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Brand «СНГ»

Results: 4144

Sort by: New & Popular Name Price Bestsellers Customer rating Date added In stock
MPN Article Brand In stock Price Discounts Quantity Description Weight g. Pin type Type of shell Working voltage, V Transistor case type Transistor type Mounting type Urev. max, V Ipr. max. Appointment Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Capacity Resistance Resistor power Accuracy Stabilization voltage Zener diode housing type Color
Resistor PEV-100 680 Ohm 5%
Resistor PEV-100 680 Ohm 5%
#12310
 24672 СНГ —
100 грн.
 — Resistors PEV-100 constant wire, load for surface mounting. Are intended for work in chains of direct and alternating currents of the radio-electronic equipment. 200 hard conclusions — — — — DIP — — — — — — — 1 PC. — — — — — 680 Ом 100 W 5 % — — —
Resistor PE-150 100 Ohm 10%
Resistor PE-150 100 Ohm 10%
#12309
 24671 СНГ —
120 грн.
 — Enamelled wire resistor with flexible leads, designed for operation in DC and AC circuits in temperate and cold climates. 250 Flexible Leads — — — — DIP — — — — — — — 1 PC. — — — — — 100 Ом 150 W 10 % — — —
Resistor PEVR-100 100 Ohm 5%
Resistor PEVR-100 100 Ohm 5%
#12308
 24670 СНГ —
105 грн.
 — Resistors PEVR-100 constant wire, load, with the ability to control the resistance by moving the collar, for surface mounting. It is intended for work in chains of direct and alternating currents of the radio-electronic equipment. 230 hard conclusions — — — — DIP — — — — — — — 1 PC. — — — — — 100 Ом 100 W 5 % — — —
Transistor P422
Transistor P422
#12280
 24662 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Germanium transistors, diffusion-alloyed, pnp, amplifying, low-power with a normalized noise figure at a frequency of 1.6 MHz. Are intended for work in amplifying and generator cascades HF cascades. 1.5 — — — КТЮ-3-3 Bipolar DIP — — — PNP — — 100мВт 100 pieces. 10В 20мА 50МГц 100 — — — — — — —
Chip K140UD1B Au
Chip K140UD1B Au
#12279
 24661 СНГ —
48 грн.
10+45,60 грн.
50+43,20 грн.
100+38,40 грн.
 — The microcircuits are medium-precision operational amplifiers without frequency correction. 1.3 — — — — — DIP — — Amplifiers — — — — 20pcs — — — — — — — — — — —
Thyristor 2U202L (=KU202L)
Thyristor 2U202L (=KU202L)
#12278
 24660 СНГ —
35 грн.
 — Silicon thyristors 2U202L planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. 11 — — — — — Screw 300V 10A — — — — — 40pcs — — — — — — — — — — —
Transistor KT808A with fasteners
Transistor KT808A with fasteners
#12276
 24658 СНГ —
80 грн.
10+76 грн.
50+72 грн.
100+64 грн.
 — The main technical characteristics of the transistor KT808A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 50W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7.2 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 120 (250 imp.) V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 10 A; • IКеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (120V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 50; • Sk - Collector junction capacitance: no more than 500 pF. 30 — — — КТЮ-3-20 Bipolar DIP — — — NPN — — 50Вт 10 pieces. 120В 10А — 50 — — — — — — —
Transistor KT603B Au
Transistor KT603B Au
#12274
 24656 СНГ —
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
 — The main technical characteristics of the transistor KT603B: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.5 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 30 V (1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 300 mA; • Ik and max - The maximum allowable collector pulse current: 600 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 µA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 7 ohms. 1.5 — — — КТЮ-3-6 Bipolar DIP — — — NPN — — 500мВт 100 pieces. 30В 300мА 200МГц 60 — — — — — — —
Transistor KT601A Au
Transistor KT601A Au
#12273
 24655 СНГ —
45 грн.
10+42,75 грн.
50+40,50 грн.
100+36 грн.
