Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Pin type Type of shell Working voltage, V Transistor case type Transistor type Mounting type Urev. max, V Ipr. max. Ipr. imp. max. Appointment Diode type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Capacity Accuracy Stabilization voltage Zener diode housing type Plug or socket Number of contacts Mechanical installation Type Color Diode design LED purpose
26009 СНГ
570 грн.
UVPM-1-126 0-600sec The microelectronic program-time device is designed for switching electrical circuits with certain pre-set time delays and is used in industrial equipment for various purposes, to obtain time delays in industrial automation circuits and relay protection. Warranty operating time 10000 h. Specifications: TU 25-05.2493-79. 200 2 pcs.
25996 СНГ
5,130 грн.
The TKS111DOD contactor is designed for switching circuits in the electrical systems of aviation equipment for all-climatic applications. Main technical characteristics of the contactor TKS111DOD: • Rated voltage in the circuit of the main contacts and in the control circuit, V ...... 27 • Main contacts current, A ...... 100 • Operating mode ...... continuous • Number of switching ...... 10000. 450 1 PC.
25989 СНГ
15 грн.
50+13,50 грн.
200+12 грн.
500+10,50 грн.
Pillars of silicon, diffusion diodes, rectifiers. Designed for use in high-voltage secondary power supply units with additional sealing. 1.6 DIP 6kV 50mA High voltage 100 pieces. single
25971 СНГ
5,600 грн.
DC commutator motor with hollow armature DPR-72-F1-03 is designed for use as power motors and for driving various mechanisms of short-term, intermittent and continuous action in industrial automation equipment, telemechanics, radio electronics. Electric motors of the DPR-72 series are produced according to the specifications OST160.515.007-74. Technical characteristics of the DPR-72-F1-03 engine: • Supply voltage, V ...... 27 • Rated power, W ...... 18.5 • Speed, rpm ...... 4500 • Rated torque, mN*m ...... 39.2 • Starting torque, mN*m ...... 245 • Current consumption, A ...... 1.3 • Starting current, A ...... 17.5 • Efficiency, % ...... 53 • Warranty operating time, h ..... 1000. 580 1 PC.
25969 СНГ
4,275 грн.
Collector DC motor with a hollow armature DPR-62-N1-02 is designed for use as power motors and for driving various mechanisms of short-term, intermittent and continuous action in industrial automation equipment, telemechanics, radio electronics. Electric motors of the DPR-62 series are produced according to the specifications OST160.515.007-74. Technical characteristics of the DPR-62-N1-02 engine: • Supply voltage, V ...... 27 • Rated power, W ...... 6.15 • Speed, rpm ...... 6000 • Rated torque, mN*m ...... 9.8 • Starting torque, mN*m ...... 68.7 • Current consumption, A ...... 0.5 • Starting current, A ...... 5.5 • Efficiency, % ...... 46 • Warranty operating time, h ..... 1000. 380 1 PC.
25964 СНГ
1,995 грн.
Collector DC motor with a hollow armature DPR-42-N1-02 is designed for use as power motors and for driving various mechanisms of short-term, intermittent and continuous action in industrial automation equipment, remote control, radio electronics. Electric motors of the DPR-42 series are produced according to the specifications OST160.515.007-74. Technical characteristics of the DPR-42-N1-02 engine: • Supply voltage, V ...... 27 • Rated power, W ...... 3.1 • Speed, rpm ...... 6000 • Rated torque, mN*m ...... 4.9 • Starting torque, mN*m ...... 19.6 • Current consumption, A ...... 0.24 • Starting current, A ...... 1.8 • Efficiency, % ...... 48 • Warranty operating time, h ..... 1000. 140 1 PC.
25963 СНГ
570 грн.
Collector DC motor with a hollow armature DPR-42-N1-03 is designed for use as power motors and for driving various mechanisms of short-term, intermittent and continuous action in industrial automation equipment, telemechanics, radio electronics. Electric motors of the DPR-42 series are produced according to the specifications OST160.515.007-74. Technical characteristics of the DPR-42-N1-03 engine: • Supply voltage, V ...... 27 • Rated power, W ...... 2.3 • Speed, rpm ...... 4500 • Rated torque, mN*m ...... 4.9 • Starting torque, mN*m ...... 12.8 • Current consumption, A ...... 0.2 • Starting current, A ...... 1.15 • Efficiency, % ...... 43 • Warranty operating time, h ..... 2500. 140 1 PC.
