Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Appointment | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain |
|---|
|
Chip KM589AP16
#13605
|
25757 | СНГ | — |
8 грн.
|
|
— | Bus driver (4-channel switch) | 1.1 | DIP16 | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — | |||||||
|
Chip ShR01-50
#13604
|
25756 | СНГ | — |
15 грн.
|
|
— | delay line. | 2.1 | DIP14 | — | — | DIP | Interfaces | — | — | 100 pieces. | — | — | — | — | |||||||
|
Chip K1401UD2B
#13602
|
25754 | СНГ | — |
14 грн.
|
|
— | Quad operational amplifier with internal frequency correction. | 1.2 | DIP14 | — | — | DIP | Amplifiers | — | — | 100 pieces. | — | — | — | — | |||||||
|
Chip K1TK552 (=K155TM2)
#13600
|
25752 | СНГ | — |
6 грн.
|
|
— | 2 D flip-flops. | 1 | DIP14 | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — | |||||||
|
Chip K1LB552 (=K155LA2)
#13599
|
25751 | СНГ | — |
6 грн.
|
|
— | Logic element 8I-NOT. | 1 | DIP14 | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — | |||||||
|
Chip K500LM101
#13598
|
25750 | СНГ | — |
10 грн.
|
|
— | 4 logical elements 2OR-NOT/OR. | 1.2 | DIP16 | — | — | DIP | Logics | — | — | 90pcs | — | — | — | — | |||||||
|
Chip K293LP1A dip14
#13597
|
25749 | СНГ | — |
6 грн.
|
|
— | Opto-switch-inverter. | 1 | DIP14 | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — | |||||||
|
Chip KR198UT1A
#13596
|
25748 | СНГ | — |
10 грн.
|
|
— | Multifunctional differential amplifier. | 1 | DIP14 | — | — | DIP | Amplifiers | — | — | 100 pieces. | — | — | — | — | |||||||
|
Chip KR143KT1
#13592
|
25744 | СНГ | — |
12 грн.
|
|
— | Analog switch. | 1 | DIP14 | — | — | DIP | ADC | — | — | 100 pieces. | — | — | — | — | |||||||
|
Chip KR165GF2
#13591
|
25740 | СНГ | — |
15 грн.
|
|
— | Four-phase pulse generator. | 1 | DIP14 | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — | |||||||
|
Chip K554CA3A
#13590
|
25739 | СНГ | — |
20 грн.
|
|
— | Voltage comparator. | 1 | DIP14 | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — | |||||||
|
Chip KR565RU2A
#13588
|
25736 | СНГ | — |
18 грн.
|
|
— | 1024 bit (1024x1) static random access memory with control circuits. | 1.2 | DIP16 | — | — | DIP | Memory | — | — | 90pcs | — | — | — | — | |||||||
|
Chip K500IE137
#13582
|
25728 | СНГ | — |
10 грн.
|
|
— | Universal four-digit decimal counter. | 1.2 | DIP16 | — | — | DIP | Logics | — | — | 90pcs | — | — | — | — | |||||||
|
Chip KR574UD1B
#13581
|
25727 | СНГ | — |
25 грн.
|
|
— | High-speed operational amplifier with high input impedance. | 0.5 | DIP8 | — | — | DIP | Amplifiers | — | — | 200pcs | — | — | — | — | |||||||
|
Chip KR159NT1E
#13579
|
25725 | СНГ | — |
8 грн.
|
|
— | Matrix of two npn transistors. | 0.5 | DIP8 | — | — | DIP | Transistor Assembly | — | — | 200pcs | — | — | — | — | |||||||
|
Chip K176IE10
#13552
|
25685 | СНГ | — |
12 грн.
|
|
— | shift register. | 1.3 | DIP16 | — | — | DIP | Logics | — | — | 90pcs | — | — | — | — | |||||||
|
Chip K176IE5A
#13551
|
25684 | СНГ | — |
18 грн.
|
|
— | 15-bit binary frequency divider. | 1 | DIP14 | — | — | DIP | Logics | — | — | 100 pieces. | — | — | — | — | |||||||
|
Transistor MP20
#13549
|
25682 | СНГ | — |
6 грн.
|
|
— | Transistor MP20 germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | PNP | 150мВт | 100 pieces. | 30В | 50мА | 2МГц | 150 | |||||||
|
Transistor MP40
#13548
|
25681 | СНГ | — |
5 грн.