 — The main technical characteristics of the transistor KT601A: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.25 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 40 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given (final) resistance in the base-emitter circuit: 100 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 2 V; • Ik max - Maximum allowable DC collector current: 30 mA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 16; • Sk - Collector junction capacitance: no more than 15 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 600 ps. 2 — — — КТЮ-3-6 Bipolar DIP — — — NPN — — 500мВт 100 pieces. 100В 30мА 40МГц 25 — — — — — — —
Transistor MP37
Transistor MP37
#12272
 24654 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistors MP37 germanium alloyed npn amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. 1.8 — — — КТЮ-3-3 Bipolar DIP — — — NPN — — 150мВт 100 pieces. 15В 20мА 1МГц 30 — — — — — — —
Transistor P28
Transistor P28
#12271
 24653 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistors P28 - germanium, amplifying, low power low-frequency, with a normalized noise figure at a frequency of 1KHz, structures - pnp. 1.8 — — — КТЮ-3-3 Bipolar DIP — — — PNP — — 30мВт 100 pieces. 5В 6mA 5МГц 200 — — — — — — —
Transistor P27
Transistor P27
#12270
 24652 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistors P27 germanium alloyed pnp amplifying low-frequency with a normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. 1.8 — — — КТЮ-3-3 Bipolar DIP — — — PNP — — 30мВт 100 pieces. 5В 6mA 1МГц 100 — — — — — — —
Transistor KT3102A
Transistor KT3102A
#12269
 24651 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
 — The main technical characteristics of the transistor KT3102A: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 250 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz; • Vkbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 50 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 100 mA; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 0.05 μA (50V); • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: 100...250; • Sk - Collector junction capacitance: no more than 6 pF; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz • tk - Time constant of the feedback circuit at high frequency: no more than 100 ps. 0.34 — — — КТ-1 — DIP — — — NPN — — 250мВт 100 pieces. 50В 200мА 300МГц 250 — — — — — — —
LED indicator ALS324B1 Au
LED indicator ALS324B1 Au
#12268
 24650 СНГ —
40 грн.
 — Single-digit alphanumeric indicators ALS324B1 with a digit height of 7.5 mm from seven segments with a decimal point. They are made on the basis of gallium-phosphorus-arsenic LED structures using epitaxial-diffusion technology. 1.6 — — — — — DIP — — — — — — — 20pcs — — — — — — — — — — Red
Transistor KP303E Au
Transistor KP303E Au
#12267
 24649 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — KP303E silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. 0.4 — — — КТ-1 Field DIP — — — MOS n-channel 25В 20мА 200мВт 100 pieces. — — — — — — — — — — —
Transistor KT817V
Transistor KT817V
#12266
 24648 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistor KT817V silicon mesa-epitaxial-planar structure npn amplifying. 0.7 — — — TO126 Bipolar DIP — — — NPN — — 25Вт 200pcs 60В 3А 3МГц 40 — — — — — — —
Transistor KT817A
Transistor KT817A
#12265
 24647 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — Transistor KT817A silicon mesa-epitaxial-planar structure npn amplifying. 0.7 — — — TO126 Bipolar DIP — — — NPN — — 25Вт 200pcs 40В 3А 3МГц 40 — — — — — — —
Transistor KT940B
Transistor KT940B
#12264
 24646 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Silicon epitaxial-planar bipolar structure npn amplifying. 0.7 — — — TO126 Bipolar DIP — — — NPN — — 10Вт 200pcs 250В 100мА 90МГц 25 — — — — — — —
Chip KR544UD1A
Chip KR544UD1A
#12263
 24645 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — KR544UD1A microcircuits are operational differential amplifiers with high input resistance and low input currents, with internal frequency correction, which ensures stable operation in any negative feedback modes, including integrator and voltage follower modes. 0.5 — DIP8 — — — DIP — — Amplifiers — — — — 200pcs — — — — — — — — — — —
Thyristor KU202D1
Thyristor KU202D1
#12262
 24644 СНГ —
15 грн.
 — Silicon thyristors KU202D1 are planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. 2.1 — — — — — DIP 100V 10A — — — — — 50pcs — — — — — — — — — — —
Transistor KT812V
Transistor KT812V
#12261
 24643 СНГ —
50 грн.
