Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Transistor case type Transistor type Mounting type Appointment Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
25757 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— Bus driver (4-channel switch) 1.1 DIP16 — — DIP Logics — — 100 pieces. — — — —
25756 СНГ —
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
— delay line. 2.1 DIP14 — — DIP Interfaces — — 100 pieces. — — — —
25754 СНГ —
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
— Quad operational amplifier with internal frequency correction. 1.2 DIP14 — — DIP Amplifiers — — 100 pieces. — — — —
25752 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— 2 D flip-flops. 1 DIP14 — — DIP Logics — — 100 pieces. — — — —
25751 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Logic element 8I-NOT. 1 DIP14 — — DIP Logics — — 100 pieces. — — — —
25750 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— 4 logical elements 2OR-NOT/OR. 1.2 DIP16 — — DIP Logics — — 90pcs — — — —
25749 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Opto-switch-inverter. 1 DIP14 — — DIP Logics — — 100 pieces. — — — —
25748 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— Multifunctional differential amplifier. 1 DIP14 — — DIP Amplifiers — — 100 pieces. — — — —
25744 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
— Analog switch. 1 DIP14 — — DIP ADC — — 100 pieces. — — — —
25740 СНГ —
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
— Four-phase pulse generator. 1 DIP14 — — DIP Logics — — 100 pieces. — — — —
25739 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
— Voltage comparator. 1 DIP14 — — DIP Logics — — 100 pieces. — — — —
25736 СНГ —
18 грн.
10+17,10 грн.
50+16,20 грн.
100+14,40 грн.
— 1024 bit (1024x1) static random access memory with control circuits. 1.2 DIP16 — — DIP Memory — — 90pcs — — — —
25728 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— Universal four-digit decimal counter. 1.2 DIP16 — — DIP Logics — — 90pcs — — — —
25727 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
— High-speed operational amplifier with high input impedance. 0.5 DIP8 — — DIP Amplifiers — — 200pcs — — — —
25725 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— Matrix of two npn transistors. 0.5 DIP8 — — DIP Transistor Assembly — — 200pcs — — — —
25685 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
— shift register. 1.3 DIP16 — — DIP Logics — — 90pcs — — — —
25684 СНГ —
18 грн.
10+17,10 грн.
50+16,20 грн.
100+14,40 грн.
— 15-bit binary frequency divider. 1 DIP14 — — DIP Logics — — 100 pieces. — — — —
25682 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Transistor MP20 germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 — КТЮ-3-3 Bipolar DIP — PNP 150мВт 100 pieces. 30В 50мА 2МГц 150
25681 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
— Transistors MP40 germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. 1.8 — КТЮ-3-6 Bipolar DIP — PNP 150мВт 100 pieces. 30В 30мА 1МГц 40
25679 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Transistor germanium alloy npn amplifying low-frequency with non-standardized and normalized at a frequency of 1 kHz noise figure. Designed to amplify low frequency signals. 1.8 — КТЮ-3-3 Bipolar DIP — NPN 150мВт 100 pieces. 15В 20мА 1МГц 45
25677 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— Transistors silicon epitaxial-planar structures npn universal. Designed for use in high frequency amplifiers. 0.5 — КТ-1-7 Bipolar DIP — NPN 150мВт 100 pieces. 10В 50мА 600МГц 100
25676 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— Transistors GT322V germanium diffusion-alloy structures pnp amplifying with a normalized noise figure. Designed for use in intermediate and high frequency amplifiers. 0.5 — КТ-1-7 Bipolar DIP — PNP 50мВт 100 pieces. 10В 10мА 50МГц 200
25675 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— Transistors GT322B germanium diffusion-alloy structures pnp amplifying with a normalized noise figure. Designed for use in intermediate and high frequency amplifiers. 0.5 — КТ-1-7 Bipolar DIP — PNP 50мВт 100 pieces. 6В 10мА 80МГц 120
25672 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— Transistors GT321A germanium conversion structures pnp switching. Designed for use in switching devices. 1.8 — КТЮ-3-3 Bipolar DIP — PNP 150мВт 100 pieces. 50В 200мА 60МГц 60
25671 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
— The main technical characteristics of the transistor KT603B: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.5 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 30 V (1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 300 mA; • Ik and max - The maximum allowable collector pulse current: 600 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 µA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 7 ohms. 1.5 — КТЮ-3-3 Bipolar DIP — NPN 500мВт 100 pieces. 30В 300мА 200МГц 60
25392 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— Microcircuits KR1434UD1B are low-noise two-channel operational amplifiers of medium accuracy. 1 DIP14 — — DIP Amplifiers — — 100 pieces. — — — —
25232 СНГ —
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
— Transistors 2T306G silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure. 0.6 — КТЮ-3-1 Bipolar DIP — NPN 150мВт 100 pieces. 10В 30мА 500МГц 200
25231 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
— Transistors 2T306V silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure. 0.6 — КТЮ-3-1 Bipolar DIP — NPN 150мВт 100 pieces. 10В 30мА 300МГц 100
25230 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
— Transistors 2T306B silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure. 0.6 — КТЮ-3-1 Bipolar DIP — NPN 150мВт 100 pieces. 10В 30мА 500МГц 120
25229 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— Transistors 2T306A silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure. 0.6 — КТЮ-3-1 Bipolar DIP — NPN 150мВт 100 pieces. 10В 30мА 300МГц 60