Transistor 2T831V
| Manufacturer | СНГ |
| SKU | |
| Categories | Domestic transistors |
Features
| Type | Description | |
|---|---|---|
| Brand name | СНГ | |
| Structure | NPN | |
| Transistor type | Bipolar | |
| Power | 1Вт | |
| Transistor case type | TO39 | |
| Mounting type | DIP | |
| Weight g. | 1 | |
| Factory packaging | 100 pieces. | |
| Collector-emitter voltage | 70В | |
| Collector current | 2А | |
| Current gain | 25 | |
| Frequency | 4МГц |
Description
Main technical characteristics of the 2T831V transistor:
• Transistor structure: npn;
• Ркт max - Constant power dissipation of the collector with heat sink: 5 W;
• fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 4 MHz;
• Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 80 V;
• Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V;
• Iк max - Maximum permissible direct collector current: 2 A;
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 25;
• Rke us - Saturation resistance between collector and emitter: no more than 0.6 Ohm.