Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Case diameter D, mm | Body length L, mm | Transistor case type | Transistor type | Mounting type | Urev. max, V | Ipr. max. | Appointment | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Resistance | Resistor power | Accuracy | Resistor housing type | Stabilization voltage | Zener diode housing type | Plug or socket | Number of contacts | Mechanical installation | Type |
|---|
| 24713 | СНГ | — |
65 грн.
|
|
— | The SSHR32P10EG4N cylindrical low-frequency leaky connector is designed for operation in DC and AC electrical circuits with a frequency of up to 3 MHz and a voltage of up to 850 V. Connectors consist of two parts: plugs and sockets. Plugs and sockets can be both block (instrument) and cable. The block part of the connectors is made without spigots, the cable part with a straight or angled spigot. The joint of the connectors is threaded, the polarization of the cases is single-key. Covering of contacts ― silver. Mounting method - soldering. SShR connectors are manufactured for internal installation in UHL version in accordance with technical specifications ASLR.434410.019 TU (AShDK.434410.079 TU). Main technical characteristics of SSHR32P10EG4N: ― Resistance of contacts..... no more than 1,3 mOhm ― Resistance of isolation..... not less than 5000 MΩ ― The maximum current loading on single contact..... 35 And ― Number of joints-dismemberments ..... 500 ― Interval of working temperatures..... from-60 to +70 °C ― The minimum operating time..... 1000 hours | 120 | — | — | — | — | — | DIP | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | Socket | 10 | per wire | ShR | ||||||||||
RS32BTV connector (male)
#12381
|
24711 | СНГ | — |
40 грн.
|
|
— | Designed for operation in electric circuits of direct, alternating (frequency up to 3 MHz) and pulsed currents. | 13 | — | — | — | — | — | DIP | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | Fork | 32 | To the body | RS | |||||||||
PLK7-E46, lamp panel
#12380
|
24710 | СНГ | — |
25 грн.
|
|
— | Lamp panel PLK7-E46 is intended for insertion of electrovacuum devices (EVD) in radio-electronic equipment. | 14 | — | — | — | — | — | DIP | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | Socket | 7 | To the body | PL | |||||||||
Transistor KT209L
#12370
|
24706 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | — | — | TO92 | Bipolar | DIP | — | — | — | PNP | 350мВт | 1000pcs | 60В | 350мА | — | 60 | — | — | — | — | — | — | — | — | — | — | ||||||||||
Transistor KT3102BM
#12369
|
24704 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | — | — | TO92 | Bipolar | DIP | — | — | — | NPN | 250мВт | 1000pcs | 50В | 200мА | — | 500 | — | — | — | — | — | — | — | — | — | — | ||||||||||
Transistor KT3102VM
#12368
|
24703 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | — | — | TO92 | Bipolar | DIP | — | — | — | NPN | 250мВт | 1000pcs | 30В | 200мА | — | 500 | — | — | — | — | — | — | — | — | — | — | ||||||||||
Connector 2RMD36KPE20Sh5V1
#12367
|
24702 | СНГ | — |
85 грн.
|
|
— | Connector 2RMD36KPE20Sh5V1 cylindrical low-frequency non-hermetic is designed for operation in electric circuits of direct and alternating currents with a frequency of up to 3 MHz at a voltage of up to 700 V. | 63 | — | — | — | — | — | DIP | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | Fork | 20 | per wire | 2RM | |||||||||
Connector ONTS-RG-09-4/14-R1
#12362
|
24697 | СНГ | — |
54 грн.
|
|
— | Connector ONTS-RG-09-4/14-R1 cylindrical low-frequency compact designed for operation in electrical circuits of direct and alternating currents with voltage up to 500 V and frequency up to 3 MHz. | 9.2 | — | — | — | — | — | DIP | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | Socket | 4 | To the body | ONC | |||||||||
| 24696 | СНГ | — |
54 грн.
|
|
— | Connector ONTS-RG-09-4/14-V17 cylindrical low-frequency compact designed for operation in DC and AC electrical circuits with voltage up to 500 V and frequency up to 3 MHz. | 22 | — | — | — | — | — | DIP | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | Fork | 4 | per wire | ONC | ||||||||||
| 24695 | СНГ | — |
18 грн.
|
|
— | Resistors SP5-22 variable tuning wire for printed wiring. Single-element, multi-turn, with rectilinear movement of the movable system. Are intended for work in chains of direct, alternating and impulse currents. | 2.8 | hard conclusions | — | — | — | — | DIP | — | — | — | — | — | 10 pieces. | — | — | — | — | 68 Ом | 1 W | 5 % | — | — | — | — | — | — | — | ||||||||||
Transistor KT603D Au
#12336
|
24686 | СНГ | — |
60 грн.
