zener diodes
Filter layout:
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| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Mounting type | Power | Factory packaging | Stabilization voltage | Zener diode housing type |
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Zener diode 1N5365B(36V)
#11071
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23088 | ON SEMICONDUCTOR | — |
3.80 грн.
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— | 1 | DIP | 5Вт | 500pcs | 36V | do201 | ||||||||
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Zener diode 1N5366B(39V)
#11072
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23089 | ON SEMICONDUCTOR | — |
3.80 грн.
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— | 1 | DIP | 5Вт | 500pcs | 39V | do201 | ||||||||
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Zener diode 1N5367B(43V)
#11073
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23090 | SEMIKRON | — |
6.50 грн.
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— | 1 | DIP | 5Вт | 500pcs | 43V | do201 | ||||||||
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Zener diode 1N5368B(47V)
#11074
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23091 | ON SEMICONDUCTOR | — |
3.80 грн.
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— | 1 | DIP | 5Вт | 500pcs | 47V | do201 | ||||||||
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Zener diode 1N5369B(51V)
#11075
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23092 | ON SEMICONDUCTOR | — |
3.80 грн.
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— | 1 | DIP | 5Вт | 500pcs | 51V | do201 | ||||||||
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Zener diode 1N5375B(82V)
#11080
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23096 | ON SEMICONDUCTOR | — |
6.80 грн.
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— | 1 | DIP | 5Вт | 500pcs | 82V | do201 | ||||||||
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Zener diode 1N5377B(91V)
#11081
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23097 | ON SEMICONDUCTOR | — |
4.40 грн.
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— | 1 | DIP | 5Вт | 500pcs | 91V | do201 | ||||||||
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Zener diode 1N5378B(100V)
#11082
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23098 | ON SEMICONDUCTOR | — |
5.40 грн.
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— | 1 | DIP | 5Вт | 500pcs | 100V | do201 | ||||||||
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Zener diode 1N5380B(120V)
#11083
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23099 | ON SEMICONDUCTOR | — |
3.80 грн.
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— | 1 | DIP | 5Вт | 500pcs | 120V | do201 | ||||||||
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Zener diode 1N5382B(140V)
#11084
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23100 | ON SEMICONDUCTOR | — |
4.40 грн.
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— | 1 | DIP | 5Вт | 500pcs | 140V | do201 | ||||||||
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Zener diode 1N5384B(160V)
#11085
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— | ON SEMICONDUCTOR | — |
4.80 грн.
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— | 1 | DIP | 5Вт | 500pcs | 160V | do201 | ||||||||
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Zener diode 1N5385B(170V)
#11086
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23101 | ON SEMICONDUCTOR | — |
5.10 грн.
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— | 1 | DIP | 5Вт | 500pcs | 170V | do201 | ||||||||
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Zener diode 1N5388B(200V)
#11087
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— | ON SEMICONDUCTOR | — |
3.80 грн.
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— | 1 | DIP | 5Вт | 500pcs | 200V | do201 | ||||||||
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Zener diode BZV85-C12V
#11385
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23496 | PHILIPS | — |
2 грн.
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— | 0.3 | DIP | 1.3Вт | 5000pcs | 12V | DO-41 | ||||||||
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Zener diode D814G1
#11387
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23498 | СНГ | — |
1.50 грн.
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— | Zener diodes D814G1 silicon, medium power. Designed to stabilize the voltage of 10.0-12.0 V. Are issued in the glass case with flexible conclusions. | 0.2 | DIP | 340мВт | 500pcs | 11V | kd2 | |||||||
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Zener diode 2S119A (=KS119A)
#11399
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23510 | СНГ | — |
15 грн.
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— | Main technical parameters of stabistor 2S119A: • Rated stabilization voltage: 1.9 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.42...-0.2%/°C; • Differential resistance: 15 Ohm at Ist 10 mA; • Minimum permissible stabilization current: 1 mA; • Maximum permissible stabilization current: 100 mA; • Maximum permissible power dissipation: 0.18 W; • Operating range of ambient temperature: -60... +125 °C. | 0.8 | DIP | 180мВт | 100 pieces. | 1V9 | kd-8 | |||||||
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Zener diode 2S510A (=KS510A)
#11400
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23511 | СНГ | — |
6 грн.
