Transistor IRF640N
| Manufacturer | INTERNATIONAL RECTIFIER |
| SKU | |
| Categories | Field effect transistors |
Features
| Type | Description | |
|---|---|---|
| Brand name | INTERNATIONAL RECTIFIER | |
| Structure | MOS n-channel | |
| Transistor type | Field | |
| Drain-source voltage | 200В | |
| Drain current | 18А | |
| Power | 150Вт | |
| Transistor case type | TO220AB | |
| Mounting type | DIP | |
| Weight g. | 2.8 | |
| Factory packaging | 50pcs |
Description
Datasheet
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Chip NE555P (=NE555, NE555N, KR1006VI1)
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Transistor BC557B
1 грн.
|
|
Dinistor DB3 (32v) (=BR100-03)
1.50 грн.
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|
Socket m/s, pitch 2.54mm SCS-8
1.50 грн.
|
|
Breadboard 5*7 cm getinaks without tinning
7 грн.
|
|
Diode bridge KTS405E
6 грн.
|
|
Diode UF4007 (1.0A/1000V 75ns)
2 грн.
|
|
Transistor IRF3205
25 грн.
|
|
Transistor MP40A
5 грн.
|
|
Diode R3000F (0.2A, 3000V)
4 грн.
|
|
Diode Bridge MB6S
2 грн.
|
|
Triac BT137x-600E
18 грн.
|