|
|
— | Transistors KT603D silicon epitaxial-planar structures npn. Designed for use in pulse and switching high-frequency devices. | 1.5 | — | — | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | NPN | 500мВт | 100 pieces. | 10В | 300мА | 200МГц | 80 | — | — | — | — | — | — | — | — | — | — | |||||||||
Zener diode 2S147A (=KS147A)
#12335
|
24685 | СНГ | — |
7 грн.
|
|
— | The main technical parameters of the zener diode 2S147A: • Rated stabilization voltage: 4.7 V at Ist 10 mA; • Stabilization voltage spread: 4.23... 5.17 V; • Temperature coefficient of stabilization voltage: -0.09%/°С; • Constant forward voltage: 1 V at Ipr 50 mA; • Zener diode differential resistance: 56 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 58 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | — | — | DIP | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | — | — | — | — | 4V7 | kd-4 | — | — | — | — | |||||||||
Transistor GT328V Au
#12334
|
24684 | СНГ | — |
30 грн.
|
|
— | The main technical characteristics of the GT328V transistor: • Structure: pnp • Рк max - Constant power dissipation of the collector: 50 mW; • Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 300 MHz; • Uкеr samples - Breakdown voltage collector-emitter at a given collector current and a given (final) resistance in the base-emitter circuit: 15 V at 5 kOhm; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 0.25 V; • Ik max - The maximum allowable DC collector current: 10 mA; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 μA at 15 V; • h21Э - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 10...50 at 5V, 3mA; • Sk - Collector junction capacitance: no more than 1.5 pF at 5V; • Ksh - Transistor noise factor: no more than 7 dB at a frequency of 180 MHz; • tk - Time constant of the feedback circuit at high frequency: no more than 10 ps. | 0.5 | — | — | — | КТ-1 | Bipolar | DIP | — | — | — | PNP | 50мВт | 100 pieces. | 15В | 10мА | 300МГц | 50 | — | — | — | — | — | — | — | — | — | — | |||||||||
Zener diode D818E
#12333
|
24683 | СНГ | — |
25 грн.
|
|
— | The main technical parameters of the Zener diode D818E: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 8.1... 8.9 V; • Temperature coefficient of stabilization voltage: +0.001%/°C; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | — | — | DIP | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | — | — | — | — | 9V | kd-8 | — | — | — | — | |||||||||
Resistor MLT-2 27 kOhm
#12318
|
24679 | СНГ | — |
2.50 грн.
|
|
— | Resistor MLT-2 27 kOhm. | 2.5 | Flexible Leads | 8 | 17 | — | — | DIP | — | — | — | — | — | 200pcs | — | — | — | — | 27 кОм | 2 W | 5 % | metal film | — | — | — | — | — | — | |||||||||
Resistor PEVR-50 75 Ohm 5%
#12313
|
24675 | СНГ | — |
60 грн.
|
— | Resistors PEVR-50 constant wire, load, with the ability to control the resistance by moving the collar, for surface mounting. It is intended for work in chains of direct and alternating currents of the radio-electronic equipment. | 110 | hard conclusions | — | — | — | — | DIP | — | — | — | — | — | 1 PC. | — | — | — | — | 75 Ом | 50 W | 5 % | — | — | — | — | — | — | — | ||||||||||
Resistor PEV-50 100 Ohm 5%
#12312
|
24674 | СНГ | — |
50 грн.
|
— | Resistors PEV-50 constant wire, load for surface mounting. Are intended for work in chains of direct and alternating currents of the radio-electronic equipment. | 110 | hard conclusions | — | — | — | — | DIP | — | — | — | — | — | 1 PC. | — | — | — | — | 100 Ом | 50 W | 5 % | — | — | — | — | — | — | — | ||||||||||
Resistor PEV-100 680 Ohm 5%
#12310
|
24672 | СНГ | — |
100 грн.
|
— | Resistors PEV-100 constant wire, load for surface mounting. Are intended for work in chains of direct and alternating currents of the radio-electronic equipment. | 200 | hard conclusions | — | — | — | — | DIP | — | — | — | — | — | 1 PC. | — | — | — | — | 680 Ом | 100 W | 5 % | — | — | — | — | — | — | — | ||||||||||
Resistor PE-150 100 Ohm 10%
#12309
|
24671 | СНГ | — |
120 грн.
