Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Pin type Type of shell Working voltage, V Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Appointment Diode type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Capacity Resistance Resistor power Accuracy Stabilization voltage Zener diode housing type Curve Working current, A Number of windings Polarization Winding resistance, Ohm Operating current no more Drop-out current not less Maximum switching voltage Winding supply current Plug or socket Number of contacts Mechanical installation Type Color LED type Appointment Series Diode design LED purpose
21450 СНГ 223 шт
46 грн.
10+43,70 грн.
20+41,40 грн.
50+39,10 грн.
100+36,80 грн.
10 DIP 84pcs Fork 10 To the body ONC
21448 СНГ 990 шт
18 грн.
10+16,20 грн.
50+14,40 грн.
100+13,50 грн.
Resistors SP5-22 variable tuning wire for printed wiring. Single-element, multi-turn, with rectilinear movement of the movable system. Are intended for work in chains of direct, alternating and impulse currents. 2.8 hard conclusions DIP 10 pieces. 680 Ом 1 W 5 %
21441 СНГ 4 шт
35 грн.
10+33,25 грн.
50+31,50 грн.
100+28 грн.
The 589IK03 chip is an accelerated transfer circuit (RMS) and is designed to form group transfers when used in conjunction with a central processing unit (CPE) or any other circuit that has transfer preview outputs. One CMS scheme allows you to organize a 16-bit adder on the CPE or a 32-bit adder on arithmetic logic circuits with 4 bits. The IC has 17 information inputs, 8 information outputs and 1 control input, which allows you to control the output of the highest transfer, transferring it to the third state. 5 DIP28 DIP Logics 40pcs
21440 СНГ 91 шт
28 грн.
10+26,60 грн.
50+25,20 грн.
100+22,40 грн.
Block of microprogram control. 6.5 DIP40 DIP Logics 40pcs
21439 СНГ 55 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Two elements 4I-NOT with the ability to transfer the output to a high-impedance state when applied to the input E log. one 1 DIP14 DIP Logics 100 pieces.
21438 СНГ 7 шт
30 грн.
10+28,50 грн.
50+27 грн.
100+24 грн.
6-bit ADC with conversion rate up to 100 MHz. 3.5 DIP24 DIP ADC 60pcs
21434 СНГ 4 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Four two-input elements OR-NOT. 1 DIP14 DIP Logics 100 pieces.
21422 СНГ 144 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
5OR NOT 1 DIP14 DIP Logics 100 pieces.
21416 СНГ 464 шт
34 грн.
10+32,30 грн.
50+30,60 грн.
100+27,20 грн.
8-channel analog key. 5 SMD Logics 50pcs
21411 СНГ 3607 шт
2 грн.
50+ 1,80 грн.
200+ 1,60 грн.
500+ 1,40 грн.
Diode assembly, each consisting of two silicon planar epitaxial switching diodes with separate terminals. Are issued in the plastic case with flexible conclusions. 0.25 SMD 50V 20mA 200mA Pulse 100 pieces. assembly
21407 СНГ 342 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Six level converters. 1.1 DIP16 DIP Logics 100 pieces.
21406 СНГ 182 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
Two JK flip-flops with asynchronous RS inputs and dynamic recording control. 1.1 DIP16 DIP Logics 100 pieces.
21403 СНГ 443 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Multipurpose register (8 x 4 bits) 3.5 DIP24 DIP Logics 180pcs
21397 СНГ 95 шт
21 грн.
10+19,95 грн.
50+18,90 грн.
100+16,80 грн.
Four logical elements 2OR-NOT. 0.5 SO14 SMD Logics 200pcs
21391 СНГ 480 шт
5 грн.
50+4,50 грн.
200+4,25 грн.
500+3,75 грн.
Main technical parameters of LED AL360B: • Color of radiation (glow): green; • Light intensity: not less than 0.6 cd/m2; • DC forward voltage: no more than 1.7 V; • Maximum spectral distribution: 0.55...0.56 µm; • Maximum allowable direct forward current: 20 mA; • Maximum pulse current at a given pulse duration: 80 mA 0.4 DIP 80pcs Green 5mm round Indication
21390 СНГ 3187 шт
18 грн.
10+16,20 грн.
50+14,40 грн.
100+13,50 грн.
Resistors SP5-22 variable tuning wire for printed wiring. Single-element, multi-turn, with rectilinear movement of the movable system. Are intended for work in chains of direct, alternating and impulse currents. 2.8 hard conclusions DIP 10 pieces. 1 кОм 1 W 5 % A
21389 СНГ 3656 шт
11 грн.
10+9,90 грн.
50+8,80 грн.
100+8,25 грн.
Discharger spark switching uncontrolled. The R-4 arrester is designed to protect against surges in radio engineering devices of mobile and stationary equipment. Static breakdown voltage, V : 70-90 1.3 DIP 500pcs
21388 СНГ 276 шт
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
The KR590KN1 microcircuit is an eight-channel switch (rMOS) with a decoder and is designed for switching voltages from - 5 to + 5 V, for multi-channel digital information processing systems, in analog-to-digital converters. The ICs are input compatible with TTL circuits, have an enable command, input overvoltage protection, zero residual voltage, BCD controlled, select 1 of 8 channels. 1.1 DIP16 DIP Logics 90pcs
21385 СНГ 4865 шт
46 грн.
50+ 41,40 грн.
200+ 36,80 грн.
