Brand «СНГ»

Results: 4144

	MPN	Article	Brand	In stock	Price	Discounts	Quantity	Description	Weight g.	Pin type	Type of shell	Case diameter D, mm	Transistor case type	Transistor type	Mounting type	Type of shell	Urev. max, V	Ipr. max.	Ipr. imp. max.	Appointment	Diode type	Structure	Power	Factory packaging	Collector-emitter voltage	Collector current	Frequency	Current gain	Resistance	Accuracy	Stabilization voltage	Color	LED type	Diode design

Transistor MP20

#13549

25682

СНГ

—

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

—

Transistor MP20 germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits.

1.8

—

КТЮ-3-3

Bipolar

DIP

—

PNP

150мВт

100 pieces.

30В

50мА

2МГц

150

—

Transistor MP36A

#13547

25679

СНГ

—

6 грн.

10+	5,70 грн.
50+	5,40 грн.
100+	4,80 грн.

—

Transistor germanium alloy npn amplifying low-frequency with non-standardized and normalized at a frequency of 1 kHz noise figure. Designed to amplify low frequency signals.

1.8

—

КТЮ-3-3

Bipolar

DIP

—

NPN

150мВт

100 pieces.

15В

20мА

1МГц

—

Transistor 2T316G (=KT316G) nick.

#13546

25677

СНГ

—

10 грн.

10+	9,50 грн.
50+	9 грн.
100+	8 грн.

—

Transistors silicon epitaxial-planar structures npn universal. Designed for use in high frequency amplifiers.

0.5

—

КТ-1-7

Bipolar

DIP

—

NPN

150мВт

100 pieces.

10В

50мА

600МГц

100

—

Transistor GT322V

#13545

25676

СНГ

—

8 грн.

10+	7,60 грн.
50+	7,20 грн.
100+	6,40 грн.

—

Transistors GT322V germanium diffusion-alloy structures pnp amplifying with a normalized noise figure. Designed for use in intermediate and high frequency amplifiers.

0.5

—

КТ-1-7

Bipolar

DIP

—

PNP

50мВт

100 pieces.

10В

10мА

50МГц

200

—

Transistor GT322B

#13544

25675

СНГ

—

8 грн.

10+	7,60 грн.
50+	7,20 грн.
100+	6,40 грн.

—

Transistors GT322B germanium diffusion-alloy structures pnp amplifying with a normalized noise figure. Designed for use in intermediate and high frequency amplifiers.

0.5

—

КТ-1-7

Bipolar

DIP

—

PNP

50мВт

100 pieces.

6В

10мА

80МГц

120

—

Transistor GT321A

#13541

25672

СНГ

—

8 грн.

10+	7,60 грн.
50+	7,20 грн.
100+	6,40 грн.

—

Transistors GT321A germanium conversion structures pnp switching. Designed for use in switching devices.

1.8

—

КТЮ-3-3

Bipolar

DIP

—

PNP

150мВт

100 pieces.

50В

200мА

60МГц

—

Transistor KT603B

#13540

25671

СНГ

—

12 грн.

10+	11,40 грн.
50+	10,80 грн.
100+	9,60 грн.

—

The main technical characteristics of the transistor KT603B: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.5 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 30 V (1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 300 mA; • Ik and max - The maximum allowable collector pulse current: 600 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 µA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 7 ohms.

1.5

—

КТЮ-3-3

Bipolar

DIP

—

NPN

500мВт

100 pieces.

30В

300мА

200МГц

—

Chip KR1434UD1B (=K157UD2)

#13298

25392

СНГ

—

8 грн.

10+	7,60 грн.
50+	7,20 грн.
100+	6,40 грн.

—

Microcircuits KR1434UD1B are low-noise two-channel operational amplifiers of medium accuracy.

—

DIP14

—

DIP

—

Amplifiers

—

100 pieces.

—

Transistor 2T306G (=KT306G)

#12961

25232

СНГ

—

15 грн.

10+	14,25 грн.
50+	13,50 грн.
100+	12 грн.

—

Transistors 2T306G silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure.

0.6

—

КТЮ-3-1

Bipolar

DIP

—

NPN

150мВт

100 pieces.

10В

30мА

500МГц

200

—

Transistor 2T306V (=KT306V)

#12960

25231

СНГ

—

12 грн.

10+	11,40 грн.
50+	10,80 грн.
100+	9,60 грн.

—

Transistors 2T306V silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure.

0.6

—

КТЮ-3-1

Bipolar

DIP

—

NPN

150мВт

100 pieces.

10В

30мА

300МГц

100

—

Transistor 2T306B (=KT306B)

#12959

25230

СНГ

—

12 грн.

