Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
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Chip KR531IP3 (=SN74S181)
#10173
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22063 | СНГ | 637 шт |
10 грн.
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ALU for writing two 4-bit words. | 5 | DIP24 | — | — | DIP | — | — | — | Logics | — | — | — | 36pcs | — | — | — | — | — | — | — | ||||||||||
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Zener diode D814V
#13944
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26123 | СНГ | 631 шт |
3 грн.
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Zener diodes D814V silicon, alloy, medium power. Designed to stabilize the voltage of 9.0-10.5 V in the stabilization current range of 3...32 mA. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | 340мВт | 500pcs | — | — | — | — | 10V | kd-8 | — | ||||||||||
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Transistor BC558B
#2383
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22519 | FAIRCHILD SEMICONDUCTOR | 630 шт |
1 грн.
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0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | PNP | 500мВт | 4000pcs | 30В | 100мА | — | 450 | — | — | — | |||||||||||
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Transistor KT645A
#10316
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22265 | INTEGRAL | 628 шт |
3 грн.
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0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | NPN | 500мВт | 1000pcs | 50В | 300мА | — | — | — | — | — | |||||||||||
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Chip MCP130T-475I/TT (POEJ)
#16027
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28264 | MICROHCHIP | 628 шт |
22 грн.
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0.11 | SOT23 | — | — | SMD | — | — | — | Nutrition | — | — | — | 3000pcs | — | — | — | — | — | — | — | |||||||||||
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Transistor KT3130A9 (=ВСW71)
#10107
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21846 | INTEGRAL | 626 шт |
2.50 грн.
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0.1 | — | SOT23 | Bipolar | SMD | — | — | — | — | — | NPN | 100мВт | 1000pcs | 40В | 100мА | 150МГц | 250 | — | — | — | |||||||||||
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Chip KM155LR1
#950
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21300 | СНГ | 622 шт |
5 грн.
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2 logic elements 2-2AND-2OR-NOT, one expandable by OR. | 1.1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
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Zener diode KS224Zh
#10099
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21837 | СНГ | 618 шт |
2.50 грн.
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Zener diode R=0.125W U=24V at Ist=2mA | 0.2 | — | — | — | DIP | — | — | — | — | — | — | 125мВт | 1000pcs | — | — | — | — | 24V | kd2 | — | ||||||||||
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Zener diode D816B
#11968
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24257 | СНГ | 617 шт |
6 грн.
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Medium power silicon zener diode, 27V The main technical parameters of the Zener diode D816B: • Stabilization voltage spread: 24.2... 29.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 8 ohms; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 180 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 27V | ks620 | — | ||||||||||
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Chip K561PU4
#3950
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21931 | СНГ | 615 шт |
4 грн.
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Digital microcircuit of the CMOS series. K561PU4 microcircuits are six level converters. They are used to match CMOS and TTL circuits, as well as low-threshold and high-threshold CMOS circuits. Contains 104 integral elements. Housing type 2103Yu.16-D, weight not more than 1.5 g. | 1.1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | ||||||||||
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Transistor BC547C
#2231
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23481 | DIOTEC SEMICONDUCTOR | 608 шт |
1 грн.
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0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | NPN | 500мВт | 2500pcs | 45В | 100мА | — | 400 | — | — | — | |||||||||||
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Chip K155RE3
#962
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21276 | СНГ | 601 шт |
6 грн.
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Chips K155PE3 are electrically programmable by burning fusible jumpers read only memory (PROM) with a capacity of 256 bits (with the organization of 32 words x 8 bits). | 1 | DIP16 | — | — | DIP | — | — | — | Memory | — | — | — | 90pcs | — | — | — | — | — | — | — | ||||||||||
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Chip K131LN1
#746
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21203 | СНГ | 599 шт |
4 грн.
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6 logical NOT gates. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
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Диод ES1D-E3/61T (ED)
#16913
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29160 | VISHAY | 598 шт |
3 грн.
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0.3 | — | — | — | SMD | DO-214AC, SMA | 200V | 1A | — | Fast | — | — | 1800шт. | — | — | — | — | — | — | single | |||||||||||
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Chip K174UR1
#854
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21967 | СНГ | 597 шт |
10 грн.