10+47,50 грн.
50+45 грн.
100+40 грн.
 — The main technical characteristics of the transistor KT812V: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 50 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 3 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 200 V (0.1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 7 V; • Ik max - Maximum allowable DC collector current: 8 A; • Ik and max - The maximum allowable collector pulse current: 12 A; • Iкer - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 5 mA (700V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 10; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. 16 — — — kt-9 Bipolar DIP — — — NPN — — 50Вт 20pcs 200В 8А 3МГц 10 — — — — — — —
Capacitor K71-7V 0.2 microfarad 250v 2%
Capacitor K71-7V 0.2 microfarad 250v 2%
#12254
 24636 СНГ —
18 грн.
 — K71-7V single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. 7.5 Flexible Leads — 250 — — DIP — — — — — — — 50pcs — — — — 200nF (0.2µF) — — 2 % — — —
Capacitor K71-7 0.2 microfarad 250v 5%
Capacitor K71-7 0.2 microfarad 250v 5%
#12253
 24635 СНГ —
15 грн.
 — K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. 7.5 Flexible Leads — 250 — — DIP — — — — — — — 50pcs — — — — 200nF (0.2µF) — — 5 % — — —
Capacitor K71-7V 0.1 microfarad 250v 5%
Capacitor K71-7V 0.1 microfarad 250v 5%
#12252
 24634 СНГ —
10 грн.
 — K71-7V single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. 5 Flexible Leads — 250 — — DIP — — — — — — — 75pcs — — — — 100nF (0.1µF) — — 5 % — — —
Capacitor K71-7 0.1 microfarad 250v 2%
Capacitor K71-7 0.1 microfarad 250v 2%
#12251
 24633 СНГ —
12 грн.
 — K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. 5 Flexible Leads — 250 — — DIP — — — — — — — 75pcs — — — — 100nF (0.1µF) — — 2 % — — —
Capacitor K71-7 0.1 microfarad 250v 1%
Capacitor K71-7 0.1 microfarad 250v 1%
#12250
 24632 СНГ —
15 грн.
 — K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. 5 Flexible Leads — 250 — — DIP — — — — — — — 75pcs — — — — 100nF (0.1µF) — — 1 % — — —
Chip K142EN6A (K16) Au
Chip K142EN6A (K16) Au
#12246
 27628 СНГ —
270 грн.
10+256,50 грн.
50+243 грн.
100+216 грн.
 — The K142EN6A microcircuit is a bipolar voltage regulator with a fixed output voltage of ±15 V and a load current of 200 mA. During operation, it is allowed to connect the load to any one or simultaneously to two inputs (channels) of the microcircuit. 2.5 — — — — — SMD — — Nutrition — — — — 5 pieces. — — — — — — — — — — —
Zener diode D818D
Zener diode D818D
#12244
 24626 СНГ —
20 грн.
50+18 грн.
100+16 грн.
250+15 грн.
 — The main technical parameters of the Zener diode D818D: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.002%/°C; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. 0.8 — — — — — DIP — — — — — — 300мВт 100 pieces. — — — — — — — — 9V kd-8 —
Zener diode 2S156A OS(=KS156A)
Zener diode 2S156A OS(=KS156A)
#12243
 24625 СНГ —
40 грн.
50+36 грн.
100+32 грн.
250+30 грн.
 — Zener diodes 2S156A silicon, alloy, low power. Designed to stabilize the nominal voltage of 5.6 V in the stabilization current range of 3...55 mA. Are issued in the glass case with flexible conclusions. 0.8 — — — — — DIP — — — — — — 300мВт 100 pieces. — — — — — — — — 5V6 — —
Zener diode 2S168A (=KS168A) met.
Zener diode 2S168A (=KS168A) met.
#12242
 24624 СНГ —
4 грн.
50+3,60 грн.
100+3,20 грн.
250+3 грн.
 — Zener diodes 2S168A silicon, alloy, low power. Designed to stabilize the nominal voltage of 6.8 V in the stabilization current range of 3...45 mA. 0.2 — — — — — DIP — — — — — — 300мВт 500pcs — — — — — — — — 6V8 — —