Brand «СНГ»

Results: 4144

	MPN	Article	Brand	In stock	Price	Discounts	Quantity	Description	Weight g.	Pin type	Type of shell	Working voltage, V	Case diameter D, mm	Transistor case type	Transistor type	Mounting type	Type of shell	Urev. max, V	Ipr. max.	Ipr. imp. max.	Appointment	Diode type	Structure	Power	Factory packaging	Collector-emitter voltage	Collector current	Frequency	Current gain	Capacity	Resistance	Resistor power	Accuracy	Stabilization voltage	Curve	Color	LED type	Diode design

Transistor 1T305B (=GT305B)

#12954

25225

СНГ

—

8 грн.

10+	7,60 грн.
50+	7,20 грн.
100+	6,40 грн.

—

Transistors 1T305B germanium diffusion-alloy structures pnp universal.

0.4

—

Bipolar

DIP

—

PNP

75мВт

100 pieces.

15В

6mA

20МГц

180

—

Transistor 2T908A (=KT908A)

#12953

25224

СНГ

—

120 грн.

10+	114 грн.
50+	108 грн.
100+	96 грн.

—

Transistors 2T908A silicon mezaplanar structures npn switching. Designed for use in stabilizers and voltage converters, pulse modulators. The body is metal with glass insulators and hard leads.

—

КТЮ-3-20

Bipolar

DIP

—

NPN

50Вт

10 pieces.

100В

10А

50МГц

—

Radio lamp 6S52N-V

#12952

25223

СНГ

—

80 грн.

10+	72 грн.
20+	68 грн.
50+	64 грн.

—

6C52H-B Subminiature ceramic-metal triode of increased reliability and mechanical strength. It is intended for amplification and generation of weak signals in devices of wide application. Indirectly heated oxide cathode. Works in any position. Durability not less than 5000 h. Weight no more than 3 g. Location of pins РШ8.

—

DIP

—

20pcs

—

Thermistor ST3-17V 33 Ohm 10%

#12785

25142

СНГ

—

5 грн.

10+	4,50 грн.
50+	4 грн.
100+	3,75 грн.

—

ST3-17 non-sealed disk thermistor is designed to operate in DC, pulsating and alternating current circuits with a frequency of up to 400 Hz in pulsed modes, for measuring and controlling temperature, as well as for temperature compensation of electrical circuit elements with positive temperature coefficients of resistance. Maximum power - 0.3 W. Rated resistance 33 ohm Temperature coefficient of resistance at +20º С - from -3%/°С to 4.5%/°С. Temperature sensitivity coefficient - from 2580 K to 3860 K.

0.3

Flexible Leads

—

DIP

—

200pcs

—

33 Ом

—

10 %

—

Zener diode 2S133A (=KS133A) glass

#12782

25139

СНГ

—

6 грн.

50+	5,40 грн.
100+	4,80 грн.
250+	4,50 грн.

—

Zener diodes 2S133A silicon, alloy, low power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 3...81 mA.

0.3

—

DIP

—

300мВт

200pcs

—

3V3

—

Diode D311

#12781

25138

СНГ

—

3 грн.

50+	2,70 грн.
200+	2,40 грн.
500+	2,10 грн.

—

Germanium, mesadiffusion, pulsed.

0.3

—

DIP

D104

30V

40mA

—

Pulse

—

100 pieces.

—

single

Diode 1D507A (=GD507A)

#12780

25137

СНГ

—

3 грн.

50+	2,70 грн.
200+	2,40 грн.
500+	2,10 грн.

—

Diodes 1D507A germanium, microalloy, pulsed. Designed to limit and modulate pulse signals. The main technical characteristics of the diode 1D507A: • Uopp max - Maximum direct reverse voltage: 20 V; • Inp max - Maximum forward current: 16 mA; • Unp - DC forward voltage: no more than 0.5 V at Inp 5 mA; • Iobr - DC reverse current: no more than 50 µA at Uobr 20 V; • tvoc arr - Reverse recovery time: 0.1 µs; • Sd - Total capacitance: 0.8 pF.

0.25

—

DIP

КД-121

20V

16mA

200mA

—

Pulse

—

100 pieces.

—

single

Microwave diode DK-V2

#12779

25136

СНГ

—

35 грн.

50+	31,50 грн.
200+	28 грн.
500+	24,50 грн.

—

Microwave diodes DK-V2 silicon, point, detector. Designed to detect signals at a wavelength of 10 cm.

0.5

—

DIP

—

Microwave

—

40pcs

—

single

Microwave diode 2A511A

#12778

25135

СНГ

—

90 грн.

50+	81 грн.
200+	72 грн.
500+	63 грн.

—

The main technical parameters of the microwave diode 2A511A: • Total capacitance: 0.55...0.75 pF; • Forward loss resistance: no more than 2 ohms; • Accumulated diode charge: no more than 350 nC; • Constant reverse voltage: 50...200 V; • Constant forward current: 700 mA; • Value of admissible static potential: 100 V.