25959 СНГ
35 грн.
50+31,50 грн.
200+28 грн.
500+24,50 грн.
Diodes D243A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the diode D243A: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 200 V. 13 Screw 200V 10A Rectifier 50pcs single
25935 СНГ
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
Dual (two-channel) medium-precision operational amplifier with internal frequency correction and input short-circuit protection. 1 DIP14 DIP Amplifiers 100 pieces.
25920 СНГ
90 грн.
10+85,50 грн.
50+81 грн.
100+72 грн.
Transistors KT848A silicon mezaplanar structures npn amplifying. Are intended for application in electronic circuits of ignition of the automobile radio-electronic equipment. The main technical characteristics of the transistor KT848A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 35 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 3 MHz; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 15 A; • Iкer - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (400V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 20; • Rke us - Saturation resistance between collector and emitter: no more than 0.2 Ohm. 15 TO3 Bipolar DIP NPN 35Вт 40pcs 400В 15А 3МГц 20
25919 СНГ
2 грн.
Bracket for mounting transistors T0-220. 0.7 Screw 100 pieces.
25918 СНГ
460 грн.
10+437 грн.
20+414 грн.
50+391 грн.
100+368 грн.
Type-setting connectors RPN23-5Sh-V are designed to work in low-frequency and radio-frequency electrical circuits. The design of the connector consists of extractable connecting modules, interchangeable in terms of installation dimensions. The main module for 10 low-frequency contacts is a RPN23-10 connector in the housing. The connecting module for two radio-frequency contacts for the PK-75-3-22 cable and three radio-frequency contacts for the PK-75-1-22 cable is the RPN23-5 connector, and the connecting module for three radio-frequency contacts is the RPN23-3 connector. The five-pin RF connection module in the installation width corresponds to two sizes of a 10-pin low-frequency module or a 3-pin RF module. From combinations of these modules, you can get connectors with a different number of contacts. Specifications: OST B 11 0121-91; GE0.364.230 TU. 30 DIP 100 pieces. Fork 10 To the body on-load tap-changer
25917 СНГ
426 грн.
10+404,70 грн.
20+383,40 грн.
50+362,10 грн.
100+340,80 грн.
Type-setting connectors RPN23-5G-V are designed to work in low-frequency and radio-frequency electrical circuits. The design of the connector consists of extractable connecting modules, interchangeable in terms of installation dimensions. The main module for 10 low-frequency contacts is a RPN23-10 connector in the housing. The connecting module for two radio-frequency contacts for the PK-75-3-22 cable and three radio-frequency contacts for the PK-75-1-22 cable is the RPN23-5 connector, and the connecting module for three radio-frequency contacts is the RPN23-3 connector. The five-pin RF connection module in the installation width corresponds to two sizes of a 10-pin low-frequency module or a 3-pin RF module. From combinations of these modules, you can get connectors with a different number of contacts. Specifications: OST B 11 0121-91; GE0.364.230 TU. 34 DIP 100 pieces. Socket 10 To the body on-load tap-changer
25912 СНГ
40 грн.
Indicators ALS318 are sign-synthesizing, based on the compound gallium-phosphorus-arsenic, planar. Designed for visual indication. The indicators consist of nine crystals, each containing seven segments and a decimal point. Various combinations of elements, provided by external switching, allow the reproduction of numbers from 0 to 9, individual characters and a decimal point. The main technical parameters of the alphanumeric indicator ALS318: • Color of radiation (glow): red; • Character height: 2.5 mm; • Luminous intensity of one segment: 0.95 mcd; • Constant forward voltage: no more than 1.9 V at 5 mA; • Permissible spread of light intensity between segments: -50%; • Maximum pulse current: 40 mA; • Maximum allowable DC reverse voltage: 5V. 5 10 pieces. Red Indication
25911 СНГ
14 грн.
