Brand «СНГ»

Results: 4144

	MPN	Article	Brand	In stock	Price	Discounts	Quantity	Description	Weight g.	Pin type	Type of shell	Working voltage, V	Transistor case type	Transistor type	Mounting type	Type of shell	Urev. max, V	Ipr. max.	Ipr. imp. max.	Appointment	Diode type	Structure	Drain-source voltage	Drain current	Power	Factory packaging	Collector-emitter voltage	Collector current	Frequency	Current gain	Capacity	Accuracy	Stabilization voltage	Zener diode housing type	Color	Diode design

LED indicator ALS324B1 Au

#12268

24650

СНГ

—

40 грн.

—

Single-digit alphanumeric indicators ALS324B1 with a digit height of 7.5 mm from seven segments with a decimal point. They are made on the basis of gallium-phosphorus-arsenic LED structures using epitaxial-diffusion technology.

1.6

—

DIP

—

20pcs

—

Red

—

Transistor KP303E Au

#12267

24649

СНГ

—

20 грн.

10+	19 грн.
50+	18 грн.
100+	16 грн.

—

KP303E silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel.

0.4

—

КТ-1

Field

DIP

—

MOS n-channel

25В

20мА

200мВт

100 pieces.

—

Transistor KT817V

#12266

24648

СНГ

—

12 грн.

10+	11,40 грн.
50+	10,80 грн.
100+	9,60 грн.

—

Transistor KT817V silicon mesa-epitaxial-planar structure npn amplifying.

0.7

—

TO126

Bipolar

DIP

—

NPN

—

25Вт

200pcs

60В

3А

3МГц

—

Transistor KT817A

#12265

24647

СНГ

—

10 грн.

10+	9,50 грн.
50+	9 грн.
100+	8 грн.

—

Transistor KT817A silicon mesa-epitaxial-planar structure npn amplifying.

0.7

—

TO126

Bipolar

DIP

—

NPN

—

25Вт

200pcs

40В

3А

3МГц

—

Transistor KT940B

#12264

24646

СНГ

—

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

—

Silicon epitaxial-planar bipolar structure npn amplifying.

0.7

—

TO126

Bipolar

DIP

—

NPN

—

10Вт

200pcs

250В

100мА

90МГц

—

Chip KR544UD1A

#12263

24645

СНГ

—

20 грн.

10+	19 грн.
50+	18 грн.
100+	16 грн.

—

KR544UD1A microcircuits are operational differential amplifiers with high input resistance and low input currents, with internal frequency correction, which ensures stable operation in any negative feedback modes, including integrator and voltage follower modes.

0.5

—

DIP8

—

DIP

—

Amplifiers

—

200pcs

—

Thyristor KU202D1

#12262

24644

СНГ

—

15 грн.

—

Silicon thyristors KU202D1 are planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals.

2.1

—

DIP

—

100V

10A

—

50pcs

—

Transistor KT812V

#12261

24643

СНГ

—

50 грн.

10+	47,50 грн.
50+	45 грн.
100+	40 грн.

—

The main technical characteristics of the transistor KT812V: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 50 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 3 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 200 V (0.1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 7 V; • Ik max - Maximum allowable DC collector current: 8 A; • Ik and max - The maximum allowable collector pulse current: 12 A; • Iкer - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 5 mA (700V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 10; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm.

—

kt-9

Bipolar

DIP

—

NPN

—

50Вт

20pcs

200В

8А

3МГц

—

Capacitor K71-7V 0.2 microfarad 250v 2%

#12254

24636

СНГ

—

18 грн.

—

K71-7V single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes.

7.5

Flexible Leads

—

250

—

DIP

—

50pcs

—

200nF (0.2µF)

2 %

—

Capacitor K71-7 0.2 microfarad 250v 5%

#12253

24635

СНГ

—

15 грн.

—

K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes.

