Active radio components

Results: 8086

	MPN	Article	Brand	In stock	Price	Discounts	Quantity	Description	Weight g.	Type of shell	Transistor case type	Transistor type	Mounting type	Type of shell	Urev. max, V	Ipr. max.	Appointment	Diode type	Structure	Power	Factory packaging	Collector-emitter voltage	Collector current	Frequency	Current gain	Stabilization voltage	Zener diode housing type	Breakdown voltage	Diode design

Diode bridge KTS402E

#12158

24451

СНГ

1298 шт

12 грн.

Block of silicon, diffusion diodes. The main technical characteristics of the diode KTS402E: • Uobr and max - Maximum impulse reverse voltage: 100 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 100 V.

5.7

—

DIP

—

100V

—

Diode bridge

—

100 pieces.

—

Transistor P416

#10833

23030

СНГ

1293 шт

10 грн.

10+	9,50 грн.
50+	9 грн.
100+	8 грн.

Transistor P416 germanium alloy pnp universal. Designed for use in amplifying and generator cascades in the range from long to short and ultrashort waves, as well as in pulse cascades of radio electronic devices.

1.8

—

КТЮ-3-3

Bipolar

DIP

—

PNP

100мВт

100 pieces.

12В

25мА

40МГц

—

Chip KM133LA3

#9865

21644

СНГ

1292 шт

12 грн.

10+	11,40 грн.
50+	10,80 грн.
100+	9,60 грн.

Integrated semiconductor microcircuit (transistor-transistor logic). Represents four logical elements &quot;2I-NOT&quot;

0.4

SO14

—

SMD

—

Logics

—

50pcs

—

Diode BY251

#16086

28325

DIOTEC SEMICONDUCTOR

1289 шт

3 грн.

100+	2,70 грн.
200+	2,40 грн.
500+	2,10 грн.

0.6

—

DIP

DO-201AD

200V

3.0A

—

Fast

—

1000pcs

—

single

Zener diode BZX55C 2V7

#4185

20206

Rectron Semiconductor

1285 шт

1 грн.

50+	0,90 грн.
100+	0,80 грн.
250+	0,75 грн.

Zener diode 2.7V 0.5W (BZX55C 2V7)

0.12

—

DIP

—

500мВт

500pcs

—

2V7

DO-35

—

Zener diode D817G

#11964

24253

СНГ

1282 шт

6 грн.

50+	5,40 грн.
100+	4,80 грн.
250+	4,50 грн.

Medium power silicon zener diode, 100V The main technical parameters of the Zener diode D817G: • Stabilization voltage spread: 90... 110 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 50 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 50 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Working range of ambient temperature: -60... +120 °С.

3.5

—

Screw

—

5Вт

100 pieces.

—

100V

ks620

—

Zener diode KS182A

#13940

26119

СНГ

1261 шт

3 грн.

50+	2,70 грн.
100+	2,40 грн.
250+	2,25 грн.

Zener diodes KS182A silicon, alloy, two-anode, low power. Designed to stabilize the nominal voltage of 8.2 V in the stabilization current range of 3...17 mA and to limit the voltage on both sides. The main technical parameters of the KS182A zener diode: • Rated stabilization voltage: 8.2 V at Ist 5 mA; • Temperature coefficient of stabilization voltage: ±0.05%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 14 Ohm at Ist 5 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 17 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С.

0.3

—

DIP

—

150мВт

200pcs

—

8V2

—

Chip KR514ID1

#842

21234

СНГ

1248 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

Decoder for a seven-segment semiconductor digital indicator with disconnected segment anodes.

DIP14

—

DIP

—

Logics

—

100 pieces.

—

Chip HEF4052BP (=KR1561KP1)

#3615

21309

PHILIPS

1238 шт

12 грн.

10+	11,40 грн.
50+	10,80 грн.
100+	9,60 грн.

CMOS two quad multiplexer/demultiplexer

DIP16

—

DIP

—

Logics

—

25pcs

—

1.5KE30A (=1N6282A), Protective Diode, 1500W, 30V

#4234

20174

VISHAY

1222 шт

5 грн.

10+	4,75 грн.
30+	4,50 грн.
50+	4 грн.

DO-201

1.1

—

DIP

DO-201AD

—

Protective

—

1.5кВт

200pcs

—

30V

—

Transistor BFR93AWH6327 (R2s)

#6484

29104

INFINEON TECHNOLOGIES

1222 шт

9 грн.

10+	8,55 грн.
50+	8,10 грн.
100+	7,20 грн.
500+	6,30 грн.

0.1

—

SOT323

Bipolar

SMD

—

NPN

300мВт

3000pcs

12В

35мА

2ГГц

—

Chip KR1533ID4

#840

21214

СНГ

1209 шт

12 грн.

10+	11,40 грн.
50+	10,80 грн.
100+	9,60 грн.

Double decoder.

1.1

DIP16

—

DIP

—

Logics

—

90pcs

—

Diode BY255

#1019

28327

DIOTEC SEMICONDUCTOR

1206 шт

5 грн.

100+	4,50 грн.
200+	4 грн.
500+	3,50 грн.

0.6

—

DIP

DO-201AD

1300V

3.0A

—

Fast

—

1000pcs

—

single

Transistor MP13B

#10820

23016

СНГ

1206 шт

9 грн.

10+	8,55 грн.
50+	8,10 грн.
100+	7,20 грн.

Transistor MP13B germanium alloyed pnp universal low-frequency low-power. Designed to amplify small low-frequency signals, amplify, switch, pulse shaping. The main technical characteristics of the MP13B transistor: • Transistor structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 200 µA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 45...100; • Sk - Collector junction capacitance: no more than 60 pF; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz.

