Transistor GT308V

Transistors GT308V germanium diffusion-alloy structures pnp universal.
Designed for use in oscillators, power amplifiers, pulse devices.

The main technical characteristics of the GT308V transistor:
• Structure: pnp
• Рк max - Constant power dissipation of the collector: 150 mW;
• Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 120 MHz;
• Ukbo - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 20 V;
• Uebo - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 3 V;
• Ik max - Maximum allowable DC collector current: 50 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 80...150 (1V; 10mA);
• Sk - Collector junction capacity: no more than 8 (5V);
• Rke us - Saturation resistance between collector and emitter: no more than 24 Ohm;
• Ksh - Transistor noise factor: no more than 8 dB (1.6 MHz);
• tk - Time constant of the feedback circuit at high frequency: no more than 400 ps.