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K174UR1 microcircuits are FM signal processing units. Designed to amplify and limit the voltage of intermediate and difference frequencies, frequency detection and electronic adjustment of the audio frequency voltage in television and radio broadcasting receiving equipment. | 1 | DIP14 | — | — | DIP | — | — | — | TV | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
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Diode KD221V
#11453
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23583 | СНГ | 592 шт |
0.80 грн.
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Diodes KD221V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. | 0.3 | — | — | — | DIP | КД-5А | 400V | 300mA | — | Rectifier | — | — | 1000pcs | — | — | — | — | — | — | single | ||||||||||
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Chip K561IE11
#724
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21374 | СНГ | 587 шт |
6 грн.
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Four-bit binary up/down counter. | 1.2 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
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Chip SN74LS138N
#10115
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21854 | MOTOROLA | 585 шт |
13 грн.
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1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 25pcs | — | — | — | — | — | — | — | |||||||||||
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Transistor P214V
#12366
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24701 | СНГ | 584 шт |
15 грн.
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The main technical characteristics of the P214V transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 10 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 20; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 10Вт | 50pcs | 55В | 5А | — | — | — | — | — | ||||||||||
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Zener diode D815B
#14018
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26197 | СНГ | 579 шт |
6 грн.
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Medium power silicon zener diode, 6.8V The main technical parameters of the Zener diode D815B: • Stabilization voltage spread: 6.1... 7.5 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.05%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.8 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.15 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 6V8 | ks620 | — | ||||||||||
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Thyratron MTX-90
#14130
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26311 | СНГ | 579 шт |
15 грн.
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Glow discharge thyratron Produced in glass design. The balloon is filled with neon. The electrode leads are rigid wire. Works in any position. Ambient temperature from 60 to +85° С. Cooling is natural. | 3.5 | — | — | — | DIP | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
| 29026 | NXP | 578 шт |
37 грн.
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5Mbps SOIC-8 CAN Transceivers. | 0.2 | SOIC-8 | — | — | SMD | — | — | — | Interfaces | — | — | — | 2500pcs | — | — | — | — | — | — | — | |||||||||||
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Chip K176IE1
#8380
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22297 | СНГ | 568 шт |
6 грн.
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6-bit binary counter. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
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Zener diode D815Zh
#14014
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26193 | СНГ | 568 шт |
7 грн.
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Medium power silicon zener diode, 180V The main technical parameters of the D815Zh zener diode: • Stabilization voltage spread: 16.2... 19.8 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.11%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 3 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 450 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 18V | ks620 | — | ||||||||||
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Zener diode D817A
#11962
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24251 | СНГ | 565 шт |
6 грн.
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Medium power silicon zener diode, 56V The main technical parameters of the Zener diode D817A: • Stabilization voltage spread: 50.5... 61.5 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 35 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 90 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 3.5 | — | — | — | Screw | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 56V | ks620 | — | ||||||||||
| 20624 | TEXAS INSTRUMENTS | 562 шт |
12 грн.
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0.5 | SO16 | — | — | SMD | — | — | — | Logics | — | — | — | 2500pcs | — | — | — | — | — | — | — | ||||||||||||
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Zener diode KS433A
#11425
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23542 | СНГ | 561 шт |
4 грн.
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Zener diodes KS433A silicon, diffusion-alloy, medium power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 3...191 mA. The main technical parameters of the KS433A zener diode: • Rated stabilization voltage: 3.3 V at Ist 30 mA; • Stabilization voltage spread: 2.97... 3.63 V; • Temperature coefficient of stabilization voltage: -0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 25 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 191 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С | 0.7 | — | — | — | DIP | — | — | — | — | — | — | 1Вт | 500pcs | — | — | — | — | 3V3 | kd-8 | — | ||||||||||
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Chip K561ID1
#7360
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21326 | СНГ | 560 шт |
6 грн.
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Binary Decimal Decoder. | 1.1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | ||||||||||
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Chip KM155LN1
#981
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21293 | СНГ | 550 шт |
8 грн.
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Chips KM155LN1 are 6 logical NOT elements. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
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Chip DM74LS27N
#9767
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21310 | FAIRCHILD SEMICONDUCTOR | 546 шт |
7 грн.
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Triple 3-Input NOR Gate | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 25pcs | — | — | — | — | — | — | — |