Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Diode design |
|---|
Transistor KT865A
#14416
|
26625 | СНГ | — |
80 грн.
|
|
— | Transistor KT865A silicon epitaxial-planar structure pnp pulse. Designed for use in secondary power supplies, converters, end stages of audio frequency amplifiers, voltage stabilizers. | 16 | — | TO3 | Bipolar | DIP | — | — | — | — | — | PNP | 100Вт | 20pcs | 200В | 10А | 15МГц | 200 | — | |||||||||
Transistor KT854A
#14417
|
26626 | СНГ | — |
20 грн.
|
|
— | Transistors KT854A silicon epitaxial-planar structures npn amplifying. Designed for use in converters, linear stabilizers. | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | NPN | 60Вт | 100 pieces. | 500В | 10А | — | 20 | — | |||||||||
Transistor KT850A
#14418
|
26627 | СНГ | — |
22 грн.
|
|
— | Transistors KT850A silicon mezaplanar structures npn amplifying. Designed for use in power amplifiers, switching devices. | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | NPN | 25Вт | 100 pieces. | 200В | 2А | 20МГц | 200 | — | |||||||||
Transistor 1T901A
#14419
|
26628 | СНГ | — |
30 грн.
|
|
— | Transistors germanium diffusion-alloy pnp switching high-frequency powerful. | 25 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 15Вт | 20pcs | 50В | 10А | 30МГц | 60 | — | |||||||||
Transistor KT859A
#14420
|
26629 | СНГ | — |
12 грн.
|
|
— | Transistor KT859A silicon mezaplanar structure npn switching. Designed for use in amplifiers and switching devices. | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | NPN | 40Вт | 100 pieces. | 800В | 3А | 10МГц | 10 | — | |||||||||
Transistor KT326BM
#14421
|
26630 | СНГ | — |
3 грн.
|
|
— | Transistors KT326BM silicon epitaxial-planar structures pnp amplifying, high-frequency. Designed for use in high and ultra high frequency amplifiers and switching devices. | 0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | PNP | 200мВт | 1000pcs | 15В | 50мА | 250МГц | 160 | — | |||||||||
Chip K145IK1914
#14426
|
26635 | СНГ | — |
25 грн.
|
|
— | Control microprocessor. | 3.2 | — | — | — | DIP | — | — | — | Microcontrollers | — | — | — | 32pcs | — | — | — | — | — | |||||||||
Chip K145IK1801
#14427
|
26636 | СНГ | — |
20 грн.
|
|
— | Controller for interfacing computing facilities with sensors of the control and measuring complex. | 3.2 | — | — | — | DIP | — | — | — | Microcontrollers | — | — | — | 32pcs | — | — | — | — | — | |||||||||
Chip K145IK1802
#14428
|
26637 | СНГ | — |
20 грн.
|
|
— | Printer management. | 3.2 | — | — | — | DIP | — | — | — | Microcontrollers | — | — | — | 32pcs | — | — | — | — | — | |||||||||
Chip K145IK1303A
#14430
|
26639 | СНГ | — |
20 грн.
|
|
— | arithmetic processor. | 3.7 | — | — | — | DIP | — | — | — | Microcontrollers | — | — | — | 32pcs | — | — | — | — | — | |||||||||
Chip K145VV7P
#14432
|
26641 | СНГ | — |
20 грн.
|
|
— | Input device 8-lower digits. | 4 | — | — | — | DIP | — | — | — | Interfaces | — | — | — | 32pcs | — | — | — | — | — | |||||||||
Chip KR145IK1908
#14433
|
26642 | СНГ | — |
20 грн.
|
|
— | Timer programmer. | 4 | — | — | — | DIP | — | — | — | Timers | — | — | — | 100 pieces. | — | — | — | — | — | |||||||||
Chip K145IK1807
#14438
|
26649 | СНГ | — |
20 грн.
|
|
— | A microcontroller designed to control peripheral devices. | 4 | — | — | — | DIP | — | — | — | Microcontrollers | — | — | — | 40pcs | — | — | — | — | — | |||||||||
Chip KM133LA1
#14444
|
26656 | СНГ | — |
8 грн.
|
|
— | Two logical elements 4I-NOT, one expandable by OR. | 0.5 | SO14 | — | — | SMD | — | — | — | Logics | — | — | — | 40pcs | — | — | — | — | — | |||||||||
| 26657 | PHILIPS | — |
24 грн.
|
|
— | Color corrector. | 1.5 | DIP18 | — | — | DIP | — | — | — | TV | — | — | — | 70pcs | — | — | — | — | — | ||||||||||
Chip KR531TV9 (=SN74S112)
#14446
|
26658 | СНГ | — |
6 грн.
|
|
— | Double JK flip-flop. | 1.1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | |||||||||
Chip K224UN4
#14447
|
26659 | СНГ | — |
12 грн.
|
|
— | A low-frequency amplifier for use in low-frequency radio communications equipment as a ULF with automatic gain control, as well as a generator of sinusoidal oscillations with a stable amplitude. | 1 | ZIP-9 | — | — | DIP | — | — | — | Amplifiers | — | — | — | 20pcs | — | — | — | — | — | |||||||||
Chip KR504NT3V
#14462
|
26674 | СНГ | — |
7 грн.