7.5

Flexible Leads

—

250

—

DIP

—

50pcs

—

200nF (0.2µF)

5 %

—

Capacitor K71-7V 0.1 microfarad 250v 5%

#12252

24634

СНГ

—

10 грн.

—

Flexible Leads

—

250

—

DIP

—

75pcs

—

100nF (0.1µF)

5 %

—

Capacitor K71-7 0.1 microfarad 250v 2%

#12251

24633

СНГ

—

12 грн.

—

Flexible Leads

—

250

—

DIP

—

75pcs

—

100nF (0.1µF)

2 %

—

Capacitor K71-7 0.1 microfarad 250v 1%

#12250

24632

СНГ

—

15 грн.

—

Flexible Leads

—

250

—

DIP

—

75pcs

—

100nF (0.1µF)

1 %

—

Chip K142EN6A (K16) Au

#12246

27628

СНГ

—

270 грн.

10+	256,50 грн.
50+	243 грн.
100+	216 грн.

—

The K142EN6A microcircuit is a bipolar voltage regulator with a fixed output voltage of ±15 V and a load current of 200 mA. During operation, it is allowed to connect the load to any one or simultaneously to two inputs (channels) of the microcircuit.

2.5

—

SMD

—

Nutrition

—

5 pieces.

—

Zener diode D818D

#12244

24626

СНГ

—

20 грн.

50+	18 грн.
100+	16 грн.
250+	15 грн.

—

The main technical parameters of the Zener diode D818D: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.002%/°C; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С.

0.8

—

DIP

—

300мВт

100 pieces.

—

kd-8

—

Zener diode 2S156A OS(=KS156A)

#12243

24625

СНГ

—

40 грн.

50+	36 грн.
100+	32 грн.
250+	30 грн.

—

Zener diodes 2S156A silicon, alloy, low power. Designed to stabilize the nominal voltage of 5.6 V in the stabilization current range of 3...55 mA. Are issued in the glass case with flexible conclusions.

0.8

—

DIP

—

300мВт

100 pieces.

—

5V6

—

Zener diode 2S168A (=KS168A) met.

#12242

24624

СНГ

—

4 грн.

50+	3,60 грн.
100+	3,20 грн.
250+	3 грн.

—

Zener diodes 2S168A silicon, alloy, low power. Designed to stabilize the nominal voltage of 6.8 V in the stabilization current range of 3...45 mA.

0.2

—

DIP

—

300мВт

500pcs

—

6V8

—

Zener diode 2S133A (=KS133A)

#12241

24621

СНГ

—

6 грн.

50+	5,40 грн.
100+	4,80 грн.
250+	4,50 грн.

—

Zener diodes 2S133A silicon, alloy, low power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 3...81 mA.

0.8

—

DIP

—

300мВт

200pcs

—

3V3

—

Zener diode D814D

#12240

24620

СНГ

—

3 грн.

50+	2,70 грн.
100+	2,40 грн.
250+	2,25 грн.

—

Zener diodes D814D silicon, alloy, medium power. Designed to stabilize the voltage of 11.5-14.0 V in the stabilization current range of 3...24 mA. Are issued in the glass-to-metal case with flexible conclusions. The type of zener diode is given on the housing.

0.8

—

DIP

—

340мВт

200pcs

—

13V

—

Chip K574UD1B Au

#12238

24618

СНГ

—

60 грн.

10+	57 грн.
50+	54 грн.
100+	48 грн.

—

K574UD1B The microcircuits are manufactured using combined bipolar field technology (BIFET). Chips K574UD1B are a high-speed operational amplifier with a large input impedance. Designed to build sample-and-hold circuits, high-resistance broadband amplifiers and comparators, broadband oscillators with high output voltage. They do not have an internal correction frequency.

—

DIP

—

Amplifiers

—

50pcs

—

Transistor KT816V

#12237

24616

СНГ

—

12 грн.

10+	11,40 грн.
50+	10,80 грн.
100+	9,60 грн.

