Brand «СНГ»

Results: 4144

	MPN	Article	Brand	In stock	Price	Discounts	Quantity	Description	Weight g.	Pin type	Type of shell	Working voltage, V	Transistor case type	Transistor type	Mounting type	Type of shell	Urev. max, V	Ipr. max.	Appointment	Diode type	Structure	Power	Factory packaging	Collector-emitter voltage	Collector current	Frequency	Current gain	Capacity	Accuracy	Stabilization voltage	Zener diode housing type	Working current, A	Number of windings	Polarization	Winding resistance, Ohm	Operating current no more	Drop-out current not less	Maximum switching voltage	Winding supply current	Plug or socket	Number of contacts	Mechanical installation	Type	Appointment	Series	Diode design

Chip K561IE9

#9801

21375

СНГ

806 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

A counter dividing by eight. The IC uses Johnson&#39;s octal code (when the counter moves to the next logical state, only one logical variable changes). As one bit of the counter, a clocked MS type D flip-flop with a direct setting input of 0 is used.

1.1

—

DIP16

—

DIP

—

Logics

—

90pcs

—

Throttle D230V

#9800

21370

СНГ

305 шт

80 грн.

Standard size of the magnetic circuit ShLm10x10 ---------------------------------------------------- Parallel connection of windings: Variable voltage component Vef: 0.169 Inductance at rated current H: 0.0025 Rated bias current A: 3.2 Ohmic winding resistance Ohm: 0.24 ---------------------------------------------------- Series connection of windings: Variable voltage component Vef: 0.338 Inductance at rated current H: 0.01 Rated bias current A: 1.6 Ohmic winding resistance Ohm: 0.96

—

DIP

—

20pcs

—

Дроссель

—

Relay RES60 RS4.569.435 09.02 (3.5-4.5V)

#9799

21369

СНГ

23595 шт

20 грн.

Relay RES-60 is sealed, two-position, single-stable, DC-powered, with two changeover contacts. Designed for switching electrical circuits of direct and alternating current.

3.5

—

3,5…4,5

—

DIP

—

40pcs

—

0.5

neutral

60mA

13mA

120v

Constant

—

Zener diode KS518A

#9798

21352

СНГ

19886 шт

3 грн.

50+	2,70 грн.
100+	2,40 грн.
250+	2,25 грн.

Zener diodes KS518A silicon, planar, medium power. Designed to stabilize the rated voltage of 18 V in the stabilization current range of 1...45 mA. Are issued in the glass-to-metal case with flexible conclusions. The type of zener diode is given on the housing. The body of the zener diode in the operating mode serves as a positive electrode (anode). The mass of the zener diode is not more than 1 g. Specifications: aA0.336.002 TU. The main technical parameters of the KS518A zener diode: • Rated stabilization voltage: 18 V at Ist 5 mA; • Stabilization voltage spread: 16.2... 19.8 V; • Temperature coefficient of stabilization voltage: 0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 200 Ohm at Ist 1 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 45 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С

0.8

—

DIP

—

1Вт

500pcs

—

18V

kd-8

—

Zener diode KS413B

#9797

21368

СНГ

6576 шт

1 грн.

50+	0,90 грн.
100+	0,80 грн.
250+	0,75 грн.

Zener diode KS413B silicon diffusion-planar, designed to stabilize and limit the voltage. Climatic version - B, placement category - 3 Case type: KD-2 The mass of devices is not more than 0.15 g. Specifications: aA0.336.773 TU. The main technical parameters of the KS413B zener diode: • Rated stabilization voltage: 4.3 V; • Stabilization voltage spread: 4.1... 4.5 V; • Temperature coefficient of stabilization voltage: +0.01, -0.05%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 18 Ohm at Ist 20 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 70 mA; • Maximum allowable power dissipation on the zener diode: 0.34 W; • Ambient temperature operating range: -60... +125 °С

0.2

—

DIP

—

340мВт

200pcs

—

4V3

DO-35

—

Capacitor K73-17 0.15uF 630V 20%

#9795

21366

СНГ

2478 шт

2.50 грн.

K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode.

3.2

Flexible Leads

—

630

—

DIP

—

300pcs

—

150nF (0.15µF)

20 %

—

Capacitor K73-17V 0.15uF 630V 10%

#9794

21365

СНГ

938 шт

3 грн.

K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode.

3.5

Flexible Leads

—

630

—

DIP

—

140pcs

—

150nF (0.15µF)

10 %

—

Capacitor K73-17 0.1uF 63V 10%

#9793

21363

СНГ

433 шт

2 грн.

K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode.

