Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Appointment | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain |
|---|
|
Chip K144IR1P
#7367
|
22100 | СНГ | 190 шт |
6 грн.
|
|
Quasi-static sequential shift register for 21 bits, consisting of three registers with the number of bits 1, 4, 16 with separate inputs, with common shift and power circuits. | 1 | DIP14 | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — | ||||||||
|
Chip K555TV6
#7366
|
21306 | СНГ | 4511 шт |
4 грн.
|
|
Two JK flip-flops with reset. | 1 | DIP14 | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — | ||||||||
|
Chip KR580VK38
#7364
|
22203 | СНГ | 270 шт |
10 грн.
|
|
System controller. | 4 | DIP28 | — | — | DIP | Microcontrollers | — | — | 60pcs | — | — | — | — | ||||||||
|
Chip KR580VN59
#7363
|
21687 | СНГ | 356 шт |
10 грн.
|
|
Programmable interrupt controller. Handles up to 8 microprocessor interrupt requests from external devices. The IS provides for the possibility of expanding the number of serviced requests up to 64 by means of its cascade connection. Allows you to reduce the software and time spent on interrupts in systems with multiple priority levels. | 3.5 | DIP28 | — | — | DIP | Microcontrollers | — | — | 36pcs | — | — | — | — | ||||||||
|
Chip K561ID1
#7360
|
21326 | СНГ | 555 шт |
6 грн.
|
|
Binary Decimal Decoder. | 1.1 | DIP16 | — | — | DIP | Logics | — | — | 90pcs | — | — | — | — | ||||||||
| 24599 | СНГ | 98 шт |
8 грн.
|
|
The main technical characteristics of the transistor 1T308B: • Structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 120 MHz; • Ukbo - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 20 V; • Uebo - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 50 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 50...120 (1V; 10mA); • Sk - Collector junction capacity: no more than 8 (5V); • Rke us - Saturation resistance between collector and emitter: no more than 24 Ohm; • Ksh - Transistor noise factor: not standardized; • tk - Time constant of the feedback circuit at high frequency: no more than 400 ps. | 2 | — | — | Bipolar | DIP | — | PNP | 150мВт | 100 pieces. | 20В | 120мА | 120МГц | 120 | |||||||||
|
Transistor GT308V
#6850
|
25668 | СНГ | 3 шт |
12 грн.
|
|
Transistors GT308V germanium diffusion-alloy structures pnp universal. Designed for use in oscillators, power amplifiers, pulse devices. The main technical characteristics of the GT308V transistor: • Structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 120 MHz; • Ukbo - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 20 V; • Uebo - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 50 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 80...150 (1V; 10mA); • Sk - Collector junction capacity: no more than 8 (5V); • Rke us - Saturation resistance between collector and emitter: no more than 24 Ohm; • Ksh - Transistor noise factor: no more than 8 dB (1.6 MHz); • tk - Time constant of the feedback circuit at high frequency: no more than 400 ps. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | PNP | 150мВт | 100 pieces. | 15В | 50мА | 120МГц | 150 | ||||||||
| 29130 | СНГ | 61 шт |
8 грн.
|
|
Transistors 1T308A germanium diffusion-alloy structures pnp universal. Designed for use in oscillators, power amplifiers, pulse devices. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | PNP | 150мВт | 100 pieces. | 15В | 120мА | 120МГц | 75 | |||||||||
|
Transistor KT361G
#6846
|
23589 | СНГ | 8116 шт |
2 грн.
|
|
Designed for use in high frequency amplifiers. | 0.2 | — | КТ-13 | Bipolar | DIP | — | PNP | 150мВт | 1000pcs | 35В | 50мА | 250МГц | 350 | ||||||||
|
Transistor KT361B
#6844
|
23551 | СНГ | 856 шт |
2 грн.
|
|
Designed for use in high frequency amplifiers. | 0.2 | — | КТ-13 | Bipolar | DIP | — | PNP | 150мВт | 1000pcs | 20В | 50мА | 250МГц | 350 | ||||||||
|
Transistor KT361A
#6843
|
24622 | СНГ | 134 шт |
2 грн.
|
|
Designed for use in high frequency amplifiers. | 0.2 | — | КТ-13 | Bipolar | DIP | — | PNP | 150мВт | 1000pcs | 25В | 50мА | 250МГц | 90 | ||||||||
|
Transistor KT315I
#6842
|
23552 | СНГ | 883 шт |
2 грн.
|
|
Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. | 0.25 | — | КТ-13 | Bipolar | DIP | — | NPN | 100мВт | 800 pcs. | 60В | 50мА | 250МГц | 30 | ||||||||
|
Transistor KT315E
#6840
|
23555 | СНГ | 638 шт |
2 грн.