0.3

—

DIP

—

Microwave

—

20pcs

—

single

Microwave diode D408

#12777

25134

СНГ

—

35 грн.

50+	31,50 грн.
200+	28 грн.
500+	24,50 грн.

—

Diode D408 silicon point mixing. Designed for use in frequency converters in the wavelength range of 4.5..10 s.

2.5

—

DIP

—

Microwave

—

10 pieces.

—

single

Microwave diode D605

#12776

25133

СНГ

—

40 грн.

50+	36 грн.
200+	32 грн.
500+	28 грн.

—

Microwave diode D605 silicon, point, detector. It is intended for detection of pulsed amplitude-modulated signals, indication of pulsed power in the wave range 3.2..10cm.

2.5

—

DIP

—

Microwave

—

10 pieces.

—

single

Thyristor KU101G

#12775

25132

СНГ

—

10 грн.

—

The main technical parameters of the thyristor KU101G: • Maximum DC reverse voltage: 80 V; • Maximum DC voltage in closed state: 80 V; • Maximum repetitive pulse current in the open state: 1 A; • Average pulse current in the open state: 0.075 A; • Voltage in the open state: no more than 2.5 V; • Direct current in the closed state: not less than 0.15 mA; • Constant reverse current: no more than 0.15 mA; • Unlocking direct control current: no more than 12 mA; • Constant unlocking control voltage: 1.5...8 V; • Voltage slew rate in closed state: 100 V/µs; • Turn-on time: 2 ms; • Turn-off time: 35 µs.

—

DIP

—

100 pieces.

—

Transistor GT701A

#12774

25131

СНГ

—

40 грн.

10+	38 грн.
50+	36 грн.
100+	32 грн.

—

Transistor GT701A germanium alloy structure pnp universal. Designed for use in ignition systems of internal combustion engines, as well as in voltage converters.

—

Bipolar

DIP

—

PNP

50Вт

20pcs

100В

12А

—

P605A transistor with flexible leads

#12773

25130

СНГ

—

20 грн.

10+	19 грн.
50+	18 грн.
100+	16 грн.

—

Transistor germanium structure pnp universal. Designed for use in amplifying, generator and pulse stages of low and high frequencies up to 30 MHz.

—

Bipolar

DIP

—

PNP

3Вт

40pcs

40В

1.5А

30МГц

120

—

Bearing 3182112 (60*95*26) (=NN3012K)

#12767

25124

СНГ

—

600 грн.

—

It is used in machine tool building and metalworking equipment. Bearing inner diameter d 60 mm Bearing outer diameter D 95 mm Bearing width H 26 mm Bearing chamfer radius r 2.0 mm Static load rating C0 54000 N Dynamic load rating C 74500 N.

800

—

1 PC.

—

Phototransistor FT-1K gr.1

#12650

25005

СНГ

—

11 грн.

10+	10,45 грн.
50+	9,90 грн.
100+	8,80 грн.

—

The main technical parameters of the phototransistor FT-1K gr.1: • Photosensitive element size: diameter 1.8 mm; • Area of spectral photosensitivity: 0.5...1.12 microns; • Wavelength of maximum spectral distribution of photosensitivity: 0.8...0.9 µm; • Rated operating voltage: 5 V; • Dark current: no more than 3 mkA; • Current photosensitivity: not less than 0.4 µA/lx.

0.3

—

Photo

DIP

—

100 pieces.

—

LED 3L107A

#12649

25004

СНГ

—

54 грн.

50+	48,60 грн.
200+	45,90 грн.
500+	40,50 грн.

—

Emitting diodes, arsenidogallium, mesaepitaxial. Designed to work as sources of infrared radiation.

0.3

—

DIP

—

1 PC.

—

2.4mm round

—

Transistor 1T311B (=GT311B)

#12648

25003

СНГ

—

14 грн.

10+	13,30 грн.
50+	12,60 грн.
100+	11,20 грн.

—

Bipolar germanium transistor GT311B, npn, low power, ultrahigh frequency.

1.2

—

Bipolar

DIP

—

NPN

150мВт

100 pieces.

12В

50мА

300МГц

—

Transistor 2T313A (=KT313A)

#12646

25002

СНГ

—

12 грн.

10+	11,40 грн.
50+	10,80 грн.
100+	9,60 грн.

—

Transistors 2T313A silicon, epitaxial-planar structures pnp universal. Designed for use in high frequency amplifiers and switching devices.

0.4

—

КТ-1-7

Bipolar

DIP

—

PNP

300мВт

100 pieces.

50В

350мА

200МГц

120

—

Transistor 2T608A (=KT608A) Au

#12645

25001

СНГ

—

52 грн.

10+	49,40 грн.
50+	46,80 грн.
100+	41,60 грн.

