Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Transistor KT837K
#13948
|
26127 | СНГ | — |
12 грн.
|
|
— | Transistors KT837K silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT837K: • Transistor structure: pnp; • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 1 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 45 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 50... 150; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 2 | — | TO220 | Bipolar | DIP | — | — | — | — | — | — | PNP | — | 200pcs | 40В | 7,5A | 1МГц | 150 | — | — | — | |||||||
Diode D7Zh
#13950
|
26130 | СНГ | — |
9 грн.
|
|
— | Diodes germanium D7Zh, alloy. The main technical characteristics of the D7Zh diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 2.4 kHz; • Unp - DC forward voltage: no more than 0.5 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V. | 1.6 | — | — | — | DIP | КД-8 | 300V | 300mA | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||
Diode bridge KTS407A
#13951
|
26131 | СНГ | — |
30 грн.
|
— | KTS407A A block of silicon, mesadiffusion diodes connected in a bridge circuit. Available in a plastic case with flexible leads. The main technical characteristics of the diode KTS407A: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 500 mA; • Inp and max - Maximum pulse forward current: 3 A; • fd - Operating frequency of the diode: 20 kHz; • Iobr - Constant reverse current: no more than 5 μA at Uobr 400 V; • tvoc - Reverse recovery time: 5 µs. | 0.5 | — | — | — | DIP | — | 400V | 500mA | 3A | — | Diode bridge | — | — | 500pcs | — | — | — | — | — | — | — | ||||||||
Varicap KV105B
#13953
|
26133 | СНГ | — |
10 грн.
|
— | 1.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||
Diode D2V
#13957
|
26137 | СНГ | — |
3 грн.
|
|
— | Diodes D2V germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2V: • Uopp max - Maximum direct reverse voltage: 30 V; • Inp max - Maximum forward current: 25 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 9 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 30 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | DIP | КД-4 | 30V | 25mA | — | — | Detector | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||
Diode D2G
#13958
|
26138 | СНГ | — |
3 грн.
|
|
— | Diodes D2G germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2G: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 2 mA; • Iobr - Constant reverse current: no more than 250 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | DIP | КД-4 | 50V | 16mA | — | — | Detector | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||
Diode D2D
#13959
|
26139 | СНГ | — |
3 грн.
|
|
— | Diodes D2D germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2D: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 4.5 mA; • Iobr - Constant reverse current: no more than 250 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | DIP | КД-4 | 50V | 16mA | — | — | Detector | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||
Diode D2E
#13960
|
26140 | СНГ | — |
3 грн.
|
|
— | Diodes D2E germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the D2E diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 4.5 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 100 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | DIP | КД-4 | 100V | 16mA | — | — | Detector | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||
Diode D2I
#13962
|
26142 | СНГ | — |
3 грн.
|
|
— | Diodes D2I germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2I: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 2 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 100 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | DIP | КД-4 | 100V | 16mA | — | — | Detector | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||
Zener diode KS133A met.
#13963
|
26143 | СНГ | — |
4 грн.
|
|
— | The main technical parameters of the KS133A zener diode: • Rated stabilization voltage: 3.3 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.11%/°С; • Constant forward voltage: 1 V at Ipr 50 mA; • Zener diode differential resistance: 65 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 81 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Ambient temperature operating range: -60... +125 °С | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | 3V3 | kd-8 | — | |||||||
Zener diode KS515A
#13966
|
26146 | СНГ | — |
15 грн.
|
|
— | The main technical parameters of the KS515A zener diode: • Rated stabilization voltage: 15 V at Ist 5 mA; • Stabilization voltage spread: 13.5... 16.5 V; • Temperature coefficient of stabilization voltage: 0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 200 Ohm at Ist 1 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 53 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | 1Вт | 200pcs | — | — | — | — | 15V | kd-8 | — | |||||||
Chip KM555TM9
#14007
|
26186 | СНГ | — |
5 грн.
|
|
— | Six D flip-flops. | 1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | |||||||
Chip TDA7381
#14042
|
26221 | ST MICROELECTRONICS | — |
78 грн.
|
|
— | 9.2 | FLEXIWATT25 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 17pcs | — | — | — | — | — | — | — | ||||||||
Zener diode KS213B
#14113
|
26291 | СНГ | — |
8 грн.
|
|
— | Zener diodes KS213B silicon, alloy, two-anode, low power. Designed to stabilize the nominal voltage of 13 V in the stabilization current range of 3...10 mA and to limit the voltage on both sides. The main technical parameters of the KS213B zener diode: • Rated stabilization voltage: 13 V at Ist 5 mA; • Temperature coefficient of stabilization voltage: 0.08%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 25 Ohm at Ist 5 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 10 mA; • The maximum allowable power dissipation on the zener diode: 0.15 W. | 0.3 | — | — | — | DIP | — | — | — | — | — | — | — | 150мВт | 200pcs | — | — | — | — | 13V | — | — | |||||||
| 26304 | Silan Semiconductor | — |
76 грн.
|
|
— | 5.7 | — | TO247 | IGBT | DIP | — | — | — | — | — | — | — | 321Вт | 30pcs | 600В | 60А | — | — | — | — | — | |||||||||
Generator lamp GU-70B
#14129
|
26310 | СНГ | — |
800 грн.
