Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Working voltage, V | Transistor case type | Transistor type | Mounting type | Appointment | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Capacity | Accuracy | Height (length), mm | Outside diameter, mm | Inner diameter, mm | Permeability | Core type | Material |
|---|
Transistor P401
#14476
|
26687 | СНГ | — |
8 грн.
|
|
— | Transistors P401 - germanium, amplifying low-power, high-frequency, structures - pnp. Designed for use in amplifying and generator stages of shortwave and ultrashortwave radio transmitting devices. | 1.8 | — | — | — | КТЮ-3-6 | Bipolar | DIP | — | PNP | 100мВт | 100 pieces. | 10В | 20мА | 30МГц | 300 | — | — | — | — | — | — | — | — | |||||||||||
Transistor GT308A
#14475
|
26686 | СНГ | — |
7 грн.
|
|
— | Transistors GT308A germanium diffusion-alloy structures pnp universal. Designed for use in oscillators, power amplifiers, pulse devices. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | PNP | 150мВт | 100 pieces. | 15В | 50мА | 100МГц | 75 | — | — | — | — | — | — | — | — | |||||||||||
Transistor GT320B
#14474
|
26685 | СНГ | — |
12 грн.
|
|
— | Transistors GT320B germanium diffusion-alloy structures pnp switching. Designed for use in high frequency amplifiers and switching devices. | 1.8 | — | — | — | КТЮ-3-6 | Bipolar | DIP | — | PNP | 200мВт | 100 pieces. | 11В | 150мА | 80МГц | 120 | — | — | — | — | — | — | — | — | |||||||||||
Chip KR504NT3V
#14462
|
26674 | СНГ | — |
7 грн.
|
|
— | Made on the basis of field-effect transistors with pn junction and p-channel. It is a low-current matched pair of field-effect transistors designed for use in the input stages of DC amplifiers, in differential and operational amplifiers and switches. | 0.5 | — | DIP8 | — | — | — | DIP | Transistor Assembly | — | — | 200pcs | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
| 26670 | СНГ | — |
12 грн.
|
|
— | M600NN, K32x20x6, Ring ferrite core. | 15 | — | — | — | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | 6 | 32 | 20 | М600НН | Ring | Ferrite | ||||||||||||
| 26668 | СНГ | — |
94 грн.
|
|
— | M350NNI, K61x36x13, Ring ferrite core. | 120 | — | — | — | — | — | — | — | — | — | 30pcs | — | — | — | — | — | — | 13 | 61 | 36 | М350НН | Ring | Ferrite | ||||||||||||
Chip K224UN4
#14447
|
26659 | СНГ | — |
12 грн.
|
|
— | A low-frequency amplifier for use in low-frequency radio communications equipment as a ULF with automatic gain control, as well as a generator of sinusoidal oscillations with a stable amplitude. | 1 | — | ZIP-9 | — | — | — | DIP | Amplifiers | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Chip KR531TV9 (=SN74S112)
#14446
|
26658 | СНГ | — |
6 грн.
|
|
— | Double JK flip-flop. | 1.1 | — | DIP16 | — | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Chip KM133LA1
#14444
|
26656 | СНГ | — |
8 грн.
|
|
— | Two logical elements 4I-NOT, one expandable by OR. | 0.5 | — | SO14 | — | — | — | SMD | Logics | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Chip K145IK1807
#14438
|
26649 | СНГ | — |
20 грн.
|
|
— | A microcontroller designed to control peripheral devices. | 4 | — | — | — | — | — | DIP | Microcontrollers | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Chip KR145IK1908
#14433
|
26642 | СНГ | — |
20 грн.
|
|
— | Timer programmer. | 4 | — | — | — | — | — | DIP | Timers | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Chip K145VV7P
#14432
|
26641 | СНГ | — |
20 грн.
|
|
— | Input device 8-lower digits. | 4 | — | — | — | — | — | DIP | Interfaces | — | — | 32pcs | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Chip K145IK1303A
#14430
|
26639 | СНГ | — |
20 грн.
|
|
— | arithmetic processor. | 3.7 | — | — | — | — | — | DIP | Microcontrollers | — | — | 32pcs | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Chip K145IK1802
#14428
|
26637 | СНГ | — |
20 грн.
|
|
— | Printer management. | 3.2 | — | — | — | — | — | DIP | Microcontrollers | — | — | 32pcs | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Chip K145IK1801
#14427
|
26636 | СНГ | — |
20 грн.
|
|
— | Controller for interfacing computing facilities with sensors of the control and measuring complex. | 3.2 | — | — | — | — | — | DIP | Microcontrollers | — | — | 32pcs | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Chip K145IK1914
#14426
|
26635 | СНГ | — |
25 грн.
|
|
— | Control microprocessor. | 3.2 | — | — | — | — | — | DIP | Microcontrollers | — | — | 32pcs | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Transistor KT326BM
#14421
|
26630 | СНГ | — |
3 грн.
|
|
— | Transistors KT326BM silicon epitaxial-planar structures pnp amplifying, high-frequency. Designed for use in high and ultra high frequency amplifiers and switching devices. | 0.3 | — | — | — | TO92 | Bipolar | DIP | — | PNP | 200мВт | 1000pcs | 15В | 50мА | 250МГц | 160 | — | — | — | — | — | — | — | — | |||||||||||
Transistor KT859A
#14420
|
26629 | СНГ | — |
12 грн.
