Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
|---|
| 29344 | LITTELFUSE | 3000 шт |
4 грн.
|
|
0.043 | — | — | — | SMD | SOD123 | — | — | — | — | Protective | — | — | — | 200Вт | 3000pcs | — | — | — | — | — | — | 7.5V | — | ||||||||||
Diode bridge KTS405B
#14125
|
26306 | СНГ | 2992 шт |
7 грн.
|
The main technical characteristics of the KTs405B diode: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 500 V. | 5.2 | — | — | — | DIP | — | 500V | 1A | — | — | Diode bridge | — | — | — | — | 500pcs | — | — | — | — | — | — | — | — | |||||||||
Diode D220
#8890
|
26713 | СНГ | 2991 шт |
2 грн.
|
|
Silicon diode, alloyed, pulsed. The main technical characteristics of the diode D220: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 50 mA; • Inp and max - Maximum pulse forward current: 0.5 A; • Sd - Total capacitance: 15 pF at Uobr 5 V; • Unp - DC forward voltage: no more than 1.5 V at Inp 50 mA; • Iobr - Constant reverse current: no more than 1 μA at Uobr 50 V. | 0.3 | — | — | — | DIP | D104 | 50V | 50mA | — | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||
Transistor MP25A
#10815
|
23008 | СНГ | 2973 шт |
6 грн.
|
|
Transistor MP25A germanium alloy pnp universal low-frequency. Designed to amplify and switch low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | 200мВт | 100 pieces. | 40В | 150мА | — | 50 | — | — | — | — | ||||||||
| 29024 | INFINEON TECHNOLOGIES | 2944 шт |
140 грн.
|
|
0.12 | VQFN-32 | — | — | SMD | — | — | — | — | ИС аутентификации | — | — | — | — | — | 5000pcs | — | — | — | — | — | — | — | — | ||||||||||
Zener diode KS531V1
#14486
|
26698 | СНГ | 2850 шт |
3 грн.
|
|
Zener diodes KS531V1 silicon, diffusion-alloy, medium power. Designed for use as 31.0 V reference voltage sources. The main technical parameters of the KS531V1 zener diode: • Rated stabilization voltage: 31 V at Ist 5 mA; • Temperature coefficient of stabilization voltage: ±0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1%; • Zener diode differential resistance: 90 Ohm at Ist 5 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 15 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -50... +100 °С. | 0.3 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 500мВт | 1000pcs | — | — | — | — | 31V | TO-92-2 | — | — | ||||||||
Diode 1N4006
#16670
|
28909 | VISHAY | 2840 шт |
2 грн.
|
|
1000V*1A | 0.34 | — | — | — | DIP | DO-41 | 800V | 1A | — | — | Rectifier | — | — | — | — | 3000pcs | — | — | — | — | — | — | — | single | ||||||||
Diode KD209A orange.
#14035
|
26214 | СНГ | 2805 шт |
1 грн.
|
|
Diodes KD209A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1 kHz. | 0.3 | — | — | — | DIP | КД-5А | 400V | 700mA | — | — | Rectifier | — | — | — | — | 500pcs | — | — | — | — | — | — | — | single | ||||||||
Diode BAT54 (L4)
#12749
|
25103 | NXP | 2712 шт |
1 грн.
|
|
0.1 | — | — | — | SMD | SOT-23 | 30V | 200mA | — | — | Schottky | — | — | — | — | 3000pcs | — | — | — | — | — | — | — | single | |||||||||
Diode D223
#3409
|
22785 | СНГ | 2641 шт |
2 грн.
|
|
Max. permissible reverse voltage, V: 50 Maximum direct forward current, mA: 50 | 0.3 | — | — | — | DIP | D104 | 50V | 50mA | — | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||
Zener diode D815E
#11452
|
23582 | СНГ | 2366 шт |
6 грн.
|
|
Zener diodes D815E silicon, diffusion-alloy, average power 15V. The main technical parameters of the Zener diode D815E: • Stabilization voltage spread: 13.3... 16.4 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.1%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 2.5 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 550 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 4.2 | — | — | — | Screw | — | — | — | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 15V | ks620 | — | — | ||||||||
| 20141 | NXP | 2297 шт |
0.60 грн.
