Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
|---|
| 20277 | VISHAY | 1837 шт |
3 грн.
|
|
0.1 | — | SOT23 | Field | SMD | — | — | — | — | — | MOS p-channel | 20В | 2.3А | 1.25Вт | 3000pcs | — | — | — | — | — | — | — | — | ||||||||||||
| 25509 | СНГ | 1811 шт |
10 грн.
|
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Voltage stabilizer +15V 1.5A | 2.8 | TO-220 | — | — | DIP | — | — | — | Nutrition | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||||
Zener diode BZV55C5V1
#11451
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23581 | PHILIPS | 1808 шт |
1 грн.
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Zener diode BZV55C5V1 SOD-80 5V1 0.5W | 0.2 | — | — | — | SMD | — | — | — | — | — | — | — | — | 500мВт | 2500pcs | — | — | — | — | 5V1 | SOD-80 | — | — | ||||||||||
Diode KD202A
#15974
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28208 | СНГ | 1797 шт |
7 грн.
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Diodes KD202V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. Produced in a glass-to-metal housing with hard leads. The type of diode and the connection diagram of the electrodes with the leads are given on the case. Main technical characteristics of the KD202V diode: • uobr and max - Maximum pulse reverse voltage: 50 V; • • inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1 .2 kHz; • unp - DC forward voltage: no more than 0.9 V at inp 5 A; | 5.2 | — | — | — | Screw | КД-11 | 50V | 5A | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||||
Zener diode D814G
#13704
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25867 | СНГ | 1781 шт |
3 грн.
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Zener diodes D814G silicon, alloy, medium power. Designed to stabilize the voltage of 10.0-12.0 V in the stabilization current range of 3...29 mA. Are issued in the glass-to-metal case with flexible conclusions. The type of zener diode is given on the housing. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | 340мВт | 200pcs | — | — | — | — | 11V | — | — | — | ||||||||||
| 23875 | СНГ | 1748 шт |
22 грн.
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|
Transistor assemblies consisting of two silicon epitaxial-planar structures of pnp amplifying transistors on the same chip with separate leads. Designed for use in broadband balanced, differential and operational amplifiers and other stages of hermetically sealed equipment, which require the identity of the parameters of two transistors. | 4.1 | — | — | Bipolar | SMD | — | — | — | — | — | PNPx2 | — | — | 20мВт | 100 pieces. | 10В | 20мА | 500МГц | 180 | — | — | — | — | |||||||||||
Transistor S9014 (J6)
#8706
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20430 | BL Galaxy Electrical | 1721 шт |
1 грн.
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0.1 | — | SOT23 | Bipolar | SMD | — | — | — | — | — | NPN | — | — | 200мВт | 3000pcs | 45В | 100мА | 150МГц | 1000 | — | — | — | — | |||||||||||
Zener diode KS139A
#13705
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25868 | СНГ | 1692 шт |
3 грн.
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Zener diode KS139A - alloy, silicon, low power. The main purpose is voltage stabilization from 3.51 to 4.29 V. It has a stabilization current range from 3 to 70 mA. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | 3V9 | kd-8 | — | — | ||||||||||
Zener diode KS210Zh
#13739
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25907 | СНГ | 1670 шт |
1 грн.
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Zener diodes KS210Zh silicon, planar, low power. Designed to stabilize the nominal voltage of 10 V in the stabilization current range of 0.5 ... 13 mA in measuring equipment, in amplifiers for level matching, in automation systems for supplying low-power sensors, as well as to stabilize the pulse voltage and limit pulse signals. Available in metal-glass cases with flexible leads. The main technical parameters of the KS210Zh zener diode: • Rated stabilization voltage: 10 V at Ist 4 mA; • Stabilization voltage spread: 9... 11 V; • Temperature coefficient of stabilization voltage: 0.09%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 40 Ohm at Ist 4 mA; • Minimum allowable stabilization current: 0.5 mA; • Maximum allowable stabilization current: 13 mA; • Maximum allowable power dissipation on the zener diode: 0.125 W; • Ambient temperature operating range: -60... +125 °С | 0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | 125мВт | 1000pcs | — | — | — | — | 10V | КД-3. | — | — | ||||||||||
Diode 1N5404
#16090
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28330 | MIC | 1580 шт |
3 грн.
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1 | — | — | — | DIP | DO-201AD | 400V | 3.0A | — | Rectifier | — | — | — | — | 500pcs | — | — | — | — | — | — | — | — | |||||||||||
Diode LL4148 (=DL4148)
#13714
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25878 | SEMTECH ELECTRONICS | 1568 шт |
1 грн.
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0.12 | — | — | — | SMD | SOD80 | 75V | 200mA | — | Pulse | — | — | — | — | 2500pcs | — | — | — | — | — | — | — | single | |||||||||||
| 28324 | VISHAY | 1556 шт |
1 грн.
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75V*0.2A | 0.11 | — | — | — | DIP | DO-35 | 75V | 200mA | — | Pulse | — | — | — | — | 5000pcs | — | — | — | — | — | — | — | single | |||||||||||
Transistor P213A
#9905
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21705 | СНГ | 1500 шт |
15 грн.
