Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Working voltage, V | Transistor case type | Transistor type | Mounting type | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Capacity | Accuracy |
|---|
Chip K145IK1914
#14426
|
26635 | СНГ | — |
25 грн.
|
|
— | Control microprocessor. | 3.2 | — | — | — | — | — | DIP | — | — | Microcontrollers | — | — | — | 32pcs | — | — | — | — | — | — | |||||||
Transistor KT326BM
#14421
|
26630 | СНГ | — |
3 грн.
|
|
— | Transistors KT326BM silicon epitaxial-planar structures pnp amplifying, high-frequency. Designed for use in high and ultra high frequency amplifiers and switching devices. | 0.3 | — | — | — | TO92 | Bipolar | DIP | — | — | — | — | PNP | 200мВт | 1000pcs | 15В | 50мА | 250МГц | 160 | — | — | |||||||
Transistor KT859A
#14420
|
26629 | СНГ | — |
12 грн.
|
|
— | Transistor KT859A silicon mezaplanar structure npn switching. Designed for use in amplifiers and switching devices. | 2.5 | — | — | — | TO220 | Bipolar | DIP | — | — | — | — | NPN | 40Вт | 100 pieces. | 800В | 3А | 10МГц | 10 | — | — | |||||||
Transistor 1T901A
#14419
|
26628 | СНГ | — |
30 грн.
|
|
— | Transistors germanium diffusion-alloy pnp switching high-frequency powerful. | 25 | — | — | — | — | Bipolar | DIP | — | — | — | — | PNP | 15Вт | 20pcs | 50В | 10А | 30МГц | 60 | — | — | |||||||
Transistor KT850A
#14418
|
26627 | СНГ | — |
22 грн.
|
|
— | Transistors KT850A silicon mezaplanar structures npn amplifying. Designed for use in power amplifiers, switching devices. | 2.5 | — | — | — | TO220 | Bipolar | DIP | — | — | — | — | NPN | 25Вт | 100 pieces. | 200В | 2А | 20МГц | 200 | — | — | |||||||
Transistor KT854A
#14417
|
26626 | СНГ | — |
20 грн.
|
|
— | Transistors KT854A silicon epitaxial-planar structures npn amplifying. Designed for use in converters, linear stabilizers. | 2.5 | — | — | — | TO220 | Bipolar | DIP | — | — | — | — | NPN | 60Вт | 100 pieces. | 500В | 10А | — | 20 | — | — | |||||||
Transistor KT865A
#14416
|
26625 | СНГ | — |
80 грн.
|
|
— | Transistor KT865A silicon epitaxial-planar structure pnp pulse. Designed for use in secondary power supplies, converters, end stages of audio frequency amplifiers, voltage stabilizers. | 16 | — | — | — | TO3 | Bipolar | DIP | — | — | — | — | PNP | 100Вт | 20pcs | 200В | 10А | 15МГц | 200 | — | — | |||||||
Transistor KT829A
#14414
|
26622 | СНГ | — |
18 грн.
|
|
— | Transistors KT829A silicon mezaplanar structures npn compound amplifying. Designed for use in low-frequency amplifiers, switching devices. | 2.5 | — | — | — | TO220 | Bipolar | DIP | — | — | — | — | NPN | 60Вт | 200pcs | 100В | 8А | 4МГц | 750 | — | — | |||||||
Transistor KT855A
#14413
|
26621 | СНГ | — |
16 грн.
|
|
— | KT855A transistors are silicon epitaxial-planar structures pnp amplifying. Designed for use in converters, linear voltage stabilizers. | 2.5 | — | — | — | TO220 | Bipolar | DIP | — | — | — | — | PNP | 40Вт | 100 pieces. | 200В | 5А | 5МГц | 20 | — | — | |||||||
Transistor KT605AM
#14412
|
26620 | СНГ | — |
4 грн.
|
|
— | Transistor silicon mezaplanar structure npn. Designed for use in amplifiers, pulse and high-frequency switching devices. | 0.7 | — | — | — | TO126 | Bipolar | DIP | — | — | — | — | NPN | 400мВт | 200pcs | 250В | 100мА | 40МГц | 40 | — | — | |||||||
Transistor KT819B
#14409
|
26617 | СНГ | — |
16 грн.
|
|
— | Transistor silicon mesaepitaxial-planar structure npn switching. Designed for use in amplifiers and switching devices. | 2.5 | — | — | — | TO220 | Bipolar | DIP | — | — | — | — | NPN | 60Вт | 100 pieces. | 50В | 10А | 3МГц | 20 | — | — | |||||||
| 26610 | СНГ | — |
10 грн.
|
— | K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. | 4 | Flexible Leads | — | 250 | — | — | DIP | — | — | — | — | — | — | 100 pieces. | — | — | — | — | 46nF (0.046µF) | 0,5 % | |||||||||
| 26606 | СНГ | — |
6 грн.
|
— | K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. | 2 | Flexible Leads | — | 250 | — | — | DIP | — | — | — | — | — | — | 100 pieces. | — | — | — | — | 12.7nF ((0.0127µF) | 1 % | |||||||||
| 26602 | СНГ | — |
6 грн.
|
— | K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. | 1.5 | Flexible Leads | — | 250 | — | — | DIP | — | — | — | — | — | — | 200pcs | — | — | — | — | 1.2nF (1200pF) | 1 % | |||||||||
| 26599 | СНГ | — |
7 грн.
