transistors
Filter layout:
|
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Transistor case type | Transistor type | Mounting type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain |
|---|
SPP03N60S5
#8967
|
— | INFINEON TECHNOLOGIES | — |
22 грн.
|
|
— | 2.8 | TO220 | Field | DIP | MOS n-channel | 600В | 3.2А | 38Вт | 50pcs | — | — | — | — | ||||||||||
FQPF3N90
#8968
|
— | FAIRCHILD SEMICONDUCTOR | — |
20 грн.
|
|
— | 2.5 | TO220F | Field | DIP | MOS n-channel | 900В | 2.1А | 43Вт | 50pcs | — | — | — | — | ||||||||||
STP3NB60
#8969
|
— | ST MICROELECTRONICS | — |
26 грн.
|
|
— | 2.8 | TO220 | Field | DIP | MOS n-channel | 600В | 3.3А | 80Вт | 50pcs | — | — | — | — | ||||||||||
STP3NB60FP
#8970
|
— | ST MICROELECTRONICS | — |
26 грн.
|
|
— | 2.5 | TO220FP | Field | DIP | MOS n-channel | 600В | 2.2А | 35Вт | 50pcs | — | — | — | — | ||||||||||
IRG7R313U
#9023
|
20573 | INTERNATIONAL RECTIFIER | — |
32 грн.
|
|
— | 0.7 | DPAK | IGBT | SMD | — | — | — | 78Вт | 1000pcs | 330В | 40А | — | — | ||||||||||
| 20628 | INFINEON TECHNOLOGIES | — |
28 грн.
|
|
— | 2.5 | D2PAK | IGBT | SMD | — | — | — | 138Вт | 50pcs | 600В | 15А | — | — | |||||||||||
| 21462 | FAIRCHILD SEMICONDUCTOR | — |
27 грн.
|
|
— | 7 | TO3 | Bipolar | DIP | NPN | — | — | 130Вт | 30pcs | 400В | 12А | 4МГц | 30 | |||||||||||
| 21470 | ST MICROELECTRONICS | — |
76 грн.
|
|
— | 7 | TO247 | IGBT | DIP | — | — | — | 250Вт | 30pcs | 600В | 45А | — | — | |||||||||||
Transistor BU508DF
#9528
|
20786 | NXP | — |
28 грн.
|
|
— | 5.7 | TO3P | Bipolar | DIP | NPN | — | — | 50Вт | 30pcs | 1.5кВ | 8А | — | — | ||||||||||
Transistor BU508DFI
#9529
|
20787 | ST MICROELECTRONICS | — |
28 грн.
|
|
— | 5.7 | TO3P | Bipolar | DIP | NPN | — | — | 50Вт | 30pcs | 1.5кВ | 8А | — | — | ||||||||||
| 20793 | FAIRCHILD SEMICONDUCTOR | — |
8 грн.
|
|
— | 2.8 | TO220 | Bipolar | DIP | NPN | — | — | 80Вт | 50pcs | 700В | 8А | — | 30 | |||||||||||
| 20798 | FAIRCHILD SEMICONDUCTOR | — |
25 грн.
|
|
— | 2.5 | TO220F | Field | DIP | MOS n-channel | 600В | 4.5А | 33Вт | 50pcs | — | — | — | — | |||||||||||
| 20810 | Stanson Technology | — |
10 грн.
|
|
— | 0.3 | SO8 | Field | SMD | MOS n+p-channel | 30В | 6.5А | 2Вт | 2500pcs | — | — | — | — | |||||||||||
| 20857 | FAIRCHILD SEMICONDUCTOR | — |
14 грн.
|
|
— | 2.8 | TO220 | Bipolar | DIP | NPN | — | — | 100Вт | 50pcs | 400В | 12А | 4МГц | 30 | |||||||||||
Transistor 2SD1710
#9671
|
20877 | CHINA | — |
25 грн.
|
|
— | 7 | TO3 | Bipolar | DIP | NPN | — | — | 45Вт | 30pcs | 500В | 7А | — | — | ||||||||||
Transistor FGH40N60SFD
#9684
|
20925 | FAIRCHILD SEMICONDUCTOR | — |
62 грн.
