Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Working voltage, V | Case diameter D, mm | Body length L, mm | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Resistance | Resistor power | Accuracy | Resistor housing type | Stabilization voltage | Zener diode housing type | Curve | Working current, A | Material | Plug or socket | Number of contacts | Mechanical installation | Type | Diode design | Height (length), mm | Outside diameter, mm | Inner diameter, mm | Permeability | Core type | Material |
|---|
Transistor 2P903V (=KP903V)
#11966
|
24255 | СНГ | — |
35 грн.
|
|
— | Transistors 2P903V are silicon epitaxial-planar field-effect transistors with an n-type channel and a gate in the form of a reverse-biased pn junction, high-frequency universal. | 4.5 | — | — | — | — | КТ-4-2 | Field | Screw | — | — | — | — | — | MOS n-channel | 20В | 700мА | 6Вт | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor 2T607A-4
#11960
|
24249 | СНГ | — |
160 грн.
|
|
— | Transistors 2T607A-4 silicon epitaxial-planar structures npn generator. Designed for use in generators and amplifiers in sealed equipment. | 0.4 | — | — | — | — | — | Bipolar | SMD | — | — | — | — | — | NPN | — | — | 1.5Вт | 8pcs | 35В | 150мА | 0,7МГц | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor KT611AM
#11959
|
24248 | СНГ | — |
6 грн.
|
|
— | KT611AM Transistors silicon mezaplanar structures npn amplifying. Designed for use in amplifiers and generators. | 1 | — | — | — | — | TO126 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 3Вт | 100 pieces. | 180В | 100мА | 60МГц | 40 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor KT639D
#11958
|
24247 | СНГ | — |
8 грн.
|
|
— | Designed for use in low-frequency amplifiers, power amplifiers, video amplifiers, automotive electronic devices, pulse and switching devices, in computer terminal devices. | 1 | — | — | — | — | TO126 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 1Вт | 100 pieces. | 60В | 1.5А | 80МГц | 160 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor KT604AM
#11957
|
24246 | СНГ | — |
4 грн.
|
|
— | KT604AM Transistors silicon mezaplanarny structures npn. | 1 | — | — | — | — | TO126 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 3Вт | 200pcs | 250В | 200мА | 40МГц | 40 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor KT608B
#11956
|
24245 | СНГ | — |
20 грн.
|
|
— | Transistors KT608B silicon epitaxial-planar structures npn switching. Designed for use in high-speed pulsed and high-frequency devices. | 1.5 | — | — | — | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 500мВт | 100 pieces. | 60В | 400мА | 200МГц | 160 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor 2T602B (=KT602B)
#11955
|
24244 | СНГ | — |
25 грн.
|
|
— | KT602B Transistors silicon planar structures npn. Designed to generate and amplify signals. | 3.2 | — | — | — | — | КТЮ-3-9 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 2.8Вт | 100 pieces. | 100В | 75мА | 150МГц | 220 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor P308
#11954
|
24243 | СНГ | — |
25 грн.
|
|
— | Transistors P308 silicon planar npn switching low-frequency low-power. Designed for use in switching circuits and DC voltage converters. | 1.5 | — | — | — | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 250мВт | 100 pieces. | 120В | 30мА | 20МГц | 90 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
| 24234 | СНГ | — |
1.50 грн.
|
|
— | Resistors MLT-1 permanent metal-film lacquered heat-resistant. Metal-dielectric with a metal-electric conductive layer, uninsulated, for surface mounting. Are intended for work in electric circuits of direct, alternating and impulse currents. | 1.2 | Flexible Leads | — | 6 | 12 | — | — | DIP | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | 150 Ом | 1 W | 10 % | metal film | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 24229 | СНГ | — |
10 грн.
|
|
— | Resistors SP3-9A variable trimming non-wire. Lacquer-film composite single cylindrical, single-turn, with circular movement of the movable system, with fixation on the panel, for surface mounting. L=16mm | 7 | hard conclusions | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | 100 кОм | 0.5 W | 10 % | — | — | — | A | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 24183 | СНГ | — |
0.50 грн.
|
|
— | Resistors with a carbon conductive layer. | 0.2 | Flexible Leads | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 200pcs | — | — | — | — | 2,7 кОм | 0.125 W | 5 % | carbon | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Core M1100NMI 7*4*2 toroidal
#11924
|
24176 | СНГ | — |
3 грн.
|
|
— | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | 2 | 7 | 4 | М1100НМИ | Ring | Ferrite | |||||||||
Diode D103A
#11888
|
24141 | СНГ | — |
3 грн.
|
|
— | Diodes silicon D103A, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.4 | — | — | — | — | — | — | DIP | D104 | 30V | 30mA | — | High frequency | — | — | — | — | 200pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | — | — | — | — | — | — | |||||||||
Memory cube KP128/17-M70
#11885
|
24138 | СНГ | — |
1,450 грн.
|
— | Ferrite memory module, 128 16-bit numbers. | 100 | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 1 PC. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Diode D303
#11884
|
24137 | СНГ | — |
10 грн.
|
|
— | Diode germanium alloy. | 10.5 | — | — | — | — | — | — | Screw | — | 150V | 3.0A | — | Rectifier | — | — | — | — | 30pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | — | — | — | — | — | — | |||||||||
Zener diode D815G
#11883
|
24136 | СНГ | — |
6 грн.
