Active radio components

Results: 8086

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Appointment Diode type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Stabilization voltage Zener diode housing type Diode design
22063 СНГ 637 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
ALU for writing two 4-bit words. 5 DIP24 DIP Logics 36pcs
26123 СНГ 631 шт
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Zener diodes D814V silicon, alloy, medium power. Designed to stabilize the voltage of 9.0-10.5 V in the stabilization current range of 3...32 mA. 0.8 DIP 340мВт 500pcs 10V kd-8
22519 FAIRCHILD SEMICONDUCTOR 630 шт
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
0.3 TO92 Bipolar DIP PNP 500мВт 4000pcs 30В 100мА 450
22265 INTEGRAL 628 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP NPN 500мВт 1000pcs 50В 300мА
28264 MICROHCHIP 628 шт
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
0.11 SOT23 SMD Nutrition 3000pcs
21846 INTEGRAL 626 шт
2.50 грн.
10+2,37 грн.
50+2,25 грн.
100+2 грн.
0.1 SOT23 Bipolar SMD NPN 100мВт 1000pcs 40В 100мА 150МГц 250
21300 СНГ 622 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
2 logic elements 2-2AND-2OR-NOT, one expandable by OR. 1.1 DIP14 DIP Logics 100 pieces.
21837 СНГ 618 шт
2.50 грн.
50+2,25 грн.
100+2 грн.
250+1,87 грн.
Zener diode R=0.125W U=24V at Ist=2mA 0.2 DIP 125мВт 1000pcs 24V kd2
24257 СНГ 617 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 27V The main technical parameters of the Zener diode D816B: • Stabilization voltage spread: 24.2... 29.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 8 ohms; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 180 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С 2.5 Screw 5Вт 100 pieces. 27V ks620
21931 СНГ 615 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
Digital microcircuit of the CMOS series. K561PU4 microcircuits are six level converters. They are used to match CMOS and TTL circuits, as well as low-threshold and high-threshold CMOS circuits. Contains 104 integral elements. Housing type 2103Yu.16-D, weight not more than 1.5 g. 1.1 DIP14 DIP Logics 90pcs
23481 DIOTEC SEMICONDUCTOR 608 шт
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
0.3 TO92 Bipolar DIP NPN 500мВт 2500pcs 45В 100мА 400
21276 СНГ 601 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Chips K155PE3 are electrically programmable by burning fusible jumpers read only memory (PROM) with a capacity of 256 bits (with the organization of 32 words x 8 bits). 1 DIP16 DIP Memory 90pcs
21203 СНГ 599 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
6 logical NOT gates. 1 DIP14 DIP Logics 100 pieces.
29160 VISHAY 598 шт
3 грн.
100+2,70 грн.
200+2,40 грн.
500+2,10 грн.
0.3 SMD DO-214AC, SMA 200V 1A Fast 1800шт. single
21967 СНГ 597 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
K174UR1 microcircuits are FM signal processing units. Designed to amplify and limit the voltage of intermediate and difference frequencies, frequency detection and electronic adjustment of the audio frequency voltage in television and radio broadcasting receiving equipment. 1 DIP14 DIP TV 100 pieces.
23583 СНГ 592 шт
0.80 грн.
50+0,72 грн.
200+0,64 грн.
500+0,56 грн.
Diodes KD221V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. 0.3 DIP КД-5А 400V 300mA Rectifier 1000pcs single
21374 СНГ 587 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Four-bit binary up/down counter. 1.2 DIP16 DIP Logics 100 pieces.
21854 MOTOROLA 585 шт
13 грн.
10+12,35 грн.
50+11,70 грн.
100+10,40 грн.
1 DIP16 DIP Logics 25pcs
24701 СНГ 584 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the P214V transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 10 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 20; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. 10 Bipolar DIP PNP 10Вт 50pcs 55В
26197 СНГ 579 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 6.8V The main technical parameters of the Zener diode D815B: • Stabilization voltage spread: 6.1... 7.5 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.05%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.8 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.15 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С 2.5 Screw 8Вт 100 pieces. 6V8 ks620
26311 СНГ 579 шт
15 грн.
10+13,50 грн.
20+12,75 грн.
50+12 грн.
Glow discharge thyratron Produced in glass design. The balloon is filled with neon. The electrode leads are rigid wire. Works in any position. Ambient temperature from 60 to +85° С. Cooling is natural. 3.5 DIP 100 pieces.
29026 NXP 578 шт
37 грн.
10+35,15 грн.
50+33,30 грн.
100+29,60 грн.
5Mbps SOIC-8 CAN Transceivers. 0.2 SOIC-8 SMD Interfaces 2500pcs
22297 СНГ 568 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
6-bit binary counter. 1 DIP14 DIP Logics 100 pieces.
26193 СНГ 568 шт
7 грн.
50+6,30 грн.
100+5,60 грн.
250+5,25 грн.
Medium power silicon zener diode, 180V The main technical parameters of the D815Zh zener diode: • Stabilization voltage spread: 16.2... 19.8 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.11%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 3 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 450 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С 2.5 Screw 8Вт 100 pieces. 18V ks620
24251 СНГ 565 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 56V The main technical parameters of the Zener diode D817A: • Stabilization voltage spread: 50.5... 61.5 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 35 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 90 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С 3.5 Screw 5Вт 100 pieces. 56V ks620
20624 TEXAS INSTRUMENTS 562 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
0.5 SO16 SMD Logics 2500pcs
23542 СНГ 561 шт
4 грн.
50+3,60 грн.
100+3,20 грн.
250+3 грн.
Zener diodes KS433A silicon, diffusion-alloy, medium power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 3...191 mA. The main technical parameters of the KS433A zener diode: • Rated stabilization voltage: 3.3 V at Ist 30 mA; • Stabilization voltage spread: 2.97... 3.63 V; • Temperature coefficient of stabilization voltage: -0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 25 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 191 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С 0.7 DIP 1Вт 500pcs 3V3 kd-8
21326 СНГ 560 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Binary Decimal Decoder. 1.1 DIP16 DIP Logics 90pcs
21293 СНГ 550 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Chips KM155LN1 are 6 logical NOT elements. 1 DIP14 DIP Logics 100 pieces.
21310 FAIRCHILD SEMICONDUCTOR 546 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Triple 3-Input NOR Gate 1 DIP14 DIP Logics 25pcs