|
|
— | 7 | TO247 | IGBT | DIP | — | — | — | 290Вт | 30pcs | 600В | 40А | — | — | ||||||||||
Transistor RJH60F7
#9688
|
20933 | RENESAS | — |
80 грн.
|
|
— | 7 | TO247A | IGBT | DIP | — | — | — | 330Вт | 30pcs | 600В | 50А | — | — | ||||||||||
| 21016 | FAIRCHILD SEMICONDUCTOR | — |
14 грн.
|
|
— | 2.8 | TO220 | Bipolar | DIP | NPN | — | — | 100Вт | 50pcs | 700В | 12А | 4МГц | 40 | |||||||||||
Transistor APM4953
#9696
|
21024 | ANPEC | — |
8 грн.
|
|
— | 0.3 | SO8 | Field | SMD | MOS p-channel x2 | 30В | 4.9А | 2.5Вт | 2500pcs | — | — | — | — | ||||||||||
Transistor P214G
#9906
|
21706 | СНГ | — |
15 грн.
|
|
— | The main technical characteristics of the P214G transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 10 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: not standardized; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. | 10 | — | Bipolar | DIP | PNP | — | — | 10Вт | 20pcs | 55В | 5А | — | — | |||||||||
Transistor KT646B
#10111
|
21850 | INTEGRAL | — |
3 грн.
|
|
— | 1 | TO126 | Bipolar | DIP | NPN | — | — | 2.5Вт | 500pcs | 40В | 1А | 250МГц | 150 | ||||||||||
Transistor KP103M Au
#10318
|
22268 | СНГ | — |
12 грн.
|
|
— | P-FET Structure Maximum drain-source voltage Usi, V 10 Maximum gate-source voltage Uzi max., V 17 Maximum dissipated power Psi max., W 0.12 The slope of the characteristic S, mA /V 1.3 ... 4.4 Housing KT-17 | 0.7 | — | Field | DIP | — | — | — | 125мВт | 200pcs | — | — | — | — | |||||||||
| 22390 | СНГ | — |
45 грн.
|
|
— | The assembly is designed for use in the input stages of differential low-noise amplifiers of low frequency and direct current with high input impedance. | 2 | — | Field | DIP | MOS n-channel | 25В | — | 50мВт | 40pcs | — | — | — | — | ||||||||||
Transistor TIP110
#10447
|
22460 | SMG | — |
7 грн.
|
|
— | 2.5 | TO220 | Bipolar | DIP | NPN | — | — | 50Вт | 50pcs | 60В | 2А | — | 1000 | ||||||||||
Transistor TIP130
#10451
|
22467 | ST MICROELECTRONICS | — |
10 грн.
|
|
— | 2.5 | TO220 | Bipolar | DIP | NPN | — | — | 70Вт | 50pcs | 60В | 8А | — | 1000 | ||||||||||
Transistor TIP34C
#10456
|
22477 | ST MICROELECTRONICS | — |
31 грн.
|
|
— | 7.5 | TO247 | Bipolar | DIP | PNP | — | — | 80Вт | 30pcs | 100В | 10А | — | 100 | ||||||||||
Transistor 2SC3832
#10469
|
22494 | SANKEN | — |
9 грн.
|
|
— | 2.5 | TO220 | Bipolar | DIP | NPN | — | — | 50Вт | 50pcs | 400В | 7А | 10МГц | 30 | ||||||||||
Transistor 2SC1061
#10470
|
22495 | MOSPEC | — |
9.50 грн.
|
|
— | 2.5 | TO220 | Bipolar | DIP | NPN | — | — | 25Вт | 50pcs | 50В | 3А | 5МГц | 320 | ||||||||||
Transistor 2SC2482
#10485
|
22530 | TOSHIBA | — |
2.50 грн.
|
|
— | 0.5 | TO92L | Bipolar | DIP | NPN | — | — | 900мВт | 200pcs | 300В | 100мА | 50МГц | 150 | ||||||||||
Transistor BC184C
#10486
|
22531 | CDIL | — |
2 грн.
|
|
— | 0.3 | TO92 | Bipolar | DIP | NPN | — | — | 350мВт | 200pcs | 30В | 100мА | 280МГц | 900 |
