Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Working voltage, V | Case diameter D, mm | Body length L, mm | Transistor case type | Transistor type | Mounting type | Appointment | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Capacity | Resistance | Resistor power | Accuracy | Resistor housing type | Stabilization voltage | Zener diode housing type | Curve | Plug or socket | Number of contacts | Mechanical installation | Type | Color |
|---|
Transistor 1T311B (=GT311B)
#12648
|
25003 | СНГ | — |
14 грн.
|
|
— | Bipolar germanium transistor GT311B, npn, low power, ultrahigh frequency. | 1.2 | — | — | — | — | — | — | Bipolar | DIP | — | NPN | 150мВт | 100 pieces. | 12В | 50мА | 300МГц | 30 | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor 2T313A (=KT313A)
#12646
|
25002 | СНГ | — |
12 грн.
|
|
— | Transistors 2T313A silicon, epitaxial-planar structures pnp universal. Designed for use in high frequency amplifiers and switching devices. | 0.4 | — | — | — | — | — | КТ-1-7 | Bipolar | DIP | — | PNP | 300мВт | 100 pieces. | 50В | 350мА | 200МГц | 120 | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
| 25001 | СНГ | — |
52 грн.
|
|
— | Transistors 2T608A silicon epitaxial-planar structures npn switching. Designed for use in high-speed pulsed and high-frequency devices. | 1.5 | — | — | — | — | — | КТЮ-3-6 | Bipolar | DIP | — | NPN | 500мВт | 100 pieces. | 60В | 400мА | 200МГц | 80 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Transistor 2T312B (=KT312B)
#12644
|
25000 | СНГ | — |
14 грн.
|
|
— | Transistors 2T312B silicon epitaxial-planar structures npn universal. Designed for use in switching devices, amplifiers and generators. | 0.6 | — | — | — | — | — | КТЮ-3-1 | Bipolar | DIP | — | NPN | 225мВт | 200pcs | 30В | 30мА | 120МГц | 100 | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor 2T312A (=KT312A)
#12643
|
24999 | СНГ | — |
12 грн.
|
|
— | Transistors 2T312A silicon epitaxial-planar structures npn universal. Designed for use in switching devices, amplifiers and generators. | 0.6 | — | — | — | — | — | КТЮ-3-1 | Bipolar | DIP | — | NPN | 225мВт | 200pcs | 30В | 30мА | 80МГц | 100 | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor 2T312V (=KT312V)
#12642
|
24998 | СНГ | — |
15 грн.
|
|
— | Transistors 2T312V silicon epitaxial-planar structures npn universal. Designed for use in switching devices, amplifiers and generators. | 0.6 | — | — | — | — | — | КТЮ-3-1 | Bipolar | DIP | — | NPN | 225мВт | 200pcs | 30В | 30мА | 120МГц | 250 | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
LED indicator ALS340A1
#12626
|
24946 | СНГ | — |
50 грн.
|
— | ALS340A-1 Sign-synthesizing indicators, based on gallium phosphide-arsenide compound, epitaxial-diffusion. Designed for visual indication. The indicators have 35 elements (7 rows of 5 elements per row) and a left decimal point that emit light when exposed to direct current. Various combinations of elements, provided by external switching, allow you to reproduce the numbers from 0 to 9 and the decimal point; as well as letters of the Russian and Latin alphabets and other symbols. • Color of radiation (glow): red; • Character height: 9 mm; • Luminous intensity of one segment: 0.125 mcd; • Constant forward voltage: no more than 2.5 V at 10 mA; • Maximum pulse current: 200 mA; • Maximum allowable DC reverse voltage: 4V. | 1.6 | — | — | — | — | — | — | — | DIP | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | Red | ||||||||||
LED indicator ALS333B1
#12625
|
24945 | СНГ | — |
48 грн.
|
— | Sign-synthesizing indicators ALS333B-1, gallium phosphide, ethtaxial-diffuse. Designed for visual indication. The indicators have seven segments and a decimal point that emit light when exposed to direct current. Various combinations of elements, provided by external switching, allow you to reproduce the numbers from 0 to 9 and the decimal point. • Color of radiation (glow): red; • Character height: 12 mm; • Luminous intensity of one segment: 0.2 mcd; • Constant forward voltage: no more than 2 V at 20 mA; • The maximum allowable direct forward current: 25 mA; • Maximum allowable DC reverse voltage: 5V. | 1.6 | — | — | — | — | — | — | — | DIP | — | — | — | 60pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | Red | ||||||||||
Chip TDA7021
#12623
|
24940 | СНГ | — |
36 грн.
|
|
— | FM path of the radio receiver for receiving and processing signals with frequency modulation of the VHF range, as well as amplifying low-frequency signals. | 1.2 | — | DIP16 | — | — | — | — | — | DIP | radio reception | — | — | 90pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Chip KS561ID1
#12622
|
24935 | СНГ | — |
5 грн.
