Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
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Diode KD105B (type 2)
#9889
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21674 | СНГ | 6804 шт |
1 грн.
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Silicon diodes, diffusion. Are issued in the plastic case with flexible conclusions. | 0.3 | — | — | — | DIP | — | 400V | 300mA | — | — | Rectifier | — | — | 2000pcs | — | — | — | — | — | — | — | single | ||||||||||
Zener diode KS413B
#9797
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21368 | СНГ | 6576 шт |
1 грн.
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Zener diode KS413B silicon diffusion-planar, designed to stabilize and limit the voltage. Climatic version - B, placement category - 3 Case type: KD-2 The mass of devices is not more than 0.15 g. Specifications: aA0.336.773 TU. The main technical parameters of the KS413B zener diode: • Rated stabilization voltage: 4.3 V; • Stabilization voltage spread: 4.1... 4.5 V; • Temperature coefficient of stabilization voltage: +0.01, -0.05%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 18 Ohm at Ist 20 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 70 mA; • Maximum allowable power dissipation on the zener diode: 0.34 W; • Ambient temperature operating range: -60... +125 °С | 0.2 | — | — | — | DIP | — | — | — | — | — | — | — | 340мВт | 200pcs | — | — | — | — | 4V3 | DO-35 | — | — | ||||||||||
| 21207 | СНГ | 6342 шт |
10 грн.
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Dual (two-channel) medium-precision operational amplifier with internal frequency correction and input short-circuit protection. | 1 | DIP14 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||||
Chip K555LA2
#675
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21694 | СНГ | 6273 шт |
5 грн.
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Logic element 8I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Diode 2D202R (=KD202R)
#10770
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22840 | СНГ | 6249 шт |
10 грн.
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Diodes 2D202R silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. Are issued in the glass-to-metal case with rigid conclusions. The type of the diode and the connection diagram of the electrodes with the leads are given on the case. Diode weight no more than 5.2 g, with accessories no more than 7 g. Hull type: KDYu-11-2. Specifications: UZh3.362.035 TU. The main technical characteristics of the diode 2D202R: • Uobr and max - Maximum impulse reverse voltage: 600 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 600 V | 5.2 | — | — | — | Screw | КД-11 | 600V | 5A | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||||
| 20140 | ST MICROELECTRONICS | 5717 шт |
1 грн.
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75V*0.2A | 0.11 | — | — | — | DIP | DO-35 | 75V | 200mA | — | — | Pulse | — | — | 1000pcs | — | — | — | — | — | — | — | single | |||||||||||
Varicap D901D
#15992
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28226 | СНГ | 5411 шт |
5 грн.
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Main technical parameters of the D901D varicap: • Sd min - Minimum total capacitance: 34 pF at Uobr 4 V; • Sd max - Maximum total capacitance: 44 pF at Uobr 4 V; • Qv - Q-factor of the varicap: 25; • Iobr - Constant reverse current: 1 μA at Uobr 80 V; • Uo6p - Constant reverse voltage: 80 V; • Taq - Working range of ambient temperature: -60 ... +125 °С. | 1 | — | — | — | DIP | КД-8 | — | — | — | — | Varicap | — | — | 1000pcs | — | — | — | — | — | — | — | — | |||||||||||
Zener diode BZV85-C5V6
#9766
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21308 | PHILIPS | 5137 шт |
2 грн.
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0.3 | — | — | — | DIP | — | — | — | — | — | — | — | 1.3Вт | 5000pcs | — | — | — | — | 5V6 | DO-41 | — | — | |||||||||||
Zener diode D817V
#14013
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26192 | СНГ | 4988 шт |
6 грн.
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Medium power silicon zener diode, 82V. The main technical parameters of the Zener diode D817V: • Stabilization voltage spread: 74... 90 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 45 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 60 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 4.2 | — | — | — | Screw | — | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 82V | ks620 | — | — | ||||||||||
| 29016 | TAIWAN SEMICONDUCTOR | 4962 шт |
4 грн.
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0.5 | — | — | — | SMD | DO-214AC, SMA | — | — | — | — | Protective | — | 400Вт | 7500шт. | — | — | — | — | — | — | 39V | — | ||||||||||||
Microwave diode 3A121A
#9804
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21385 | СНГ | 4865 шт |
46 грн.
