Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type |
|---|
Chip TNY267GN
#13659
|
25823 | Power Integrations | — |
31 грн.
|
|
— | 0.5 | SMD-8B | — | — | SMD | — | — | — | Nutrition | — | — | 500pcs | — | — | — | — | — | — | ||||||||
Chip TNY268GN
#13660
|
25824 | Power Integrations | — |
29 грн.
|
|
— | 0.5 | SMD-8B | — | — | SMD | — | — | — | Nutrition | — | — | 500pcs | — | — | — | — | — | — | ||||||||
Chip TNY276GN
#13663
|
25830 | Power Integrations | — |
25 грн.
|
|
— | 0.5 | SMD-8B | — | — | SMD | — | — | — | Nutrition | — | — | 50pcs | — | — | — | — | — | — | ||||||||
Chip TNY263PN
#13668
|
— | Power Integrations | — |
25 грн.
|
|
— | 0.5 | DIP-8B | — | — | DIP | — | — | — | Nutrition | — | — | 50pcs | — | — | — | — | — | — | ||||||||
Chip TNY265PN
#13670
|
25821 | Power Integrations | — |
20 грн.
|
|
— | 0.5 | DIP-8B | — | — | DIP | — | — | — | Nutrition | — | — | 50pcs | — | — | — | — | — | — | ||||||||
Chip TNY274PN
#13671
|
25827 | Power Integrations | — |
23 грн.
|
|
— | 0.5 | DIP-8B | — | — | SMD | — | — | — | Nutrition | — | — | 50pcs | — | — | — | — | — | — | ||||||||
| 25808 | TEXAS INSTRUMENTS | — |
33 грн.
|
— | 0.3 | TO-92 | — | — | DIP | — | — | — | Sensors | — | — | 500pcs | — | — | — | — | — | — | ||||||||||
Transistor GT402D
#13679
|
25838 | СНГ | — |
42 грн.
|
|
— | Transistor GT402D germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. | 3.5 | — | — | Bipolar | DIP | — | — | — | — | PNP | 600мВт | 50pcs | 25В | 500мА | 1МГц | 80 | — | — | |||||||
Transistor GT402I
#13680
|
25839 | СНГ | — |
45 грн.
|
|
— | Transistor GT402I germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. | 3.5 | — | — | Bipolar | DIP | — | — | — | — | PNP | 600мВт | 50pcs | 40В | 500мА | 1МГц | 150 | — | — | |||||||
Thyristor KU201A
#13684
|
25843 | СНГ | — |
10 грн.
|
— | • Maximum DC reverse voltage: 25 V; • Maximum DC voltage in closed state: 25 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. | 11 | — | — | — | Screw | 25V | — | 30A | — | — | — | 40pcs | — | — | — | — | — | — | ||||||||
Thyristor KU202A
#13686
|
25845 | СНГ | — |
20 грн.
|
— | Continuous maximum reverse voltage 25 V Continuous maximum off-state voltage 25 V Constant pulse current in the open state - 30 A Repetitive on-state surge current 10 A On-state voltage Non-triggering DC control voltage >=0.2 V DC off state Constant reverse current Latching direct current control Constant trigger voltage control Critical off-state slew rate 5 V/µs Turn-on time Shutdown time | 11 | — | — | — | Screw | 25V | 10A | 30A | — | — | — | 40pcs | — | — | — | — | — | — | ||||||||
Thyristor KU202V
#13687
|
25846 | СНГ | — |
20 грн.
|
— | Silicon thyristors KU202V, planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. | 11 | — | — | — | Screw | 50V | 10A | — | — | — | — | 40pcs | — | — | — | — | — | — | ||||||||
Thyristor KU202K
#13688
|
25847 | СНГ | — |
20 грн.
|
— | Silicon thyristors KU202K are planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. | 11 | — | — | — | Screw | 300V | 10A | — | — | — | — | 40pcs | — | — | — | — | — | — | ||||||||
Thyristor KU102V
#13694
|
25854 | СНГ | — |
15 грн.