|
|
— | Binary Decimal Decoder. | 1.3 | — | DIP16 | — | — | — | — | — | DIP | Logics | — | — | 90pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Chip K174XA34
#12621
|
24927 | СНГ | — |
28 грн.
|
|
— | FM path of the radio receiver for receiving and processing signals with frequency modulation of the VHF range, as well as amplifying low-frequency signals. | 1.1 | — | DIP16 | — | — | — | — | — | DIP | radio reception | — | — | 90pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
| 24770 | СНГ | — |
8 грн.
|
— | K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. | 4.2 | Flexible Leads | — | 250 | — | — | — | — | DIP | — | — | — | 100 pieces. | — | — | — | — | 36.45nF (0.03645µF) | — | — | 0,5 % | — | — | — | — | — | — | — | — | — | |||||||||||
| 24733 | СНГ | — |
20 грн.
|
|
— | Variable resistor PPB-1V 1W 470 Ohm 10%. Shaft diameter: 4mm Shaft length: 10mm. | 19 | — | — | — | — | — | — | — | DIP | — | — | — | 5 pieces. | — | — | — | — | — | 470 Ом | 1 W | 10 % | — | — | — | A | — | — | — | — | — | ||||||||||
| 24713 | СНГ | — |
65 грн.
|
|
— | The SSHR32P10EG4N cylindrical low-frequency leaky connector is designed for operation in DC and AC electrical circuits with a frequency of up to 3 MHz and a voltage of up to 850 V. Connectors consist of two parts: plugs and sockets. Plugs and sockets can be both block (instrument) and cable. The block part of the connectors is made without spigots, the cable part with a straight or angled spigot. The joint of the connectors is threaded, the polarization of the cases is single-key. Covering of contacts ― silver. Mounting method - soldering. SShR connectors are manufactured for internal installation in UHL version in accordance with technical specifications ASLR.434410.019 TU (AShDK.434410.079 TU). Main technical characteristics of SSHR32P10EG4N: ― Resistance of contacts..... no more than 1,3 mOhm ― Resistance of isolation..... not less than 5000 MΩ ― The maximum current loading on single contact..... 35 And ― Number of joints-dismemberments ..... 500 ― Interval of working temperatures..... from-60 to +70 °C ― The minimum operating time..... 1000 hours | 120 | — | — | — | — | — | — | — | DIP | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | Socket | 10 | per wire | ShR | — | ||||||||||
RS32BTV connector (male)
#12381
|
24711 | СНГ | — |
40 грн.
|
|
— | Designed for operation in electric circuits of direct, alternating (frequency up to 3 MHz) and pulsed currents. | 13 | — | — | — | — | — | — | — | DIP | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | Fork | 32 | To the body | RS | — | |||||||||
PLK7-E46, lamp panel
#12380
|
24710 | СНГ | — |
25 грн.
|
|
— | Lamp panel PLK7-E46 is intended for insertion of electrovacuum devices (EVD) in radio-electronic equipment. | 14 | — | — | — | — | — | — | — | DIP | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | Socket | 7 | To the body | PL | — | |||||||||
Transistor KT209L
#12370
|
24706 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | — | — | — | — | TO92 | Bipolar | DIP | — | PNP | 350мВт | 1000pcs | 60В | 350мА | — | 60 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Transistor KT3102BM
#12369
|
24704 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | — | — | — | — | TO92 | Bipolar | DIP | — | NPN | 250мВт | 1000pcs | 50В | 200мА | — | 500 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Transistor KT3102VM
#12368
|
24703 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | — | — | — | — | TO92 | Bipolar | DIP | — | NPN | 250мВт | 1000pcs | 30В | 200мА | — | 500 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Connector 2RMD36KPE20Sh5V1
#12367
|
24702 | СНГ | — |
85 грн.
|
|
— | Connector 2RMD36KPE20Sh5V1 cylindrical low-frequency non-hermetic is designed for operation in electric circuits of direct and alternating currents with a frequency of up to 3 MHz at a voltage of up to 700 V. | 63 | — | — | — | — | — | — | — | DIP | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | Fork | 20 | per wire | 2RM | — | |||||||||
Connector ONTS-RG-09-4/14-R1
#12362
|
24697 | СНГ | — |
54 грн.
|
|
— | Connector ONTS-RG-09-4/14-R1 cylindrical low-frequency compact designed for operation in electrical circuits of direct and alternating currents with voltage up to 500 V and frequency up to 3 MHz. | 9.2 | — | — | — | — | — | — | — | DIP | — | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | — | — | Socket | 4 | To the body | ONC | — | |||||||||
| 24696 | СНГ | — |
54 грн.
