Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Thyristor 2U202I (=KU202I)
#13840
|
26018 | СНГ | — |
25 грн.
|
— | Silicon thyristors 2U202I planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. | 11 | — | — | — | Screw | — | 200V | 10A | — | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | ||||||||||
Transistor 2T803A (=KT803A)
#13841
|
26847 | СНГ | — |
200 грн.
|
|
— | Transistors 2T803A silicon mezaplanar structures npn universal. Designed for use in DC amplifiers, horizontal sweep generators, secondary power supplies. | 19 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 60Вт | 20pcs | 60В | 10А | 20МГц | 50 | — | — | — | |||||||||
Transistor 1T806A (=GT806A)
#13842
|
26019 | СНГ | — |
40 грн.
|
|
— | 1T806A Transistors germanium diffusion-alloy structures pnp switching. Transistors 1T806A, 1T806B, 1T806V are designed for use in pulse devices, converters and current and voltage stabilizers. The main technical characteristics of the transistor 1T806A: • Structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fh21b - The limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: at least 10 MHz; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 2 V; • Ik max - Maximum allowable DC collector current: 20 A; • h21e - Voltage feedback coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 10...100; • Rke us - Saturation resistance between collector and emitter: no more than 0.04 Ohm. | 22 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | 30Вт | 20pcs | 40В | 20А | 10МГц | 100 | — | — | — | |||||||||
Transistor 2T808A (=KT808A)
#13843
|
26020 | СНГ | — |
150 грн.
|
|
— | The main technical characteristics of the transistor 2T808A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 50W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7.2 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 120 (250 imp.) V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 10 A; • IКеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (120V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 50; • Sk - Collector junction capacitance: no more than 500 pF. | 30 | — | КТЮ-3-20 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 50Вт | 10 pieces. | 120В | 10А | — | 50 | — | — | — | |||||||||
Chip TL081CP
#13851
|
26028 | TEXAS INSTRUMENTS | — |
8 грн.
|
|
— | 0.5 | DIP8 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | ||||||||||
Thyristor KU202L
#13924
|
26103 | СНГ | — |
25 грн.
|
— | Silicon thyristors KU202L are planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. | 11 | — | — | — | Screw | — | 300V | 10A | — | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | ||||||||||
Transistor KT805BM
#13925
|
26104 | СНГ | — |
12 грн.
|
|
— | Transistors silicon epitaxial structures npn switching. Designed for use in line-scan output stages, ignition devices for internal combustion engines and other switching devices. | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 30Вт | 100 pieces. | 60В | 5А | 20МГц | 15 | — | — | — | |||||||||
Diode KD411GM
#13926
|
26105 | СНГ | — |
3 грн.
|
|
— | Silicon diode, diffusion, high-speed. | 2 | — | — | — | DIP | КД-8 | 500V | 2A | — | — | Fast | — | — | — | — | 200pcs | — | — | — | — | — | — | single | |||||||||
| 26106 | TUNGSRAM | — |
200 грн.
|
|
— | 19 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 8Вт | 2 pcs. | — | — | — | — | — | — | — | |||||||||||
Diode KD203D
#13931
|
26110 | СНГ | — |
40 грн.
|
|
— | Diodes KD203D silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the diode 2D203D: • Uopp max - Maximum direct reverse voltage: 700 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 1500 μA at Uobr 1000 V. | 13 | — | — | — | Screw | — | 700V | 10A | — | — | Rectifier | — | — | — | — | 25pcs | — | — | — | — | — | — | single | |||||||||
Transistor KP302BM Au
#13932
|
26111 | СНГ | — |
24 грн.
|
|
— | KP302BM silicon planar field transistor with a gate based on pn junction and n-type channel. Designed for use in broadband amplifiers in the frequency range up to 150 MHz, as well as in switching and switching devices. | 0.4 | — | КТ-1 | Field | DIP | — | — | — | — | — | — | MOS p-channel | 20В | 40мА | 300мВт | 100 pieces. | — | — | 150МГц | — | — | — | — | |||||||||
Diode D245A
#13934
|
26113 | СНГ | — |
35 грн.