0.5

Flexible Leads

—

DIP

—

1000pcs

—

100nF (0.1µF)

10 %

—

Transistor 2T826B (=KT826B)

#9783

21354

СНГ

25 шт

100 грн.

10+	95 грн.
50+	90 грн.
100+	80 грн.

Transistor silicon mezaplanar structure npn switching. Designed for use in switching devices, in DC voltage converters, high-voltage stabilizers. The 2T826B transistor is available in a metal case with glass insulators and hard leads. The device type is indicated on the case. The 2T826B transistor is produced in the form of undivided crystals with pads on the plate for hybrid integrated circuits. The type of device is indicated on the label. The mass of a transistor in a metal case is not more than 20 g, a crystal is not more than 0.01 g. Hull type: KT-9 (TO-3). Specifications: aA0.339.058 TU.

—

kt-9

Bipolar

DIP

—

NPN

15Вт

40pcs

700В

1А

6МГц

—

Transistor 2T826A (=KT826A)

#9782

21353

СНГ

39 шт

100 грн.

10+	95 грн.
50+	90 грн.
100+	80 грн.

Transistor silicon mezaplanar structure npn switching. Designed for use in switching devices, in DC voltage converters, high-voltage stabilizers. The 2T826A transistor is available in a metal case with glass insulators and hard leads. The device type is indicated on the case. The 2T826A transistor is produced in the form of undivided crystals with pads on the plate for hybrid integrated circuits. The type of device is indicated on the label. The mass of a transistor in a metal case is not more than 20 g, a crystal is not more than 0.01 g. Hull type: KT-9 (TO-3). Specifications: aA0.339.058 TU.

—

kt-9

Bipolar

DIP

—

NPN

15Вт

40pcs

700В

1А

6МГц

—

Transistor KT805A with fasteners

#9781

21351

СНГ

50 шт

25 грн.

10+	23,75 грн.
50+	22,50 грн.
100+	20 грн.

Transistors silicon epitaxial structures npn switching. Designed for use in line-scan output stages, ignition devices for internal combustion engines and other switching devices. Transistors KT805A, KT805B are produced in a glass-to-metal case with hard leads. The device type is indicated on the case. The mass of the transistor is not more than 24 g. Hull type: KTYU-3-20. Specifications: aA0.336.341 TU.

—

kt-282

Bipolar

DIP

—

NPN

30Вт

20pcs

60В

5А

20МГц

—

Zener diode KS113A

#9780

21350

СНГ

10384 шт

3 грн.

50+	2,70 грн.
100+	2,40 грн.
250+	2,25 грн.

Zener diode low-voltage low power, 1.3V.

0.7

—

DIP

—

180мВт

100 pieces.

—

1V3

kd-8

—

Zener diode D816G

#9779

21349

СНГ

21557 шт

6 грн.

50+	5,40 грн.
100+	4,80 грн.
250+	4,50 грн.

Medium power silicon zener diode, 39V The main technical parameters of the Zener diode D816G: • Stabilization voltage spread: 35... 43 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 12 Ohm; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 130 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С

4.2

—

Screw

—

5Вт

100 pieces.

—

39V

ks620

—

MDP1-1, Fuse holder 4x15mm

#9778

21328

СНГ

11 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	5,10 грн.
200+	4,80 грн.

The MDP1-1 fuse holder is designed to operate in electrical networks with voltage up to 250 V DC and AC up to 2 A in general industrial and special-purpose equipment. Specifications: Technical parameters of fuse holder MDP1-1: • Operating voltage, V ...... 250 • Rated current, A ...... 2 • Contact resistance, no more than, Ohm ...... 0.01 • Operating temperature range, °С ...... from -60 to +85 • Minimum time to failure, h ...... not less than 10000 • Mounting method ...... screws • Overall dimensions (diameter x length), mm ...... 18.5x26 • Mass, g ...... 5.3

5.3

—

250

—

Screw

—

100 pieces.

—

K1116KP4, (=DN838) Hall sensor

#9777

21327

СНГ

20893 шт

6 грн.

It is a magnetically sensitive electronic proximity switch. Switches DC voltage. The magnetic characteristic is bipolar, the transfer characteristic is direct. It has one open collector output. 1 - INPUT (supply voltage), 2 - OUTPUT, 3 - GENERAL, order from the key. Signal rise time, µs 1 Min supply voltage, V 6 Max supply voltage, V 12

0.34

—

DIP

—

Sensors

—

100 pieces.

—

Chip KR1561IR14

#9776

21325

СНГ

30 шт

7 грн.

10+	6,65 грн.
50+	6,30 грн.
100+	5,60 грн.

4-bit register.

