Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
|---|
Chip K1002IR1
#15695
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27934 | СНГ | 546 шт |
30 грн.
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|
The K1002IR1 microcircuit is a register storage device with a capacity of 304 bits (38x8). | 1.2 | SO24 | — | — | SMD | — | — | — | Memory | — | — | — | 70pcs | — | — | — | — | — | — | — | — | ||||||||||
Diode SF18
#10439
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22453 | MIC | 545 шт |
2 грн.
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|
0.3 | — | — | — | DIP | DO-41 | 600V | 1A | — | Fast | — | — | 1000pcs | — | — | — | — | — | — | — | single | |||||||||||
Triac MAC97A6
#5629
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21142 | NXP | 535 шт |
3 грн.
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0.2 | — | — | — | DIP | TO-92 | 400V | 600mA | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | — | |||||||||||
Chip CY27C256-70WC
#9868
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21647 | CYPRESS | 534 шт |
50 грн.
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4 | DIP28 | — | — | DIP | — | — | — | Memory | — | — | — | 14pcs | — | — | — | — | — | — | — | — | |||||||||||
Transistor MP15
#3476
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23010 | СНГ | 533 шт |
5 грн.
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Transistor MP15 germanium alloy pnp universal low-frequency low-power. Designed for small low frequency signal amplification, amplification, switching, pulse shaping | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 15В | 20мА | 2МГц | 60 | — | — | — | — | ||||||||||
Zener diode D815D
#13776
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25955 | СНГ | 525 шт |
7 грн.
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Medium power silicon zener diode, 12V The main technical parameters of the Zener diode D815D: • Stabilization voltage spread: 10.8... 13.3 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.09%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 2 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 650 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Working range of ambient temperature: -60... +125 °С. | 4.2 | — | — | — | Screw | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 12V | ks620 | — | — | ||||||||||
Chip KR559IP11
#9720
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22302 | СНГ | 518 шт |
6 грн.
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4-bit transceiver | 1.3 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||||
Diode KD202D
#14040
|
26219 | СНГ | 514 шт |
8 грн.
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Diodes KD202D silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the KD202D diode: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 200 V | 5 | — | — | — | Screw | КДЮ-11 | 140V | 5A | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||||
Chip 318NR10V
#11945
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24231 | СНГ | 509 шт |
90 грн.
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0.7 | SO16 | — | — | SMD | — | — | — | Telephony | — | — | — | 40pcs | — | — | — | — | — | — | — | — | |||||||||||
Diode bridge KTS405E
#8870
|
22957 | СНГ | 502 шт |
6 грн.
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Diode bridge 1A 100V. | 4 | — | — | — | DIP | — | 100V | 1A | — | Diode bridge | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||||
Diode KD209B
#15523
|
27762 | СНГ | 501 шт |
1 грн.
|
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Основные технические характеристики диода КД209Б: • Uoбp max - Максимальное постоянное обратное напряжение: 600 В; • Inp max - Максимальный прямой ток: 500 мА; • fд - Рабочая частота диода: 1 кГц; • Unp - Постоянное прямое напряжение: не более 1 В при Inp 500 мА; • Ioбp - Постоянный обратный ток: не более 100 мкА при Uoбp 600 В. | 0.4 | — | — | — | DIP | — | 600V | 500mA | — | Rectifier | — | — | 500pcs | — | — | — | — | — | — | — | single | ||||||||||
Zener diode 1N5349B(12V)
#11059
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23078 | ON SEMICONDUCTOR | 500 шт |
4 грн.
|
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1 | — | — | — | DIP | — | — | — | — | — | — | 5Вт | 500pcs | — | — | — | — | 12V | do201 | — | — | |||||||||||
| 29479 | EVERLIGHT | 500 шт |
3 грн.
|
|
0.3 | DIP4 | — | — | DIP | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||||
Chip LD1117S50CTR (=LD50)
#14122
|
26303 | ST MICROELECTRONICS | 497 шт |
6 грн.