1.8

—

КТЮ-3-3

Bipolar

DIP

—

PNP

150мВт

100 pieces.

15В

20мА

1МГц

—

Chip KM155LA3

#4065

21331

СНГ

1201 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

Integrated circuit of the TTL series. Chips KM155LA3 are 4 logic elements 2I-NOT. Contain 56 integral elements. Housing type 201.14-8, weight no more than 2.2 g. Maximum permissible operating modes KM155LA3: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... &gt; 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С

DIP14

—

DIP

—

Logics

—

100 pieces.

—

Transistor MP101

#13535

25663

СНГ

1201 шт

5 грн.

10+	4,75 грн.
50+	4,50 грн.
100+	4 грн.

Transistors MP101 are silicon alloyed npn amplifying low-frequency transistors with non-standardized MP101, MP101B and standardized MP101A noise factors at a frequency of 1 kHz.

1.8

—

КТЮ-3-3

Bipolar

DIP

—

NPN

150мВт

100 pieces.

20В

20мА

0,5МГц

—

Transistor KT321B

#13703

25866

СНГ

1185 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

Transistors KT321B silicon, epitaxial-planar structures pnp pulse. Designed for use in pulse amplifiers and switching devices.

1.5

—

КТЮ-3-6

Bipolar

DIP

—

PNP

210мВт

100 pieces.

50В

200мА

60МГц

120

—

SM24CANA-02HTG protection diode (M24C)

#16028

28265

LITTELFUSE

1177 шт

4 грн.

10+	3,80 грн.
30+	3,60 грн.
50+	3,20 грн.

0.05

—

SMD

SOT-23

—

Protective

—

200Вт

—

24V

—

Zener diode BZX55C 8V2

#4198

20212

Rectron Semiconductor

1164 шт

1 грн.

50+	0,90 грн.
100+	0,80 грн.
250+	0,75 грн.

Zener diode 8.2V 0.5W (BZX55C 8V2)

0.12

—

DIP

—

500мВт

500pcs

—

8V2

DO-35

—

Zener diode BZX55C 10V

#4200

20214

Rectron Semiconductor

1128 шт

1 грн.

50+	0,90 грн.
100+	0,80 грн.
250+	0,75 грн.

Zener diode 10V 0.5W (BZX55C, 10V)

0.12

—

DIP

—

500мВт

500pcs

—

10V

DO-35

—

Diode UF4002 (1.0A/100V 50ns)

#16048

28287

FAIRCHILD SEMICONDUCTOR

1120 шт

2 грн.

100+	1,80 грн.
200+	1,60 грн.
500+	1,40 грн.

0.2

—

DIP

DO-41

100V

—

Fast

—

5000pcs

—

single

Transistor MMBTA06LT1G (1GM)

#6500

29247

ON SEMICONDUCTOR

1104 шт

1 грн.

10+	0,95 грн.
50+	0,90 грн.
100+	0,80 грн.
500+	0,70 грн.

0.1

—

SOT23

Bipolar

SMD

—

NPN

300мВт

3000pcs

80В

500мА

—

100

—

Chip UPD78F1807AK8A2-3B4-E3-G (=D78F1807A)

#16875

29122

RENESAS

1096 шт

130 грн.

10+	123,50 грн.
50+	117 грн.
100+	104 грн.

0.17

32-HWQFN (5x5)

—

SMD

—

Microcontrollers

—

2500pcs

—

Chip ARF3.438.010 met.

#15835

28068

СНГ

1087 шт

80 грн.

10+	76 грн.
50+	72 грн.
100+	64 грн.

Appointment - differential system for the equipment of digital system IKM-30-4.

DIP28

—

DIP

—

Telephony

—

6pcs

—

Transistor KT660A

#10314

22263

INTEGRAL

1072 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

0.3

—

TO92

Bipolar

DIP

—

NPN

500мВт

1000pcs

45В

800мА

—

220

—

Radio lamp 6N3P

#9874

21653

—

1063 шт

30 грн.

10+	27 грн.
20+	25,50 грн.
50+	24 грн.

Double miniature triode. Designed to amplify voltage and generate low frequency oscillations.

—

Zener diode MMSZ5V1T1G (U46)

#16026

28263

ON SEMICONDUCTOR

1055 шт

2 грн.

50+	1,80 грн.
100+	1,60 грн.
250+	1,50 грн.

Zener diode MMSZ5V1T1G (U46).

0.12

—

SMD

—

500мВт

3000pcs

—

5V1

SOD-123

—

Transistor MP14

#10830

23026

СНГ

1044 шт

7 грн.

10+	6,65 грн.
50+	6,30 грн.
100+	5,60 грн.

Transistor MP14 germanium alloyed pnp universal low-frequency low-power.

1.8

—

КТЮ-3-3

Bipolar

DIP

—

PNP

150мВт

100 pieces.

15В

20мА

1МГц

—

Chip K172TP1

#873

21955

СНГ

1033 шт

8 грн.

10+	7,60 грн.
50+	7,20 грн.
100+	6,40 грн.

Two stage trigger with input logic.

DIP14

—

DIP

—

Logics

—

100 pieces.

—

Diode KD209B (drop)

#15524

27763

СНГ

1024 шт

1 грн.

50+	0,90 грн.
200+	0,80 грн.
500+	0,70 грн.

The main technical characteristics of the KD209B diode: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 600 V.

0.4

—

DIP

—

600V

500mA

—

Rectifier

—

1000pcs

—

single