1.1

—

DIP16

—

DIP

—

Logics

—

90pcs

—

Chip K555IR35

#9773

21316

СНГ

20 шт

8 грн.

10+	7,60 грн.
50+	7,20 грн.
100+	6,40 грн.

An 8-bit register set to zero.

1.2

—

DIP20

—

DIP

—

Logics

—

70pcs

—

Connector СНО53-8/30-9Р-2

#9769

21312

СНГ

214 шт

15 грн.

10+	14,25 грн.
20+	13,50 грн.
50+	12,75 грн.
100+	12 грн.

2.5

—

DIP

—

100 pieces.

—

Socket

For a fee

SNO

—

Chip KM555IE9

#9764

21266

СНГ

46 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

Synchronous four-digit binary-decimal counter.

1.1

—

DIP16

—

DIP

—

Logics

—

100 pieces.

—

Chip KM555IR15

#9763

21285

СНГ

98 шт

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

The register is four-bit with a buffer bus and three output states.

1.1

—

DIP16

—

DIP

—

Logics

—

100 pieces.

—

KDS111A, Diode assembly

#9760

21279

СНГ

13464 шт

1.80 грн.

50+	1,62 грн.
200+	1,44 грн.
500+	1,26 грн.

Diode assembly, each consisting of two diodes connected with a common cathode.

0.3

—

DIP

—

300V

200mA

—

Rectifier

—

250pcs

—

double common cathode

Zener diode KS415A

#9759

21278

СНГ

18564 шт

2 грн.

50+	1,80 грн.
100+	1,60 грн.
250+	1,50 грн.

P=0.34W U=2.4V at Ist=20mA

0.2

—

DIP

—

350мВт

200pcs

—

2V4

kd-4

—

Optocoupler AOD133A

#9758

21277

СНГ

15276 шт

12 грн.

10+	10,80 грн.
50+	9,60 грн.

Diode optocoupler. Designed for galvanic isolation of electrical circuits between which information is transmitted.

—

DIP

—

100 pieces.

—

Chip KR1146FP1

#9746

21211

СНГ

2 шт

20 грн.

10+	19 грн.
50+	18 грн.
100+	16 грн.

Filter for systems of pulse-code modulation of communication in telephone equipment.

1.2

—

DIP16

—

DIP

—

Filters

—

90pcs

—

Chip KR132RU14

#9743

21204

СНГ

1 шт

18 грн.

10+	17,10 грн.
50+	16,20 грн.
100+	14,40 грн.

The microcircuit is a static random access memory with control circuits with an information capacity of 1024 bits.

1.3

—

DIP18

—

DIP

—

Memory

—

90pcs

—

Chip K1102AP7

#9742

21202

СНГ

158 шт

18 грн.

10+	17,10 грн.
50+	16,20 грн.
100+	14,40 грн.

Peripheral dual current driver with 2I-NOT element

0.5

—

DIP8

—

DIP

—

Logics

—

100 pieces.

—

Diode KD202V

#9737

21147

СНГ

40889 шт

7 грн.

50+	6,30 грн.
200+	5,60 грн.
500+	4,90 грн.

Diodes KD202V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. Are issued in the glass-to-metal case with rigid conclusions. The type of the diode and the connection diagram of the electrodes with the leads are given on the case. The main technical characteristics of the KD202V diode: • uobp and max - Maximum impulse reverse voltage: 100 V; • inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • unp - DC forward voltage: no more than 0.9 V at inp 5 A; • iobr - Constant reverse current: no more than 800 µA at uobp 100 V

5.2

—

Screw

КД-11

100V

—

Rectifier

—

100 pieces.

—

single

Transistor KT3117A1

#9736

21146

СНГ

154 шт

4 грн.

10+	3,80 грн.
50+	3,60 грн.
100+	3,20 грн.

Transistor NPN 60V 0.4A 0.3W 200MHz TO92 (KT-26)

0.4

—

TO92

Bipolar

DIP

—

NPN

500мВт

500pcs

60В

400мА

200МГц

—

Chip 153UD4 (NICKEL)

#9726

21062

СНГ

14 шт

30 грн.

10+	28,50 грн.
50+	27 грн.
100+	24 грн.

General Purpose Operational Amplifier

—

TO-99

—

DIP

—

Amplifiers

—

100 pieces.

—

Microcircuit KR1114EU4 b/mark. (=TL494)

#9724

22323

СНГ

466 шт

8 грн.

10+	7,60 грн.
50+	7,20 грн.
100+	6,40 грн.

PWM controller up to 200 kHz. Upit=8-40V, Iout=200 mA

1.2

—

DIP16

—

DIP

—

Nutrition

—

90pcs

—