10+	11,40 грн.
50+	10,80 грн.
100+	9,60 грн.

—

Transistors 2T306B silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure.

0.6

—

КТЮ-3-1

Bipolar

DIP

—

NPN

150мВт

100 pieces.

10В

30мА

500МГц

120

—

Transistor 2T306A (=KT306A)

#12958

25229

СНГ

—

10 грн.

10+	9,50 грн.
50+	9 грн.
100+	8 грн.

—

Transistors 2T306A silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure.

0.6

—

КТЮ-3-1

Bipolar

DIP

—

NPN

150мВт

100 pieces.

10В

30мА

300МГц

—

Transistor 1T305B (=GT305B)

#12954

25225

СНГ

—

8 грн.

10+	7,60 грн.
50+	7,20 грн.
100+	6,40 грн.

—

Transistors 1T305B germanium diffusion-alloy structures pnp universal.

0.4

—

Bipolar

DIP

—

PNP

75мВт

100 pieces.

15В

6mA

20МГц

180

—

Transistor 2T908A (=KT908A)

#12953

25224

СНГ

—

120 грн.

10+	114 грн.
50+	108 грн.
100+	96 грн.

—

Transistors 2T908A silicon mezaplanar structures npn switching. Designed for use in stabilizers and voltage converters, pulse modulators. The body is metal with glass insulators and hard leads.

—

КТЮ-3-20

Bipolar

DIP

—

NPN

50Вт

10 pieces.

100В

10А

50МГц

—

Radio lamp 6S52N-V

#12952

25223

СНГ

—

80 грн.

10+	72 грн.
20+	68 грн.
50+	64 грн.

—

6C52H-B Subminiature ceramic-metal triode of increased reliability and mechanical strength. It is intended for amplification and generation of weak signals in devices of wide application. Indirectly heated oxide cathode. Works in any position. Durability not less than 5000 h. Weight no more than 3 g. Location of pins РШ8.

—

DIP

—

20pcs

—

Thermistor ST3-17V 33 Ohm 10%

#12785

25142

СНГ

—

5 грн.

10+	4,50 грн.
50+	4 грн.
100+	3,75 грн.

—

ST3-17 non-sealed disk thermistor is designed to operate in DC, pulsating and alternating current circuits with a frequency of up to 400 Hz in pulsed modes, for measuring and controlling temperature, as well as for temperature compensation of electrical circuit elements with positive temperature coefficients of resistance. Maximum power - 0.3 W. Rated resistance 33 ohm Temperature coefficient of resistance at +20º С - from -3%/°С to 4.5%/°С. Temperature sensitivity coefficient - from 2580 K to 3860 K.

0.3

Flexible Leads

—

DIP

—

200pcs

—

33 Ом

10 %

—

Zener diode 2S133A (=KS133A) glass

#12782

25139

СНГ

—

6 грн.

50+	5,40 грн.
100+	4,80 грн.
250+	4,50 грн.

—

Zener diodes 2S133A silicon, alloy, low power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 3...81 mA.

0.3

—

DIP

—

300мВт

200pcs

—

3V3

—

Diode D311

#12781

25138

СНГ

—

3 грн.

50+	2,70 грн.
200+	2,40 грн.
500+	2,10 грн.

—

Germanium, mesadiffusion, pulsed.

0.3

—

DIP

D104

30V

40mA

—

Pulse

—

100 pieces.

—

single

Diode 1D507A (=GD507A)

#12780

25137

СНГ

—

3 грн.

50+	2,70 грн.
200+	2,40 грн.
500+	2,10 грн.

—

Diodes 1D507A germanium, microalloy, pulsed. Designed to limit and modulate pulse signals. The main technical characteristics of the diode 1D507A: • Uopp max - Maximum direct reverse voltage: 20 V; • Inp max - Maximum forward current: 16 mA; • Unp - DC forward voltage: no more than 0.5 V at Inp 5 mA; • Iobr - DC reverse current: no more than 50 µA at Uobr 20 V; • tvoc arr - Reverse recovery time: 0.1 µs; • Sd - Total capacitance: 0.8 pF.

0.25

—

DIP

КД-121

20V

16mA

200mA

—

Pulse

—

100 pieces.

—

single

Microwave diode DK-V2

#12779

25136

СНГ

—

35 грн.

50+	31,50 грн.
200+	28 грн.
500+	24,50 грн.

—

Microwave diodes DK-V2 silicon, point, detector. Designed to detect signals at a wavelength of 10 cm.

