zener diodes

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Power Factory packaging Stabilization voltage Zener diode housing type
20212 Rectron Semiconductor 1164 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 8.2V 0.5W (BZX55C 8V2) 0.12 DIP 500мВт 500pcs 8V2 DO-35
20214 Rectron Semiconductor 1128 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 10V 0.5W (BZX55C, 10V) 0.12 DIP 500мВт 500pcs 10V DO-35
28263 ON SEMICONDUCTOR 1055 шт
2 грн.
50+1,80 грн.
100+1,60 грн.
250+1,50 грн.
Zener diode MMSZ5V1T1G (U46). 0.12 SMD 500мВт 3000pcs 5V1 SOD-123
20204 Rectron Semiconductor 1013 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 16V 0.5W (BZX55C 16V0) 0.12 DIP 500мВт 500pcs 16V DO-35
27707 СНГ 1001 шт
4 грн.
50+3,60 грн.
100+3,20 грн.
250+3 грн.
The main technical parameters of the KS168V zener diode: • Rated stabilization voltage: 6.8 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: ±0.05%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 28 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. 0.4 DIP 150мВт 1000pcs 6V8 kd25
20205 Rectron Semiconductor 985 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 11V 0.5W (BZX55C 11V) 0.12 DIP 500мВт 500pcs 11V DO-35
24259 СНГ 930 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 47V The main technical parameters of the Zener diode D816D: • Stabilization voltage spread: 42.5... 51.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 15 Ohm; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 110 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С 4.2 Screw 5Вт 100 pieces. 47V ks620
26694 СНГ 927 шт
2 грн.
50+1,80 грн.
100+1,60 грн.
250+1,50 грн.
Zener diodes KS407A silicon, planar, medium power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 1...100 mA. The main technical parameters of the KS407A zener diode: • Rated stabilization voltage: 3.3 V at Ist 20 mA; • Stabilization voltage spread: 3.1... 3.5 V; • Zener diode differential resistance: 28 Ohm at Ist 20 mA; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -40... +85 °С. 0.2 DIP 500мВт 400pcs 3V3 kd2
20210 Rectron Semiconductor 875 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 6.2V 0.5W (BZX55C 6V2) 0.12 DIP 500мВт 500pcs 6V2 DO-35
20446 SEMTECH ELECTRONICS 870 шт
2 грн.
50+1,80 грн.
100+1,60 грн.
250+1,50 грн.
0.2 DIP 1Вт 500pcs 12V DO-41
29244 ST MICROELECTRONICS 864 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode ZMM5V1 Mini-MELF 5V1 0.5W 0.2 SMD 500мВт 2500pcs 5V1 MiniMELF
22386 СНГ 796 шт
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Silicon zener diode, diffusion-alloy, low power. 0.2 DIP 125мВт 1000pcs 3V9 kd-4
20222 Rectron Semiconductor 777 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 22V 0.5W (BZX55C 22V) 0.12 DIP 500мВт 500pcs 22V DO-35
26693 СНГ 771 шт
2 грн.
50+1,80 грн.
100+1,60 грн.
250+1,50 грн.
Zener diodes KS508A silicon, planar, medium power. Designed to stabilize the nominal voltage of 12.0 V in the stabilization current range of 0.25...23.0 mA. The main technical parameters of the KS508A zener diode: • Rated stabilization voltage: 12 V at Ist 10.5 mA; • Temperature coefficient of stabilization voltage: ±0.11%/°С; • Minimum allowable stabilization current: 0.25 mA; • Maximum allowable stabilization current: 23 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +85 °С. 0.2 DIP 500мВт 400pcs 12V kd2
20230 Rectron Semiconductor 681 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 3.6V 0.5W (BZX55C 3V6) 0.12 DIP 500мВт 500pcs 3V6 DO-35
23499 Rectron Semiconductor 661 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode BZV55C12V SOD-80 12V 0.5W 0.2 SMD 500мВт 2500pcs 12V SOD-80
26123 СНГ 641 шт
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Zener diodes D814V silicon, alloy, medium power. Designed to stabilize the voltage of 9.0-10.5 V in the stabilization current range of 3...32 mA. 0.8 DIP 340мВт 500pcs 10V kd-8
21837 СНГ 618 шт
2.50 грн.
50+2,25 грн.
100+2 грн.
250+1,87 грн.
Zener diode R=0.125W U=24V at Ist=2mA 0.2 DIP 125мВт 1000pcs 24V kd2
24257 СНГ 617 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 27V The main technical parameters of the Zener diode D816B: • Stabilization voltage spread: 24.2... 29.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 8 ohms; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 180 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С 2.5 Screw 5Вт 100 pieces. 27V ks620
26197 СНГ 579 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 6.8V The main technical parameters of the Zener diode D815B: • Stabilization voltage spread: 6.1... 7.5 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.05%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.8 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.15 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С 2.5 Screw 8Вт 100 pieces. 6V8 ks620
26193 СНГ 568 шт
7 грн.
50+6,30 грн.
100+5,60 грн.
250+5,25 грн.
Medium power silicon zener diode, 180V The main technical parameters of the D815Zh zener diode: • Stabilization voltage spread: 16.2... 19.8 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.11%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 3 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 450 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С 2.5 Screw 8Вт 100 pieces. 18V ks620
24251 СНГ 565 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 56V The main technical parameters of the Zener diode D817A: • Stabilization voltage spread: 50.5... 61.5 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 35 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 90 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С 3.5 Screw 5Вт 100 pieces. 56V ks620
23542 СНГ 561 шт
4 грн.
50+3,60 грн.
100+3,20 грн.
250+3 грн.
Zener diodes KS433A silicon, diffusion-alloy, medium power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 3...191 mA. The main technical parameters of the KS433A zener diode: • Rated stabilization voltage: 3.3 V at Ist 30 mA; • Stabilization voltage spread: 2.97... 3.63 V; • Temperature coefficient of stabilization voltage: -0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 25 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 191 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С 0.7 DIP 1Вт 500pcs 3V3 kd-8
25955 СНГ 525 шт
7 грн.
50+6,30 грн.
100+5,60 грн.
250+5,25 грн.
Medium power silicon zener diode, 12V The main technical parameters of the Zener diode D815D: • Stabilization voltage spread: 10.8... 13.3 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.09%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 2 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 650 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Working range of ambient temperature: -60... +125 °С. 4.2 Screw 8Вт 100 pieces. 12V ks620
23078 ON SEMICONDUCTOR 500 шт
4 грн.
50+3,60 грн.
100+3,20 грн.
250+3 грн.
1 DIP 5Вт 500pcs 12V do201
26195 СНГ 490 шт
8 грн.
50+7,20 грн.
100+6,40 грн.
250+6 грн.
Medium power silicon zener diode, 27V The main technical parameters of the Zener diode D816B: • Stabilization voltage spread: 24.2... 29.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 8 ohms; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 180 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С 2.5 Screw 5Вт 100 pieces. 27V ks620
26144 СНГ 487 шт
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
The main technical parameters of the Zener diode D818A: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 9... 11 V; • Temperature coefficient of stabilization voltage: 0... +0.023%/°С; • Temporary instability of stabilization voltage: ± 0.11%; • Zener diode differential resistance: 70 Ohm at Ist 3 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Ambient temperature operating range: -60... +125 °С 0.8 DIP 300мВт 200pcs 9V kd-8
20202 Rectron Semiconductor 447 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 4.3V 0.5W (BZX55C 4V3) 0.12 DIP 500мВт 500pcs 4V3 DO-35
24465 СНГ 426 шт
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Dissipation power, W 0.15 Rated stabilization voltage, V 10 Static resistance Rst., Ohm 22 Hole mounting method Minimum stabilization voltage, V 9.3 Maximum stabilization voltage, V 11 Temperature coefficient of stabilization voltage aUst.,% /С 0.07 Temporary instability of stabilization voltage dUst., V 1.5 Minimum stabilization current Ist.min., mA 3 Maximum stabilization current Ist.max., mA 14 Operating temperature, С -60...125 0.3 DIP 150мВт 100 pieces. 10V kd25
21812 FAIRCHILD SEMICONDUCTOR 401 шт
2 грн.
50+1,80 грн.
100+1,60 грн.
250+1,50 грн.
0.2 DIP 1Вт 1000pcs 10V DO-41