — | 1000pcs | — | — | — | — | — | — | single |