|
|
Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. | 0.25 | — | КТ-13 | Bipolar | DIP | — | NPN | 150мВт | 800 pcs. | 35В | 100мА | 250МГц | 350 | ||||||||
|
Transistor KT315A
#6837
|
22799 | СНГ | 3439 шт |
2 грн.
|
|
Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. | 0.25 | — | КТ-13 | Bipolar | DIP | — | NPN | 150мВт | 800 pcs. | 25В | 100мА | 250МГц | 120 | ||||||||
|
Transistor KT3107K
#6836
|
22261 | СНГ | 82 шт |
3 грн.
|
|
0.3 | — | TO92 | Bipolar | DIP | — | PNP | 300мВт | 1000pcs | 25В | 200мА | 200МГц | 220 | |||||||||
| 22329 | СНГ | 14 шт |
20 грн.
|
|
Silicon epitaxial-planar structure npn microwave amplifying transistors with a normalized noise figure. | 0.2 | — | КТ-14 | Bipolar | SMD | — | NPN | 100мВт | 200pcs | 10В | 20мА | 3ГГц | 240 | |||||||||
|
Chip K172LM2
#5708
|
25688 | СНГ | 748 шт |
8 грн.
|
|
Logic element 10OR-NOT/10OR. | 1 | DIP14 | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — | ||||||||
|
Chip K172LI1
#5707
|
25945 | СНГ | 145 шт |
8 грн.
|
|
4 logic elements 2I. | 1 | DIP14 | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — | ||||||||
|
Chip K170AP4
#5701
|
21949 | СНГ | 146 шт |
6 грн.
|
|
Quad-channel clock driver for nMOS memory control. | 1 | DIP16 | — | — | DIP | Logics | — | — | 90pcs | — | — | — | — | ||||||||
|
Chip K170AP2V
#5699
|
21668 | СНГ | 344 шт |
6 грн.
|
|
The K170AP2V microcircuit consists of 2 signal conditioners for communication lines of data transmission equipment. | 0.5 | DIP8 | — | — | DIP | Logics | — | — | 200pcs | — | — | — | — | ||||||||
|
Chip K170AA7
#5697
|
26313 | СНГ | 120 шт |
8 грн.
|
|
The shaper of the incoming currents. | 1.2 | DIP16 | — | — | DIP | Logics | — | — | 90pcs | — | — | — | — | ||||||||
|
Chip K170AA1
#5695
|
22193 | СНГ | 38 шт |
6 грн.
|
|
2 200 mA incoming current drivers. | 1 | DIP14 | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — | ||||||||
|
Chip K161KN2
#5692
|
21961 | СНГ | 32 шт |
6 грн.
|
|
7-channel switcher with direct inputs. | 1.3 | DIP16 | — | — | DIP | Logics | — | — | 80pcs | — | — | — | — | ||||||||
|
Chip K155LA18
#5685
|
21269 | СНГ | 16 шт |
6 грн.
|
|
Integrated circuit of the TTL series. K155LA18 microcircuits are 2 2I-NOT logic elements with a powerful open collector output. Contains 36 integral elements. Housing type 201.8-1. Maximum permissible operating modes K155LA18: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С | 0.5 | DIP8 | — | — | DIP | Logics | — | — | 200pcs | — | — | — | — | ||||||||
|
Chip K155HL1
#5682
|
25950 | СНГ | 1 шт |
7 грн.
|
|
Multifunctional element for computers. | 1 | DIP14 | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — | ||||||||
|
Chip K155IE9
#5672
|
24931 | СНГ | 22 шт |
9 грн.
|
|
Synchronous decimal four-digit counter. | 1.2 | DIP16 | — | — | DIP | Logics | — | — | 90pcs | — | — | — | — | ||||||||
|
Chip K155IE4
#5670
|
21376 | СНГ | 1 шт |
8 грн.
|
|
The K155IE4 microcircuits are a counter-divider by 12. Each IC consists of four JK flip-flops, all set to 0. Housing type 201.14-1, weight no more than 1 g. Maximum permissible operating modes: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С | 1 | DIP14 | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — | ||||||||
|
Optocoupler AOT101AC
#5660
|
22348 | СНГ | 3 шт |
20 грн.
|
|
They are used for electronic switching of unipolar current with galvanic binding between input and output. | 0.5 | DIP8 | — | — | DIP | — | — | — | 200pcs | — | — | — | — | ||||||||
|
Chip K158TV1
#5656
|
22345 | СНГ | 7 шт |
6 грн.
|
|
JK flip-flop with 3I input logic. | 1 | DIP14 | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — | ||||||||
|
Chip K158LR4
#5655
|
22344 | СНГ | 1 шт |
6 грн.
|
|
Logic element 4-4I-2OR-NOT with the possibility of expansion by OR. | 1 | DIP14 | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — |