Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Pin type Type of shell Working voltage, V Case diameter D, mm Body length L, mm Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Appointment Diode type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Capacity Accuracy Diode design Height (length), mm Outside diameter, mm Inner diameter, mm Permeability Core type Material
26768 СНГ
6 грн.
Capacitors K73-15 polyethylene terephthalate foil sealed isolated. 3 Flexible Leads 250 10 27 DIP 100 pieces. 47nF (0.047µF) 10 %
26765 СНГ
6 грн.
Capacitors K73-15 polyethylene terephthalate foil sealed isolated. 2.8 Flexible Leads 400 10 23 DIP 50pcs 22nF (0.022µF) 5 %
26764 СНГ
5 грн.
Capacitors K73-15 polyethylene terephthalate foil sealed isolated. 2.8 Flexible Leads 400 10 23 DIP 50pcs 22nF (0.022µF) 5 %
26761 СНГ
6 грн.
Capacitors K73-15 polyethylene terephthalate foil sealed isolated. 3.2 Flexible Leads 160 10 27 DIP 100 pieces. 100nF (0.1µF) 5 %
26760 СНГ
4 грн.
Capacitors K73-15 polyethylene terephthalate foil sealed isolated. 1.8 Flexible Leads 160 8 23 DIP 50pcs 47nF (0.047µF) 5 %
26756 СНГ
6 грн.
Capacitors K73-15 polyethylene terephthalate foil sealed isolated. 5 Flexible Leads 250 12 27 DIP 50pcs 100nF (0.1µF) 5 %
26742 СНГ
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
Silicon diode, alloyed, pulsed. The main technical characteristics of the diode D220B: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 50 mA; • Inp and max - Maximum pulse forward current: 0.5 A; • Sd - Total capacitance: 15 pF at Uobr 5 V; • Unp - DC forward voltage: no more than 1.5 V at Inp 50 mA; • Iobr - Constant reverse current: no more than 1 μA at Uobr 100 V. 0.3 DIP D104 100V 50mA Rectifier 100 pieces. single
26734 СНГ
13 грн.
20+11,70 грн.
50+11,05 грн.
100+10,40 грн.
500+7,80 грн.
1000+6,50 грн.
M3000NM, K31x18x7, Ring ferrite core. 16 24pcs 7 31 18 М3000НМ Ring Ferrite
26733 СНГ
92 грн.
20+82,80 грн.
50+78,20 грн.
100+73,60 грн.
500+55,20 грн.
1000+46 грн.
M100NN, K80x50x7.5, Ring ferrite core. 120 50pcs 7,5 80 50 М100НН Ring Ferrite
26730 СНГ
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12,75 грн.
200+12 грн.
The fusible insert holder DVP7 is designed to work in electrical networks with voltage up to 250V DC and AC. 17.5 DIP 200pcs
26728 СНГ
3 грн.
K73-9 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 6.5 Flexible Leads 100 DIP 200pcs 470nF (0.47µF) 10 %
26727 СНГ
2.50 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 2 Flexible Leads 630 DIP 200pcs 68nF (0.068µF) 10 %
26726 СНГ
2 грн.
K73-9 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 2.8 Flexible Leads 100 DIP 200pcs 150nF (0.15µF) 5 %
26724 СНГ
3 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 4 Flexible Leads 250 DIP 200pcs 470nF (0.47µF) 5 %
26723 СНГ
3 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 4 Flexible Leads 250 DIP 200pcs 470nF (0.47µF) 20 %
26722 СНГ
3.50 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 3 Flexible Leads 63 DIP 100 pieces. 2.2µF 10 %
26721 СНГ
3 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 3 Flexible Leads 250 DIP 100 pieces. 680nF (0.68µF) 10 %
26720 СНГ
3 грн.
K73-17V protected polyethylene terephthalate capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 3 Flexible Leads 630 DIP 100 pieces. 100nF (0.1µF) 15 %
26719 СНГ
1.50 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 0.7 Flexible Leads 630 DIP 500pcs 10nF (0.01µF) 20 %
26718 СНГ
2 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 1.2 Flexible Leads 630 DIP 300pcs 22nF (0.022µF) 20 %
26717 СНГ
6 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 5.7 Flexible Leads 63 DIP 100 pieces. 4.7µF 5 %
26716 СНГ
2 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 1.1 Flexible Leads 250 DIP 300pcs 100nF (0.1µF) 10 %
26715 СНГ
2 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 1.6 Flexible Leads 250 DIP 200pcs 150nF (0.15µF) 10 %
26714 СНГ
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Diodes D2D germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the diode D2D: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 16 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 4.5 mA; • Iobr - Constant reverse current: no more than 250 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. 0.3 DIP КД-4 50V 16mA Detector 200pcs single
26705 СНГ
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
Diodes KD243B silicon, diffusion, rectifier. Are intended for transformation of alternating voltage with a frequency up to 70 kHz. The main technical characteristics of the KD243B diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 1 A; • Inp and max - Maximum pulse forward current: 6 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.1 V at Inp 1 A; • Iobr - Constant reverse current: no more than 10 μA at Uobr 100 V. 0.4 DIP КД-4 100V 1A Rectifier 1000pcs single
26702 СНГ
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Two D-flip-flops synchronous with complementary inputs and independent setting to the state of log.0 (R1, R2) and log.1 (S1, S2). 1 DIP14 DIP Logics 100 pieces.
26696 СНГ
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
KT3120AM transistors are silicon epitaxial-planar npn amplifying structures with a normalized noise figure at a frequency of 400 MHz. Designed for use in the input and subsequent stages of microwave amplifiers. The main technical characteristics of the transistor KT3120AM: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 100 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 1800 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 15 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.5 μA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: more than 40; • Sk - Collector junction capacitance: no more than 2 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 8 ps. 0.2 КТ-14 Bipolar SMD NPN 100мВт 20pcs 15В 20мА 40
26690 СНГ
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Germanium transistors, diffusion-alloyed, pnp, amplifying, low-power with a normalized noise figure at a frequency of 1.6 MHz. Are intended for work in amplifying and generator cascades HF cascades. 1.5 КТЮ-3-3 Bipolar DIP PNP 100мВт 100 pieces. 10В 20мА 120МГц 100
26689 СНГ
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor P403A - germanium, amplifying low-power, high-frequency, structures - pnp. 1.8 КТЮ-3-3 Bipolar DIP PNP 100мВт 100 pieces. 10В 20мА 120МГц 200
26688 СНГ
9 грн.
10+8,55 грн.
50+8,10 грн.
100+7,20 грн.
Transistor P403VP - germanium, amplifying low-power, high-frequency, structures - pnp. 1.8 КТЮ-3-3 Bipolar DIP PNP 100мВт 100 pieces. 10В 20мА 120МГц 100