|
|
— | Transistors MP40 germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. | 1.8 | — | КТЮ-3-6 | Bipolar | DIP | — | PNP | 150мВт | 100 pieces. | 30В | 30мА | 1МГц | 40 | |||||||
|
Transistor MP36A
#13547
|
25679 | СНГ | — |
6 грн.
|
|
— | Transistor germanium alloy npn amplifying low-frequency with non-standardized and normalized at a frequency of 1 kHz noise figure. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | NPN | 150мВт | 100 pieces. | 15В | 20мА | 1МГц | 45 | |||||||
| 25677 | СНГ | — |
10 грн.
|
|
— | Transistors silicon epitaxial-planar structures npn universal. Designed for use in high frequency amplifiers. | 0.5 | — | КТ-1-7 | Bipolar | DIP | — | NPN | 150мВт | 100 pieces. | 10В | 50мА | 600МГц | 100 | ||||||||
|
Transistor GT322V
#13545
|
25676 | СНГ | — |
8 грн.
|
|
— | Transistors GT322V germanium diffusion-alloy structures pnp amplifying with a normalized noise figure. Designed for use in intermediate and high frequency amplifiers. | 0.5 | — | КТ-1-7 | Bipolar | DIP | — | PNP | 50мВт | 100 pieces. | 10В | 10мА | 50МГц | 200 | |||||||
|
Transistor GT322B
#13544
|
25675 | СНГ | — |
8 грн.
|
|
— | Transistors GT322B germanium diffusion-alloy structures pnp amplifying with a normalized noise figure. Designed for use in intermediate and high frequency amplifiers. | 0.5 | — | КТ-1-7 | Bipolar | DIP | — | PNP | 50мВт | 100 pieces. | 6В | 10мА | 80МГц | 120 | |||||||
|
Transistor GT321A
#13541
|
25672 | СНГ | — |
8 грн.
|
|
— | Transistors GT321A germanium conversion structures pnp switching. Designed for use in switching devices. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | PNP | 150мВт | 100 pieces. | 50В | 200мА | 60МГц | 60 | |||||||
|
Transistor KT603B
#13540
|
25671 | СНГ | — |
12 грн.
|
|
— | The main technical characteristics of the transistor KT603B: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.5 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 30 V (1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 300 mA; • Ik and max - The maximum allowable collector pulse current: 600 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 µA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 7 ohms. | 1.5 | — | КТЮ-3-3 | Bipolar | DIP | — | NPN | 500мВт | 100 pieces. | 30В | 300мА | 200МГц | 60 | |||||||
|
Chip KR1434UD1B (=K157UD2)
#13298
|
25392 | СНГ | — |
8 грн.
|
|
— | Microcircuits KR1434UD1B are low-noise two-channel operational amplifiers of medium accuracy. | 1 | DIP14 | — | — | DIP | Amplifiers | — | — | 100 pieces. | — | — | — | — | |||||||
|
Transistor 2T306G (=KT306G)
#12961
|
25232 | СНГ | — |
15 грн.
|
|
— | Transistors 2T306G silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure. | 0.6 | — | КТЮ-3-1 | Bipolar | DIP | — | NPN | 150мВт | 100 pieces. | 10В | 30мА | 500МГц | 200 | |||||||
|
Transistor 2T306V (=KT306V)
#12960
|
25231 | СНГ | — |
12 грн.
|
|
— | Transistors 2T306V silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure. | 0.6 | — | КТЮ-3-1 | Bipolar | DIP | — | NPN | 150мВт | 100 pieces. | 10В | 30мА | 300МГц | 100 | |||||||
|
Transistor 2T306B (=KT306B)
#12959
|
25230 | СНГ | — |
12 грн.
|
|
— | Transistors 2T306B silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure. | 0.6 | — | КТЮ-3-1 | Bipolar | DIP | — | NPN | 150мВт | 100 pieces. | 10В | 30мА | 500МГц | 120 | |||||||
|
Transistor 2T306A (=KT306A)
#12958
|
25229 | СНГ | — |
10 грн.
|
|
— | Transistors 2T306A silicon epitaxial-planar structures npn switching and amplifying with non-normalized noise figure. | 0.6 | — | КТЮ-3-1 | Bipolar | DIP | — | NPN | 150мВт | 100 pieces. | 10В | 30мА | 300МГц | 60 |