Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Zener diode BZX55C 16V
#4218
|
20204 | Rectron Semiconductor | 1013 шт |
1 грн.
|
|
Zener diode 16V 0.5W (BZX55C 16V0) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 16V | DO-35 | — | ||||||||
Transistor MP101B
#13702
|
25863 | СНГ | 1005 шт |
6 грн.
|
|
Transistors MP101B are silicon alloyed npn amplifying low-frequency transistors with non-standardized MP101, MP101B and standardized MP101A noise figures at a frequency of 1 kHz. Designed to amplify and switch low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 150мВт | 100 pieces. | 20В | 20мА | 0,5МГц | 45 | — | — | — | ||||||||
Zener diode KS168V
#15468
|
27707 | СНГ | 1001 шт |
4 грн.
|
|
The main technical parameters of the KS168V zener diode: • Rated stabilization voltage: 6.8 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: ±0.05%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 28 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. | 0.4 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 150мВт | 1000pcs | — | — | — | — | 6V8 | kd25 | — | ||||||||
Diode HER306G
#17232
|
29485 | MCC | 1000 шт |
4 грн.
|
|
1 | — | — | — | DIP | DO-27 | 600V | 3.0A | — | — | Fast | — | — | — | — | 1200pcs. | — | — | — | — | — | — | single | |||||||||
Transistor KT829G
#13386
|
25510 | СНГ | 995 шт |
12 грн.
|
|
Transistors KT829G silicon mezaplanar structures npn compound amplifying. Designed for use in low-frequency amplifiers, switching devices. | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 60Вт | 200pcs | 45В | 8А | 4МГц | 750 | — | — | — | ||||||||
Diode HER108 LGE
#17231
|
29484 | LGE | 990 шт |
1.50 грн.
|
|
0.3 | — | — | — | DIP | DO-41 | 1000V | 1A | — | — | Fast | — | — | — | — | 1000pcs | — | — | — | — | — | — | single | |||||||||
| 20135 | MIC | 987 шт |
2 грн.
|
|
0.2 | — | — | — | DIP | DO-41 | 1000V | 1A | — | — | Fast | — | — | — | — | 5000pcs | — | — | — | — | — | — | single | ||||||||||
Zener diode BZX55C 11V
#4201
|
20205 | Rectron Semiconductor | 975 шт |
1 грн.
|
|
Zener diode 11V 0.5W (BZX55C 11V) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 11V | DO-35 | — | ||||||||
Transistor BSS138 (SS)
#2481
|
22865 | ON SEMICONDUCTOR | 965 шт |
2 грн.
|
|
0.1 | — | SOT23 | Field | SMD | — | — | — | — | — | — | MOS n-channel | 50В | 200мА | 225мВт | 3000pcs | — | — | — | — | — | — | — | |||||||||
Generator lamp GS-13
#9924
|
21715 | СНГ | 964 шт |
110 грн.
|
|
Generator triode GS-13 for generating, amplifying and multiplying high-frequency oscillations in the centimeter and decimeter wave bands. Design - titanium-ceramic. | 11 | — | — | — | Clamp | — | — | — | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | ||||||||
| 29248 | DIOTEC SEMICONDUCTOR | 952 шт |
22 грн.
|
|
0.25 | — | PowerDI3333-8(SWP) | Field | SMD | — | — | — | — | — | — | MOS n-channel | 60В | 41А | 1.17 Вт | 1000pcs | — | — | — | — | — | — | — | ||||||||||
| 22750 | ST MICROELECTRONICS | 930 шт |
1.50 грн.
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0.1 | — | — | — | DIP | DO-35 | 32V | 100mA | — | — | Dinistor | — | — | — | — | 2000pcs | — | — | — | — | — | — | — | |||||||||||
Zener diode D816D
#11970
|
24259 | СНГ | 930 шт |
6 грн.
|
|
Medium power silicon zener diode, 47V The main technical parameters of the Zener diode D816D: • Stabilization voltage spread: 42.5... 51.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 15 Ohm; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 110 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 4.2 | — | — | — | Screw | — | — | — | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 47V | ks620 | — | ||||||||
Zener diode KS407A
#14482
|
26694 | СНГ | 921 шт |
2 грн.
|
|
Zener diodes KS407A silicon, planar, medium power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 1...100 mA. The main technical parameters of the KS407A zener diode: • Rated stabilization voltage: 3.3 V at Ist 20 mA; • Stabilization voltage spread: 3.1... 3.5 V; • Zener diode differential resistance: 28 Ohm at Ist 20 mA; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -40... +85 °С. | 0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 500мВт | 400pcs | — | — | — | — | 3V3 | kd2 | — | ||||||||
Diode 1N4148WS
#9702
|
21041 | DIOTEC SEMICONDUCTOR | 918 шт |
1 грн.
|
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0.05 | — | — | — | SMD | SOD-323 | 100V | 300mA | — | — | Pulse | — | — | — | — | 3000pcs | — | — | — | — | — | — | single | |||||||||
| 25140 | СНГ | 917 шт |
55 грн.
|
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Appointment - differential system for the equipment of digital system IKM-30-4. | 2 | DIP28 | — | — | DIP | — | — | — | — | Telephony | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | |||||||||
Chip K561LE6A
#775
|
21399 | СНГ | 903 шт |
4 грн.