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The main technical parameters of the microwave diode 3A121A: • Operating frequency: no more than 40 GHz; • Conversion loss: no more than 9 dB; • Rectified current: 0.3...1.4 mA; • Rated noise figure: no more than 9 dB; • Voltage standing wave ratio: no more than 3; • Output impedance: 200...600 Ohm; • DC forward voltage: 0.55...1.2 V; • Pulsed incident power: 100 mW; • Ambient temperature: -60...+85°С; • Minimum operating time: 50,000 hours; | 0.0015 | — | — | — | SMD | КД-124 | — | — | — | — | Microwave | — | — | 80pcs | — | — | — | — | — | — | — | single | ||||||||||
Chip KR1561KT3 (=CD4066)
#13299
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25393 | СНГ | 4544 шт |
4 грн.
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Four bi-directional switches | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Chip K555TV6
#7366
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21306 | СНГ | 4511 шт |
4 грн.
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Two JK flip-flops with reset. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Diode 2D202V (=KD202V)
#12224
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24603 | СНГ | 4494 шт |
9 грн.
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The main technical characteristics of the diode 2D202V: • Uobr and max - Maximum impulse reverse voltage: 100 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 100 V. | 5 | — | — | — | Screw | КДЮ-11 | 100V | 5A | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||||
Chip KR1582IP1
#9870
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21649 | СНГ | 4380 шт |
58 грн.
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The microcircuit is a circuit (LSI LU) for processing control signals and interaction of automatic telephone exchanges (ATS) and is designed for logical and temporal processing of control and interaction signals transmitted between exchanges via trunk lines, packed with IKM-30 equipment. The LSI is universal for various types of matching devices (CV) included in the IKM-30 equipment: outgoing MI and incoming CB, as well as for various modes of connecting the CS to the connecting lines (local, long-distance, decade-step, coordinate). The choice of operating modes is carried out by applying the appropriate levels to the inputs for changing the mode "MO" and the inputs for selecting the SI /CB "CS" mode. In addition to the logical processing of SIV and the formation of output control signals CO, TF, EBL, LSI performs the function of holding the conversational path in case of failures and accidents in the DSP equipment, and also implements the functions of time selection of signals and correction of the duration of dialing pulses. All types of temporal signal processing are carried out digitally, which significantly increases the stability of the parameters. | 3 | DIP28 | — | — | DIP | — | — | — | — | Telephony | — | — | — | 15pcs | — | — | — | — | — | — | — | — | ||||||||||
Varicap KV122AT2
#15532
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27771 | СНГ | 4188 шт |
3 грн.
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Varicap KV122AT2. Picked up in sets of 3 | 0.06 | — | — | — | DIP | — | — | — | — | — | Varicap | — | — | 300pcs | — | — | — | — | — | — | — | — | |||||||||||
Diode assembly KDS523VR
#15848
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28081 | СНГ | 4122 шт |
4 грн.
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Diode assembly consisting of four silicon, planar epitaxial switching diodes, with separate leads. | 1.1 | — | — | — | DIP | — | 50V | 20mA | — | — | Pulse | — | — | 50pcs | — | — | — | — | — | — | — | assembly | ||||||||||
| 27025 | СНГ | 3895 шт |
15 грн.
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Principle of operation: a ferromagnet with metal plates is put on the reed switch, when the ambient temperature rises, the plates heat up, the ferromagnet heats up. When heated, its magnetic properties are gradually lost. At a certain temperature, a complete loss of magnetic properties is obtained, the contacts of the reed switch open. Specifications: The response temperature is 70°C. The resistance of the sensor in standby mode is no more than 0.5 Ohm. The resistance of the sensor in the "Fire" mode is at least 200 kOhm. | 2.1 | — | — | — | DIP | — | — | — | — | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | — | ||||||||||||
Zener diode KS139A stack.
#11424
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23541 | СНГ | 3705 шт |
2 грн.