|
|
— | Connector ONTS-RG-09-4/14-V17 cylindrical low-frequency compact designed for operation in DC and AC electrical circuits with voltage up to 500 V and frequency up to 3 MHz. | 22 | — | — | — | — | — | — | — | DIP | — | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | — | — | Fork | 4 | per wire | ONC | — | ||||||||||
| 24695 | СНГ | — |
18 грн.
|
|
— | Resistors SP5-22 variable tuning wire for printed wiring. Single-element, multi-turn, with rectilinear movement of the movable system. Are intended for work in chains of direct, alternating and impulse currents. | 2.8 | hard conclusions | — | — | — | — | — | — | DIP | — | — | — | 10 pieces. | — | — | — | — | — | 68 Ом | 1 W | 5 % | — | — | — | — | — | — | — | — | — | ||||||||||
Transistor KT603D Au
#12336
|
24686 | СНГ | — |
60 грн.
|
|
— | Transistors KT603D silicon epitaxial-planar structures npn. Designed for use in pulse and switching high-frequency devices. | 1.5 | — | — | — | — | — | КТЮ-3-6 | Bipolar | DIP | — | NPN | 500мВт | 100 pieces. | 10В | 300мА | 200МГц | 80 | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Zener diode 2S147A (=KS147A)
#12335
|
24685 | СНГ | — |
7 грн.
|
|
— | The main technical parameters of the zener diode 2S147A: • Rated stabilization voltage: 4.7 V at Ist 10 mA; • Stabilization voltage spread: 4.23... 5.17 V; • Temperature coefficient of stabilization voltage: -0.09%/°С; • Constant forward voltage: 1 V at Ipr 50 mA; • Zener diode differential resistance: 56 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 58 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | — | — | — | — | DIP | — | — | 300мВт | 100 pieces. | — | — | — | — | — | — | — | — | — | 4V7 | kd-4 | — | — | — | — | — | — | |||||||||
Transistor GT328V Au
#12334
|
24684 | СНГ | — |
30 грн.
|
|
— | The main technical characteristics of the GT328V transistor: • Structure: pnp • Рк max - Constant power dissipation of the collector: 50 mW; • Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 300 MHz; • Uкеr samples - Breakdown voltage collector-emitter at a given collector current and a given (final) resistance in the base-emitter circuit: 15 V at 5 kOhm; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 0.25 V; • Ik max - The maximum allowable DC collector current: 10 mA; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 μA at 15 V; • h21Э - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 10...50 at 5V, 3mA; • Sk - Collector junction capacitance: no more than 1.5 pF at 5V; • Ksh - Transistor noise factor: no more than 7 dB at a frequency of 180 MHz; • tk - Time constant of the feedback circuit at high frequency: no more than 10 ps. | 0.5 | — | — | — | — | — | КТ-1 | Bipolar | DIP | — | PNP | 50мВт | 100 pieces. | 15В | 10мА | 300МГц | 50 | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Zener diode D818E
#12333
|
24683 | СНГ | — |
25 грн.
|
|
— | The main technical parameters of the Zener diode D818E: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 8.1... 8.9 V; • Temperature coefficient of stabilization voltage: +0.001%/°C; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | — | — | — | — | DIP | — | — | 300мВт | 100 pieces. | — | — | — | — | — | — | — | — | — | 9V | kd-8 | — | — | — | — | — | — | |||||||||
Resistor MLT-2 27 kOhm
#12318
|
24679 | СНГ | — |
2.50 грн.
|
|
— | Resistor MLT-2 27 kOhm. | 2.5 | Flexible Leads | — | — | 8 | 17 | — | — | DIP | — | — | — | 200pcs | — | — | — | — | — | 27 кОм | 2 W | 5 % | metal film | — | — | — | — | — | — | — | — | |||||||||
Resistor PEVR-50 75 Ohm 5%
#12313
|
24675 | СНГ | — |
60 грн.
|
— | Resistors PEVR-50 constant wire, load, with the ability to control the resistance by moving the collar, for surface mounting. It is intended for work in chains of direct and alternating currents of the radio-electronic equipment. | 110 | hard conclusions | — | — | — | — | — | — | DIP | — | — | — | 1 PC. | — | — | — | — | — | 75 Ом | 50 W | 5 % | — | — | — | — | — | — | — | — | — | ||||||||||
Resistor PEV-50 100 Ohm 5%
#12312
|
24674 | СНГ | — |
50 грн.
|
— | Resistors PEV-50 constant wire, load for surface mounting. Are intended for work in chains of direct and alternating currents of the radio-electronic equipment. | 110 | hard conclusions | — | — | — | — | — | — | DIP | — | — | — | 1 PC. | — | — | — | — | — | 100 Ом | 50 W | 5 % | — | — | — | — | — | — | — | — | — |
