Active radio components

Results: 8086

	MPN	Article	Brand	In stock	Price	Discounts	Quantity	Description	Weight g.	Type of shell	Transistor case type	Transistor type	Mounting type	Type of shell	Urev. max, V	Ipr. max.	Appointment	Diode type	Structure	Power	Factory packaging	Collector-emitter voltage	Collector current	Frequency	Current gain	Stabilization voltage	Zener diode housing type	Diode design

Zener diode D815Zh

#14014

26193

СНГ

538 шт

7 грн.

50+	6,30 грн.
100+	5,60 грн.
250+	5,25 грн.

Medium power silicon zener diode, 180V The main technical parameters of the D815Zh zener diode: • Stabilization voltage spread: 16.2... 19.8 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.11%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 3 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 450 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С

2.5

—

Screw

—

8Вт

100 pieces.

—

18V

ks620

—

Triac MAC97A6

#5629

21142

NXP

535 шт

3 грн.

10+	2,70 грн.
50+	2,40 грн.

0.2

—

DIP

TO-92

400V

600mA

—

1000pcs

—

Chip CY27C256-70WC

#9868

21647

CYPRESS

534 шт

50 грн.

10+	47,50 грн.
50+	45 грн.
100+	40 грн.

DIP28

—

DIP

—

Memory

—

14pcs

—

Transistor MP15

#3476

23010

СНГ

533 шт

5 грн.

10+	4,75 грн.
50+	4,50 грн.
100+	4 грн.

Transistor MP15 germanium alloy pnp universal low-frequency low-power. Designed for small low frequency signal amplification, amplification, switching, pulse shaping

1.8

—

КТЮ-3-3

Bipolar

DIP

—

PNP

150мВт

100 pieces.

15В

20мА

2МГц

—

Chip K155RE3

#962

21276

СНГ

521 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

Chips K155PE3 are electrically programmable by burning fusible jumpers read only memory (PROM) with a capacity of 256 bits (with the organization of 32 words x 8 bits).

DIP16

—

DIP

—

Memory

—

90pcs

—

Chip KR559IP11

#9720

22302

СНГ

518 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

4-bit transceiver

1.3

DIP16

—

DIP

—

Logics

—

90pcs

—

Diode KD202D

#14040

26219

СНГ

514 шт

8 грн.

50+	7,20 грн.
200+	6,40 грн.
500+	5,60 грн.

Diodes KD202D silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the KD202D diode: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 200 V

—

Screw

КДЮ-11

140V

—

Rectifier

—

100 pieces.

—

single

Chip 318NR10V

#11945

24231

СНГ

509 шт

90 грн.

10+	85,50 грн.
50+	81 грн.
100+	72 грн.

0.7

SO16

—

SMD

—

Telephony

—

40pcs

—

Diode KD209B

#15523

27762

СНГ

501 шт

1 грн.

50+	0,90 грн.
200+	0,80 грн.
500+	0,70 грн.

Основные технические характеристики диода КД209Б: • Uoбp max - Максимальное постоянное обратное напряжение: 600 В; • Inp max - Максимальный прямой ток: 500 мА; • fд - Рабочая частота диода: 1 кГц; • Unp - Постоянное прямое напряжение: не более 1 В при Inp 500 мА; • Ioбp - Постоянный обратный ток: не более 100 мкА при Uoбp 600 В.

0.4

—

DIP

—

600V

500mA

—

Rectifier

—

500pcs

—

single

Diode bridge KTS405E

#8870

22957

СНГ

497 шт

6 грн.

Diode bridge 1A 100V.

—

DIP

—

100V

—

Diode bridge

—

100 pieces.

—

Chip LD1117S50CTR (=LD50)

#14122

26303

ST MICROELECTRONICS

497 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

0.5

SOT223

—

SMD

—

Nutrition

—

2000pcs

—

Zener diode 1N5349B(12V)

#11059

23078

ON SEMICONDUCTOR

495 шт

4 грн.

50+	3,60 грн.
100+	3,20 грн.
250+	3 грн.

—

DIP

—

5Вт

500pcs

—

12V

do201

—

Zener diode D815D

#13776

25955

СНГ

495 шт

7 грн.

50+	6,30 грн.
100+	5,60 грн.
250+	5,25 грн.

Medium power silicon zener diode, 12V The main technical parameters of the Zener diode D815D: • Stabilization voltage spread: 10.8... 13.3 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.09%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 2 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 650 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Working range of ambient temperature: -60... +125 °С.

4.2

—

Screw

—

8Вт

100 pieces.

—

12V

ks620

—

Transistor assembly 2TC393A-1H

#11806

24035

СНГ

492 шт

24 грн.

10+	22,80 грн.
50+	21,60 грн.
100+	19,20 грн.

Transistor assemblies consisting of two silicon epitaxial-planar structures of pnp amplifying transistors on the same chip with separate leads. Designed for use in broadband balanced, differential and operational amplifiers and other stages of hermetically sealed equipment, which require the identity of the parameters of two transistors.

—

Bipolar

SMD

—

PNPx2

20мВт

150pcs

10В

20мА

500МГц

180

—

Zener diode D816B T (tropical design)

#14016

26195

СНГ

490 шт

8 грн.