|
|
70V 0.2A | 0.1 | — | — | — | SMD | SOT-23 | 70V | 215mA | — | — | Pulse | — | — | — | — | 3000pcs | — | — | — | — | — | — | — | double common cathode | |||||||||
Chip KR1008VZh7
#9803
|
21383 | СНГ | 2208 шт |
6.50 грн.
|
|
Electronic dialer for telephones with pulse dialing and remembering the last number. | 2.5 | DIP22 | — | — | DIP | — | — | — | — | Telephony | — | — | — | — | — | 64pcs | — | — | — | — | — | — | — | — | ||||||||
Zener diode BZV55C3V9
#11450
|
23580 | PHILIPS | 2188 шт |
1 грн.
|
|
Zener diode BZV55C3V9 SOD-80 3V9 0.5W | 0.2 | — | — | — | SMD | — | — | — | — | — | — | — | — | — | 500мВт | 2500pcs | — | — | — | — | 3V9 | SOD-80 | — | — | ||||||||
Zener diode KS650A
#11185
|
23308 | СНГ | 2147 шт |
8 грн.
|
|
Zener diodes KS650A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 150 V in the stabilization current range of 2.5...33 mA. The main technical parameters of the KS650A zener diode: • Rated stabilization voltage: 150 V at Ist 25 mA; • Stabilization voltage spread: 135... 165 V; • Temperature coefficient of stabilization voltage: ±0.2%/°С; • Zener diode differential resistance: 270 Ohm at Ist 25 mA; • The minimum allowable stabilization current: 2.5 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable power dissipation on the zener diode: 5 watts. | 1.5 | — | — | — | Screw | — | — | — | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 150V | ks620 | — | — | ||||||||
Zener diode BZT52C15
#17010
|
29261 | DIODES INCORPORATED | 2131 шт |
2 грн.
|
|
0.12 | — | — | — | SMD | — | — | — | — | — | — | — | — | — | 500мВт | 3000pcs | — | — | — | — | 15V | SOD-123 | — | — | |||||||||
ТН-0,2-2 E10/13 neon lamp
#11744
|
23973 | СНГ | 2119 шт |
8 грн.
|
|
The neon lamp TN-0.2-2 is used as indicator, signal elements in various electrical and radio engineering devices. | 2.5 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Zener diode KS211Zh
#10377
|
22384 | СНГ | 2116 шт |
1.50 грн.
|
|
Silicon zener diode, planar, low power. | 0.1 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 125мВт | 400pcs | — | — | — | — | 11V | kd2 | — | — | ||||||||
Diode BAT54C (WW1)
#12750
|
25104 | NXP | 2116 шт |
1 грн.
|
|
0.1 | — | — | — | SMD | SOT-23 | 30V | 200mA | — | — | Schottky | — | — | — | — | 3000pcs | — | — | — | — | — | — | — | double common cathode | |||||||||
| 20142 | NXP | 2069 шт |
0.80 грн.
|
|
2 Diodes 70V 215mA | 0.1 | — | — | — | SMD | SOT-23 | 75V | 215mA | — | — | Pulse | — | — | — | — | 3000pcs | — | — | — | — | — | — | — | 2 diodes in series | |||||||||
Diode KD521V
#3473
|
23549 | СНГ | 2069 шт |
1 грн.
|
|
Type of diode pulse Maximum constant reverse voltage, V 50 Maximum direct (rectified for a half-cycle) current, A 0.05 Hole mounting method Maximum recovery time, µs 0.004 Maximum reverse current, µA 1 Maximum forward voltage, V 1 at Ipr., A 0.05 Total capacity, Sd.pF 4 Operating temperature, С -60...125 Housing kd 3 | 0.2 | — | — | — | DIP | КД-2 | 50V | 50mA | 500mA | — | Pulse | — | — | — | — | 500pcs | — | — | — | — | — | — | — | single | ||||||||
Chip K555LA4
#680
|
21372 | СНГ | 2048 шт |
4 грн.