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Transistors P213A germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. Are issued in the glass-to-metal case with rigid conclusions. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 10Вт | 50pcs | 30В | 5А | — | 20 | — | — | — | — | ||||||||||
| 28982 | ON SEMICONDUCTOR | 1498 шт |
48 грн.
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0.2 | — | PMPAK5x6,SO8FL, DFNW5 5x6 | Field | SMD | — | — | — | — | — | MOS n-channel | 40В | 180А | 106Вт | 1500pcs. | — | — | — | — | — | — | — | — | ||||||||||||
Chip K561TM3A
#4053
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22392 | СНГ | 1491 шт |
6 грн.
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Four D-flip-flops (type "latch", with direct and inverted outputs and static recording control). The IC has two strobe inputs: a sync C input and a polarity control input. | 1.2 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Chip 228NK1
#11782
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24012 | СНГ | 1486 шт |
35 грн.
|
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The 228NK1 microcircuit is a diode-resistor matrix. | 2.1 | — | — | — | DIP | — | — | — | Telephony | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | ||||||||||
Transistor P416A
#10834
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23031 | СНГ | 1485 шт |
8 грн.
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Transistor P416A germanium alloy pnp universal. Designed for use in amplifying and generator cascades in the range from long to short and ultrashort waves, as well as in pulse cascades of radio electronic devices. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 100мВт | 100 pieces. | 12В | 25мА | 60МГц | 125 | — | — | — | — | ||||||||||
Zener diode KS168A stack.
#11417
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23534 | СНГ | 1464 шт |
2 грн.
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Zener diodes KS168A silicon, alloy, low power. Designed to stabilize the nominal voltage of 6.8 V in the stabilization current range of 3...45 mA. | 0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | 300мВт | 1000pcs | — | — | — | — | 6V8 | kd-4 | — | — | ||||||||||
Transistor KT339AM
#11372
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23482 | СНГ | 1462 шт |
3 грн.
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Transistors silicon epitaxial-planar structures npn universal. Designed for use in high frequency amplifiers. | 0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 250мВт | 500pcs | 25В | 25мА | 300МГц | 25 | — | — | — | — | ||||||||||
ТН-0,2-2 B9S/14 neon lamp
#11743
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23972 | СНГ | 1449 шт |
8 грн.
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The neon lamp TN-0.2-2 is used as indicator, signal elements in various electrical and radio engineering devices. | 2.5 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Zener diode BZX55C 3V3
#4187
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20208 | Rectron Semiconductor | 1444 шт |
1 грн.
|
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Zener diode 3.3V 0.5W (BZX55C 3V3) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 3V3 | DO-35 | — | — | ||||||||||
Diode BY252
#16087
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28326 | DIOTEC SEMICONDUCTOR | 1439 шт |
4 грн.
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0.6 | — | — | — | DIP | DO-201AD | 400V | 3.0A | — | Fast | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | single | |||||||||||
Transistor BC856B (3Bt)
#2393
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22266 | NXP | 1437 шт |
0.60 грн.
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0.05 | — | SOT23 | Bipolar | SMD | — | — | — | — | — | PNP | — | — | 250мВт | 3000pcs | 80В | 100мА | — | 290 | — | — | — | — | |||||||||||
Chip KM155LA6
#4067
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21257 | СНГ | 1431 шт |
4 грн.
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Integrated circuit of the TTL series. KM155LA6 microcircuits are 2 logical elements 4I-NOT with a large output branching factor. Contains 34 integral elements. Housing type 201.14-1, weight no more than 1 g. Maximum permissible operating modes KM155LA6: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Chip K555LA1
#770
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22048 | СНГ | 1430 шт |
6 грн.
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Two logical elements 4I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Diode KD243D
#14492
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26707 | СНГ | 1426 шт |
2 грн.
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Diodes KD243D silicon, diffusion, rectifier. Are intended for transformation of alternating voltage with a frequency up to 70 kHz. The main technical characteristics of the KD243D diode: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 1 A; • Inp and max - Maximum pulse forward current: 6 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.1 V at Inp 1 A; • Iobr - Constant reverse current: no more than 10 μA at Uobr 600 V. | 0.4 | — | — | — | DIP | КД-4 | 600V | 1A | — | Rectifier | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | single | ||||||||||
Chip K555IE7
#674
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22041 | СНГ | 1422 шт |
6 грн.
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Reversible four-digit binary counter. | 1.2 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 200pcs | — | — | — | — | — | — | — | — | ||||||||||
| 21319 | СНГ | 1305 шт |
6 грн.
|
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The microcircuit is designed to exchange information between devices and system units and to transfer data to peripheral devices, display and indication devices, for interfaces made using bipolar technology (TTLS). The KR559IP1 microcircuit consists of four trunk transmitters | 1.1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | |||||||||||
Diode US1M
#10464
|
22487 | TOSHIBA | 1304 шт |
1.50 грн.
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0.3 | — | — | — | SMD | SMA | 1000V | 1A | — | Fast | — | — | — | — | 2000pcs | — | — | — | — | — | — | — | single | |||||||||||
| 28323 | LITTELFUSE | 1304 шт |
4 грн.
|
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0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | — | — | 600Вт | 4000pcs | — | — | — | — | — | — | 600V | — |