0.5

—

DIP

—

Microwave

—

40pcs

—

single

Microwave diode 2A511A

#12778

25135

СНГ

—

90 грн.

50+	81 грн.
200+	72 грн.
500+	63 грн.

—

The main technical parameters of the microwave diode 2A511A: • Total capacitance: 0.55...0.75 pF; • Forward loss resistance: no more than 2 ohms; • Accumulated diode charge: no more than 350 nC; • Constant reverse voltage: 50...200 V; • Constant forward current: 700 mA; • Value of admissible static potential: 100 V.

0.3

—

DIP

—

Microwave

—

20pcs

—

single

Microwave diode D408

#12777

25134

СНГ

—

35 грн.

50+	31,50 грн.
200+	28 грн.
500+	24,50 грн.

—

Diode D408 silicon point mixing. Designed for use in frequency converters in the wavelength range of 4.5..10 s.

2.5

—

DIP

—

Microwave

—

10 pieces.

—

single

Microwave diode D605

#12776

25133

СНГ

—

40 грн.

50+	36 грн.
200+	32 грн.
500+	28 грн.

—

Microwave diode D605 silicon, point, detector. It is intended for detection of pulsed amplitude-modulated signals, indication of pulsed power in the wave range 3.2..10cm.

2.5

—

DIP

—

Microwave

—

10 pieces.

—

single

Thyristor KU101G

#12775

25132

СНГ

—

10 грн.

—

The main technical parameters of the thyristor KU101G: • Maximum DC reverse voltage: 80 V; • Maximum DC voltage in closed state: 80 V; • Maximum repetitive pulse current in the open state: 1 A; • Average pulse current in the open state: 0.075 A; • Voltage in the open state: no more than 2.5 V; • Direct current in the closed state: not less than 0.15 mA; • Constant reverse current: no more than 0.15 mA; • Unlocking direct control current: no more than 12 mA; • Constant unlocking control voltage: 1.5...8 V; • Voltage slew rate in closed state: 100 V/µs; • Turn-on time: 2 ms; • Turn-off time: 35 µs.

—

DIP

—

100 pieces.

—

Transistor GT701A

#12774

25131

СНГ

—

40 грн.

10+	38 грн.
50+	36 грн.
100+	32 грн.

—

Transistor GT701A germanium alloy structure pnp universal. Designed for use in ignition systems of internal combustion engines, as well as in voltage converters.

—

Bipolar

DIP

—

PNP

50Вт

20pcs

100В

12А

—

P605A transistor with flexible leads

#12773

25130

СНГ

—

20 грн.

10+	19 грн.
50+	18 грн.
100+	16 грн.

—

Transistor germanium structure pnp universal. Designed for use in amplifying, generator and pulse stages of low and high frequencies up to 30 MHz.

—

Bipolar

DIP

—

PNP

3Вт

40pcs

40В

1.5А

30МГц

120

—

Bearing 3182112 (60*95*26) (=NN3012K)

#12767

25124

СНГ

—

600 грн.

—

It is used in machine tool building and metalworking equipment. Bearing inner diameter d 60 mm Bearing outer diameter D 95 mm Bearing width H 26 mm Bearing chamfer radius r 2.0 mm Static load rating C0 54000 N Dynamic load rating C 74500 N.

800

—

1 PC.

—

Phototransistor FT-1K gr.1

#12650

25005

СНГ

—

11 грн.

10+	10,45 грн.
50+	9,90 грн.
100+	8,80 грн.

—

The main technical parameters of the phototransistor FT-1K gr.1: • Photosensitive element size: diameter 1.8 mm; • Area of spectral photosensitivity: 0.5...1.12 microns; • Wavelength of maximum spectral distribution of photosensitivity: 0.8...0.9 µm; • Rated operating voltage: 5 V; • Dark current: no more than 3 mkA; • Current photosensitivity: not less than 0.4 µA/lx.

0.3

—

Photo

DIP

—

100 pieces.

—

LED 3L107A

#12649

25004

СНГ

—

54 грн.

50+	48,60 грн.
200+	45,90 грн.
500+	40,50 грн.

—

Emitting diodes, arsenidogallium, mesaepitaxial. Designed to work as sources of infrared radiation.

0.3

—

DIP

—

1 PC.

—

2.4mm round

—

Transistor 1T311B (=GT311B)

#12648

25003

СНГ

—

14 грн.

10+	13,30 грн.
50+	12,60 грн.
100+	11,20 грн.

—

Bipolar germanium transistor GT311B, npn, low power, ultrahigh frequency.

1.2

—

Bipolar

DIP

—

NPN

150мВт

100 pieces.

12В

50мА

300МГц

—