|
|
— | Medium power silicon zener diode, 10V The main technical parameters of the Zener diode D815G: • Stabilization voltage spread: 9... 11 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.08%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 1.8 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 800 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Working range of ambient temperature: -60... +125 °С. | 4.2 | — | — | — | — | — | — | Screw | — | — | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | — | — | — | — | 10V | ks620 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Diode KD522B
#11882
|
24135 | СНГ | — |
1 грн.
|
|
— | The main technical characteristics of the KD522B diode: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 100 mA; • Unp - DC forward voltage: no more than 1.1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 2 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 0.004 µs; • Sd - Total capacitance: 4 pF. | 0.2 | — | — | — | — | — | — | DIP | КД-2 | 50V | 100mA | — | Pulse | — | — | — | — | 500pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | — | — | — | — | — | — | |||||||||
Diode D104A
#11881
|
24134 | СНГ | — |
3 грн.
|
|
— | The main technical characteristics of the D104A diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 30 mA; • fd - Operating frequency of the diode: 150 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1 mA; • Iobr - Constant reverse current: no more than 5 μA at Uobr 100 V; • tvoc arr - Reverse recovery time: 0.5 µs; • Sd - Total capacitance: 0.7 pF at Uobr 0.3 V. | 0.5 | — | — | — | — | — | — | DIP | D104 | 100V | 30mA | — | Pulse | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | — | — | — | — | — | — | |||||||||
Diode D226
#11880
|
24133 | СНГ | — |
6 грн.
|
|
— | The main technical characteristics of the diode D226: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 400 V. | 2 | — | — | — | — | — | — | DIP | — | 400V | 300mA | — | Rectifier | — | — | — | — | 200pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | — | — | — | — | — | — | |||||||||
Transistor P702
#11878
|
24131 | СНГ | — |
50 грн.
|
|
— | Transistors P702 silicon mezaplanar structures npn amplifying. Designed for use in the output stages of low-frequency amplifiers, switching devices, converters and DC voltage stabilizers. | 22 | — | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 40Вт | 20pcs | 60В | 2А | 4МГц | 25 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor KT3107L
#11877
|
24130 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | — | — | — | TO92 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 300мВт | 1000pcs | 20В | 200мА | 200МГц | 800 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Transistor KT3107G
#11876
|
24129 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | — | — | — | TO92 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 300мВт | 1000pcs | 25В | 200мА | 200МГц | 220 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Transistor P701
#11874
|
24126 | СНГ | — |
25 грн.
|
|
— | Transistors P701 silicon alloy-diffusion structures npn amplifying low-frequency. Designed for use in amplifiers and generators of radio electronic devices. | 10 | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 10Вт | 20pcs | 40В | 500мА | 20МГц | 40 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Connector RPM7-50Sh-KP-V
#11870
|
24122 | СНГ | — |
55 грн.
|
|
— | RPM7-50Sh-KP-V low-frequency, rectangular, small-sized connectors are designed for operation in electric circuits of direct, alternating with a frequency of up to 3 MHz and pulsed currents at a voltage of up to 150 V and a current of up to 1 A. Connectors are manufactured in all-climatic version V. | 50 | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 10 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | Fork | 50 | per wire | RPM | — | — | — | — | — | — | — | |||||||||
Connector СР-50-287ФВ
#11866
|
24118 | СНГ | — |
32 грн.
|
|
— | 10.5 | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 60pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | Socket | 2 | per wire | SR | — | — | — | — | — | — | — | ||||||||||
Fuse VPB6-13, 5A 5x20
#11851
|
24103 | СНГ | — |
1.50 грн.
|
|
— | Fuses (fusible inserts) are designed to break the electrical circuit if the current in the circuit exceeds the specified one. | 0.9 | — | 250 | 5 | 20 | — | — | DIP | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | 5 | Glass | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Fuse PC-30, 5 A, 250 V
#11849
|
24101 | СНГ | — |
3 грн.
|
|
— | Fuses (fusible inserts) are designed to break the electrical circuit if the current in the circuit exceeds the specified one. | 2 | — | 250 | 7 | 30 | — | — | DIP | — | — | — | — | — | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | — | — | — | — | 5 | Glass | — | — | — | — | — | — | — | — | — | — | — | |||||||||
| 24046 | СНГ | — |
22 грн.
|
|
— | Resistors SP5-3VA variable trimming wire for surface mounting. Square multi-turn (40 turns from minimum to maximum), with a circular movement of the movable contact system, produced by a worm pair. Are intended for work in chains of direct, alternating and impulse currents. | 1.2 | Flexible Leads | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 20pcs | — | — | — | — | 150 Ом | 0.5 W | 10 % | — | — | — | A | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip 129NT1B-1
#11814
|
24044 | СНГ | — |
7 грн.
|
|
— | Differential pair of transistors. | 2.5 | — | — | — | — | — | — | SMD | — | — | — | Transistor Assembly | — | — | — | — | — | 120pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Microcircuit 218GG1-N
#11811
|
224041 | СНГ | — |
22 грн.
|
|
— | Self-oscillating multivibrator. | 3 | — | — | — | — | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 30pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
