Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Pin type Rated capacity, μF Working voltage, V Rated capacity tolerance,% Working temperature, С Case diameter D, mm Body length L, mm Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Appointment Diode type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Capacity Accuracy Stabilization voltage Plug or socket Number of contacts Mechanical installation Type Diode design
24621 СНГ
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Zener diodes 2S133A silicon, alloy, low power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 3...81 mA. 0.8 DIP 300мВт 200pcs 3V3
24620 СНГ
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Zener diodes D814D silicon, alloy, medium power. Designed to stabilize the voltage of 11.5-14.0 V in the stabilization current range of 3...24 mA. Are issued in the glass-to-metal case with flexible conclusions. The type of zener diode is given on the housing. 0.8 DIP 340мВт 200pcs 13V
24618 СНГ
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
K574UD1B The microcircuits are manufactured using combined bipolar field technology (BIFET). Chips K574UD1B are a high-speed operational amplifier with a large input impedance. Designed to build sample-and-hold circuits, high-resistance broadband amplifiers and comparators, broadband oscillators with high output voltage. They do not have an internal correction frequency. 1 DIP Amplifiers 50pcs
24616 СНГ
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistor KT816V silicon mesaepitaxial-planar structure pnp amplifying. 0.7 TO126 Bipolar DIP PNP 25Вт 200pcs 60В 3МГц 25
24610 СНГ
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
The main technical characteristics of the P210A transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 60 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukeo samples - Breakdown voltage collector-emitter at a given collector current and base open circuit: 65 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 25 V; • Ik max - Maximum allowable DC collector current: 12 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 8 mA; • h21E - Static current transfer coefficient for a common emitter circuit in large signal mode: more than 15. 34 Bipolar DIP PNP 60Вт 10 pieces. 65В 12А 15
24609 СНГ
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
The main technical characteristics of the transistor 2T809A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 40 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 5.1 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 400 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 3 A; • Ik and max - The maximum allowable collector pulse current: 5 A; • Iкеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (400 V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 15... 100; • Sk - Collector junction capacitance: no more than 270 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.75 Ohm. 22 КТЮ-3-3 Bipolar DIP NPN 40Вт 20pcs 400В 100
24605 СНГ
9 грн.
50+8,10 грн.
200+7,20 грн.
500+6,30 грн.
The main technical characteristics of the diode 2D202D: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 200 V. 5 Screw КДЮ-11 200V 5A Rectifier 100 pieces. single
24602 СНГ
35 грн.
50+31,50 грн.
200+28 грн.
500+24,50 грн.
The main technical characteristics of the diode D232A: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 400 V. 11 Screw КДЮ-11 400V 10A Rectifier 40pcs single
24601 СНГ
90 грн.
T25-7 Thyristor low-frequency pin design. Thyristors T25-7 are designed to operate in DC and AC circuits of various power electrical installations with a frequency of up to 500 Hz. Are issued in the case with a flexible output. The maximum allowable average direct current in the open state - 25 A Repetitive impulse voltage in the closed state and repetitive impulse reverse voltage - 700 V Cooling air natural or forced. The type designation is given on the case. Dimensions: - total length - 150 mm - hairpin length - 16 mm - thread - M10. 135 Screw 700V 25A 1 PC.
24595 СНГ
20 грн.
The main technical parameters of the thyristor 2U201I: • Maximum DC reverse voltage: 200 V; • Maximum DC voltage in closed state: 200 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. 11 Screw 200V 30A 40pcs
24594 СНГ
15 грн.
The main technical parameters of the thyristor 2U201L: • Maximum DC reverse voltage: 300 V; • Maximum DC voltage in closed state: 300 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. 11 Screw 300V 30A 40pcs
24592 СНГ
20 грн.
Silicon thyristors KU202I are planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. 11 Screw 200V 10A 40pcs
24586 СНГ
2 грн.
