Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Diode D243A
#13780
|
25959 | СНГ | — |
35 грн.
|
|
— | Diodes D243A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the diode D243A: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 200 V. | 13 | — | — | — | Screw | — | 200V | 10A | — | Rectifier | — | — | — | — | 50pcs | — | — | — | — | — | — | single | |||||||||
Diode SS310
#13805
|
25984 | WTE | — |
2.50 грн.
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|
— | 0.4 | — | — | — | SMD | SMB | 100V | 3.0A | — | Schottky | — | — | — | — | 3000pcs | — | — | — | — | — | — | single | ||||||||||
Diode SR260
#13806
|
25985 | MIC | — |
1.50 грн.
|
|
— | 0.6 | — | — | — | DIP | DO-15 | 60V | 2A | — | Schottky | — | — | — | — | 500pcs | — | — | — | — | — | — | single | ||||||||||
Diode MUR460
#13807
|
25986 | ON SEMICONDUCTOR | — |
4 грн.
|
|
— | 0.8 | — | — | — | DIP | DO-201AD | 600V | 4А | — | Fast | — | — | — | — | 1000pcs | — | — | — | — | — | — | single | ||||||||||
Diode RS1M
#13808
|
25987 | DIOTEC SEMICONDUCTOR | — |
0.80 грн.
|
|
— | 0.2 | — | — | — | SMD | DO-214AC, SMA | 1000V | 1A | — | Rectifier | — | — | — | — | 5000pcs | — | — | — | — | — | — | single | ||||||||||
Diode column KTS114B
#13811
|
25989 | СНГ | — |
15 грн.
|
|
— | Pillars of silicon, diffusion diodes, rectifiers. Designed for use in high-voltage secondary power supply units with additional sealing. | 1.6 | — | — | — | DIP | — | 6kV | 50mA | — | High voltage | — | — | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||||
Power thyristor Т142-80-12
#13837
|
26015 | СНГ | — |
400 грн.
|
— | Т142-80-12 Thyristor low-frequency pin design. It is intended for work in converting devices, in circuits of direct and alternating current of various power plants. Are issued in the glass-to-metal case with a rigid output. The maximum allowable average direct current in the open state - 80 A Repetitive impulse voltage in the closed state and repetitive impulse reverse voltage - 1200 V Cooling air natural or forced. The designation of the type rating and the polarity of the terminals are given on the case. Dimensions: - total length - 56 mm - hairpin length - 16 mm - thread - M10 | 63 | — | — | — | Screw | — | 1200V | 80A | — | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | ||||||||||
Thyristor 2U202M (=KU202M)
#13838
|
26016 | СНГ | — |
35 грн.
|
— | Silicon thyristors 2U202M planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. | 11 | — | — | — | Screw | — | 400V | 10A | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | ||||||||||
Thyristor 2U202D (=KU202D)
#13839
|
26017 | СНГ | — |
22 грн.
|
— | Silicon thyristors 2U202D, planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. | 11 | — | — | — | Screw | — | 100V | 10A | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | ||||||||||
Thyristor 2U202I (=KU202I)
#13840
|
26018 | СНГ | — |
25 грн.
|
— | Silicon thyristors 2U202I planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. | 11 | — | — | — | Screw | — | 200V | 10A | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | ||||||||||
Transistor 2T803A (=KT803A)
#13841
|
26847 | СНГ | — |
200 грн.
|
|
— | Transistors 2T803A silicon mezaplanar structures npn universal. Designed for use in DC amplifiers, horizontal sweep generators, secondary power supplies. | 19 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 60Вт | 20pcs | 60В | 10А | 20МГц | 50 | — | — | — | |||||||||
Transistor 1T806A (=GT806A)
#13842
|
26019 | СНГ | — |
40 грн.
