zener diodes

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Power Factory packaging Stabilization voltage Zener diode housing type
23088 ON SEMICONDUCTOR
3.80 грн.
50+3,42 грн.
100+3,04 грн.
250+2,85 грн.
1 DIP 5Вт 500pcs 36V do201
23089 ON SEMICONDUCTOR
3.80 грн.
50+3,42 грн.
100+3,04 грн.
250+2,85 грн.
1 DIP 5Вт 500pcs 39V do201
23090 SEMIKRON
6.50 грн.
50+5,85 грн.
100+5,20 грн.
250+4,87 грн.
1 DIP 5Вт 500pcs 43V do201
23091 ON SEMICONDUCTOR
3.80 грн.
50+3,42 грн.
100+3,04 грн.
250+2,85 грн.
1 DIP 5Вт 500pcs 47V do201
23092 ON SEMICONDUCTOR
3.80 грн.
50+3,42 грн.
100+3,04 грн.
250+2,85 грн.
1 DIP 5Вт 500pcs 51V do201
23096 ON SEMICONDUCTOR
6.80 грн.
50+6,12 грн.
100+5,44 грн.
250+5,10 грн.
1 DIP 5Вт 500pcs 82V do201
23097 ON SEMICONDUCTOR
4.40 грн.
50+3,96 грн.
100+3,52 грн.
250+3,30 грн.
1 DIP 5Вт 500pcs 91V do201
23098 ON SEMICONDUCTOR
5.40 грн.
50+4,86 грн.
100+4,32 грн.
250+4,05 грн.
1 DIP 5Вт 500pcs 100V do201
23099 ON SEMICONDUCTOR
3.80 грн.
50+3,42 грн.
100+3,04 грн.
250+2,85 грн.
1 DIP 5Вт 500pcs 120V do201
23100 ON SEMICONDUCTOR
4.40 грн.
50+3,96 грн.
100+3,52 грн.
250+3,30 грн.
1 DIP 5Вт 500pcs 140V do201
ON SEMICONDUCTOR
4.80 грн.
50+4,32 грн.
100+3,84 грн.
250+3,60 грн.
1 DIP 5Вт 500pcs 160V do201
23101 ON SEMICONDUCTOR
5.10 грн.
50+4,59 грн.
100+4,08 грн.
250+3,82 грн.
1 DIP 5Вт 500pcs 170V do201
ON SEMICONDUCTOR
3.80 грн.
50+3,42 грн.
100+3,04 грн.
250+2,85 грн.
1 DIP 5Вт 500pcs 200V do201
23496 PHILIPS
2 грн.
50+1,80 грн.
100+1,60 грн.
250+1,50 грн.
0.3 DIP 1.3Вт 5000pcs 12V DO-41
23498 СНГ
1.50 грн.
50+1,35 грн.
100+1,20 грн.
250+1,12 грн.
Zener diodes D814G1 silicon, medium power. Designed to stabilize the voltage of 10.0-12.0 V. Are issued in the glass case with flexible conclusions. 0.2 DIP 340мВт 500pcs 11V kd2
23510 СНГ
15 грн.
50+13,50 грн.
100+12 грн.
250+11,25 грн.
Main technical parameters of stabistor 2S119A: • Rated stabilization voltage: 1.9 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.42...-0.2%/°C; • Differential resistance: 15 Ohm at Ist 10 mA; • Minimum permissible stabilization current: 1 mA; • Maximum permissible stabilization current: 100 mA; • Maximum permissible power dissipation: 0.18 W; • Operating range of ambient temperature: -60... +125 °C. 0.8 DIP 180мВт 100 pieces. 1V9 kd-8
23511 СНГ
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Zener diodes 2S510A silicon, planar, medium power. Designed to stabilize the rated voltage of 10 V in the stabilization current range of 1...79 mA. 0.8 DIP 1Вт 100 pieces. 10V kd-8
23513 СНГ
7 грн.
50+6,30 грн.
100+5,60 грн.
250+5,25 грн.
Zener diodes 2S920A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 120 V in the stabilization current range of 5...42 mA. 4.2 Screw 5Вт 100 pieces. 120V ks620
23535 СНГ
1.50 грн.
50+1,35 грн.
100+1,20 грн.
250+1,12 грн.
• Rated stabilization voltage: 0.7 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.3%/°С; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Working range of ambient temperature: -60... +125 °С. 0.2 DIP 125мВт 300pcs 0.7V kd2
23536 СНГ
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Silicon zener diodes, diffusion-alloy, medium power, precision. 0.8 DIP 720мВт 80pcs 82V
23537 СНГ
12 грн.
50+10,80 грн.
100+9,60 грн.
250+9 грн.
Zener diodes KS630A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 130 V in the stabilization current range of 5...38 mA. 3 Screw 5Вт 100 pieces. 130V ks620
23543 СНГ
2 грн.
50+1,80 грн.
100+1,60 грн.
250+1,50 грн.
Silicon zener diode, planar, medium power. The main technical parameters of the KS407G zener diode: • Rated stabilization voltage: 5.1 V at Ist 20 mA; • Stabilization voltage spread: 4.8... 5.4 V; • Zener diode differential resistance: 17 Ohm at Ist 20 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 59 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -40... +85 °С. 0.1 DIP 500мВт 400pcs 5V1 kd2
23797 СНГ
5 грн.
50+4,50 грн.
100+4 грн.
250+3,75 грн.
7GE2A-K selenium stabistor Ust=1.3-1.6V, Ist.=1mA. 0.7 DIP 100 pieces. 1V45
24136 СНГ
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 10V The main technical parameters of the Zener diode D815G: • Stabilization voltage spread: 9... 11 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.08%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 1.8 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 800 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Working range of ambient temperature: -60... +125 °С. 4.2 Screw 8Вт 100 pieces. 10V ks620
24620 СНГ
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Zener diodes D814D silicon, alloy, medium power. Designed to stabilize the voltage of 11.5-14.0 V in the stabilization current range of 3...24 mA. Are issued in the glass-to-metal case with flexible conclusions. The type of zener diode is given on the housing. 0.8 DIP 340мВт 200pcs 13V
24621 СНГ
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Zener diodes 2S133A silicon, alloy, low power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 3...81 mA. 0.8 DIP 300мВт 200pcs 3V3
24624 СНГ
4 грн.
50+3,60 грн.
100+3,20 грн.
250+3 грн.
Zener diodes 2S168A silicon, alloy, low power. Designed to stabilize the nominal voltage of 6.8 V in the stabilization current range of 3...45 mA. 0.2 DIP 300мВт 500pcs 6V8
24625 СНГ
40 грн.
50+36 грн.
100+32 грн.
250+30 грн.
Zener diodes 2S156A silicon, alloy, low power. Designed to stabilize the nominal voltage of 5.6 V in the stabilization current range of 3...55 mA. Are issued in the glass case with flexible conclusions. 0.8 DIP 300мВт 100 pieces. 5V6
24626 СНГ
20 грн.
50+18 грн.
100+16 грн.
250+15 грн.
The main technical parameters of the Zener diode D818D: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.002%/°C; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. 0.8 DIP 300мВт 100 pieces. 9V kd-8
24683 СНГ
25 грн.
50+22,50 грн.
100+20 грн.
250+18,75 грн.
The main technical parameters of the Zener diode D818E: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 8.1... 8.9 V; • Temperature coefficient of stabilization voltage: +0.001%/°C; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. 0.8 DIP 300мВт 100 pieces. 9V kd-8