Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Pin type Rated capacity, μF Working voltage, V Rated capacity tolerance,% Working temperature, С Case diameter D, mm Body length L, mm Transistor type Mounting type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Capacity Resistance Resistor power Accuracy Resistor housing type Working current, A Number of windings Plug or socket Number of contacts Mechanical installation Type Appointment Series Inductance
23899 СНГ 212 шт
6.10 грн.
50+5,49 грн.
200+4,88 грн.
K53-1A oxide-semiconductor polar capacitors, sealed in a metal case. Designed for operation in DC and pulsating current circuits. 0.7 Flexible Leads 3,3 16 10 -60...+125 3 8 DIP 100 pieces.
23898 СНГ 509 шт
6.10 грн.
50+5,49 грн.
200+4,88 грн.
K53-1A oxide-semiconductor polar capacitors, sealed in a metal case. Designed for operation in DC and pulsating current circuits. 0.7 Flexible Leads 3,3 16 30 -60...+125 3 8 DIP 100 pieces.
23897 СНГ 2719 шт
6.10 грн.
50+5,49 грн.
200+4,88 грн.
K53-1A oxide-semiconductor polar capacitors, sealed in a metal case. Designed for operation in DC and pulsating current circuits. 0.7 Flexible Leads 3,3 16 20 -60...+125 3 8 DIP 100 pieces.
23896 СНГ 1417 шт
4.60 грн.
50+4,14 грн.
200+3,68 грн.
Niobium oxide-semiconductor capacitors K53-4, polar, sealed in a metal case. Designed for operation in DC and pulsating current circuits. Features of K53-4 series capacitors: low and stable leakage currents, high values of specific capacitance, improved temperature-frequency characteristics of capacitance and dielectric loss tangent. 0.7 Flexible Leads 1 6.3 20 -60..+85 3 8 DIP 100 pieces.
23895 СНГ 2511 шт
6.10 грн.
50+5,49 грн.
200+4,88 грн.
K53-1A oxide-semiconductor polar capacitors, sealed in a metal case. Designed for operation in DC and pulsating current circuits. 0.7 Flexible Leads 3,3 6.3 30 -60...+125 3 8 DIP 100 pieces.
23894 СНГ 187 шт
6.10 грн.
50+5,49 грн.
200+4,88 грн.
K53-1A oxide-semiconductor polar capacitors, sealed in a metal case. Designed for operation in DC and pulsating current circuits. 0.7 Flexible Leads 3,3 6.3 10 -60...+125 3 8 DIP 100 pieces.
23893 СНГ 498 шт
6.10 грн.
50+5,49 грн.
200+4,88 грн.
K53-1A oxide-semiconductor polar capacitors, sealed in a metal case. Designed for operation in DC and pulsating current circuits. 0.7 Flexible Leads 3,3 6.3 20 -60...+125 3 8 DIP 100 pieces.
23892 СНГ 8193 шт
4.80 грн.
50+4,32 грн.
200+3,84 грн.
Niobium oxide-semiconductor capacitors K53-4, polar, sealed in a metal case. Designed for operation in DC and pulsating current circuits. Features of K53-4 series capacitors: low and stable leakage currents, high values of specific capacitance, improved temperature-frequency characteristics of capacitance and dielectric loss tangent. 0.7 Flexible Leads 1 16 30 -60..+85 3 8 DIP 100 pieces.
23891 СНГ 3936 шт
6.10 грн.
50+5,49 грн.
200+4,88 грн.
K53-1A oxide-semiconductor polar capacitors, sealed in a metal case. Designed for operation in DC and pulsating current circuits. 0.7 Flexible Leads 1 20 10 -60...+125 3 8 DIP 100 pieces.
23890 СНГ 2989 шт
6.10 грн.
50+5,49 грн.
200+4,88 грн.
K53-1A oxide-semiconductor polar capacitors, sealed in a metal case. Designed for operation in DC and pulsating current circuits. 0.7 Flexible Leads 1 20 20 -60...+125 3 8 DIP 100 pieces.
23889 СНГ 1415 шт
6 грн.
50+5,40 грн.
200+4,80 грн.
Niobium oxide semiconductor capacitors K53-4A, polar, sealed in a metal case. Designed for operation in DC and pulsating current circuits. Features of K53-4A series capacitors: low and stable leakage currents, high values of specific capacitance, improved temperature-frequency characteristics of capacitance and dielectric loss tangent. 1.5 Flexible Leads 22 6.3 20 -60..+85 4 13 DIP 40pcs
23888 СНГ 45 шт
9.10 грн.
50+8,19 грн.
200+7,28 грн.
Niobium oxide semiconductor capacitors K53-4A, polar, sealed in a metal case. Designed for operation in DC and pulsating current circuits. Features of K53-4A series capacitors: low and stable leakage currents, high values of specific capacitance, improved temperature-frequency characteristics of capacitance and dielectric loss tangent. 4 Flexible Leads 100 6.3 20 -60..+85 7 16 DIP 50pcs
23887 СНГ 264 шт
6 грн.
50+5,40 грн.
200+4,80 грн.
Niobium oxide semiconductor capacitors K53-4A, polar, sealed in a metal case. Designed for operation in DC and pulsating current circuits. Features of K53-4A series capacitors: low and stable leakage currents, high values of specific capacitance, improved temperature-frequency characteristics of capacitance and dielectric loss tangent. 3.2 Flexible Leads 15 30 30 -60..+85 7 12 DIP 140pcs
23885 СНГ 589 шт
7.60 грн.
50+6,84 грн.
200+6,08 грн.