50+	7,20 грн.
100+	6,40 грн.
250+	6 грн.

Medium power silicon zener diode, 27V The main technical parameters of the Zener diode D816B: • Stabilization voltage spread: 24.2... 29.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 8 ohms; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 180 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С

2.5

—

Screw

—

5Вт

100 pieces.

—

27V

ks620

—

Chip K293LP1A dip8

#7421

21976

СНГ

487 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

Opto-switch-inverter.

0.5

DIP8

—

DIP

—

Logics

—

200pcs

—

Zener diode D818A

#13964

26144

СНГ

487 шт

3 грн.

50+	2,70 грн.
100+	2,40 грн.
250+	2,25 грн.

The main technical parameters of the Zener diode D818A: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 9... 11 V; • Temperature coefficient of stabilization voltage: 0... +0.023%/°С; • Temporary instability of stabilization voltage: ± 0.11%; • Zener diode differential resistance: 70 Ohm at Ist 3 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Ambient temperature operating range: -60... +125 °С

0.8

—

DIP

—

300мВт

200pcs

—

kd-8

—

Chip NE555D

#9024

20574

TEXAS INSTRUMENTS

486 шт

5 грн.

10+	4,75 грн.
50+	4,50 грн.
100+	4 грн.

0.5

SO8

—

SMD

—

Timers

—

2500pcs

—

Transistor KT502A

#10350

22338

СНГ

486 шт

5 грн.

10+	4,75 грн.
50+	4,50 грн.
100+	4 грн.

Transistors KT502A silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters

0.3

—

TO92

Bipolar

DIP

—

PNP

350мВт

1000pcs

25В

350мА

5МГц

120

—

Optocoupler EL817(C)-F CTR=200...400% (=PC817C, LTV817C)

#17227

29480

EVERLIGHT

486 шт

3 грн.

10+	2,70 грн.
50+	2,40 грн.

0.3

DIP4

—

DIP

—

100 pieces.

—

Optocoupler EL817(B)-F CTR=130...260% (=PC817B, LTV817B)

#17226

29479

EVERLIGHT

485 шт

3 грн.

10+	2,70 грн.
50+	2,40 грн.

0.3

DIP4

—

DIP

—

100 pieces.

—

SS9014C (S9014)

#8690

20398

FAIRCHILD SEMICONDUCTOR

484 шт

1 грн.

10+	0,95 грн.
50+	0,90 грн.
100+	0,80 грн.
500+	0,70 грн.

0.3

—

TO92

Bipolar

DIP

—

NPN

450мВт

500pcs

45В

100мА

—

600

—

Thyristor BT169D

#9850

21629

NXP

483 шт

3 грн.

10+

2,70 грн.

0.3

—

DIP

—

500pcs

—

Diode 20A10 (20A, 1000V)

#17182

29432

YFW

478 шт

11 грн.

100+	9,90 грн.
200+	8,80 грн.
500+	7,70 грн.

1000V 20A

1.8

—

DIP

R-6

1000V

20A

—

Rectifier

—

500pcs

—

single

Chip KR142EN1A

#926

21927

СНГ

474 шт

12 грн.

10+	11,40 грн.
50+	10,80 грн.
100+	9,60 грн.

KR142EN1A microcircuits are compensation-type voltage stabilizers with adjustable output voltage of positive polarity and a load current of 150 mA. They have protection against short circuits and overloads and a circuit for remote shutdown by an external signal. An external divider is used to adjust the output voltage.

DIP14

—

DIP

—

Nutrition

—

100 pieces.

—

Chip K561TP2A

#4056

21405

СНГ

473 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

Digital microcircuit of the CMOS series. The K561TP2A microcircuits are four RS-flip-flops (asynchronous) with a third state at the input. Contain 154 integral elements.

1.1

DIP16

—

DIP

—

Logics

—

90pcs

—

Microcircuit KR1114EU4 b/mark. (=TL494)

#9724

22323

СНГ

466 шт

8 грн.

10+	7,60 грн.
50+	7,20 грн.
100+	6,40 грн.

PWM controller up to 200 kHz. Upit=8-40V, Iout=200 mA

1.2

DIP16

—

DIP

—

Nutrition

—

90pcs

—

Optocoupler EL817S1(C)(TU)-F CTR=200...400% (=PC817CS, LTV817SC)

#17228

29481

EVERLIGHT

466 шт

3 грн.

10+	2,70 грн.
50+	2,40 грн.

0.3

SO4

—

DIP

—

100 pieces.

—

Chip K561RU2

#732

22140

СНГ

460 шт

10 грн.

10+	9,50 грн.
50+	9 грн.
100+	8 грн.

256-bit (256 x 1) static RAM with control circuit.

1.2

DIP16

—

DIP

—

Memory

—

100 pieces.

—

Transistor BC327-40

#2379

22516

FAIRCHILD SEMICONDUCTOR

458 шт

1 грн.

10+	0,95 грн.
50+	0,90 грн.
100+	0,80 грн.
500+	0,70 грн.

0.25

—

TO92

Bipolar

DIP

—

PNP

625мВт

4000pcs

50В

800мА

—

400

—