—

Transistor KT816V silicon mesaepitaxial-planar structure pnp amplifying.

0.7

—

TO126

Bipolar

DIP

—

PNP

—

25Вт

200pcs

60В

3А

3МГц

—

Transistor P210A

#12231

24610

СНГ

—

60 грн.

10+	57 грн.
50+	54 грн.
100+	48 грн.

—

The main technical characteristics of the P210A transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 60 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukeo samples - Breakdown voltage collector-emitter at a given collector current and base open circuit: 65 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 25 V; • Ik max - Maximum allowable DC collector current: 12 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 8 mA; • h21E - Static current transfer coefficient for a common emitter circuit in large signal mode: more than 15.

—

Bipolar

DIP

—

PNP

—

60Вт

10 pieces.

65В

12А

—

Transistor 2T809A (=KT809A)

#12230

24609

СНГ

—

60 грн.

10+	57 грн.
50+	54 грн.
100+	48 грн.

—

The main technical characteristics of the transistor 2T809A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 40 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 5.1 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 400 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 3 A; • Ik and max - The maximum allowable collector pulse current: 5 A; • Iкеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (400 V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 15... 100; • Sk - Collector junction capacitance: no more than 270 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.75 Ohm.

—

КТЮ-3-3

Bipolar

DIP

—

NPN

—

40Вт

20pcs

400В

5А

—

100

—

Diode 2D202D (=KD202D)

#12226

24605

СНГ

—

9 грн.

50+	8,10 грн.
200+	7,20 грн.
500+	6,30 грн.

—

The main technical characteristics of the diode 2D202D: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 200 V.

—

Screw

КДЮ-11

200V

—

Rectifier

—

100 pieces.

—

single

Diode D232A

#12223

24602

СНГ

—

35 грн.

50+	31,50 грн.
200+	28 грн.
500+	24,50 грн.

—

The main technical characteristics of the diode D232A: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 400 V.

—

Screw

КДЮ-11

400V

10A

—

Rectifier

—

40pcs

—

single

Power thyristor Т25-7

#12222

24601

СНГ

—

90 грн.

—

T25-7 Thyristor low-frequency pin design. Thyristors T25-7 are designed to operate in DC and AC circuits of various power electrical installations with a frequency of up to 500 Hz. Are issued in the case with a flexible output. The maximum allowable average direct current in the open state - 25 A Repetitive impulse voltage in the closed state and repetitive impulse reverse voltage - 700 V Cooling air natural or forced. The type designation is given on the case. Dimensions: - total length - 150 mm - hairpin length - 16 mm - thread - M10.

135

—

Screw

—

700V

25A

—

1 PC.

—

Thyristor 2U201I (=KU201I)

#12218

24595

СНГ

—

20 грн.

—

The main technical parameters of the thyristor 2U201I: • Maximum DC reverse voltage: 200 V; • Maximum DC voltage in closed state: 200 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С.

—

Screw

—

200V

—

30A

—

40pcs

—

Thyristor 2U201L (=KU201L)

#12217

24594

СНГ

—

15 грн.

—

The main technical parameters of the thyristor 2U201L: • Maximum DC reverse voltage: 300 V; • Maximum DC voltage in closed state: 300 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С.

—

Screw

—

300V

—

30A

—

40pcs

—

Thyristor KU202I

#12215

24592

СНГ

—

20 грн.

—

Silicon thyristors KU202I are planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions.

—

Screw

—

200V

10A

—

40pcs

—

Capacitor K31-11-1 470 pF 250V ±5%

#12211

24586

СНГ

—

2 грн.

—

K31-11 - mica dummy capacitors - designed to operate in DC, AC, pulsating current circuits and in pulsed modes. Conclusions are flexible wire. Capacitors are intended for hinged and printed wiring.

0.6

Flexible Leads

—

250

—

DIP

—

100 pieces.

—

470pF

5 %

—