Transistor P213

Manufacturer СНГ
SKU 26928
Categories Domestic transistors
Features
Type Description
Brand name СНГ
Structure PNP
Transistor type Bipolar
Power 11,5Вт
Mounting type DIP
Weight g. 10
Factory packaging 20pcs
Collector-emitter voltage 40В
Collector current
Current gain 50
Frequency 0,15МГц
Description

The main technical characteristics of the transistor P213:
• Transistor structure: pnp
• Рк t max - Constant power dissipation of the collector with a heat sink: 11.5 W;
• fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz;
• Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 45 V;
• Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V;
• Ik max - Maximum allowable DC collector current: 5 A;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20...50;
• Rke us - Saturation resistance between collector and emitter: no more than 0.16 Ohm.