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Silicon zener diode, diffusion-alloy, low power. | 0.2 | — | — | — | DIP | — | — | — | — | — | — | — | 300мВт | 500pcs | — | — | — | — | 3V9 | kd-4 | — | — | ||||||||||
Zener diode D815A1
#9875
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21654 | СНГ | 3658 шт |
6 грн.
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— | 4.2 | — | — | — | Screw | — | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 6V2 | ks620 | — | — | ||||||||||
Chip KM155LA4
#755
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21232 | СНГ | 3644 шт |
5 грн.
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3 logical elements 3I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Diode assembly KDS523BM
#9820
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21411 | СНГ | 3607 шт |
2 грн.
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Diode assembly, each consisting of two silicon planar epitaxial switching diodes with separate terminals. Are issued in the plastic case with flexible conclusions. | 0.25 | — | — | — | SMD | — | 50V | 20mA | 200mA | — | Pulse | — | — | 100 pieces. | — | — | — | — | — | — | — | assembly | ||||||||||
Transistor KT315A
#6837
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22799 | СНГ | 3459 шт |
2 грн.
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Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. | 0.25 | — | КТ-13 | Bipolar | DIP | — | — | — | — | — | — | NPN | 150мВт | 800 pcs. | 25В | 100мА | 250МГц | 120 | — | — | — | — | ||||||||||
| 28743 | СНГ | 3452 шт |
6 грн.
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Transistors 1T313B OS germanium diffusion-alloy structures pnp universal. Designed for use in high and ultra high frequency amplifiers and switching devices. | 1.2 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 100мВт | 100 pieces. | 15В | 30мА | 450МГц | 75 | — | — | — | — | |||||||||||
Zener diode KS175A2
#11422
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23539 | СНГ | 3432 шт |
1.50 грн.
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— | 0.2 | — | — | — | DIP | — | — | — | — | — | — | — | 150мВт | 200pcs | — | — | — | — | 7V5 | kd2 | — | — | ||||||||||
Transistor MP21V
#3479
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23014 | СНГ | 3425 шт |
10 грн.
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Transistor MP21V germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 40В | 100мА | 1,5МГц | 100 | — | — | — | — | ||||||||||
Microwave diode 2A523A-4
#13748
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25916 | СНГ | 3402 шт |
142 грн.
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The working element of the diode is a pin-type semiconductor structure. Designed for use in switching devices of the decimeter and centimeter wavelength ranges as part of hybrid integrated circuits that provide sealing and protection of devices from moisture, salt fog, mold fungi, hoarfrost and dew, low and high pressure. They are produced in a frameless design with hard leads on a crystal holder with a protective coating. Marked: 2A523A-4 - one black dot at the positive electrode. The main technical parameters of the microwave diode 2A523A-4: • Critical diode switching frequency: not less than 200 GHz; • Continuous power dissipation: 20W; • Direct forward current: no more than 300 mA; • Constant reverse current: no more than 4mA; • Forward voltage across the diode: no more than 1.2 V; • Constant reverse voltage: no more than 200 V; • Accumulated diode charge: no more than 220 nC; • Direct loss resistance: no more than 0.5 Ohm; • Total diode capacitance: no more than 1.5 pF; • Ambient temperature: -60...+125 °С; • Minimum operating time: 25000 hours. | 0.12 | — | — | — | SMD | — | — | — | — | — | Microwave | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||||
Radio lamp 2D1S
#11635
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23865 | СНГ | 3398 шт |
25 грн.
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Measuring diode with indirectly heated oxide cathode. Designed to detect microwave oscillations in special purpose equipment. | 5 | — | — | — | DIP | — | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | ||||||||||
Diode BAT46
#9815
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21398 | ST MICROELECTRONICS | 3128 шт |
1.50 грн.
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0.3 | — | — | — | DIP | DO-35 | 100V | 150mA | 750mA | — | Schottky | — | — | 4000pcs | — | — | — | — | — | — | — | single | |||||||||||
| 29200 | ROHM SEMICONDUCTOR | 3000 шт |
4.50 грн.
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0.1 | — | SOT-346 | Bipolar | SMD | — | — | — | — | — | — | PNP+R | 200мВт | 3000pcs | 50В | 100мА | 250МГц | — | — | — | — | — |
