Thyristors, triacs

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Factory packaging
23631 ST MICROELECTRONICS
13 грн.
10+11,70 грн.
50+10,40 грн.
2.8 DIP TO-220 600V 8A 50pcs
24260 СНГ
120 грн.
T50-11 thyristors are designed to operate in DC and AC circuits of various power electrical installations with a frequency of up to 500 Hz, as well as in semiconductor power converters, non-contact switching devices. 180 Cooler 1100V 50A 1 PC.
24592 СНГ
20 грн.
Silicon thyristors KU202I are planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. 11 Screw 200V 10A 40pcs
24594 СНГ
15 грн.
The main technical parameters of the thyristor 2U201L: • Maximum DC reverse voltage: 300 V; • Maximum DC voltage in closed state: 300 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. 11 Screw 300V 30A 40pcs
24595 СНГ
20 грн.
The main technical parameters of the thyristor 2U201I: • Maximum DC reverse voltage: 200 V; • Maximum DC voltage in closed state: 200 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. 11 Screw 200V 30A 40pcs
24601 СНГ
90 грн.
T25-7 Thyristor low-frequency pin design. Thyristors T25-7 are designed to operate in DC and AC circuits of various power electrical installations with a frequency of up to 500 Hz. Are issued in the case with a flexible output. The maximum allowable average direct current in the open state - 25 A Repetitive impulse voltage in the closed state and repetitive impulse reverse voltage - 700 V Cooling air natural or forced. The type designation is given on the case. Dimensions: - total length - 150 mm - hairpin length - 16 mm - thread - M10. 135 Screw 700V 25A 1 PC.
24644 СНГ
15 грн.
Silicon thyristors KU202D1 are planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. 2.1 DIP 100V 10A 50pcs
24660 СНГ
35 грн.
Silicon thyristors 2U202L planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. 11 Screw 300V 10A 40pcs
25132 СНГ
10 грн.
The main technical parameters of the thyristor KU101G: • Maximum DC reverse voltage: 80 V; • Maximum DC voltage in closed state: 80 V; • Maximum repetitive pulse current in the open state: 1 A; • Average pulse current in the open state: 0.075 A; • Voltage in the open state: no more than 2.5 V; • Direct current in the closed state: not less than 0.15 mA; • Constant reverse current: no more than 0.15 mA; • Unlocking direct control current: no more than 12 mA; • Constant unlocking control voltage: 1.5...8 V; • Voltage slew rate in closed state: 100 V/µs; • Turn-on time: 2 ms; • Turn-off time: 35 µs. 2 DIP 100 pieces.
25843 СНГ
10 грн.
• Maximum DC reverse voltage: 25 V; • Maximum DC voltage in closed state: 25 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. 11 Screw 25V 30A 40pcs
25845 СНГ
20 грн.
Continuous maximum reverse voltage 25 V Continuous maximum off-state voltage 25 V Constant pulse current in the open state - 30 A Repetitive on-state surge current 10 A On-state voltage Non-triggering DC control voltage >=0.2 V DC off state Constant reverse current Latching direct current control Constant trigger voltage control Critical off-state slew rate 5 V/µs Turn-on time Shutdown time 11 Screw 25V 10A 30A 40pcs
25846 СНГ
20 грн.
Silicon thyristors KU202V, planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. 11 Screw 50V 10A 40pcs
25847 СНГ
20 грн.
Silicon thyristors KU202K are planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. 11 Screw 300V 10A 40pcs
25854 СНГ
15 грн.
Silicon thyristors KU102V, diffusion, pnpn structures, triode, lockable. Designed for use as low power switching elements. The main technical parameters of the thyristor KU102V: • Maximum DC reverse voltage: 5 V; • Maximum DC voltage in closed state: 150 V; • Maximum repetitive pulse current in the open state: 5 A; • Repetitive pulse current in the open state: 0.05 A; • Voltage in the open state: no more than 2.5 V; • Non-opening constant control voltage: not less than 0.2 V; • Direct current in the closed state: not less than 0.15 mA; • Blocking impulse control current: 20 mA; • Constant unlocking control voltage: 12 V; • Voltage slew rate in closed state: 200 V/µs; • Turn-on time: 5 µs; • Turn-off time: 20 µs • Working range of ambient temperature: -60... +125 °С. 1.2 DIP 150V 5A 100 pieces.
25855 СНГ
8 грн.
Silicon thyristors KU101A, diffusion-alloy, p-type, triode, non-lockable. Designed for use as switching elements. The main technical parameters of the thyristor KU101A: • Maximum DC reverse voltage: 10 V; • Maximum DC voltage in closed state: 50 V; • Maximum repetitive pulse current in the open state: 1 A; • Average pulse current in the open state: 0.075 A; • Voltage in the open state: no more than 2.5 V; • Direct current in the closed state: not less than 0.15 mA; • Constant reverse current: no more than 0.15 mA; • Unlocking direct control current: no more than 12 mA; • Constant unlocking control voltage: 1.5...8 V; • Voltage slew rate in closed state: 100 V/µs; • Turn-on time: 2 ms; • Turn-off time: 35 µs. 1.8 DIP 50V 1A 100 pieces.
25857 СНГ
12 грн.
Silicon thyristors KU101E, diffusion-alloy, p-type, triode, non-lockable. Designed for use as switching elements. The main technical parameters of the thyristor KU101E: • Maximum DC reverse voltage: 150 V; • Maximum DC voltage in closed state: 150 V; • Maximum repetitive pulse current in the open state: 1 A; • Average pulse current in the open state: 0.075 A; • Voltage in the open state: no more than 2.5 V; • Direct current in the closed state: not less than 0.15 mA; • Constant reverse current: no more than 0.15 mA; • Unlocking direct control current: no more than 12 mA; • Constant unlocking control voltage: 1.5...8 V; • Voltage slew rate in closed state: 100 V/µs; • Turn-on time: 2 ms; • Turn-off time: 35 µs. 1.8 DIP 150V 1A 100 pieces.
25872
25 грн.
Designed for use in pulse devices as switching elements. The main technical parameters of the thyristor KN102I: • Maximum DC reverse voltage: 10 V; • Maximum DC voltage in closed state: 50 V; • Maximum repetitive pulse current in the open state: 10 A; • Average pulse current in the open state: 0.2 A; • Voltage in the open state: no more than 1.5 V; • Non-opening constant control voltage: 15 V; • Direct current in the closed state: no more than 0.08 mA; • Constant reverse current: no more than 0.5 mA; • Constant unlocking control voltage: 150 V; • Turn-off time: no more than 40 microseconds.
26015 СНГ
400 грн.
Т142-80-12 Thyristor low-frequency pin design. It is intended for work in converting devices, in circuits of direct and alternating current of various power plants. Are issued in the glass-to-metal case with a rigid output. The maximum allowable average direct current in the open state - 80 A Repetitive impulse voltage in the closed state and repetitive impulse reverse voltage - 1200 V Cooling air natural or forced. The designation of the type rating and the polarity of the terminals are given on the case. Dimensions: - total length - 56 mm - hairpin length - 16 mm - thread - M10 63 Screw 1200V 80A 20pcs
26016 СНГ
35 грн.
Silicon thyristors 2U202M planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. 11 Screw 400V 10A 40pcs
26017 СНГ
22 грн.
Silicon thyristors 2U202D, planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. 11 Screw 100V 10A 40pcs
26018 СНГ
25 грн.
Silicon thyristors 2U202I planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. 11 Screw 200V 10A 40pcs
26504 СНГ
6 грн.
The main technical parameters of the thyristor KU103A1: • Maximum DC voltage in closed state: 150 V; • Repetitive pulse current in the open state: 0.001 A; • Pulse voltage in the open state: no more than 3 V; • Non-opening constant control voltage: 0.001 V; • Direct current in the closed state: not less than 0.15 mA; • Constant reverse current: 1 mA; • Unlocking constant control current: 40 mA; • Constant triggering control voltage: 0.4...2 V. 0.5 DIP 150V 200pcs
26511 СНГ
19 грн.
10+17,10 грн.
50+15,20 грн.
Silicon triac, planar, pnpn structures, triode, non-lockable, symmetrical. 11 Screw 100V 5A 40pcs
26837 СНГ
16 грн.
Symmetrical low-frequency thyristor. Designed for operation in converter devices, as well as in DC and AC circuits of various power plants. The maximum allowable operating current - 10 A Repetitive impulse voltage in the closed state and repetitive impulse reverse voltage - 500 V. 2.1 DIP TO-220 500V 10A 50pcs
28504 СНГ
30 грн.
Silicon thyristors KU202N planar-diffusion, pnpn structures, triode, non-locking. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. 11 Screw 400V 10A 25pcs
28730 СНГ
170 грн.
Thyristor TO125-12.5-10 optocoupler, low-frequency, silicon, diffusion, pnpn structure, flange design. Designed for operation in DC and AC circuits with a frequency of up to 500 Hz and a current of no more than 12.5 A. It consists of a silicon photothyristor and a gallium arsenide emitting diode and has a control circuit connected to the power circuit only by a light beam in the absence of galvanic coupling. 17 DIP 1000V 12.5А 20pcs
29129 СНГ
10 грн.
Silicon thyristors 2U101A, diffusion-alloy, p-type, triode, non-locking. Designed for use as switching elements. Main technical parameters of thyristor 2U101A: • Maximum continuous reverse voltage: 10 V; • Maximum DC voltage in closed state: 50 V; • Maximum repetitive pulse current in open state: 1 A; • Average pulse current in open state: 0.075 A; • Voltage in open state: no more than 2.5 V; • Direct current in closed state: not less than 0.15 mA; • Continuous reverse current: no more than 0.15 mA; • Triggering direct control current: no more than 12 mA; • Constant unlocking control voltage: 1.5...8 V; • Voltage rise rate in closed state: 100 V/μs; • Turn-on time: 2 µs; • Switch-off time: 35 µs. 1.8 DIP 50V 1A 100 pieces.