zener diodes
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| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Mounting type | Power | Factory packaging | Stabilization voltage | Zener diode housing type |
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Zener diode BZX55C 8V2
#4198
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20212 | Rectron Semiconductor | 1164 шт |
1 грн.
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Zener diode 8.2V 0.5W (BZX55C 8V2) | 0.12 | DIP | 500мВт | 500pcs | 8V2 | DO-35 | ||||||||
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Zener diode BZX55C 10V
#4200
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20214 | Rectron Semiconductor | 1128 шт |
1 грн.
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Zener diode 10V 0.5W (BZX55C, 10V) | 0.12 | DIP | 500мВт | 500pcs | 10V | DO-35 | ||||||||
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Zener diode MMSZ5V1T1G (U46)
#16026
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28263 | ON SEMICONDUCTOR | 1055 шт |
2 грн.
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Zener diode MMSZ5V1T1G (U46). | 0.12 | SMD | 500мВт | 3000pcs | 5V1 | SOD-123 | ||||||||
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Zener diode BZX55C 16V
#4218
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20204 | Rectron Semiconductor | 1013 шт |
1 грн.
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Zener diode 16V 0.5W (BZX55C 16V0) | 0.12 | DIP | 500мВт | 500pcs | 16V | DO-35 | ||||||||
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Zener diode KS168V
#15468
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27707 | СНГ | 1001 шт |
4 грн.
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The main technical parameters of the KS168V zener diode: • Rated stabilization voltage: 6.8 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: ±0.05%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 28 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. | 0.4 | DIP | 150мВт | 1000pcs | 6V8 | kd25 | ||||||||
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Zener diode BZX55C 11V
#4201
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20205 | Rectron Semiconductor | 985 шт |
1 грн.
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Zener diode 11V 0.5W (BZX55C 11V) | 0.12 | DIP | 500мВт | 500pcs | 11V | DO-35 | ||||||||
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Zener diode D816D
#11970
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24259 | СНГ | 930 шт |
6 грн.
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Medium power silicon zener diode, 47V The main technical parameters of the Zener diode D816D: • Stabilization voltage spread: 42.5... 51.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 15 Ohm; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 110 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 4.2 | Screw | 5Вт | 100 pieces. | 47V | ks620 | ||||||||
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Zener diode KS407A
#14482
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26694 | СНГ | 927 шт |
2 грн.
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Zener diodes KS407A silicon, planar, medium power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 1...100 mA. The main technical parameters of the KS407A zener diode: • Rated stabilization voltage: 3.3 V at Ist 20 mA; • Stabilization voltage spread: 3.1... 3.5 V; • Zener diode differential resistance: 28 Ohm at Ist 20 mA; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -40... +85 °С. | 0.2 | DIP | 500мВт | 400pcs | 3V3 | kd2 | ||||||||
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Zener diode BZX55C 6V2
#4194
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20210 | Rectron Semiconductor | 875 шт |
1 грн.
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Zener diode 6.2V 0.5W (BZX55C 6V2) | 0.12 | DIP | 500мВт | 500pcs | 6V2 | DO-35 | ||||||||
| 20446 | SEMTECH ELECTRONICS | 870 шт |
2 грн.
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0.2 | DIP | 1Вт | 500pcs | 12V | DO-41 | ||||||||||
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Zener diode ZMM5V1
#16994
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29244 | ST MICROELECTRONICS | 864 шт |
1 грн.
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Zener diode ZMM5V1 Mini-MELF 5V1 0.5W | 0.2 | SMD | 500мВт | 2500pcs | 5V1 | MiniMELF | ||||||||
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Zener diode KS139G
#10379
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22386 | СНГ | 796 шт |
3 грн.
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Silicon zener diode, diffusion-alloy, low power. | 0.2 | DIP | 125мВт | 1000pcs | 3V9 | kd-4 | ||||||||
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Zener diode BZX55C 22V
#4207
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20222 | Rectron Semiconductor | 777 шт |
1 грн.
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Zener diode 22V 0.5W (BZX55C 22V) | 0.12 | DIP | 500мВт | 500pcs | 22V | DO-35 | ||||||||
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Zener diode KS508A
#14481
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26693 | СНГ | 771 шт |
2 грн.
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Zener diodes KS508A silicon, planar, medium power. Designed to stabilize the nominal voltage of 12.0 V in the stabilization current range of 0.25...23.0 mA. The main technical parameters of the KS508A zener diode: • Rated stabilization voltage: 12 V at Ist 10.5 mA; • Temperature coefficient of stabilization voltage: ±0.11%/°С; • Minimum allowable stabilization current: 0.25 mA; • Maximum allowable stabilization current: 23 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +85 °С. | 0.2 | DIP | 500мВт | 400pcs | 12V | kd2 | ||||||||
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Zener diode BZX55C 3V6
#4188
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20230 | Rectron Semiconductor | 681 шт |
1 грн.
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Zener diode 3.6V 0.5W (BZX55C 3V6) | 0.12 | DIP | 500мВт | 500pcs | 3V6 | DO-35 | ||||||||
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Zener diode BZV55C12V
#11388
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23499 | Rectron Semiconductor | 661 шт |
1 грн.
