Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Chip K561IE9
#9801
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21375 | СНГ | 806 шт |
6 грн.
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A counter dividing by eight. The IC uses Johnson's octal code (when the counter moves to the next logical state, only one logical variable changes). As one bit of the counter, a clocked MS type D flip-flop with a direct setting input of 0 is used. | 1.1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | ||||||||||
Chip KR1008VZh4 (=S2561)
#8443
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22290 | СНГ | 805 шт |
6 грн.
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Ring tone shaper and is intended for use in ringing devices of telephone sets and in sound signaling devices. | 1 | DIP14 | — | — | DIP | — | — | — | Telephony | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
| 21208 | СНГ | 800 шт |
10 грн.
|
|
Medium precision op amp with ultra-high gain input transistors, low input currents, internal frequency correction and output short circuit protection circuit. | 0.5 | DIP8 | — | — | DIP | — | — | — | Amplifiers | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||||
Transistor KT503D
#10351
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22339 | СНГ | 800 шт |
5 грн.
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Transistors KT503D silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. | 0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 350мВт | 1000pcs | 60В | 350мА | 5МГц | 120 | — | — | — | ||||||||||
Zener diode KS139G
#10379
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22386 | СНГ | 796 шт |
3 грн.
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Silicon zener diode, diffusion-alloy, low power. | 0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | 125мВт | 1000pcs | — | — | — | — | 3V9 | kd-4 | — | ||||||||||
Transistor VN2410L
#7289
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23578 | ON SEMICONDUCTOR | 789 шт |
12 грн.
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0.25 | — | TO92 | Field | DIP | — | — | — | — | — | MOS n-channel | 240В | 200мА | 350мВт | 1000pcs | — | — | — | — | — | — | — | |||||||||||
Zener diode BZX55C 22V
#4207
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20222 | Rectron Semiconductor | 777 шт |
1 грн.
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Zener diode 22V 0.5W (BZX55C 22V) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 22V | DO-35 | — | ||||||||||
| 20392 | TEXAS INSTRUMENTS | 775 шт |
6 грн.
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0.5 | DIP8 | — | — | DIP | — | — | — | Timers | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | ||||||||||||
Transistor KT3115A-2
#10726
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22783 | СНГ | 775 шт |
30 грн.
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Designed for use in the input and subsequent stages of low-noise microwave amplifiers. | 0.1 | — | КТ-22 | Bipolar | SMD | — | — | — | — | — | NPN | — | — | 75мВт | 200pcs | — | 8,5мА | 5ГГц | 110 | — | — | — | ||||||||||
Zener diode KS508A
#14481
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26693 | СНГ | 771 шт |
2 грн.
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Zener diodes KS508A silicon, planar, medium power. Designed to stabilize the nominal voltage of 12.0 V in the stabilization current range of 0.25...23.0 mA. The main technical parameters of the KS508A zener diode: • Rated stabilization voltage: 12 V at Ist 10.5 mA; • Temperature coefficient of stabilization voltage: ±0.11%/°С; • Minimum allowable stabilization current: 0.25 mA; • Maximum allowable stabilization current: 23 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +85 °С. | 0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | 500мВт | 400pcs | — | — | — | — | 12V | kd2 | — | ||||||||||
Diode KD221B
#11390
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23501 | СНГ | 759 шт |
0.70 грн.
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Diodes KD221B silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. | 0.3 | — | — | — | DIP | КД-5А | 200V | 500mA | — | Rectifier | — | — | — | — | 500pcs | — | — | — | — | — | — | single | ||||||||||
| 21386 | СНГ | 755 шт |
40 грн.
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The KR1816BE39 microcircuit is a single-chip 8-bit microcomputer without ROM, designed for processing digital information in computer technology. Number of teams - 96; RAM capacity - 128 bytes, number of input /output lines - 27, the ability to address programs to external ROM - up to 4 KB. Contains 18,000 integral elements. Housing type 2123.40-2, weight no more than 5 g. | 5 | DIP40 | — | — | DIP | — | — | — | Microcontrollers | — | — | — | — | — | 36pcs | — | — | — | — | — | — | — | |||||||||||
Diode BY500-600
#16602
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28881 | DIOTEC SEMICONDUCTOR | 752 шт |
12 грн.
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0.6 | — | — | — | DIP | DO-201AD | 600V | 5A | — | Fast | — | — | — | — | 1000pcs | — | — | — | — | — | — | single | |||||||||||
Transistor MP104
#13968
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26148 | СНГ | 750 шт |
7 грн.
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Transistors MP104 are silicon alloyed pnp amplifying low-frequency ones with non-normalized noise figure. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 60В | 10мА | 0,1МГц | 10 | — | — | — | ||||||||||
Chip K555AP6
#913
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22037 | СНГ | 748 шт |
7 грн.
