Transistor KT840B
| Manufacturer | СНГ |
| SKU | |
| Categories | Domestic transistors |
Features
| Type | Description | |
|---|---|---|
| Brand name | СНГ | |
| Structure | NPN | |
| Transistor type | Bipolar | |
| Power | 60Вт | |
| Transistor case type | TO3 | |
| Mounting type | DIP | |
| Weight g. | 17.5 | |
| Factory packaging | 40pcs | |
| Collector-emitter voltage | 350В | |
| Collector current | 6А | |
| Current gain | 10 | |
| Frequency | 8МГц |
Description
Main technical characteristics of the KT840B transistor:
• Transistor structure: npn;
• Ркт max - Constant power dissipation of the collector with heat sink: 60 W;
• fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 8 MHz;
• Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 750 V;
• Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V;
• Iк max - Maximum permissible direct collector current: 6 A;
• Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 3 mA (750V);
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 10;
• Rke us - Saturation resistance between collector and emitter: no more than 0.75 Ohm.