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0.5 | SOT223 | — | — | SMD | — | — | — | Nutrition | — | — | — | 2000pcs | — | — | — | — | — | — | — | — | |||||||||||
| 24035 | СНГ | 492 шт |
24 грн.
|
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Transistor assemblies consisting of two silicon epitaxial-planar structures of pnp amplifying transistors on the same chip with separate leads. Designed for use in broadband balanced, differential and operational amplifiers and other stages of hermetically sealed equipment, which require the identity of the parameters of two transistors. | 2 | — | — | Bipolar | SMD | — | — | — | — | — | PNPx2 | 20мВт | 150pcs | 10В | 20мА | 500МГц | 180 | — | — | — | — | |||||||||||
| 26195 | СНГ | 490 шт |
8 грн.
|
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Medium power silicon zener diode, 27V The main technical parameters of the Zener diode D816B: • Stabilization voltage spread: 24.2... 29.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 8 ohms; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 180 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 27V | ks620 | — | — | |||||||||||
| 29481 | EVERLIGHT | 490 шт |
3 грн.
|
|
0.3 | SO4 | — | — | DIP | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||||
Chip NE555D
#9024
|
20574 | TEXAS INSTRUMENTS | 488 шт |
5 грн.
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|
0.5 | SO8 | — | — | SMD | — | — | — | Timers | — | — | — | 2500pcs | — | — | — | — | — | — | — | — | |||||||||||
| 29480 | EVERLIGHT | 488 шт |
3 грн.
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0.3 | DIP4 | — | — | DIP | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||||
Chip K293LP1A dip8
#7421
|
21976 | СНГ | 487 шт |
6 грн.
|
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Opto-switch-inverter. | 0.5 | DIP8 | — | — | DIP | — | — | — | Logics | — | — | — | 200pcs | — | — | — | — | — | — | — | — | ||||||||||
Zener diode D818A
#13964
|
26144 | СНГ | 487 шт |
3 грн.
|
|
The main technical parameters of the Zener diode D818A: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 9... 11 V; • Temperature coefficient of stabilization voltage: 0... +0.023%/°С; • Temporary instability of stabilization voltage: ± 0.11%; • Zener diode differential resistance: 70 Ohm at Ist 3 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Ambient temperature operating range: -60... +125 °С | 0.8 | — | — | — | DIP | — | — | — | — | — | — | 300мВт | 200pcs | — | — | — | — | 9V | kd-8 | — | — | ||||||||||
Transistor KT502A
#10350
|
22338 | СНГ | 486 шт |
5 грн.
|
|
Transistors KT502A silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters | 0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | PNP | 350мВт | 1000pcs | 25В | 350мА | 5МГц | 120 | — | — | — | — | ||||||||||
SS9014C (S9014)
#8690
|
20398 | FAIRCHILD SEMICONDUCTOR | 484 шт |
1 грн.
|
|
0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | NPN | 450мВт | 500pcs | 45В | 100мА | — | 600 | — | — | — | — | |||||||||||
Thyristor BT169D
#9850
|
21629 | NXP | 483 шт |
3 грн.
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0.3 | — | — | — | DIP | — | — | — | — | — | — | — | 500pcs | — | — | — | — | — | — | — | — | |||||||||||
| 29478 | EVERLIGHT | 480 шт |
3 грн.
|
|
0.3 | DIP4 | — | — | DIP | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||||
Diode 20A10 (20A, 1000V)
#17182
|
29432 | YFW | 478 шт |
11 грн.
|
|
1000V 20A | 1.8 | — | — | — | DIP | R-6 | 1000V | 20A | — | Rectifier | — | — | 500pcs | — | — | — | — | — | — | — | single | ||||||||||
Chip K561TP2A
#4056
|
21405 | СНГ | 476 шт |
6 грн.
|
|
Digital microcircuit of the CMOS series. The K561TP2A microcircuits are four RS-flip-flops (asynchronous) with a third state at the input. Contain 154 integral elements. | 1.1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip KR142EN1A
#926
|
21927 | СНГ | 474 шт |
12 грн.
|
|
KR142EN1A microcircuits are compensation-type voltage stabilizers with adjustable output voltage of positive polarity and a load current of 150 mA. They have protection against short circuits and overloads and a circuit for remote shutdown by an external signal. An external divider is used to adjust the output voltage. | 1 | DIP14 | — | — | DIP | — | — | — | Nutrition | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
| 25806 | ST MICROELECTRONICS | 470 шт |
5 грн.
|
|
0.12 | — | — | — | SMD | SOT323-6 | — | — | — | Protective | — | 100Вт | 3000pcs | — | — | — | — | — | — | 6.1V | assembly | ||||||||||||
| 22323 | СНГ | 466 шт |
8 грн.
|
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PWM controller up to 200 kHz. Upit=8-40V, Iout=200 mA | 1.2 | DIP16 | — | — | DIP | — | — | — | Nutrition | — | — | — | 90pcs | — | — | — | — | — | — | — | — |