|
— | K71-7V single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. | 3 | Flexible Leads | — | 250 | — | — | DIP | — | — | — | — | — | — | 100 pieces. | — | — | — | — | 16.05nF (0.01605µF) | 0,5 % | |||||||||
| 26592 | СНГ | — |
6 грн.
|
— | K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. | 4 | Flexible Leads | — | 250 | — | — | DIP | — | — | — | — | — | — | 100 pieces. | — | — | — | — | 46.8nF (0.0468µF) | 5 % | |||||||||
| 26582 | СНГ | — |
25 грн.
|
— | K71-7V single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. | 10 | Flexible Leads | — | 250 | — | — | DIP | — | — | — | — | — | — | 50pcs | — | — | — | — | 230nF (0.23µF) | 1 % | |||||||||
Diode bridge KTS402V
#14369
|
26579 | СНГ | — |
20 грн.
|
— | Block of silicon, diffusion diodes. The main technical characteristics of the KTs402V diode: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 400 V. | 5.7 | — | — | — | — | — | DIP | 400V | 1A | — | Diode bridge | — | — | 100 pieces. | — | — | — | — | — | — | ||||||||
Diode bridge KTS405V
#14364
|
26576 | СНГ | — |
7 грн.
|
— | The main technical characteristics of the KTs405V diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 400 V. | 5.2 | — | — | — | — | — | DIP | 400V | 1A | — | Diode bridge | — | — | 500pcs | — | — | — | — | — | — | ||||||||
Chip K118UP1A
#14358
|
26570 | СНГ | — |
8 грн.
|
|
— | High Gain Video Amplifier. | 1 | — | DIP14 | — | — | — | DIP | — | — | Video | — | — | — | 100 pieces. | — | — | — | — | — | — | |||||||
Chip KR531LA12 (=SN74S37)
#14357
|
26569 | СНГ | — |
6 грн.
|
|
— | Four logic elements 2I-NOT with high load capacity. | 1 | — | DIP16 | — | — | — | DIP | — | — | Logics | — | — | — | 200pcs | — | — | — | — | — | — | |||||||
Chip KR198NT11
#14353
|
26563 | СНГ | — |
12 грн.
|
|
— | The microcircuit contains 4 NPN silicon transistors. The microcircuit is used in speed controllers of low-power DC motors. | 1 | — | DIP14 | — | — | — | DIP | — | — | Transistor Assembly | — | — | — | 100 pieces. | — | — | — | — | — | — | |||||||
Chip K174PS4
#14352
|
26561 | СНГ | — |
68 грн.
|
|
— | The K174PS4 microcircuit is a double balanced mixer. It is intended for use as a frequency mixer in the frequency range up to 1000 MHz, a modulator, an amplifier in blocks of channel selectors for UHF TVs. It differs from mixers on discrete devices by the absence or attenuation of components with signal and local oscillator frequencies in the output signal spectrum and good decoupling between the local oscillator circuit and the input. The leakage of the local oscillator voltage to the input of the receiver is 40-50 dB. | 1 | — | DIP14 | — | — | — | DIP | — | — | TV | — | — | — | 20pcs | — | — | — | — | — | — | |||||||
Chip KS531IK1 (=Am25S05)
#14340
|
26548 | СНГ | — |
12 грн.
|
|
— | Fast multiplier 2x4. | 7 | — | DIP24 | — | — | — | DIP | — | — | Logics | — | — | — | 36pcs | — | — | — | — | — | — | |||||||
Chip KR1561LE10 (=CD4025BE)
#14338
|
26545 | СНГ | — |
8 грн.
|
|
— | 3 logical elements 3OR-NOT. | 1 | — | DIP14 | — | — | — | DIP | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | |||||||
Chip KR1561IR15 (=CD40194B)
#14337
|
26544 | СНГ | — |
10 грн.
|
|
— | Reversible shift register. | 1.2 | — | DIP16 | — | — | — | DIP | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | |||||||
Chip K555TM2
#14333
|
26540 | СНГ | — |
8 грн.
|
|
— | Two D flip-flops. | 1 | — | DIP14 | — | — | — | DIP | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | |||||||
Chip KR1100SK2
#14331
|
26539 | СНГ | — |
26 грн.
|
|
— | KR1100SK2 microcircuits are an analog signal sampling and storage device, which, by storing the instantaneous value of the input analog signal by a command received at the logic input, maintains a constant output voltage equal to it for a certain time with high accuracy. The KR1100SK2 includes an input operational amplifier, an output operational amplifier and an analog switch control circuit. | 0.5 | — | DIP8 | — | — | — | DIP | — | — | Logics | — | — | — | 200pcs | — | — | — | — | — | — | |||||||
Chip KR544UD1B
#14330
|
26538 | СНГ | — |
20 грн.
|
|
— | KR544UD2B microcircuits are broadband operational differential amplifiers with high input impedance and increased speed. They are used to create video amplifiers, pulse amplifiers, amplifiers for photodetectors, generators of high-frequency oscillations. | 0.5 | — | DIP8 | — | — | — | DIP | — | — | Amplifiers | — | — | — | 200pcs | — | — | — | — | — | — | |||||||
Chip KR198NT3B
#14329
|
26533 | СНГ | — |
10 грн.
|
|
— | The KR198NT3B microcircuit is a matrix of npn transistors. | 1 | — | DIP14 | — | — | — | DIP | — | — | Transistor Assembly | — | — | — | 100 pieces. | — | — | — | — | — | — |