Niobium oxide semiconductor capacitors K53-4A, polar, sealed in a metal case. Designed for operation in DC and pulsating current circuits. Features of K53-4A series capacitors: low and stable leakage currents, high values of specific capacitance, improved temperature-frequency characteristics of capacitance and dielectric loss tangent. 1.5 Flexible Leads 6,8 30 10 -60..+85 4 13 DIP 180pcs
23884 СНГ 9029 шт
6.10 грн.
50+5,49 грн.
200+4,88 грн.
Niobium oxide semiconductor capacitors K53-4A, polar, sealed in a metal case. Designed for operation in DC and pulsating current circuits. Features of K53-4A series capacitors: low and stable leakage currents, high values of specific capacitance, improved temperature-frequency characteristics of capacitance and dielectric loss tangent. 1.5 Flexible Leads 6,8 30 20 -60..+85 4 13 DIP 180pcs
23883 СНГ 2532 шт
14.50 грн.
50+13,05 грн.
200+11,60 грн.
K53-18V - oxide-semiconductor, polar, tantalum, sealed capacitors. Are intended for work in chains of direct and pulsating currents and in a pulsed mode in radio-electronic equipment. 0.7 Flexible Leads 1,5 40 20 -80...+125 3 8 DIP 100 pieces.
23882 СНГ 1599 шт
14.50 грн.
50+13,05 грн.
200+11,60 грн.
K53-18V - oxide-semiconductor, polar, tantalum, sealed capacitors. Are intended for work in chains of direct and pulsating currents and in a pulsed mode in radio-electronic equipment. 0.7 Flexible Leads 1,5 40 30 -80...+125 3 8 DIP 100 pieces.
23881 СНГ 2162 шт
15.20 грн.
50+13,68 грн.
200+12,16 грн.
K53-18V - oxide-semiconductor, polar, tantalum, sealed capacitors. Are intended for work in chains of direct and pulsating currents and in a pulsed mode in radio-electronic equipment. 0.7 Flexible Leads 1,5 40 10 -80...+125 3 8 DIP 100 pieces.
23880 СНГ 1240 шт
78 грн.
Standard size of the magnetic circuit ShLm10x10 ---------------------------------------------------- Parallel connection of windings: Variable voltage component Vef: 0.169 Inductance at rated current H: 0.0025 Rated bias current A: 3.2 Ohmic winding resistance Ohm: 0.24 ---------------------------------------------------- Series connection of windings: Variable voltage component Vef: 0.338 Inductance at rated current H: 0.01 Rated bias current A: 1.6 Ohmic winding resistance Ohm: 0.96 DIP 25pcs 2 Дроссель Д
22778 СНГ 17330 шт
2 грн.
Choke DM-0.4-20 (ax.) 20 μH 400mA 1.3 DIP 200pcs 0.4 1 Дроссель ДМ 20uH
23878 СНГ 11 шт
150 грн.
10+135 грн.
20+127,50 грн.
50+120 грн.
High voltage kenotron. V1-0.03/13 is intended for rectification of alternating current in continuous and pulsed modes of operation in special-purpose equipment. Cathode - oxide direct heating. Glass decoration with plinth. 50 Clamp 1 PC.
23877 СНГ 1479 шт
6 грн.
K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. 1.8 Flexible Leads 250 DIP 100 pieces. 5.175nF (5175pF) 1 %
23872 СНГ 6213 шт
6 грн.
K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. 2.8 Flexible Leads 250 DIP 180pcs 15.8nF (0.0158µF) 1 %
23875 СНГ 1748 шт
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
Transistor assemblies consisting of two silicon epitaxial-planar structures of pnp amplifying transistors on the same chip with separate leads. Designed for use in broadband balanced, differential and operational amplifiers and other stages of hermetically sealed equipment, which require the identity of the parameters of two transistors. 4.1 Bipolar SMD PNPx2 20мВт 100 pieces. 10В 20мА 500МГц 180
23874 СНГ 2 шт
320 грн.
10+288 грн.
20+272 грн.
50+256 грн.
High-voltage pulse kenotron. VI1-15/32 is designed to work in pulse circuits as a charging element. Anode cooling is natural. Cathode oxide, indirect heating. Glass decoration. 180 Clamp 1 PC.
23873 СНГ 11 шт
400 грн.
10+360 грн.
20+340 грн.
50+320 грн.
VI1-18/32 High-voltage pulse kenotron. Glass-metal balloon. Height 142mm, diameter 80mm. Tungsten cathode. Cooling is natural. Durability not less than 500 h. 450 Clamp 1 PC.
23876 СНГ 160 шт
6 грн.
K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. 2.8 Flexible Leads 250 DIP 200pcs 5.9nF (5900pF) 2 %
23871 СНГ 375 шт
52 грн.
10+49,40 грн.
20+46,80 грн.
50+44,20 грн.
100+41,60 грн.
The ONTs-RG-09-32/30-R1B cylindrical low-frequency compact connector is designed for operation in DC and AC electrical circuits with voltage up to 500 V and frequency up to 3 MHz. 30 DIP 100 pieces. Socket 32 To the body ONC
23870 СНГ 398 шт
6 грн.
100+4,80 грн.
500+3,60 грн.
1000+3 грн.
Precision resistors for general use, isolated, for printed wiring, suitable for operation in all climatic regions, designed to operate in DC, AC circuits in pulsed mode at a circuit operating voltage of up to 300 V (peak value). 1.8 hard conclusions DIP 10 pieces. 5,6 кОм 0.125 W 1 % ceramic
23868 СНГ 104 шт
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
Transistor assemblies consisting of two silicon epitaxial-planar structures of pnp amplifying transistors on the same chip with separate leads. Designed for use in broadband balanced, differential and operational amplifiers and other stages of hermetically sealed equipment, which require the identity of the parameters of two transistors. 2 Bipolar SMD PNPx2 20мВт 200pcs 15В 20мА 500МГц 140