|
|
— | 1T806A Transistors germanium diffusion-alloy structures pnp switching. Transistors 1T806A, 1T806B, 1T806V are designed for use in pulse devices, converters and current and voltage stabilizers. The main technical characteristics of the transistor 1T806A: • Structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fh21b - The limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: at least 10 MHz; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 2 V; • Ik max - Maximum allowable DC collector current: 20 A; • h21e - Voltage feedback coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 10...100; • Rke us - Saturation resistance between collector and emitter: no more than 0.04 Ohm. | 22 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 30Вт | 20pcs | 40В | 20А | 10МГц | 100 | — | — | — | |||||||||
Transistor 2T808A (=KT808A)
#13843
|
26020 | СНГ | — |
150 грн.
|
|
— | The main technical characteristics of the transistor 2T808A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 50W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7.2 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 120 (250 imp.) V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 10 A; • IКеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (120V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 50; • Sk - Collector junction capacitance: no more than 500 pF. | 30 | — | КТЮ-3-20 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 50Вт | 10 pieces. | 120В | 10А | — | 50 | — | — | — | |||||||||
Chip TL081CP
#13851
|
26028 | TEXAS INSTRUMENTS | — |
8 грн.
|
|
— | 0.5 | DIP8 | — | — | DIP | — | — | — | Amplifiers | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | ||||||||||
Transistor KT805BM
#13925
|
26104 | СНГ | — |
12 грн.
|
|
— | Transistors silicon epitaxial structures npn switching. Designed for use in line-scan output stages, ignition devices for internal combustion engines and other switching devices. | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 30Вт | 100 pieces. | 60В | 5А | 20МГц | 15 | — | — | — | |||||||||
Diode KD411GM
#13926
|
26105 | СНГ | — |
3 грн.
|
|
— | Silicon diode, diffusion, high-speed. | 2 | — | — | — | DIP | КД-8 | 500V | 2A | — | Fast | — | — | — | — | 200pcs | — | — | — | — | — | — | single | |||||||||
| 26106 | TUNGSRAM | — |
200 грн.
|
|
— | 19 | — | — | — | DIP | — | — | — | — | — | — | — | — | 8Вт | 2 pcs. | — | — | — | — | — | — | — | |||||||||||
Diode KD203D
#13931
|
26110 | СНГ | — |
40 грн.
|
|
— | Diodes KD203D silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the diode 2D203D: • Uopp max - Maximum direct reverse voltage: 700 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 1500 μA at Uobr 1000 V. | 13 | — | — | — | Screw | — | 700V | 10A | — | Rectifier | — | — | — | — | 25pcs | — | — | — | — | — | — | single | |||||||||
Transistor KP302BM Au
#13932
|
26111 | СНГ | — |
24 грн.
|
|
— | KP302BM silicon planar field transistor with a gate based on pn junction and n-type channel. Designed for use in broadband amplifiers in the frequency range up to 150 MHz, as well as in switching and switching devices. | 0.4 | — | КТ-1 | Field | DIP | — | — | — | — | — | MOS p-channel | 20В | 40мА | 300мВт | 100 pieces. | — | — | 150МГц | — | — | — | — | |||||||||
Diode D245A
#13934
|
26113 | СНГ | — |
35 грн.
|
|
— | Diodes D245A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the D245A diode: • Uopp max - Maximum direct reverse voltage: 300 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 300 V. | 13 | — | — | — | Screw | — | 300V | 10A | — | Rectifier | — | — | — | — | 40pcs | — | — | — | — | — | — | single | |||||||||
Diode D246B
#13935
|
26114 | СНГ | — |
30 грн.
|
|
— | Diodes D246B silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the diode D246B: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.5 V at Inp 5 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 400 V. | 13 | — | — | — | Screw | — | 400V | 5A | — | Rectifier | — | — | — | — | 40pcs | — | — | — | — | — | — | single | |||||||||
Diode D246A
#13936
|
26115 | СНГ | — |
40 грн.
|
|
— | Diodes D246A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the D246A diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 400 V. | 13 | — | — | — | DIP | — | 400V | 10A | — | Rectifier | — | — | — | — | 40pcs | — | — | — | — | — | — | single | |||||||||
Diode D245
#13938
|
26117 | СНГ | — |
35 грн.