|
|
— | The generator tetrode GU-70B in ceramic-metal design with an indirectly heated oxide cathode and an external anode with forced air cooling is designed to amplify a single-sideband signal with an output power of up to 250 W, as well as to amplify power at frequencies up to 250 MHz and with an output power of up to 125 W in stationary and mobile radio engineering devices for industrial purposes. | 135 | — | — | — | Panel | — | — | — | — | — | — | — | — | 1 PC. | — | — | — | — | — | — | — | |||||||
Chip K561IE10A
#14133
|
26316 | СНГ | — |
10 грн.
|
|
— | Two four-digit counters. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | |||||||
Chip K170UL1
#14137
|
26321 | СНГ | — |
6 грн.
|
|
— | Four-channel unipolar playback amplifier. | 1 | DIP14 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||
Chip K555IE2
#14139
|
26326 | СНГ | — |
10 грн.
|
|
— | Binary decimal counter. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||
Chip K555LR13
#14140
|
26331 | СНГ | — |
10 грн.
|
|
— | Logic element (2-3-3-2) AND-OR-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||
Chip DK124
#14150
|
26342 | SDK | — |
14 грн.
|
|
— | 0.5 | DIP8 | — | — | DIP | — | — | — | — | Nutrition | — | — | — | 50pcs | — | — | — | — | — | — | — | ||||||||
Lamp SMN 6.3-20-2
#14254
|
26453 | СНГ | — |
4 грн.
|
|
— | The subminiature lamp SMN-6.3-20-2 is used in radio and electronic engineering, aviation, rocket technology, medicine, in various instruments and devices as indicator, channel and lighting elements, the dimensions of which are required to be commensurate with the small dimensions of these devices and devices. Rated voltage - 6.3 V Rated electric current - 20 mA Luminous flux: 0.26 lm Average burning time: at least 600 hours Diameter: 3.2mm Length: 9 mm. | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||
Transistor P27A
#14256
|
26455 | СНГ | — |
5 грн.
|
|
— | Transistors P27 germanium alloyed pnp amplifying low-frequency with a normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | 30мВт | 100 pieces. | 5В | 6mA | 1МГц | 60 | — | — | — | |||||||
Stabistor D220S
#14257
|
26456 | СНГ | — |
4 грн.
|
|
— | Stabistors D220S silicon, microalloy, low power. Are intended for stabilization of direct and impulse voltage and limitation of voltage impulses. The main technical parameters of the D220S stabistor: • Rated stabilization voltage at Ist 1 mA: 0.59 V; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 50 mA; • Working range of ambient temperature: -60... +120 °С. | 0.4 | — | — | — | DIP | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | 0.59V | — | — | |||||||
Transistor KT349B
#14260
|
26459 | СНГ | — |
6 грн.
|
|
— | The main technical characteristics of the transistor KT349B: • Transistor structure: pnp; • Рк max - Constant power dissipation of the collector: 200 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given (final) resistance in the base-emitter circuit: 15 V (10 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - The maximum allowable DC collector current: 10 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 40... 160; • Sk - Collector junction capacitance: no more than 6 pF; • Rke us - Saturation resistance between collector and emitter: no more than 30 ohms. | 0.5 | — | КТ-1-7 | Bipolar | DIP | — | — | — | — | — | — | PNP | 200мВт | 100 pieces. | 15В | 40мА | 300МГц | 160 | — | — | — | |||||||
Transistor KT603G
#14261
|
26460 | СНГ | — |
14 грн.
|
|
— | The main technical characteristics of the transistor KT603G: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.5 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 15 V (1kΩ); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 300 mA; • Ik and max - The maximum allowable collector pulse current: 600 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 7 ohms. | 1.5 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 500мВт | 100 pieces. | 15В | 300мА | 200МГц | 60 | — | — | — | |||||||
Power diode V25-9
#14264
|
26463 | СНГ | — |
75 грн.
|
|
— | B25-9 Diffusion silicon diode. It is intended for operation in circuits of static converters of electric power of direct and alternating currents at frequencies up to 2 kHz. Are issued in the glass-to-metal case with a flexible conclusion. Average direct current - 25A Repetitive impulse reverse voltage - 900 V Cooling air natural or forced. | 90 | — | — | — | Screw | — | 900V | 25A | — | — | Rectifier | — | — | 1 PC. | — | — | — | — | — | — | single | |||||||
Transistor P215
#14266
|
26465 | СНГ | — |
15 грн.
|
|
— | Transistors P215 germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. The main technical characteristics of the P215 transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 80 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.3 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20... 150; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. | 9.2 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 10Вт | 40pcs | 70В | 5А | 0,15МГц | 150 | — | — | — | |||||||
Thyristor KU103A1
#14304
|
26504 | СНГ | — |
6 грн.
|
— | The main technical parameters of the thyristor KU103A1: • Maximum DC voltage in closed state: 150 V; • Repetitive pulse current in the open state: 0.001 A; • Pulse voltage in the open state: no more than 3 V; • Non-opening constant control voltage: 0.001 V; • Direct current in the closed state: not less than 0.15 mA; • Constant reverse current: 1 mA; • Unlocking constant control current: 40 mA; • Constant triggering control voltage: 0.4...2 V. | 0.5 | — | — | — | DIP | — | 150V | — | — | — | — | — | — | 200pcs | — | — | — | — | — | — | — | ||||||||
Chip K118TL1D
#14306
|
26509 | СНГ | — |
12 грн.
|
|
— | Schmitt trigger with a maximum pulse repetition rate of 1 MHz. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — |