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Zener diode BZV55C12V SOD-80 12V 0.5W | 0.2 | SMD | 500мВт | 2500pcs | 12V | SOD-80 | ||||||||
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Zener diode D814V
#13944
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26123 | СНГ | 641 шт |
3 грн.
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Zener diodes D814V silicon, alloy, medium power. Designed to stabilize the voltage of 9.0-10.5 V in the stabilization current range of 3...32 mA. | 0.8 | DIP | 340мВт | 500pcs | 10V | kd-8 | ||||||||
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Zener diode KS224Zh
#10099
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21837 | СНГ | 618 шт |
2.50 грн.
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Zener diode R=0.125W U=24V at Ist=2mA | 0.2 | DIP | 125мВт | 1000pcs | 24V | kd2 | ||||||||
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Zener diode D816B
#11968
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24257 | СНГ | 617 шт |
6 грн.
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Medium power silicon zener diode, 27V The main technical parameters of the Zener diode D816B: • Stabilization voltage spread: 24.2... 29.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 8 ohms; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 180 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 2.5 | Screw | 5Вт | 100 pieces. | 27V | ks620 | ||||||||
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Zener diode D815B
#14018
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26197 | СНГ | 579 шт |
6 грн.
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Medium power silicon zener diode, 6.8V The main technical parameters of the Zener diode D815B: • Stabilization voltage spread: 6.1... 7.5 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.05%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.8 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.15 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | Screw | 8Вт | 100 pieces. | 6V8 | ks620 | ||||||||
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Zener diode D815Zh
#14014
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26193 | СНГ | 568 шт |
7 грн.
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Medium power silicon zener diode, 180V The main technical parameters of the D815Zh zener diode: • Stabilization voltage spread: 16.2... 19.8 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.11%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 3 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 450 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | Screw | 8Вт | 100 pieces. | 18V | ks620 | ||||||||
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Zener diode D817A
#11962
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24251 | СНГ | 565 шт |
6 грн.
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Medium power silicon zener diode, 56V The main technical parameters of the Zener diode D817A: • Stabilization voltage spread: 50.5... 61.5 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 35 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 90 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 3.5 | Screw | 5Вт | 100 pieces. | 56V | ks620 | ||||||||
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Zener diode KS433A
#11425
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23542 | СНГ | 561 шт |
4 грн.
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Zener diodes KS433A silicon, diffusion-alloy, medium power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 3...191 mA. The main technical parameters of the KS433A zener diode: • Rated stabilization voltage: 3.3 V at Ist 30 mA; • Stabilization voltage spread: 2.97... 3.63 V; • Temperature coefficient of stabilization voltage: -0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 25 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 191 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С | 0.7 | DIP | 1Вт | 500pcs | 3V3 | kd-8 | ||||||||
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Zener diode D815D
#13776
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25955 | СНГ | 525 шт |
7 грн.
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Medium power silicon zener diode, 12V The main technical parameters of the Zener diode D815D: • Stabilization voltage spread: 10.8... 13.3 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.09%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 2 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 650 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Working range of ambient temperature: -60... +125 °С. | 4.2 | Screw | 8Вт | 100 pieces. | 12V | ks620 | ||||||||
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Zener diode 1N5349B(12V)
#11059
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23078 | ON SEMICONDUCTOR | 500 шт |
4 грн.
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1 | DIP | 5Вт | 500pcs | 12V | do201 | |||||||||
| 26195 | СНГ | 490 шт |
8 грн.
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Medium power silicon zener diode, 27V The main technical parameters of the Zener diode D816B: • Stabilization voltage spread: 24.2... 29.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 8 ohms; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 180 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 2.5 | Screw | 5Вт | 100 pieces. | 27V | ks620 | |||||||||
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Zener diode D818A
#13964
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26144 | СНГ | 487 шт |
3 грн.
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The main technical parameters of the Zener diode D818A: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 9... 11 V; • Temperature coefficient of stabilization voltage: 0... +0.023%/°С; • Temporary instability of stabilization voltage: ± 0.11%; • Zener diode differential resistance: 70 Ohm at Ist 3 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Ambient temperature operating range: -60... +125 °С | 0.8 | DIP | 300мВт | 200pcs | 9V | kd-8 | ||||||||
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Zener diode BZX55C 4V3
#4190
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20202 | Rectron Semiconductor | 447 шт |
1 грн.
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Zener diode 4.3V 0.5W (BZX55C 4V3) | 0.12 | DIP | 500мВт | 500pcs | 4V3 | DO-35 | ||||||||
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Zener diode KS210B
#3415
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24465 | СНГ | 426 шт |
3 грн.
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Dissipation power, W 0.15 Rated stabilization voltage, V 10 Static resistance Rst., Ohm 22 Hole mounting method Minimum stabilization voltage, V 9.3 Maximum stabilization voltage, V 11 Temperature coefficient of stabilization voltage aUst.,% /С 0.07 Temporary instability of stabilization voltage dUst., V 1.5 Minimum stabilization current Ist.min., mA 3 Maximum stabilization current Ist.max., mA 14 Operating temperature, С -60...125 | 0.3 | DIP | 150мВт | 100 pieces. | 10V | kd25 | ||||||||
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Zener diode BZX85C10V
#10075
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21812 | FAIRCHILD SEMICONDUCTOR | 401 шт |
2 грн.
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0.2 | DIP | 1Вт | 1000pcs | 10V | DO-41 |