IRFD123
| Manufacturer | INTERNATIONAL RECTIFIER |
| Categories | Field effect transistors |
Features
| Type | Description | |
|---|---|---|
| Brand name | INTERNATIONAL RECTIFIER | |
| Structure | MOS n-channel | |
| Transistor type | Field | |
| Drain-source voltage | 80В | |
| Drain current | 1.1А | |
| Power | 1.3Вт | |
| Transistor case type | DIP4 | |
| Mounting type | DIP | |
| Weight g. | 0.5 | |
| Factory packaging | 100 pieces. |
Description
Datasheet