|
|
— | Transistor KT859A silicon mezaplanar structure npn switching. Designed for use in amplifiers and switching devices. | 2.5 | — | — | — | TO220 | Bipolar | DIP | — | NPN | 40Вт | 100 pieces. | 800В | 3А | 10МГц | 10 | — | — | — | — | — | — | — | — | |||||||||||
Transistor 1T901A
#14419
|
26628 | СНГ | — |
30 грн.
|
|
— | Transistors germanium diffusion-alloy pnp switching high-frequency powerful. | 25 | — | — | — | — | Bipolar | DIP | — | PNP | 15Вт | 20pcs | 50В | 10А | 30МГц | 60 | — | — | — | — | — | — | — | — | |||||||||||
Transistor KT850A
#14418
|
26627 | СНГ | — |
22 грн.
|
|
— | Transistors KT850A silicon mezaplanar structures npn amplifying. Designed for use in power amplifiers, switching devices. | 2.5 | — | — | — | TO220 | Bipolar | DIP | — | NPN | 25Вт | 100 pieces. | 200В | 2А | 20МГц | 200 | — | — | — | — | — | — | — | — | |||||||||||
Transistor KT854A
#14417
|
26626 | СНГ | — |
20 грн.
|
|
— | Transistors KT854A silicon epitaxial-planar structures npn amplifying. Designed for use in converters, linear stabilizers. | 2.5 | — | — | — | TO220 | Bipolar | DIP | — | NPN | 60Вт | 100 pieces. | 500В | 10А | — | 20 | — | — | — | — | — | — | — | — | |||||||||||
Transistor KT865A
#14416
|
26625 | СНГ | — |
80 грн.
|
|
— | Transistor KT865A silicon epitaxial-planar structure pnp pulse. Designed for use in secondary power supplies, converters, end stages of audio frequency amplifiers, voltage stabilizers. | 16 | — | — | — | TO3 | Bipolar | DIP | — | PNP | 100Вт | 20pcs | 200В | 10А | 15МГц | 200 | — | — | — | — | — | — | — | — | |||||||||||
Transistor KT829A
#14414
|
26622 | СНГ | — |
18 грн.
|
|
— | Transistors KT829A silicon mezaplanar structures npn compound amplifying. Designed for use in low-frequency amplifiers, switching devices. | 2.5 | — | — | — | TO220 | Bipolar | DIP | — | NPN | 60Вт | 200pcs | 100В | 8А | 4МГц | 750 | — | — | — | — | — | — | — | — | |||||||||||
Transistor KT855A
#14413
|
26621 | СНГ | — |
16 грн.
|
|
— | KT855A transistors are silicon epitaxial-planar structures pnp amplifying. Designed for use in converters, linear voltage stabilizers. | 2.5 | — | — | — | TO220 | Bipolar | DIP | — | PNP | 40Вт | 100 pieces. | 200В | 5А | 5МГц | 20 | — | — | — | — | — | — | — | — | |||||||||||
Transistor KT605AM
#14412
|
26620 | СНГ | — |
4 грн.
|
|
— | Transistor silicon mezaplanar structure npn. Designed for use in amplifiers, pulse and high-frequency switching devices. | 0.7 | — | — | — | TO126 | Bipolar | DIP | — | NPN | 400мВт | 200pcs | 250В | 100мА | 40МГц | 40 | — | — | — | — | — | — | — | — | |||||||||||
Transistor KT819B
#14409
|
26617 | СНГ | — |
16 грн.
|
|
— | Transistor silicon mesaepitaxial-planar structure npn switching. Designed for use in amplifiers and switching devices. | 2.5 | — | — | — | TO220 | Bipolar | DIP | — | NPN | 60Вт | 100 pieces. | 50В | 10А | 3МГц | 20 | — | — | — | — | — | — | — | — | |||||||||||
| 26610 | СНГ | — |
10 грн.
|
— | K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. | 4 | Flexible Leads | — | 250 | — | — | DIP | — | — | — | 100 pieces. | — | — | — | — | 46nF (0.046µF) | 0,5 % | — | — | — | — | — | — | |||||||||||||
| 26606 | СНГ | — |
6 грн.
|
— | K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. | 2 | Flexible Leads | — | 250 | — | — | DIP | — | — | — | 100 pieces. | — | — | — | — | 12.7nF ((0.0127µF) | 1 % | — | — | — | — | — | — | |||||||||||||
| 26602 | СНГ | — |
6 грн.
|
— | K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. | 1.5 | Flexible Leads | — | 250 | — | — | DIP | — | — | — | 200pcs | — | — | — | — | 1.2nF (1200pF) | 1 % | — | — | — | — | — | — | |||||||||||||
| 26599 | СНГ | — |
7 грн.
|
— | K71-7V single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. | 3 | Flexible Leads | — | 250 | — | — | DIP | — | — | — | 100 pieces. | — | — | — | — | 16.05nF (0.01605µF) | 0,5 % | — | — | — | — | — | — |