|
— | Enamelled wire resistor with flexible leads, designed for operation in DC and AC circuits in temperate and cold climates. | 250 | Flexible Leads | — | — | — | — | DIP | — | — | — | — | — | 1 PC. | — | — | — | — | 100 Ом | 150 W | 10 % | — | — | — | — | — | — | — | ||||||||||
Resistor PEVR-100 100 Ohm 5%
#12308
|
24670 | СНГ | — |
105 грн.
|
— | Resistors PEVR-100 constant wire, load, with the ability to control the resistance by moving the collar, for surface mounting. It is intended for work in chains of direct and alternating currents of the radio-electronic equipment. | 230 | hard conclusions | — | — | — | — | DIP | — | — | — | — | — | 1 PC. | — | — | — | — | 100 Ом | 100 W | 5 % | — | — | — | — | — | — | — | ||||||||||
Transistor P422
#12280
|
24662 | СНГ | — |
8 грн.
|
|
— | Germanium transistors, diffusion-alloyed, pnp, amplifying, low-power with a normalized noise figure at a frequency of 1.6 MHz. Are intended for work in amplifying and generator cascades HF cascades. | 1.5 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | PNP | 100мВт | 100 pieces. | 10В | 20мА | 50МГц | 100 | — | — | — | — | — | — | — | — | — | — | |||||||||
Chip K140UD1B Au
#12279
|
24661 | СНГ | — |
48 грн.
|
|
— | The microcircuits are medium-precision operational amplifiers without frequency correction. | 1.3 | — | — | — | — | — | DIP | — | — | Amplifiers | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Thyristor 2U202L (=KU202L)
#12278
|
24660 | СНГ | — |
35 грн.
|
— | Silicon thyristors 2U202L planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. | 11 | — | — | — | — | — | Screw | 300V | 10A | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 24658 | СНГ | — |
80 грн.
|
|
— | The main technical characteristics of the transistor KT808A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 50W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7.2 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 120 (250 imp.) V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 10 A; • IКеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (120V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 50; • Sk - Collector junction capacitance: no more than 500 pF. | 30 | — | — | — | КТЮ-3-20 | Bipolar | DIP | — | — | — | NPN | 50Вт | 10 pieces. | 120В | 10А | — | 50 | — | — | — | — | — | — | — | — | — | — | ||||||||||
Transistor KT603B Au
#12274
|
24656 | СНГ | — |
60 грн.
|
|
— | The main technical characteristics of the transistor KT603B: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.5 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 30 V (1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 300 mA; • Ik and max - The maximum allowable collector pulse current: 600 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 µA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 7 ohms. | 1.5 | — | — | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | NPN | 500мВт | 100 pieces. | 30В | 300мА | 200МГц | 60 | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor KT601A Au
#12273
|
24655 | СНГ | — |
45 грн.
|
|
— | The main technical characteristics of the transistor KT601A: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.25 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 40 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given (final) resistance in the base-emitter circuit: 100 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 2 V; • Ik max - Maximum allowable DC collector current: 30 mA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 16; • Sk - Collector junction capacitance: no more than 15 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 600 ps. | 2 | — | — | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | NPN | 500мВт | 100 pieces. | 100В | 30мА | 40МГц | 25 | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor MP37
#12272
|
24654 | СНГ | — |
6 грн.
|
|
— | Transistors MP37 germanium alloyed npn amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | NPN | 150мВт | 100 pieces. | 15В | 20мА | 1МГц | 30 | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor P28
#12271
|
24653 | СНГ | — |
6 грн.
|
|
— | Transistors P28 - germanium, amplifying, low power low-frequency, with a normalized noise figure at a frequency of 1KHz, structures - pnp. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | PNP | 30мВт | 100 pieces. | 5В | 6mA | 5МГц | 200 | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor P27
#12270
|
24652 | СНГ | — |
5 грн.
|
|
— | Transistors P27 germanium alloyed pnp amplifying low-frequency with a normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | PNP | 30мВт | 100 pieces. | 5В | 6mA | 1МГц | 100 | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor KT3102A
#12269
|
24651 | СНГ | — |
25 грн.
|
|
— | The main technical characteristics of the transistor KT3102A: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 250 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz; • Vkbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 50 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 100 mA; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 0.05 μA (50V); • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: 100...250; • Sk - Collector junction capacitance: no more than 6 pF; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz • tk - Time constant of the feedback circuit at high frequency: no more than 100 ps. | 0.34 | — | — | — | КТ-1 | — | DIP | — | — | — | NPN | 250мВт | 100 pieces. | 50В | 200мА | 300МГц | 250 | — | — | — | — | — | — | — | — | — | — |