|
|
— | Diodes D245A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the D245A diode: • Uopp max - Maximum direct reverse voltage: 300 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 300 V. | 13 | — | — | — | Screw | — | 300V | 10A | — | — | Rectifier | — | — | — | — | 40pcs | — | — | — | — | — | — | single | |||||||||
Diode D246B
#13935
|
26114 | СНГ | — |
30 грн.
|
|
— | Diodes D246B silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the diode D246B: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.5 V at Inp 5 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 400 V. | 13 | — | — | — | Screw | — | 400V | 5A | — | — | Rectifier | — | — | — | — | 40pcs | — | — | — | — | — | — | single | |||||||||
Diode D246A
#13936
|
26115 | СНГ | — |
40 грн.
|
|
— | Diodes D246A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the D246A diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 400 V. | 13 | — | — | — | DIP | — | 400V | 10A | — | — | Rectifier | — | — | — | — | 40pcs | — | — | — | — | — | — | single | |||||||||
Diode D245
#13938
|
26117 | СНГ | — |
35 грн.
|
|
— | Diodes D245 silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the diode D245: • Uopp max - Maximum direct reverse voltage: 300 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.25 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 300 V. | 13 | — | — | — | Screw | — | 300V | 10A | — | — | Rectifier | — | — | — | — | 40pcs | — | — | — | — | — | — | single | |||||||||
Zener diode KS191A
#13939
|
26118 | СНГ | — |
3 грн.
|
|
— | Zener diodes KS191A silicon, alloy, two-anode, low power. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3...15 mA and to limit the voltage on both sides. The main technical parameters of the KS191A zener diode: • Rated stabilization voltage: 9.1 V at Ist 5 mA; • Temperature coefficient of stabilization voltage: ±0.06%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 18 Ohm at Ist 5 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 15 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. | 0.3 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 150мВт | 200pcs | — | — | — | — | 9V1 | — | — | |||||||||
Zener diode KS191F
#13941
|
26120 | СНГ | — |
40 грн.
|
|
— | Zener diodes KS191F silicon, epitaxial, low power, precision, class 0.02. Designed to stabilize the nominal voltage of 9.1 V in the stabilization current range of 3...20 mA with high requirements for voltage stability in the temperature range of -60...+100 °C in digital measuring instruments and other precision equipment. The main technical parameters of the KS191F zener diode: • Rated stabilization voltage: 9.1 V at Ist 10 mA; • Stabilization voltage spread: 8.65... 9.55 V; • Temperature coefficient of stabilization voltage: ±0.0005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±0.02%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • Maximum allowable power dissipation on the zener diode: 0.2 W; • Working range of ambient temperature: -60... +100 °С. | 0.7 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 200мВт | 100 pieces. | — | — | — | — | 9V1 | kd-8 | — | |||||||||
Zener diode KS119A
#13942
|
26121 | СНГ | — |
12 грн.
|
|
— | Stabistors KS119A silicon, diffusion-alloy, low power. Designed for use in voltage stabilizers and as thermal compensating elements. The main technical parameters of the stabistor KS119A: • Rated stabilization voltage: 1.9 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.4%/°С; • Differential resistance: 15 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Maximum allowable power dissipation: 0.18 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 180мВт | 100 pieces. | — | — | — | — | 1V9 | kd-8 | — | |||||||||
Zener diode KS168A
#13943
|
26122 | СНГ | — |
3 грн.
|
|
— | Zener diodes KS168A silicon, alloy, low power. Designed to stabilize the nominal voltage of 6.8 V in the stabilization current range of 3...45 mA. The main technical parameters of the KS168A zener diode: • Rated stabilization voltage: 6.8 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: ±0.06%/°С; • Constant forward voltage: 1 V at Ipr 50 mA; • Zener diode differential resistance: 28 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 45 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | 6V8 | kd-8 | — | |||||||||
Zener diode D818G
#13945
|
26124 | СНГ | — |
12 грн.
