Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Transistor case type Transistor type Mounting type Appointment Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
22100 СНГ 190 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Quasi-static sequential shift register for 21 bits, consisting of three registers with the number of bits 1, 4, 16 with separate inputs, with common shift and power circuits. 1 DIP14 — — DIP Logics — — 100 pieces. — — — —
21306 СНГ 4511 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
Two JK flip-flops with reset. 1 DIP14 — — DIP Logics — — 100 pieces. — — — —
22203 СНГ 270 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
System controller. 4 DIP28 — — DIP Microcontrollers — — 60pcs — — — —
21687 СНГ 356 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Programmable interrupt controller. Handles up to 8 microprocessor interrupt requests from external devices. The IS provides for the possibility of expanding the number of serviced requests up to 64 by means of its cascade connection. Allows you to reduce the software and time spent on interrupts in systems with multiple priority levels. 3.5 DIP28 — — DIP Microcontrollers — — 36pcs — — — —
21326 СНГ 555 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Binary Decimal Decoder. 1.1 DIP16 — — DIP Logics — — 90pcs — — — —
24599 СНГ 98 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
The main technical characteristics of the transistor 1T308B: • Structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 120 MHz; • Ukbo - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 20 V; • Uebo - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 50 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 50...120 (1V; 10mA); • Sk - Collector junction capacity: no more than 8 (5V); • Rke us - Saturation resistance between collector and emitter: no more than 24 Ohm; • Ksh - Transistor noise factor: not standardized; • tk - Time constant of the feedback circuit at high frequency: no more than 400 ps. 2 — — Bipolar DIP — PNP 150мВт 100 pieces. 20В 120мА 120МГц 120
25668 СНГ 3 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors GT308V germanium diffusion-alloy structures pnp universal. Designed for use in oscillators, power amplifiers, pulse devices. The main technical characteristics of the GT308V transistor: • Structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 120 MHz; • Ukbo - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 20 V; • Uebo - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 50 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 80...150 (1V; 10mA); • Sk - Collector junction capacity: no more than 8 (5V); • Rke us - Saturation resistance between collector and emitter: no more than 24 Ohm; • Ksh - Transistor noise factor: no more than 8 dB (1.6 MHz); • tk - Time constant of the feedback circuit at high frequency: no more than 400 ps. 1.8 — КТЮ-3-3 Bipolar DIP — PNP 150мВт 100 pieces. 15В 50мА 120МГц 150
29130 СНГ 61 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistors 1T308A germanium diffusion-alloy structures pnp universal. Designed for use in oscillators, power amplifiers, pulse devices. 1.8 — КТЮ-3-3 Bipolar DIP — PNP 150мВт 100 pieces. 15В 120мА 120МГц 75
23589 СНГ 8116 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Designed for use in high frequency amplifiers. 0.2 — КТ-13 Bipolar DIP — PNP 150мВт 1000pcs 35В 50мА 250МГц 350
23551 СНГ 856 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Designed for use in high frequency amplifiers. 0.2 — КТ-13 Bipolar DIP — PNP 150мВт 1000pcs 20В 50мА 250МГц 350
24622 СНГ 134 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Designed for use in high frequency amplifiers. 0.2 — КТ-13 Bipolar DIP — PNP 150мВт 1000pcs 25В 50мА 250МГц 90
23552 СНГ 883 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 — КТ-13 Bipolar DIP — NPN 100мВт 800 pcs. 60В 50мА 250МГц 30
23555 СНГ 638 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 — КТ-13 Bipolar DIP — NPN 150мВт 800 pcs. 35В 100мА 250МГц 350
22799 СНГ 3439 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 — КТ-13 Bipolar DIP — NPN 150мВт 800 pcs. 25В 100мА 250МГц 120
22261 СНГ 82 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 — TO92 Bipolar DIP — PNP 300мВт 1000pcs 25В 200мА 200МГц 220
22329 СНГ 14 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Silicon epitaxial-planar structure npn microwave amplifying transistors with a normalized noise figure. 0.2 — КТ-14 Bipolar SMD — NPN 100мВт 200pcs 10В 20мА 3ГГц 240
25688 СНГ 748 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Logic element 10OR-NOT/10OR. 1 DIP14 — — DIP Logics — — 100 pieces. — — — —
25945 СНГ 145 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
4 logic elements 2I. 1 DIP14 — — DIP Logics — — 100 pieces. — — — —
21949 СНГ 146 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Quad-channel clock driver for nMOS memory control. 1 DIP16 — — DIP Logics — — 90pcs — — — —
21668 СНГ 344 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
The K170AP2V microcircuit consists of 2 signal conditioners for communication lines of data transmission equipment. 0.5 DIP8 — — DIP Logics — — 200pcs — — — —
26313 СНГ 120 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
The shaper of the incoming currents. 1.2 DIP16 — — DIP Logics — — 90pcs — — — —
22193 СНГ 38 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
2 200 mA incoming current drivers. 1 DIP14 — — DIP Logics — — 100 pieces. — — — —
21961 СНГ 32 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
7-channel switcher with direct inputs. 1.3 DIP16 — — DIP Logics — — 80pcs — — — —
21269 СНГ 16 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Integrated circuit of the TTL series. K155LA18 microcircuits are 2 2I-NOT logic elements with a powerful open collector output. Contains 36 integral elements. Housing type 201.8-1. Maximum permissible operating modes K155LA18: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С 0.5 DIP8 — — DIP Logics — — 200pcs — — — —
25950 СНГ 1 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Multifunctional element for computers. 1 DIP14 — — DIP Logics — — 100 pieces. — — — —
24931 СНГ 22 шт
9 грн.
10+8,55 грн.
50+8,10 грн.
100+7,20 грн.
Synchronous decimal four-digit counter. 1.2 DIP16 — — DIP Logics — — 90pcs — — — —
21376 СНГ 1 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
The K155IE4 microcircuits are a counter-divider by 12. Each IC consists of four JK flip-flops, all set to 0. Housing type 201.14-1, weight no more than 1 g. Maximum permissible operating modes: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С 1 DIP14 — — DIP Logics — — 100 pieces. — — — —
22348 СНГ 3 шт
20 грн.
10+18 грн.
50+16 грн.
They are used for electronic switching of unipolar current with galvanic binding between input and output. 0.5 DIP8 — — DIP — — — 200pcs — — — —
22345 СНГ 7 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
JK flip-flop with 3I input logic. 1 DIP14 — — DIP Logics — — 100 pieces. — — — —
22344 СНГ 1 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Logic element 4-4I-2OR-NOT with the possibility of expansion by OR. 1 DIP14 — — DIP Logics — — 100 pieces. — — — —