|
— | Silicon thyristors KU102V, diffusion, pnpn structures, triode, lockable. Designed for use as low power switching elements. The main technical parameters of the thyristor KU102V: • Maximum DC reverse voltage: 5 V; • Maximum DC voltage in closed state: 150 V; • Maximum repetitive pulse current in the open state: 5 A; • Repetitive pulse current in the open state: 0.05 A; • Voltage in the open state: no more than 2.5 V; • Non-opening constant control voltage: not less than 0.2 V; • Direct current in the closed state: not less than 0.15 mA; • Blocking impulse control current: 20 mA; • Constant unlocking control voltage: 12 V; • Voltage slew rate in closed state: 200 V/µs; • Turn-on time: 5 µs; • Turn-off time: 20 µs • Working range of ambient temperature: -60... +125 °С. | 1.2 | — | — | — | DIP | 150V | — | 5A | — | — | — | 100 pieces. | — | — | — | — | — | — | ||||||||
Thyristor KU101A
#13695
|
25855 | СНГ | — |
8 грн.
|
— | Silicon thyristors KU101A, diffusion-alloy, p-type, triode, non-lockable. Designed for use as switching elements. The main technical parameters of the thyristor KU101A: • Maximum DC reverse voltage: 10 V; • Maximum DC voltage in closed state: 50 V; • Maximum repetitive pulse current in the open state: 1 A; • Average pulse current in the open state: 0.075 A; • Voltage in the open state: no more than 2.5 V; • Direct current in the closed state: not less than 0.15 mA; • Constant reverse current: no more than 0.15 mA; • Unlocking direct control current: no more than 12 mA; • Constant unlocking control voltage: 1.5...8 V; • Voltage slew rate in closed state: 100 V/µs; • Turn-on time: 2 ms; • Turn-off time: 35 µs. | 1.8 | — | — | — | DIP | 50V | — | 1A | — | — | — | 100 pieces. | — | — | — | — | — | — | ||||||||
Thyristor KU101E
#13697
|
25857 | СНГ | — |
12 грн.
|
— | Silicon thyristors KU101E, diffusion-alloy, p-type, triode, non-lockable. Designed for use as switching elements. The main technical parameters of the thyristor KU101E: • Maximum DC reverse voltage: 150 V; • Maximum DC voltage in closed state: 150 V; • Maximum repetitive pulse current in the open state: 1 A; • Average pulse current in the open state: 0.075 A; • Voltage in the open state: no more than 2.5 V; • Direct current in the closed state: not less than 0.15 mA; • Constant reverse current: no more than 0.15 mA; • Unlocking direct control current: no more than 12 mA; • Constant unlocking control voltage: 1.5...8 V; • Voltage slew rate in closed state: 100 V/µs; • Turn-on time: 2 ms; • Turn-off time: 35 µs. | 1.8 | — | — | — | DIP | 150V | — | 1A | — | — | — | 100 pieces. | — | — | — | — | — | — | ||||||||
Transistor MP10B
#13699
|
25859 | СНГ | — |
8 грн.
|
|
— | Transistor MP10 germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. The main technical characteristics of the MP10B transistor: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 50 μA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 25...50; • Sk - Collector junction capacitance: no more than 60 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 5000 ps; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | NPN | 150мВт | 100 pieces. | 30В | 20мА | 1МГц | 50 | — | — | |||||||
Transistor MP42
#13701
|
25862 | СНГ | — |
5 грн.
|
|
— | PNP structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 15 Max. e.g. k-e at a given current to and a given resist. in the circuit b-e. (Uker max), V 15 The maximum allowable current to (Ik max, A) 0.2 Static current transfer coefficient h21e min 20…35 Limiting frequency of the current transfer coefficient fgr, MHz 1 Maximum dissipated power k (Pk, W) 0.2 | 1.6 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | PNP | 200мВт | 100 pieces. | 15В | 200мА | 1МГц | 35 | — | — | |||||||
Zener diode KS650A1
#13708
|
25871 | СНГ | — |
8 грн.
|
|
— | Zener diodes KS650A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 150 V in the stabilization current range of 7...38 mA. The main technical parameters of the KS650A zener diode: • Rated stabilization voltage: 150 V at Ist 25 mA; • Stabilization voltage spread: 135... 165 V; • Temperature coefficient of stabilization voltage: ±0.2%/°С; • Zener diode differential resistance: 270 Ohm at Ist 25 mA; • Minimum allowable stabilization current: 7 mA; • Maximum allowable stabilization current: 38 mA; • Maximum allowable power dissipation on the zener diode: 5 watts. | 1.5 | — | — | — | Screw | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 150V | ks620 | |||||||
Dinistor KN102I
#13709
|
25872 | — | — |
25 грн.
|
— | Designed for use in pulse devices as switching elements. The main technical parameters of the thyristor KN102I: • Maximum DC reverse voltage: 10 V; • Maximum DC voltage in closed state: 50 V; • Maximum repetitive pulse current in the open state: 10 A; • Average pulse current in the open state: 0.2 A; • Voltage in the open state: no more than 1.5 V; • Non-opening constant control voltage: 15 V; • Direct current in the closed state: no more than 0.08 mA; • Constant reverse current: no more than 0.5 mA; • Constant unlocking control voltage: 150 V; • Turn-off time: no more than 40 microseconds. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Chip KA7812 (=7812CV)
#13713
|
25877 | FAIRCHILD SEMICONDUCTOR | — |
7 грн.
|
|
— | 2.5 | TO-220 | — | — | DIP | — | — | — | Nutrition | — | — | 50pcs | — | — | — | — | — | — | ||||||||
Chip KR504NT4B
#13721
|
25889 | СНГ | — |
6 грн.
|
|
— | KR504NT4B microcircuits are a high-current matched pair of field-effect transistors with a pn junction and a p-channel, designed for use in the input stages of DC amplifiers, in differential and operational amplifiers and switches. | 0.5 | DIP8 | — | — | DIP | — | — | — | Amplifiers | — | — | 200pcs | — | — | — | — | — | — | |||||||
Chip KR559IP4 (=8T23, N8T23)
#13724
|
25891 | СНГ | — |
6 грн.
|
|
— | The microcircuit is designed to exchange information between devices and system units and to transfer data to peripheral devices, display and indication devices, for interfaces made using bipolar technology (TTLS). The 559IP4 microcircuit consists of two trunk transmitters. | 1.2 | DIP16 | — | — | DIP | — | — | — | Interfaces | — | — | 90pcs | — | — | — | — | — | — | |||||||
Chip KR1531LI1 (=74F08)
#13727
|
25894 | СНГ | — |
6 грн.
|
|
— | Four logical elements 2I. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | 100 pieces. | — | — | — | — | — | — | |||||||
Chip K531IE16P
#13728
|
25895 | СНГ | — |
6 грн.
|
|
— | Synchronous four-charge ten-day reversible counter. | 1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | 90pcs | — | — | — | — | — | — | |||||||
Chip KR1531LA3 (=74F00)
#13730
|
25897 | СНГ | — |
6 грн.
|
|
— | 4 logical elements 2I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | 100 pieces. | — | — | — | — | — | — | |||||||
Chip K161IR2
#13731
|
25898 | СНГ | — |
6 грн.
|
|
— | 3-bit parallel register. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | 100 pieces. | — | — | — | — | — | — | |||||||
Chip K161LR1
#13732
|
25899 | СНГ | — |
6 грн.
|
|
— | Three elements 2AND-2OR-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | 100 pieces. | — | — | — | — | — | — | |||||||
Transistor KT848A
#13752
|
25920 | СНГ | — |
90 грн.
|
|
— | Transistors KT848A silicon mezaplanar structures npn amplifying. Are intended for application in electronic circuits of ignition of the automobile radio-electronic equipment. The main technical characteristics of the transistor KT848A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 35 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 3 MHz; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 15 A; • Iкer - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (400V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 20; • Rke us - Saturation resistance between collector and emitter: no more than 0.2 Ohm. | 15 | — | TO3 | Bipolar | DIP | — | — | — | — | NPN | 35Вт | 40pcs | 400В | 15А | 3МГц | 20 | — | — | |||||||
Chip KR140UD20A
#13768
|
25935 | СНГ | — |
14 грн.
|
|
— | Dual (two-channel) medium-precision operational amplifier with internal frequency correction and input short-circuit protection. | 1 | DIP14 | — | — | DIP | — | — | — | Amplifiers | — | — | 100 pieces. | — | — | — | — | — | — |