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— | Zener diodes 2S510A silicon, planar, medium power. Designed to stabilize the rated voltage of 10 V in the stabilization current range of 1...79 mA. | 0.8 | DIP | 1Вт | 100 pieces. | 10V | kd-8 | |||||||
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Zener diode 2S920A (=KS920A)
#11402
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23513 | СНГ | — |
7 грн.
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— | Zener diodes 2S920A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 120 V in the stabilization current range of 5...42 mA. | 4.2 | Screw | 5Вт | 100 pieces. | 120V | ks620 | |||||||
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Zener diode KS107A stack.
#11418
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23535 | СНГ | — |
1.50 грн.
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— | • Rated stabilization voltage: 0.7 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.3%/°С; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Working range of ambient temperature: -60... +125 °С. | 0.2 | DIP | 125мВт | 300pcs | 0.7V | kd2 | |||||||
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Zener diode KS582G
#11419
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23536 | СНГ | — |
6 грн.
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— | Silicon zener diodes, diffusion-alloy, medium power, precision. | 0.8 | DIP | 720мВт | 80pcs | 82V | — | |||||||
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Zener diode KS630A
#11420
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23537 | СНГ | — |
12 грн.
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— | Zener diodes KS630A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 130 V in the stabilization current range of 5...38 mA. | 3 | Screw | 5Вт | 100 pieces. | 130V | ks620 | |||||||
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Zener diode KS407G
#11426
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23543 | СНГ | — |
2 грн.
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— | Silicon zener diode, planar, medium power. The main technical parameters of the KS407G zener diode: • Rated stabilization voltage: 5.1 V at Ist 20 mA; • Stabilization voltage spread: 4.8... 5.4 V; • Zener diode differential resistance: 17 Ohm at Ist 20 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 59 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -40... +85 °С. | 0.1 | DIP | 500мВт | 400pcs | 5V1 | kd2 | |||||||
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7GE2A-K selenium stabistor
#11560
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23797 | СНГ | — |
5 грн.
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— | 7GE2A-K selenium stabistor Ust=1.3-1.6V, Ist.=1mA. | 0.7 | DIP | — | 100 pieces. | 1V45 | — | |||||||
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Zener diode D815G
#11883
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24136 | СНГ | — |
6 грн.
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— | Medium power silicon zener diode, 10V The main technical parameters of the Zener diode D815G: • Stabilization voltage spread: 9... 11 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.08%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 1.8 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 800 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Working range of ambient temperature: -60... +125 °С. | 4.2 | Screw | 8Вт | 100 pieces. | 10V | ks620 | |||||||
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Zener diode D814D
#12240
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24620 | СНГ | — |
3 грн.
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— | Zener diodes D814D silicon, alloy, medium power. Designed to stabilize the voltage of 11.5-14.0 V in the stabilization current range of 3...24 mA. Are issued in the glass-to-metal case with flexible conclusions. The type of zener diode is given on the housing. | 0.8 | DIP | 340мВт | 200pcs | 13V | — | |||||||
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Zener diode 2S133A (=KS133A)
#12241
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24621 | СНГ | — |
6 грн.
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— | Zener diodes 2S133A silicon, alloy, low power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 3...81 mA. | 0.8 | DIP | 300мВт | 200pcs | 3V3 | — | |||||||
| 24624 | СНГ | — |
4 грн.
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— | Zener diodes 2S168A silicon, alloy, low power. Designed to stabilize the nominal voltage of 6.8 V in the stabilization current range of 3...45 mA. | 0.2 | DIP | 300мВт | 500pcs | 6V8 | — | ||||||||
| 24625 | СНГ | — |
40 грн.
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— | Zener diodes 2S156A silicon, alloy, low power. Designed to stabilize the nominal voltage of 5.6 V in the stabilization current range of 3...55 mA. Are issued in the glass case with flexible conclusions. | 0.8 | DIP | 300мВт | 100 pieces. | 5V6 | — | ||||||||
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Zener diode D818D
#12244
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24626 | СНГ | — |
20 грн.
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— | The main technical parameters of the Zener diode D818D: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.002%/°C; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | DIP | 300мВт | 100 pieces. | 9V | kd-8 | |||||||
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Zener diode D818E
#12333
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24683 | СНГ | — |
25 грн.
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— | The main technical parameters of the Zener diode D818E: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 8.1... 8.9 V; • Temperature coefficient of stabilization voltage: +0.001%/°C; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | DIP | 300мВт | 100 pieces. | 9V | kd-8 |