K31-11 - mica dummy capacitors - designed to operate in DC, AC, pulsating current circuits and in pulsed modes. Conclusions are flexible wire. Capacitors are intended for hinged and printed wiring. 0.6 Flexible Leads 250 DIP 100 pieces. 470pF 5 %
24585 СНГ
3 грн.
K31-11 - mica dummy capacitors - designed to operate in DC, AC, pulsating current circuits and in pulsed modes. Conclusions are flexible wire. Capacitors are intended for hinged and printed wiring. 1.2 Flexible Leads 500 DIP 100 pieces. 560pF 5 %
24584 СНГ
5 грн.
K31-11 - mica dummy capacitors - designed to operate in DC, AC, pulsating current circuits and in pulsed modes. Conclusions are flexible wire. Capacitors are intended for hinged and printed wiring. 3.2 Flexible Leads 500 DIP 100 pieces. 10nF (0.01µF) 5 %
24530 СНГ
1 грн.
K73-9 polyethylene terephtalant foil capacitors. Are intended for work in chains of direct, alternating, and pulsating currents. 0.4 Flexible Leads 100 DIP 300pcs 3.3nF (3300pF) 10 %
24481 СНГ
17 грн.
10+16,15 грн.
20+15,30 грн.
50+14,45 грн.
100+13,60 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 14 DIP 80pcs Fork 11 To the body RP
24480 СНГ
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
Designed for operation in electrical circuits of direct, variable frequency up to 3 MHz and pulse currents up to 1550 V. Maximum operating current per contact, 15A. 6.5 DIP 100 pieces. Fork 7 To the body RP
24479 СНГ
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 5.7 DIP 80pcs Socket 7 To the body RP
24475 СНГ
3 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 4.5 Flexible Leads 250 DIP 50pcs 1µF 10 %
24474 СНГ
5 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 5.7 Flexible Leads 63 DIP 50pcs 4.7µF 10 %
24464 СНГ
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
KP327A silicon planar transistor with two insulated gates protected by diodes and an n-type channel 0.3 КТ-29 Field SMD MOS n-channel 14В 30мА 200мВт 100 pieces.
24462 СНГ
70 грн.
10+63 грн.
50+59,50 грн.
100+56 грн.
75 DIP 10 pieces.
24452 СНГ
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
Diodes D214 silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. 13 Screw КДЮ-11 100V 10A Rectifier 40pcs single
24450 СНГ
28 грн.
10+25,20 грн.
20+23,80 грн.
50+22,40 грн.
6ZH4P high frequency pentode. Designed to amplify high frequency voltage. 13 DIP 100 pieces.
24318 СНГ
6 грн.
K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. 1.8 Flexible Leads 250 DIP 200pcs 4.7nF (4700pF) 1 %
24317 СНГ
6 грн.
K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. 1.8 Flexible Leads 250 DIP 200pcs 4.7nF (4700pF) 2 %
24305 СНГ
14 грн.
10+13,30 грн.
20+12,60 грн.
50+11,90 грн.
100+11,20 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 16 DIP 50pcs Fork 15 To the body RP
24296 СНГ
15.20 грн.
50+13,68 грн.
200+12,16 грн.
Capacitors K50-24 aluminum foil sealed polar capacitors with liquid electrolyte. Designed for operation in DC, pulsating current circuits and in pulsed modes, they are used in power supply filters, in shunt decoupling circuits at low frequencies. Capacitors are produced in cylindrical aluminum cases with a plastic cover with multidirectional leads. 13 Flexible Leads 2200 25 30 -25...+70 16 40 DIP 60pcs
24291 СНГ
27.30 грн.
50+24,57 грн.
200+21,84 грн.
Capacitors K50-24 aluminum foil sealed polar capacitors with liquid electrolyte. Designed for operation in DC, pulsating current circuits and in pulsed modes, they are used in power supply filters, in shunt decoupling circuits at low frequencies. Capacitors are produced in cylindrical aluminum cases with a plastic cover with multidirectional leads. 19 Flexible Leads 2200 40 +80% -20% -25...+70 16 56 DIP 60pcs