Active radio components

Results: 8086

	MPN	Article	Brand	In stock	Price	Discounts	Quantity	Description	Weight g.	Type of shell	Transistor case type	Transistor type	Mounting type	Type of shell	Urev. max, V	Ipr. max.	Appointment	Diode type	Structure	Power	Factory packaging	Collector-emitter voltage	Collector current	Frequency	Current gain	Stabilization voltage	Zener diode housing type	Diode design

Transistor BC558B

#2383

22519

FAIRCHILD SEMICONDUCTOR

630 шт

1 грн.

10+	0,95 грн.
50+	0,90 грн.
100+	0,80 грн.
500+	0,70 грн.

0.3

—

TO92

Bipolar

DIP

—

PNP

500мВт

4000pcs

30В

100мА

—

450

—

Transistor KT645A

#10316

22265

INTEGRAL

628 шт

3 грн.

10+	2,85 грн.
50+	2,70 грн.
100+	2,40 грн.

0.3

—

TO92

Bipolar

DIP

—

NPN

500мВт

1000pcs

50В

300мА

—

Chip MCP130T-475I/TT (POEJ)

#16027

28264

MICROHCHIP

628 шт

22 грн.

10+	20,90 грн.
50+	19,80 грн.
100+	17,60 грн.

0.11

SOT23

—

SMD

—

Nutrition

—

3000pcs

—

Transistor BD139-16 (=KT815G)

#9907

21707

INTEGRAL

626 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.
500+	4,20 грн.

—

TO126

Bipolar

DIP

—

NPN

12.5Вт

1000pcs

80В

1.5А

—

Transistor KT3130A9 (=ВСW71)

#10107

21846

INTEGRAL

626 шт

2.50 грн.

10+	2,37 грн.
50+	2,25 грн.
100+	2 грн.

0.1

—

SOT23

Bipolar

SMD

—

NPN

100мВт

1000pcs

40В

100мА

150МГц

250

—

Zener diode D814V

#13944

26123

СНГ

626 шт

3 грн.

50+	2,70 грн.
100+	2,40 грн.
250+	2,25 грн.

Zener diodes D814V silicon, alloy, medium power. Designed to stabilize the voltage of 9.0-10.5 V in the stabilization current range of 3...32 mA.

0.8

—

DIP

—

340мВт

500pcs

—

10V

kd-8

—

Chip KM155LR1

#950

21300

СНГ

622 шт

5 грн.

10+	4,75 грн.
50+	4,50 грн.
100+	4 грн.

2 logic elements 2-2AND-2OR-NOT, one expandable by OR.

1.1

DIP14

—

DIP

—

Logics

—

100 pieces.

—

Zener diode KS224Zh

#10099

21837

СНГ

618 шт

2.50 грн.

50+	2,25 грн.
100+	2 грн.
250+	1,87 грн.

Zener diode R=0.125W U=24V at Ist=2mA

0.2

—

DIP

—

125мВт

1000pcs

—

24V

kd2

—

Zener diode D816B

#11968

24257

СНГ

617 шт

6 грн.

50+	5,40 грн.
100+	4,80 грн.
250+	4,50 грн.

Medium power silicon zener diode, 27V The main technical parameters of the Zener diode D816B: • Stabilization voltage spread: 24.2... 29.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 8 ohms; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 180 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С

2.5

—

Screw

—

5Вт

100 pieces.

—

27V

ks620

—

Chip K561PU4

#3950

21931

СНГ

615 шт

4 грн.

10+	3,80 грн.
50+	3,60 грн.
100+	3,20 грн.

Digital microcircuit of the CMOS series. K561PU4 microcircuits are six level converters. They are used to match CMOS and TTL circuits, as well as low-threshold and high-threshold CMOS circuits. Contains 104 integral elements. Housing type 2103Yu.16-D, weight not more than 1.5 g.

1.1

DIP14

—

DIP

—

Logics

—

90pcs

—

Transistor BC547C

#2231

23481

DIOTEC SEMICONDUCTOR

604 шт

1 грн.

10+	0,95 грн.
50+	0,90 грн.
100+	0,80 грн.
500+	0,70 грн.

0.3

—

TO92

Bipolar

DIP

—

NPN

500мВт

2500pcs

45В

100мА

—

400

—

Chip K131LN1

#746

21203

СНГ

599 шт

4 грн.

10+	3,80 грн.
50+	3,60 грн.
100+	3,20 грн.

6 logical NOT gates.

DIP14

—

DIP

—

Logics

—

100 pieces.

—

Chip K174UR1

#854

21967

СНГ

597 шт

10 грн.

10+	9,50 грн.
50+	9 грн.
100+	8 грн.

K174UR1 microcircuits are FM signal processing units. Designed to amplify and limit the voltage of intermediate and difference frequencies, frequency detection and electronic adjustment of the audio frequency voltage in television and radio broadcasting receiving equipment.

DIP14

—

DIP

—

100 pieces.

—

Diode KD221V

#11453

23583

СНГ

592 шт

0.80 грн.

50+	0,72 грн.
200+	0,64 грн.
500+	0,56 грн.

Diodes KD221V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz.

