Active radio components

Results: 8086

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Transistor case type Transistor type Mounting type Urev. max, V Ipr. max. Appointment Diode type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
26511 СНГ
19 грн.
10+17,10 грн.
50+15,20 грн.
Silicon triac, planar, pnpn structures, triode, non-lockable, symmetrical. 11 Screw 100V 5A 40pcs
26513 СНГ
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
The K1401CA1 microcircuits are a quad (four-channel) medium-precision voltage comparator. 1.8 DIP14 DIP Comparators 100 pieces.
26515 СНГ
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
DC differential amplifier. 1 DIP14 DIP Amplifiers 100 pieces.
26516 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
3 logic elements 3(AND-OR). 1 DIP14 DIP Logics 100 pieces.
26519 СНГ
28 грн.
10+26,60 грн.
50+25,20 грн.
100+22,40 грн.
An analogue signal sampling and storage device. 1 DIP14 DIP Logics 100 pieces.
26520 СНГ
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
16-bit super-rapid memory with control circuits. 1.5 DIP16 DIP Memory 90pcs
26521 СНГ
18 грн.
10+17,10 грн.
50+16,20 грн.
100+14,40 грн.
Quadruple programmable operational amplifier with internal frequency correction. 1.5 DIP16 DIP Amplifiers 100 pieces.
26525 СНГ
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Current controlled quad op amp. 1.2 DIP16 DIP Amplifiers 90pcs
26528 СНГ
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Twelve bit binary counter. 1 DIP16 DIP Logics 100 pieces.
26530 СНГ
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
KR504NT2A Made on the basis of field-effect transistors with pn junction and p-channel. KR504NT2A microcircuits are a low-current matched pair of field-effect transistors designed for use in the input stages of DC amplifiers, in differential and operational amplifiers and switches. 0.5 DIP8 DIP Transistor Assembly 200pcs
26531 СНГ
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
KR504NT3B Made on the basis of field-effect transistors with pn junction and p-channel. KR504NT3B microcircuits are a high-current matched pair of field-effect transistors with a pn junction and a p-channel, designed for use in the input stages of DC amplifiers, in differential and operational amplifiers and switches. 0.5 DIP8 DIP Transistor Assembly 200pcs
26532 СНГ
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Two monostable multivibrators. 1.2 DIP16 DIP Logics 90pcs
26533 СНГ
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
The KR198NT3B microcircuit is a matrix of npn transistors. 1 DIP14 DIP Transistor Assembly 100 pieces.
26538 СНГ
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
KR544UD2B microcircuits are broadband operational differential amplifiers with high input impedance and increased speed. They are used to create video amplifiers, pulse amplifiers, amplifiers for photodetectors, generators of high-frequency oscillations. 0.5 DIP8 DIP Amplifiers 200pcs
26539 СНГ
26 грн.
10+24,70 грн.
50+23,40 грн.
100+20,80 грн.
KR1100SK2 microcircuits are an analog signal sampling and storage device, which, by storing the instantaneous value of the input analog signal by a command received at the logic input, maintains a constant output voltage equal to it for a certain time with high accuracy. The KR1100SK2 includes an input operational amplifier, an output operational amplifier and an analog switch control circuit. 0.5 DIP8 DIP Logics 200pcs
26540 СНГ
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Two D flip-flops. 1 DIP14 DIP Logics 100 pieces.
26544 СНГ
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Reversible shift register. 1.2 DIP16 DIP Logics 90pcs
26545 СНГ
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
3 logical elements 3OR-NOT. 1 DIP14 DIP Logics 100 pieces.
26547 HTC
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
2.5 TO-220 DIP Nutrition 50pcs
26548 СНГ
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Fast multiplier 2x4. 7 DIP24 DIP Logics 36pcs
26561 СНГ
68 грн.
10+64,60 грн.
50+61,20 грн.
100+54,40 грн.
The K174PS4 microcircuit is a double balanced mixer. It is intended for use as a frequency mixer in the frequency range up to 1000 MHz, a modulator, an amplifier in blocks of channel selectors for UHF TVs. It differs from mixers on discrete devices by the absence or attenuation of components with signal and local oscillator frequencies in the output signal spectrum and good decoupling between the local oscillator circuit and the input. The leakage of the local oscillator voltage to the input of the receiver is 40-50 dB. 1 DIP14 DIP TV 20pcs
26563 СНГ
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
The microcircuit contains 4 NPN silicon transistors. The microcircuit is used in speed controllers of low-power DC motors. 1 DIP14 DIP Transistor Assembly 100 pieces.
26569 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Four logic elements 2I-NOT with high load capacity. 1 DIP16 DIP Logics 200pcs
26570 СНГ
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
High Gain Video Amplifier. 1 DIP14 DIP Video 100 pieces.
26576 СНГ
7 грн.
The main technical characteristics of the KTs405V diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 400 V. 5.2 DIP 400V 1A Diode bridge 500pcs
26579 СНГ
20 грн.
Block of silicon, diffusion diodes. The main technical characteristics of the KTs402V diode: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 400 V. 5.7 DIP 400V 1A Diode bridge 100 pieces.
26617 СНГ
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
Transistor silicon mesaepitaxial-planar structure npn switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP NPN 60Вт 100 pieces. 50В 10А 3МГц 20
26620 СНГ
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
Transistor silicon mezaplanar structure npn. Designed for use in amplifiers, pulse and high-frequency switching devices. 0.7 TO126 Bipolar DIP NPN 400мВт 200pcs 250В 100мА 40МГц 40
26621 СНГ
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
KT855A transistors are silicon epitaxial-planar structures pnp amplifying. Designed for use in converters, linear voltage stabilizers. 2.5 TO220 Bipolar DIP PNP 40Вт 100 pieces. 200В 5МГц 20
26622 СНГ
18 грн.
10+17,10 грн.
50+16,20 грн.
100+14,40 грн.
Transistors KT829A silicon mezaplanar structures npn compound amplifying. Designed for use in low-frequency amplifiers, switching devices. 2.5 TO220 Bipolar DIP NPN 60Вт 200pcs 100В 4МГц 750