|
|
— | Zener diodes D818G silicon, diffusion-alloy, low power, precision. Designed to stabilize the nominal voltage of 9 V in the stabilization current range of 3...33 mA with high requirements for voltage stability in the temperature range of -60...+125 °C. The main technical parameters of the Zener diode D818G: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.006%/°С; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | 9V | kd-8 | — | |||||||||
Zener diode D814B
#13946
|
26125 | СНГ | — |
3 грн.
|
|
— | Zener diodes D814B silicon, alloy, medium power. Designed to stabilize the voltage of 8.0-9.5 V in the stabilization current range of 3...36 mA. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 340мВт | 100 pieces. | — | — | — | — | 9V | kd-8 | — | |||||||||
Zener diode 2S530A (=KS530A)
#13947
|
26126 | СНГ | — |
10 грн.
|
|
— | Zener diodes 2S530A silicon, planar, medium power. Designed to stabilize the rated voltage of 30 V in the stabilization current range of 1...27 mA. The main technical parameters of the zener diode 2S530A: • Rated stabilization voltage: 30 V at Ist 5 mA; • Stabilization voltage spread: 28.5... 31.5 V; • Temperature coefficient of stabilization voltage: ±0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 200 Ohm at Ist 1 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 27 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | 30V | kd-8 | — | |||||||||
Transistor KT837K
#13948
|
26127 | СНГ | — |
12 грн.
|
|
— | Transistors KT837K silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT837K: • Transistor structure: pnp; • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 1 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 45 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 50... 150; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 2 | — | TO220 | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | — | 200pcs | 40В | 7,5A | 1МГц | 150 | — | — | — | |||||||||
Diode D7Zh
#13950
|
26130 | СНГ | — |
9 грн.
|
|
— | Diodes germanium D7Zh, alloy. The main technical characteristics of the D7Zh diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 2.4 kHz; • Unp - DC forward voltage: no more than 0.5 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V. | 1.6 | — | — | — | DIP | КД-8 | 300V | 300mA | — | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||||
Diode bridge KTS407A
#13951
|
26131 | СНГ | — |
30 грн.
|
— | KTS407A A block of silicon, mesadiffusion diodes connected in a bridge circuit. Available in a plastic case with flexible leads. The main technical characteristics of the diode KTS407A: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 500 mA; • Inp and max - Maximum pulse forward current: 3 A; • fd - Operating frequency of the diode: 20 kHz; • Iobr - Constant reverse current: no more than 5 μA at Uobr 400 V; • tvoc - Reverse recovery time: 5 µs. | 0.5 | — | — | — | DIP | — | 400V | 500mA | 3A | — | Diode bridge | — | — | — | — | 500pcs | — | — | — | — | — | — | — | ||||||||||
Varicap KV105B
#13953
|
26133 | СНГ | — |
10 грн.
|
— | 1.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||||
Diode D2V
#13957
|
26137 | СНГ | — |
3 грн.
|
|
— | Diodes D2V germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2V: • Uopp max - Maximum direct reverse voltage: 30 V; • Inp max - Maximum forward current: 25 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 9 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 30 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | DIP | КД-4 | 30V | 25mA | — | — | Detector | — | — | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||||
Diode D2G
#13958
|
26138 | СНГ | — |
3 грн.
|
|
— | Diodes D2G germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2G: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 2 mA; • Iobr - Constant reverse current: no more than 250 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | DIP | КД-4 | 50V | 16mA | — | — | Detector | — | — | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||||
Diode D2D
#13959
|
26139 | СНГ | — |
3 грн.
|
|
— | Diodes D2D germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2D: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 4.5 mA; • Iobr - Constant reverse current: no more than 250 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | DIP | КД-4 | 50V | 16mA | — | — | Detector | — | — | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||||
Diode D2E
#13960
|
26140 | СНГ | — |
3 грн.
|
|
— | Diodes D2E germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the D2E diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 4.5 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 100 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | DIP | КД-4 | 100V | 16mA | — | — | Detector | — | — | — | — | 100 pieces. | — | — | — | — | — | — | single |