—

Transistors 2T608A silicon epitaxial-planar structures npn switching. Designed for use in high-speed pulsed and high-frequency devices.

1.5

—

КТЮ-3-6

Bipolar

DIP

—

NPN

500мВт

100 pieces.

60В

400мА

200МГц

—

Transistor 2T312B (=KT312B)

#12644

25000

СНГ

—

14 грн.

10+	13,30 грн.
50+	12,60 грн.
100+	11,20 грн.

—

Transistors 2T312B silicon epitaxial-planar structures npn universal. Designed for use in switching devices, amplifiers and generators.

0.6

—

КТЮ-3-1

Bipolar

DIP

—

NPN

225мВт

200pcs

30В

30мА

120МГц

100

—

Transistor 2T312A (=KT312A)

#12643

24999

СНГ

—

12 грн.

10+	11,40 грн.
50+	10,80 грн.
100+	9,60 грн.

—

Transistors 2T312A silicon epitaxial-planar structures npn universal. Designed for use in switching devices, amplifiers and generators.

0.6

—

КТЮ-3-1

Bipolar

DIP

—

NPN

225мВт

200pcs

30В

30мА

80МГц

100

—

Transistor 2T312V (=KT312V)

#12642

24998

СНГ

—

15 грн.

10+	14,25 грн.
50+	13,50 грн.
100+	12 грн.

—

Transistors 2T312V silicon epitaxial-planar structures npn universal. Designed for use in switching devices, amplifiers and generators.

0.6

—

КТЮ-3-1

Bipolar

DIP

—

NPN

225мВт

200pcs

30В

30мА

120МГц

250

—

LED indicator ALS340A1

#12626

24946

СНГ

—

50 грн.

—

ALS340A-1 Sign-synthesizing indicators, based on gallium phosphide-arsenide compound, epitaxial-diffusion. Designed for visual indication. The indicators have 35 elements (7 rows of 5 elements per row) and a left decimal point that emit light when exposed to direct current. Various combinations of elements, provided by external switching, allow you to reproduce the numbers from 0 to 9 and the decimal point; as well as letters of the Russian and Latin alphabets and other symbols. • Color of radiation (glow): red; • Character height: 9 mm; • Luminous intensity of one segment: 0.125 mcd; • Constant forward voltage: no more than 2.5 V at 10 mA; • Maximum pulse current: 200 mA; • Maximum allowable DC reverse voltage: 4V.

1.6

—

DIP

—

20pcs

—

Red

—

LED indicator ALS333B1

#12625

24945

СНГ

—

48 грн.

—

Sign-synthesizing indicators ALS333B-1, gallium phosphide, ethtaxial-diffuse. Designed for visual indication. The indicators have seven segments and a decimal point that emit light when exposed to direct current. Various combinations of elements, provided by external switching, allow you to reproduce the numbers from 0 to 9 and the decimal point. • Color of radiation (glow): red; • Character height: 12 mm; • Luminous intensity of one segment: 0.2 mcd; • Constant forward voltage: no more than 2 V at 20 mA; • The maximum allowable direct forward current: 25 mA; • Maximum allowable DC reverse voltage: 5V.

1.6

—

DIP

—

60pcs

—

Red

—

Chip TDA7021

#12623

24940

СНГ

—

36 грн.

10+	34,20 грн.
50+	32,40 грн.
100+	28,80 грн.

—

FM path of the radio receiver for receiving and processing signals with frequency modulation of the VHF range, as well as amplifying low-frequency signals.

1.2

—

DIP16

—

DIP

—

radio reception

—

90pcs

—

Chip KS561ID1

#12622

24935

СНГ

—

5 грн.

10+	4,75 грн.
50+	4,50 грн.
100+	4 грн.

—

Binary Decimal Decoder.

1.3

—

DIP16

—

DIP

—

Logics

—

90pcs

—

Chip K174XA34

#12621

24927

СНГ

—

28 грн.

10+	26,60 грн.
50+	25,20 грн.
100+	22,40 грн.

—

FM path of the radio receiver for receiving and processing signals with frequency modulation of the VHF range, as well as amplifying low-frequency signals.

1.1

—

DIP16

—

DIP

—

radio reception

—

90pcs

—

Capacitor K71-7 0.03645 microfarad 250v 0.5%

#12435

24770

СНГ

—

8 грн.

—

K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes.

4.2

Flexible Leads

—

250

—

DIP

—

100 pieces.

—

36.45nF (0.03645µF)

—

0,5 %

—

Variable resistor PPB-1V 1W 470 Ohm 10%

#12400

24733

СНГ

—

20 грн.

10+	18 грн.
50+	16 грн.
100+	15 грн.

—

Variable resistor PPB-1V 1W 470 Ohm 10%. Shaft diameter: 4mm Shaft length: 10mm.

—

DIP

—

5 pieces.

—

470 Ом

1 W

10 %

—