|
|
— | Diodes D245 silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the diode D245: • Uopp max - Maximum direct reverse voltage: 300 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.25 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 300 V. | 13 | — | — | — | Screw | — | 300V | 10A | — | Rectifier | — | — | — | — | 40pcs | — | — | — | — | — | — | single | |||||||||
Zener diode KS191A
#13939
|
26118 | СНГ | — |
3 грн.
|
|
— | Zener diodes KS191A silicon, alloy, two-anode, low power. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3...15 mA and to limit the voltage on both sides. The main technical parameters of the KS191A zener diode: • Rated stabilization voltage: 9.1 V at Ist 5 mA; • Temperature coefficient of stabilization voltage: ±0.06%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 18 Ohm at Ist 5 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 15 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. | 0.3 | — | — | — | DIP | — | — | — | — | — | — | — | — | 150мВт | 200pcs | — | — | — | — | 9V1 | — | — | |||||||||
Zener diode KS191F
#13941
|
26120 | СНГ | — |
40 грн.
|
|
— | Zener diodes KS191F silicon, epitaxial, low power, precision, class 0.02. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3...20 mA with high requirements for voltage stability in the temperature range of -60...+100 °C in digital measuring instruments and other precision equipment. The main technical parameters of the KS191F zener diode: • Rated stabilization voltage: 9.1 V at Ist 10 mA; • Stabilization voltage spread: 8.65... 9.55 V; • Temperature coefficient of stabilization voltage: ±0.0005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±0.02%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • Maximum allowable power dissipation on the zener diode: 0.2 W; • Working range of ambient temperature: -60... +100 °С. | 0.7 | — | — | — | DIP | — | — | — | — | — | — | — | — | 200мВт | 100 pieces. | — | — | — | — | 9V1 | kd-8 | — | |||||||||
Zener diode KS119A
#13942
|
26121 | СНГ | — |
12 грн.
|
|
— | Stabistors KS119A silicon, diffusion-alloy, low power. Designed for use in voltage stabilizers and as thermal compensating elements. The main technical parameters of the stabistor KS119A: • Rated stabilization voltage: 1.9 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.4%/°С; • Differential resistance: 15 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Maximum allowable power dissipation: 0.18 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | 180мВт | 100 pieces. | — | — | — | — | 1V9 | kd-8 | — | |||||||||
Zener diode KS168A
#13943
|
26122 | СНГ | — |
3 грн.
|
|
— | Zener diodes KS168A silicon, alloy, low power. Designed to stabilize the nominal voltage of 6.8 V in the stabilization current range of 3...45 mA. The main technical parameters of the KS168A zener diode: • Rated stabilization voltage: 6.8 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: ±0.06%/°С; • Constant forward voltage: 1 V at Ipr 50 mA; • Zener diode differential resistance: 28 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 45 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | 6V8 | kd-8 | — | |||||||||
Zener diode D818G
#13945
|
26124 | СНГ | — |
12 грн.
|
|
— | Zener diodes D818G silicon, diffusion-alloy, low power, precision. Designed to stabilize the nominal voltage of 9 V in the stabilization current range of 3...33 mA with high requirements for voltage stability in the temperature range of -60...+125 °C. The main technical parameters of the Zener diode D818G: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.006%/°С; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | 9V | kd-8 | — | |||||||||
Zener diode D814B
#13946
|
26125 | СНГ | — |
3 грн.
|
|
— | Zener diodes D814B silicon, alloy, medium power. Designed to stabilize the voltage of 8.0-9.5 V in the stabilization current range of 3...36 mA. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | 340мВт | 100 pieces. | — | — | — | — | 9V | kd-8 | — | |||||||||
Zener diode 2S530A (=KS530A)
#13947
|
26126 | СНГ | — |
10 грн.
|
|
— | Zener diodes 2S530A silicon, planar, medium power. Designed to stabilize the rated voltage of 30 V in the stabilization current range of 1...27 mA. The main technical parameters of the zener diode 2S530A: • Rated stabilization voltage: 30 V at Ist 5 mA; • Stabilization voltage spread: 28.5... 31.5 V; • Temperature coefficient of stabilization voltage: ±0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 200 Ohm at Ist 1 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 27 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | 30V | kd-8 | — |