500+ 32,20 грн.
The main technical parameters of the microwave diode 3A121A: • Operating frequency: no more than 40 GHz; • Conversion loss: no more than 9 dB; • Rectified current: 0.3...1.4 mA; • Rated noise figure: no more than 9 dB; • Voltage standing wave ratio: no more than 3; • Output impedance: 200...600 Ohm; • DC forward voltage: 0.55...1.2 V; • Pulsed incident power: 100 mW; • Ambient temperature: -60...+85°С; • Minimum operating time: 50,000 hours; 0.0015 SMD КД-124 Microwave 80pcs single
21383 СНГ 2208 шт
6.50 грн.
10+6,17 грн.
50+5,85 грн.
100+5,20 грн.
Electronic dialer for telephones with pulse dialing and remembering the last number. 2.5 DIP22 DIP Telephony 64pcs
21375 СНГ 806 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
A counter dividing by eight. The IC uses Johnson's octal code (when the counter moves to the next logical state, only one logical variable changes). As one bit of the counter, a clocked MS type D flip-flop with a direct setting input of 0 is used. 1.1 DIP16 DIP Logics 90pcs
21370 СНГ 305 шт
80 грн.
Standard size of the magnetic circuit ShLm10x10 ---------------------------------------------------- Parallel connection of windings: Variable voltage component Vef: 0.169 Inductance at rated current H: 0.0025 Rated bias current A: 3.2 Ohmic winding resistance Ohm: 0.24 ---------------------------------------------------- Series connection of windings: Variable voltage component Vef: 0.338 Inductance at rated current H: 0.01 Rated bias current A: 1.6 Ohmic winding resistance Ohm: 0.96 DIP 20pcs 2 Дроссель Д
21369 СНГ 23610 шт
20 грн.
Relay RES-60 is sealed, two-position, single-stable, DC-powered, with two changeover contacts. Designed for switching electrical circuits of direct and alternating current. 3.5 3,5…4,5 DIP 40pcs 0.5 1 neutral 36 60mA 13mA 120v Constant
21352 СНГ 19886 шт
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Zener diodes KS518A silicon, planar, medium power. Designed to stabilize the rated voltage of 18 V in the stabilization current range of 1...45 mA. Are issued in the glass-to-metal case with flexible conclusions. The type of zener diode is given on the housing. The body of the zener diode in the operating mode serves as a positive electrode (anode). The mass of the zener diode is not more than 1 g. Specifications: aA0.336.002 TU. The main technical parameters of the KS518A zener diode: • Rated stabilization voltage: 18 V at Ist 5 mA; • Stabilization voltage spread: 16.2... 19.8 V; • Temperature coefficient of stabilization voltage: 0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 200 Ohm at Ist 1 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 45 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С 0.8 DIP 1Вт 500pcs 18V kd-8
21368 СНГ 6576 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode KS413B silicon diffusion-planar, designed to stabilize and limit the voltage. Climatic version - B, placement category - 3 Case type: KD-2 The mass of devices is not more than 0.15 g. Specifications: aA0.336.773 TU. The main technical parameters of the KS413B zener diode: • Rated stabilization voltage: 4.3 V; • Stabilization voltage spread: 4.1... 4.5 V; • Temperature coefficient of stabilization voltage: +0.01, -0.05%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 18 Ohm at Ist 20 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 70 mA; • Maximum allowable power dissipation on the zener diode: 0.34 W; • Ambient temperature operating range: -60... +125 °С 0.2 DIP 340мВт 200pcs 4V3 DO-35
21366 СНГ 2478 шт
2.50 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 3.2 Flexible Leads 630 DIP 300pcs 150nF (0.15µF) 20 %
21365 СНГ 938 шт
3 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 3.5 Flexible Leads 630 DIP 140pcs 150nF (0.15µF) 10 %
21363 СНГ 439 шт
2 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 0.5 Flexible Leads 63 DIP 1000pcs 100nF (0.1µF) 10 %
21354 СНГ 25 шт
100 грн.
10+95 грн.
50+90 грн.
100+80 грн.
Transistor silicon mezaplanar structure npn switching. Designed for use in switching devices, in DC voltage converters, high-voltage stabilizers. The 2T826B transistor is available in a metal case with glass insulators and hard leads. The device type is indicated on the case. The 2T826B transistor is produced in the form of undivided crystals with pads on the plate for hybrid integrated circuits. The type of device is indicated on the label. The mass of a transistor in a metal case is not more than 20 g, a crystal is not more than 0.01 g. Hull type: KT-9 (TO-3). Specifications: aA0.339.058 TU. 14 kt-9 Bipolar DIP NPN 15Вт 40pcs 700В 6МГц 10
21353 СНГ 39 шт
100 грн.
10+95 грн.
50+90 грн.
100+80 грн.
Transistor silicon mezaplanar structure npn switching. Designed for use in switching devices, in DC voltage converters, high-voltage stabilizers. The 2T826A transistor is available in a metal case with glass insulators and hard leads. The device type is indicated on the case. The 2T826A transistor is produced in the form of undivided crystals with pads on the plate for hybrid integrated circuits. The type of device is indicated on the label. The mass of a transistor in a metal case is not more than 20 g, a crystal is not more than 0.01 g. Hull type: KT-9 (TO-3). Specifications: aA0.339.058 TU. 14 kt-9 Bipolar DIP NPN 15Вт 40pcs 700В 6МГц 10