IRFP254A
| Manufacturer | SAMSUNG |
| Categories | Field effect transistors |
Features
| Type | Description | |
|---|---|---|
| Brand name | SAMSUNG | |
| Structure | MOS n-channel | |
| Transistor type | Field | |
| Drain-source voltage | 250В | |
| Drain current | 25А | |
| Power | 220Вт | |
| Transistor case type | TO3P | |
| Mounting type | DIP | |
| Weight g. | 7 | |
| Factory packaging | 30pcs |
Description
Datasheet