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8-bit bidirectional 3-state driver | 1.5 | DIP20 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 70pcs | — | — | — | — | — | — | — | ||||||||||
Chip K172LM2
#5708
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25688 | СНГ | 748 шт |
8 грн.
|
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Logic element 10OR-NOT/10OR. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
Transistor KT604BM
#10321
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22271 | СНГ | 741 шт |
4 грн.
|
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KT604BM Transistors silicon mezaplanarny structures npn. | 1 | — | TO126 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 3Вт | 200pcs | 250В | 200мА | 40МГц | 120 | — | — | — | ||||||||||
Chip K561KT3A
#3947
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22139 | СНГ | 725 шт |
6 грн.
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Four bidirectional switches. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
Diode KD243G
#14491
|
26706 | СНГ | 715 шт |
2 грн.
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Diodes KD243G silicon, diffusion, rectifier. Are intended for transformation of alternating voltage with a frequency up to 70 kHz. The main technical characteristics of the diode KD243G: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 1 A; • Inp and max - Maximum pulse forward current: 6 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.1 V at Inp 1 A; • Iobr - Constant reverse current: no more than 10 μA at Uobr 400 V. | 0.4 | — | — | — | DIP | КД-4 | 400V | 1A | — | Rectifier | — | — | — | — | 1000pcs | — | — | — | — | — | — | single | ||||||||||
| 20151 | SEMTECH ELECTRONICS | 686 шт |
1.50 грн.
|
|
1000V*1A | 0.3 | — | — | — | DIP | DO-41 | 1000V | 1A | — | Rectifier | — | — | — | — | 5000pcs | — | — | — | — | — | — | single | |||||||||||
Zener diode BZX55C 3V6
#4188
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20230 | Rectron Semiconductor | 681 шт |
1 грн.
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Zener diode 3.6V 0.5W (BZX55C 3V6) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 3V6 | DO-35 | — | ||||||||||
Transistor KT361G1
#10352
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22340 | СНГ | 680 шт |
2 грн.
|
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Designed for use in high frequency amplifiers. | 0.2 | — | КТ-13 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 150мВт | 1000pcs | 35В | 50мА | 250МГц | 350 | — | — | — | ||||||||||
| 20498 | FAIRCHILD SEMICONDUCTOR | 663 шт |
1 грн.
|
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0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 450мВт | 500pcs | 45В | 100мА | 200МГц | 600 | — | — | — | ||||||||||||
Zener diode BZV55C12V
#11388
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23499 | Rectron Semiconductor | 661 шт |
1 грн.
|
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Zener diode BZV55C12V SOD-80 12V 0.5W | 0.2 | — | — | — | SMD | — | — | — | — | — | — | — | — | 500мВт | 2500pcs | — | — | — | — | 12V | SOD-80 | — | ||||||||||
| 21707 | INTEGRAL | 650 шт |
6 грн.
|
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— | 1 | — | TO126 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 12.5Вт | 1000pcs | 80В | 1.5А | — | — | — | — | — | |||||||||||
Transistor MP13
#14471
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26682 | СНГ | 645 шт |
8 грн.
|
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Transistors MP13 germanium alloy pnp universal low-frequency low-power. Designed for amplification of small low frequency signals, amplification, switching, pulse shaping, applications in ferrite transistor cells. The main technical characteristics of the MP13 transistor: • Transistor structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 0.5 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 200 µA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 25...55; • Sk - Collector junction capacitance: no more than 60 pF; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz. | 1.8 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 15В | 20мА | 0,5МГц | 12 | — | — | — | ||||||||||
Chip K561TV1
#3951
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21378 | СНГ | 640 шт |
4 грн.
|
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Digital microcircuit of the CMOS series. The K561TV1A microcircuits are two JK flip-flops with asynchronous RS inputs and dynamic recording control. Contain 138 integral elements. Housing type 238.16-1, weight no more than 1.5 g. | 1.1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | ||||||||||
Transistor KT315E
#6840
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23555 | СНГ | 638 шт |
2 грн.
|
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Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. | 0.25 | — | КТ-13 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 150мВт | 800 pcs. | 35В | 100мА | 250МГц | 350 | — | — | — | ||||||||||
Transistor MMBT4401 (2X)
#9700
|
21035 | FAIRCHILD SEMICONDUCTOR | 638 шт |
1 грн.
|
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0.1 | — | SOT23 | Bipolar | SMD | — | — | — | — | — | NPN | — | — | 350мВт | 3000pcs | 40В | 600мА | — | 300 | — | — | — | |||||||||||
Rectifier pole KTS201V
#9876
|
21655 | СНГ | 637 шт |
40 грн.
|
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A column of silicon, diffusion, avalanche diodes, pulsed. Designed to convert alternating pulsed voltage with a frequency of up to 1 kHz. | 63 | — | — | — | Screw | — | 6kV | 500mA | — | High voltage | — | — | — | — | 20pcs | — | — | — | — | — | — | assembly |