|
|
Three logical elements 3I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Chip K561KT3
#3946
|
26500 | СНГ | 2040 шт |
7 грн.
|
|
Four bidirectional switches. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Transistor KT801A
#9884
|
21664 | СНГ | 1989 шт |
15 грн.
|
|
Transistors KT801A silicon alloy-diffusion structures npn switching. Designed for use in vertical and line scanning, secondary power supplies. Are issued in the glass-to-metal case with flexible conclusions. The device type is indicated on the case. The mass of the transistor is not more than 4 g. Hull type: KTYu-3-9. | 3.5 | — | КТЮ-3-9 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 5Вт | 200pcs | 80В | 2А | 10МГц | 50 | — | — | — | — | ||||||||
Transistor KP303I Ni
#14463
|
26675 | СНГ | 1980 шт |
11 грн.
|
|
KP303I silicon epitaxial-planar field transistors with a gate based on a pn junction and an n-type channel. The main technical characteristics of the KP303I transistor: • Transistor structure: with pn-junction and n-channel; • Rsi max - Power dissipation drain-source: 200 mW; • Uzi ots - Transistor cutoff voltage - voltage between gate and source: 0.5... 2 V; • Usi max - Maximum drain-source voltage: 25 V; • Uzs max - Maximum gate-drain voltage: 30 V; • Uzi max - Maximum gate-source voltage: 30 V; • Ic - Drain current (constant): 20 mA; • Ic start - Initial drain current: 1.5...5 mA; • S - Slope of characteristic: 2... 6 mA/V; • C11i - Transistor input capacitance - capacitance between gate and source: no more than 6 pF; • C12i - Feedback capacitance in a circuit with a common source in case of a short circuit at the AC input: no more than 2 pF. | 0.4 | — | КТ-1 | Field | DIP | — | — | — | — | — | — | MOS n-channel | 25В | 20мА | 200мВт | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Transistor MP14A
#10829
|
23025 | СНГ | 1909 шт |
7 грн.
|
|
Transistor MP14A germanium alloyed pnp universal low-frequency low-power. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 30В | 20мА | 1МГц | 40 | — | — | — | — | ||||||||
Zener diode D816V
#11969
|
24258 | СНГ | 1909 шт |
6 грн.
|
|
Medium power silicon zener diode, 33V The main technical parameters of the Zener diode D816V: • Stabilization voltage spread: 29.5... 36 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 10 Ohm; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 150 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 33V | ks620 | — | — | ||||||||
Varicap KV109G
#14279
|
26478 | СНГ | 1907 шт |
2.50 грн.
|
Varicaps KV109G silicon, epitaxial-planar, tuning. Designed for use in frequency tuning circuits of resonant amplifiers. The main technical parameters of the KV109G varicap: • Sd min - Minimum total capacitance: 8 pF at Uobr 3 V; • Sd max - Maximum total capacitance: 17 pF at Uobr 3 V; • Qв - Quality factor of the varicap: 160; • Iobr - Constant reverse current: 0.5 μA at Uobr 25 V; • Uo6p - DC reverse voltage: 25 V; • Pnp - Forward power dissipation: 5 mW; • Tacr - Working range of ambient temperature: -40... +85 °С. | 0.06 | — | — | — | DIP | — | — | — | — | — | Varicap | — | — | — | — | 3000pcs | — | — | — | — | — | — | — | — | |||||||||
Diode MURS360T3G (=U3J)
#11486
|
23621 | ON SEMICONDUCTOR | 1903 шт |
7 грн.
|
|
0.6 | — | — | — | SMD | DO-214AB | 600V | 3.0A | — | — | Fast | — | — | — | — | 2500pcs | — | — | — | — | — | — | — | single | |||||||||
Diode KD208A (green drop)
#14415
|
26624 | СНГ | 1866 шт |
1 грн.
|
|
Diodes KD208A silicon, diffusion, rectifier. Designed to convert alternating voltage with a frequency of up to 1.0 kHz. The main technical characteristics of the KD208A diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 1.5 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 100 µA at Uobr 100 V. | 0.3 | — | — | — | DIP | — | 100V | 1.5A | — | — | Rectifier | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | single |