0.3

—

DIP

КД-5А

400V

300mA

—

Rectifier

—

1000pcs

—

single

Диод ES1D-E3/61T (ED)

#16913

29160

VISHAY

588 шт

3 грн.

100+	2,70 грн.
200+	2,40 грн.
500+	2,10 грн.

0.3

—

SMD

DO-214AC, SMA

200V

—

Fast

—

1800шт.

—

single

Chip SN74LS138N

#10115

21854

MOTOROLA

585 шт

13 грн.

10+	12,35 грн.
50+	11,70 грн.
100+	10,40 грн.

DIP16

—

DIP

—

Logics

—

25pcs

—

Chip K561IE11

#724

21374

СНГ

584 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

Four-bit binary up/down counter.

1.2

DIP16

—

DIP

—

Logics

—

100 pieces.

—

Transistor P214V

#12366

24701

СНГ

584 шт

15 грн.

10+	14,25 грн.
50+	13,50 грн.
100+	12 грн.

The main technical characteristics of the P214V transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 10 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 20; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm.

—

Bipolar

DIP

—

PNP

10Вт

50pcs

55В

5А

—

Thyratron MTX-90

#14130

26311

СНГ

579 шт

15 грн.

10+	13,50 грн.
20+	12,75 грн.
50+	12 грн.

Glow discharge thyratron Produced in glass design. The balloon is filled with neon. The electrode leads are rigid wire. Works in any position. Ambient temperature from 60 to +85° С. Cooling is natural.

3.5

—

DIP

—

100 pieces.

—

Chip K176IE1

#8380

22297

СНГ

565 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

6-bit binary counter.

DIP14

—

DIP

—

Logics

—

100 pieces.

—

Zener diode D817A

#11962

24251

СНГ

565 шт

6 грн.

50+	5,40 грн.
100+	4,80 грн.
250+	4,50 грн.

Medium power silicon zener diode, 56V The main technical parameters of the Zener diode D817A: • Stabilization voltage spread: 50.5... 61.5 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 35 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 90 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С

3.5

—

Screw

—

5Вт

100 pieces.

—

56V

ks620

—

Zener diode D815B

#14018

26197

СНГ

565 шт

6 грн.

50+	5,40 грн.
100+	4,80 грн.
250+	4,50 грн.

Medium power silicon zener diode, 6.8V The main technical parameters of the Zener diode D815B: • Stabilization voltage spread: 6.1... 7.5 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.05%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.8 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.15 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С

2.5

—

Screw

—

8Вт

100 pieces.

—

6V8

ks620

—

Chip ULN2003ADR (ULN2003A)

#9152

20624

TEXAS INSTRUMENTS

562 шт

12 грн.

10+	11,40 грн.
50+	10,80 грн.
100+	9,60 грн.

0.5

SO16

—

SMD

—

Logics

—

2500pcs

—

Zener diode KS433A

#11425

23542

СНГ

561 шт

4 грн.

50+	3,60 грн.
100+	3,20 грн.
250+	3 грн.

Zener diodes KS433A silicon, diffusion-alloy, medium power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 3...191 mA. The main technical parameters of the KS433A zener diode: • Rated stabilization voltage: 3.3 V at Ist 30 mA; • Stabilization voltage spread: 2.97... 3.63 V; • Temperature coefficient of stabilization voltage: -0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 25 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 191 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С

0.7

—

DIP

—

1Вт

500pcs

—

3V3

kd-8

—

Microcircuit TJA1051T/3/1 (=A1051/3)

#16781

29026

NXP

561 шт

37 грн.

10+	35,15 грн.
50+	33,30 грн.
100+	29,60 грн.

5Mbps SOIC-8 CAN Transceivers.

0.2

SOIC-8

—

SMD

—

Interfaces

—

2500pcs

—

Chip K561ID1

#7360

21326

СНГ

555 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

Binary Decimal Decoder.

1.1

DIP16

—

DIP

—

Logics

—

90pcs

—

Chip KM155LN1

#981

21293

СНГ

550 шт

8 грн.

10+	7,60 грн.
50+	7,20 грн.
100+	6,40 грн.

Chips KM155LN1 are 6 logical NOT elements.

DIP14

—

DIP

—

Logics

—

100 pieces.

—

Chip DM74LS27N

#9767

21310

FAIRCHILD SEMICONDUCTOR

546 шт

7 грн.

10+	6,65 грн.
50+	6,30 грн.
100+	5,60 грн.

Triple 3-Input NOR Gate

DIP14

—

DIP

—

Logics

—

25pcs

—

Chip K1002IR1

#15695

27934

СНГ

546 шт

30 грн.

10+	28,50 грн.
50+	27 грн.
100+	24 грн.

The K1002IR1 microcircuit is a register storage device with a capacity of 304 bits (38x8).

1.2

SO24

—

SMD

—

Memory

—

70pcs

—

Diode SF18

#10439

22453

MIC

545 шт

2 грн.

100+	1,80 грн.
200+	1,60 грн.
500+	1,40 грн.

0.3

—

DIP

DO-41

600V

—

Fast

—

1000pcs

—

single