|
|
Two logical elements 4OR-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Diode 2D213A (=KD213A)
#12227
|
24606 | СНГ | 903 шт |
25 грн.
|
|
The main technical characteristics of the diode 2D213A: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 200 µA at Uobr 200 V; • tvoc arr - Reverse recovery time: 0.3 µs; • Sd - Total capacitance: 550 pF at Uobr 100 V. | 3.5 | — | — | — | DIP | КД-23 | 200V | 10A | — | — | Rectifier | — | — | — | — | 50pcs | — | — | — | — | — | — | single | ||||||||
Transistor MP115
#13700
|
25860 | СНГ | 887 шт |
5 грн.
|
|
Silicon bipolar alloyed pnp transistors MP115 types in glass-to-metal housing are designed to work in pulse circuits, voltage stabilizers, DC amplifiers and other household appliances. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | 60мВт | 100 pieces. | 30В | 200мА | 0,1МГц | 45 | — | — | — | ||||||||
ATA5350-7MQW microcircuit
#16780
|
29025 | MICROHCHIP | 885 шт |
370 грн.
|
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The ATA5350 is a low-power ultra-wideband (UWB) transceiver with an integrated security layer for secure range limitation, localization, and point-to-point data transfer. The ATA5350 digital transmit circuitry provides maximum flexibility in generating UWB pulsed signals. The transmitter is capable of: • Generation of precise pulse widths in the range from less than 1 ns to greater than 10 ns with controlled envelope shape • Generate carrier frequency from 6.2 GHz to 7.8 GHz • Ensure compliance with ETSI and FCC regulations with programmable transmitted peak output power up to 9 dBm typical The ATA5350 Front-end (FE) receiver provides excellent sensitivity, ensuring an excellent link budget for RF communications. The digital baseband signal processing block provides highly stable sub-nanosecond time-of-flight (ToF) measurements. The ATA5350 includes a MAC layer for secure distance measurement and data transfer for proximity-based access control. The layer can be configured to provide different degrees of security. | 0.25 | FCBGA-33 | — | — | SMD | — | — | — | — | RF Transceiver | — | — | — | — | — | 2000pcs | — | — | — | — | — | — | — | ||||||||
Transistor KT315I
#6842
|
23552 | СНГ | 883 шт |
2 грн.
|
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Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. | 0.25 | — | КТ-13 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 100мВт | 800 pcs. | 60В | 50мА | 250МГц | 30 | — | — | — | ||||||||
Chip KR580VA86
#697
|
21384 | СНГ | 873 шт |
6 грн.
|
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Bidirectional 8-bit non-inverting tri-state bus driver. The IC serves as a buffer device in the circuits of microprocessor systems of the KR560, KM580 series and communicates the microprocessor with peripheral information input-output devices. The presence of a state with a high output impedance allows you to load a group of such microcircuits with one load. Possesses the increased loading capacity. | 2.5 | DIP20 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 70pcs | — | — | — | — | — | — | — | ||||||||
Zener diode BZX55C 6V2
#4194
|
20210 | Rectron Semiconductor | 870 шт |
1 грн.
|
|
Zener diode 6.2V 0.5W (BZX55C 6V2) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 6V2 | DO-35 | — | ||||||||
Zener diode ZMM5V1
#16994
|
29244 | ST MICROELECTRONICS | 864 шт |
1 грн.
|
|
Zener diode ZMM5V1 Mini-MELF 5V1 0.5W | 0.2 | — | — | — | SMD | — | — | — | — | — | — | — | — | — | 500мВт | 2500pcs | — | — | — | — | 5V1 | MiniMELF | — | ||||||||
Transistor KT361B
#6844
|
23551 | СНГ | 856 шт |
2 грн.
|
|
Designed for use in high frequency amplifiers. | 0.2 | — | КТ-13 | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | 150мВт | 1000pcs | 20В | 50мА | 250МГц | 350 | — | — | — | ||||||||
Diode Assembly 2DS523BM
#11817
|
24047 | СНГ | 852 шт |
3 грн.
|
|
Diode assembly, each consisting of two silicon planar epitaxial switching diodes with separate terminals. Are issued in the plastic case with flexible conclusions. | 0.25 | — | — | — | SMD | — | 50V | 20mA | 200mA | — | Pulse | — | — | — | — | 50pcs | — | — | — | — | — | — | assembly | ||||||||
| 20446 | SEMTECH ELECTRONICS | 850 шт |
2 грн.
|
|
0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 1Вт | 500pcs | — | — | — | — | 12V | DO-41 | — | ||||||||||
Chip K176TM2
#9504
|
21941 | СНГ | 847 шт |
5 грн.
|
|
2 D-flip-flops with setting "0" and "1". | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Transistor IRF3205
#2498
|
21008 | INTERNATIONAL RECTIFIER | 825 шт |
25 грн.
|
|
2.8 | — | TO220AB | Field | DIP | — | — | — | — | — | — | MOS n-channel | 55В | 110А | 200Вт | 50pcs | — | — | — | — | — | — | — | |||||||||
ISL6353CRTZ-T microcircuit
#17116
|
29365 | RENESAS | 811 шт |
130 грн.
|
|
Multiphase PWM Regulator for VR12 DDR Memory Systems. | 0.4 | TQFN-EP-40 | — | — | SMD | — | — | — | — | Nutrition | — | — | — | — | — | 6000pcs | — | — | — | — | — | — | — |