|
|
— | Made on the basis of field-effect transistors with pn junction and p-channel. It is a low-current matched pair of field-effect transistors designed for use in the input stages of DC amplifiers, in differential and operational amplifiers and switches. | 0.5 | DIP8 | — | — | DIP | — | — | — | Transistor Assembly | — | — | — | 200pcs | — | — | — | — | — | |||||||||
Transistor GT320B
#14474
|
26685 | СНГ | — |
12 грн.
|
|
— | Transistors GT320B germanium diffusion-alloy structures pnp switching. Designed for use in high frequency amplifiers and switching devices. | 1.8 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | PNP | 200мВт | 100 pieces. | 11В | 150мА | 80МГц | 120 | — | |||||||||
Transistor GT308A
#14475
|
26686 | СНГ | — |
7 грн.
|
|
— | Transistors GT308A germanium diffusion-alloy structures pnp universal. Designed for use in oscillators, power amplifiers, pulse devices. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 15В | 50мА | 100МГц | 75 | — | |||||||||
Transistor P401
#14476
|
26687 | СНГ | — |
8 грн.
|
|
— | Transistors P401 - germanium, amplifying low-power, high-frequency, structures - pnp. Designed for use in amplifying and generator stages of shortwave and ultrashortwave radio transmitting devices. | 1.8 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | PNP | 100мВт | 100 pieces. | 10В | 20мА | 30МГц | 300 | — | |||||||||
Transistor P403VP
#14477
|
26688 | СНГ | — |
9 грн.
|
|
— | Transistor P403VP - germanium, amplifying low-power, high-frequency, structures - pnp. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | 100мВт | 100 pieces. | 10В | 20мА | 120МГц | 100 | — | |||||||||
Transistor P403A
#14478
|
26689 | СНГ | — |
10 грн.
|
|
— | Transistor P403A - germanium, amplifying low-power, high-frequency, structures - pnp. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | 100мВт | 100 pieces. | 10В | 20мА | 120МГц | 200 | — | |||||||||
Transistor P423
#14479
|
26690 | СНГ | — |
10 грн.
|
|
— | Germanium transistors, diffusion-alloyed, pnp, amplifying, low-power with a normalized noise figure at a frequency of 1.6 MHz. Are intended for work in amplifying and generator cascades HF cascades. | 1.5 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | 100мВт | 100 pieces. | 10В | 20мА | 120МГц | 100 | — | |||||||||
Transistor BU508AW
#14483
|
26695 | ST MICROELECTRONICS | — |
64 грн.
|
|
— | 5.3 | — | TO247 | Bipolar | DIP | — | — | — | — | — | NPN | 125Вт | 25pcs | 700В | 8А | — | — | — | ||||||||||
Transistor KT3120AM
#14484
|
26696 | СНГ | — |
15 грн.
|
|
— | KT3120AM transistors are silicon epitaxial-planar npn amplifying structures with a normalized noise figure at a frequency of 400 MHz. Designed for use in the input and subsequent stages of microwave amplifiers. The main technical characteristics of the transistor KT3120AM: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 100 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 1800 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 15 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.5 μA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: more than 40; • Sk - Collector junction capacitance: no more than 2 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 8 ps. | 0.2 | — | КТ-14 | Bipolar | SMD | — | — | — | — | — | NPN | 100мВт | 20pcs | 15В | 20мА | — | 40 | — | |||||||||
Chip KR1533TM2
#14488
|
26702 | СНГ | — |
7 грн.
|
|
— | Two D-flip-flops synchronous with complementary inputs and independent setting to the state of log.0 (R1, R2) and log.1 (S1, S2). | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | |||||||||
Diode KD243B
#14490
|
26705 | СНГ | — |
2 грн.
|
|
— | Diodes KD243B silicon, diffusion, rectifier. Are intended for transformation of alternating voltage with a frequency up to 70 kHz. The main technical characteristics of the KD243B diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 1 A; • Inp and max - Maximum pulse forward current: 6 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.1 V at Inp 1 A; • Iobr - Constant reverse current: no more than 10 μA at Uobr 100 V. | 0.4 | — | — | — | DIP | КД-4 | 100V | 1A | — | Rectifier | — | — | 1000pcs | — | — | — | — | single | |||||||||
Diode D2D reduced
#14498
|
26714 | СНГ | — |
3 грн.
|
|
— | Diodes D2D germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2D: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 4.5 mA; • Iobr - Constant reverse current: no more than 250 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.3 | — | — | — | DIP | КД-4 | 50V | 16mA | — | Detector | — | — | 200pcs | — | — | — | — | single | |||||||||
Diode D220B
#14526
|
26742 | СНГ | — |
2 грн.
|
|
— | Silicon diode, alloyed, pulsed. The main technical characteristics of the diode D220B: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 50 mA; • Inp and max - Maximum pulse forward current: 0.5 A; • Sd - Total capacitance: 15 pF at Uobr 5 V; • Unp - DC forward voltage: no more than 1.5 V at Inp 50 mA; • Iobr - Constant reverse current: no more than 1 μA at Uobr 100 V. | 0.3 | — | — | — | DIP | D104 | 100V | 50mA | — | Rectifier | — | — | 100 pieces. | — | — | — | — | single |