Single-digit alphanumeric indicators ALS324B1 with a digit height of 7.5 mm from seven segments with a decimal point. They are made on the basis of gallium-phosphorus-arsenic LED structures using epitaxial-diffusion technology. 1.6 DIP 100 pieces. Red
25910 СНГ
2 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 1.3 Flexible Leads 63 DIP 1000pcs 680nF (0.68µF) 10 %
25909 СНГ
2 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 1.6 Flexible Leads 63 DIP 1000pcs 1µF 5 %
25908 СНГ
2 грн.
K73-17 polyethylene terephthalate protected capacitors. Designed for the operation of built-in elements inside complete products in DC, AC circuits and in a pulsed mode. 1.6 Flexible Leads 63 DIP 1000pcs 1µF 10 %
25903 СНГ
5 грн.
Flange for fastening a powerful transistor to a radiator. The flange is suitable for mounting the following transistors: KT802, KT803, KT805, KT808, KT809 KT903, KT908 GT806 P210 Thyristors KU203, D238 And some other semiconductor products. 10 100 pieces.
25899 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Three elements 2AND-2OR-NOT. 1 DIP14 DIP Logics 100 pieces.
25898 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
3-bit parallel register. 1 DIP14 DIP Logics 100 pieces.
25897 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
4 logical elements 2I-NOT. 1 DIP14 DIP Logics 100 pieces.
25895 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Synchronous four-charge ten-day reversible counter. 1 DIP16 DIP Logics 90pcs
25894 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Four logical elements 2I. 1 DIP14 DIP Logics 100 pieces.
25891 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
The microcircuit is designed to exchange information between devices and system units and to transfer data to peripheral devices, display and indication devices, for interfaces made using bipolar technology (TTLS). The 559IP4 microcircuit consists of two trunk transmitters. 1.2 DIP16 DIP Interfaces 90pcs
25889 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
KR504NT4B microcircuits are a high-current matched pair of field-effect transistors with a pn junction and a p-channel, designed for use in the input stages of DC amplifiers, in differential and operational amplifiers and switches. 0.5 DIP8 DIP Amplifiers 200pcs
25871 СНГ
8 грн.
50+7,20 грн.
100+6,40 грн.
250+6 грн.
Zener diodes KS650A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 150 V in the stabilization current range of 7...38 mA. The main technical parameters of the KS650A zener diode: • Rated stabilization voltage: 150 V at Ist 25 mA; • Stabilization voltage spread: 135... 165 V; • Temperature coefficient of stabilization voltage: ±0.2%/°С; • Zener diode differential resistance: 270 Ohm at Ist 25 mA; • Minimum allowable stabilization current: 7 mA; • Maximum allowable stabilization current: 38 mA; • Maximum allowable power dissipation on the zener diode: 5 watts. 1.5 Screw 5Вт 100 pieces. 150V ks620
25862 СНГ
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
PNP structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 15 Max. e.g. k-e at a given current to and a given resist. in the circuit b-e. (Uker max), V 15 The maximum allowable current to (Ik max, A) 0.2 Static current transfer coefficient h21e min 20…35 Limiting frequency of the current transfer coefficient fgr, MHz 1 Maximum dissipated power k (Pk, W) 0.2 1.6 КТЮ-3-6 Bipolar DIP PNP 200мВт 100 pieces. 15В 200мА 1МГц 35
25859 СНГ
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistor MP10 germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. The main technical characteristics of the MP10B transistor: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 50 μA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 25...50; • Sk - Collector junction capacitance: no more than 60 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 5000 ps; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 30В 20мА 1МГц 50
25857 СНГ
12 грн.
Silicon thyristors KU101E, diffusion-alloy, p-type, triode, non-lockable. Designed for use as switching elements. The main technical parameters of the thyristor KU101E: • Maximum DC reverse voltage: 150 V; • Maximum DC voltage in closed state: 150 V; • Maximum repetitive pulse current in the open state: 1 A; • Average pulse current in the open state: 0.075 A; • Voltage in the open state: no more than 2.5 V; • Direct current in the closed state: not less than 0.15 mA; • Constant reverse current: no more than 0.15 mA; • Unlocking direct control current: no more than 12 mA; • Constant unlocking control voltage: 1.5...8 V; • Voltage slew rate in closed state: 100 V/µs; • Turn-on time: 2 ms; • Turn-off time: 35 µs. 1.8 DIP 150V 1A 100 pieces.