Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Rated capacity, μF | Working voltage, V | Rated capacity tolerance,% | Working temperature, С | Case diameter D, mm | Body length L, mm | Transistor case type | Transistor type | Mounting type | Appointment | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Capacity | Accuracy | Stabilization voltage | Zener diode housing type | Working current, A | Material | Plug or socket | Number of contacts | Mechanical installation | Type | Color | LED type | LED purpose |
|---|
|
Fuse VP1-1 5A 250V
#11535
|
23772 | СНГ | — |
4 грн.
|
|
— | Material ceramic Rated voltage, V 250 Rated operating current, A 5 Cylindrical contacts Case length, mm 15 Case diameter, mm 4 Operating temperature, С -60…100 | 0.3 | — | — | — | 250 | — | — | 4 | 15 | — | — | DIP | — | — | — | 200pcs | — | — | — | — | — | — | — | — | 5 | Ceramics | — | — | — | — | — | — | — | |||||||||
|
Fuse VPT6-5, 0.5A 5x20
#11534
|
23771 | СНГ | — |
1.50 грн.
|
|
— | Fuses (fusible inserts) are designed to break the electrical circuit if the current in the circuit exceeds the specified one. | 0.9 | — | — | — | 250 | — | — | 5 | 20 | — | — | DIP | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | 0.5 | Glass | — | — | — | — | — | — | — | |||||||||
|
Fuse VP1-1 0.5A 250V
#11533
|
23769 | СНГ | — |
4 грн.
|
|
— | Material ceramic Rated voltage, V 250 Rated operating current, A 0.5 Cylindrical contacts Case length, mm 15 Case diameter, mm 4 Operating temperature, С -60…100 | 0.3 | — | — | — | 250 | — | — | 4 | 15 | — | — | DIP | — | — | — | 200pcs | — | — | — | — | — | — | — | — | 0.5 | Ceramics | — | — | — | — | — | — | — | |||||||||
| 23730 | СНГ | — |
14 грн.
|
|
— | Designed for operation in electrical circuits of direct, variable frequency up to 3 MHz and pulse currents up to 1550 V. Maximum operating current per contact, 15A. | 14 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | Socket | 7 | To the body | RP | — | — | — | ||||||||||
| 23729 | СНГ | — |
14 грн.
|
|
— | Designed for operation in electrical circuits of direct, variable frequency up to 3 MHz and pulse currents up to 1550 V. Maximum operating current per contact, 15A. | 10.2 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | Fork | 7 | To the body | RP | — | — | — | ||||||||||
|
Connector RP10-7L-P-O (plug)
#11500
|
23728 | СНГ | — |
12 грн.
|
|
— | Designed for operation in electrical circuits of direct, variable frequency up to 3 MHz and pulse currents up to 1550 V. Maximum operating current per contact, 15A. | 5.7 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | Fork | 7 | To the body | RP | — | — | — | |||||||||
| 23727 | СНГ | — |
40 грн.
|
|
— | Connector RP10-15 low-frequency, rectangular, internal mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. Maximum operating current per contact, 15A. | 50 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | 25pcs | — | — | — | — | — | — | — | — | — | — | Fork | 15 | per wire | RP | — | — | — | ||||||||||
| 23726 | СНГ | — |
14 грн.
|
|
— | Designed for operation in electrical circuits of direct, variable frequency up to 3 MHz and pulse currents up to 1550 V. Maximum operating current per contact, 15A. | 10 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | Socket | 7 | To the body | RP | — | — | — | ||||||||||
| 23608 | СНГ | — |
20 грн.
|
|
— | The connectors are designed to connect and disconnect electrical circuits of direct, alternating (with a frequency of up to 3 MHz) and pulsed currents in equipment with volumetric installation. | 10 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | 124pcs | — | — | — | — | — | — | — | — | — | — | Fork | 32 | For a fee | SNP | — | — | — | ||||||||||
| 23598 | СНГ | — |
3.50 грн.
|
— | Capacitors MBM paper metallized compacted insulated. | 2.9 | Flexible Leads | — | — | 250 | — | — | 8 | 35 | — | — | DIP | — | — | — | 100 pieces. | — | — | — | — | 100nF (0.1µF) | 10 % | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
|
Capacitor MBM 0.025 uF 500 V
#11462
|
23594 | СНГ | — |
3 грн.
|
— | Capacitors MBM paper metallized compacted insulated. | 2 | Flexible Leads | — | — | 500 | — | — | — | — | — | — | DIP | — | — | — | 140pcs | — | — | — | — | 25nF (0.025µF) | 10 % | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 23592 | СНГ | — |
30.30 грн.
|
|
— | Capacitors K50-12 aluminum oxide-electrolytic with foil plates. | 75 | hard conclusions | — | 200 | 300 | 20 | -25...+70 | 32 | 60 | — | — | Screw | — | — | — | 25pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Chip 541PT2 Au
#11457
|
23587 | СНГ | — |
162 грн.
|
|
— | Read-only memory with the possibility of one-time programming with an information capacity of 16Kbps (2048 x 8 bits). | 1.5 | — | SO24 | — | — | — | — | — | — | — | — | SMD | Memory | — | — | 80pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
|
Transistor KT209G
#11447
|
23575 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | — | — | — | — | — | — | — | TO92 | Bipolar | DIP | — | PNP | 350мВт | 1000pcs | 30В | 350мА | — | 60 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor KT3102GM
#11445
|
23573 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | — | — | — | — | — | — | — | TO92 | Bipolar | DIP | — | NPN | 250мВт | 1000pcs | 20В | 200мА | — | 1000 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor KT209Zh
#11444
|
23572 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | — | — | — | — | — | — | — | TO92 | Bipolar | DIP | — | PNP | 350мВт | 1000pcs | 45В | 350мА | — | 60 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor KT209K
#11443
|
23571 | СНГ | — |
4 грн.
|
|
— | 0.3 | — | — | — | — | — | — | — | — | TO92 | Bipolar | DIP | — | PNP | 350мВт | 1000pcs | 45В | 350мА | — | 160 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor KT209A
#11442
|
23569 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | — | — | — | — | — | — | — | TO92 | Bipolar | DIP | — | PNP | 350мВт | 1000pcs | 25В | 350мА | — | 120 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor KT209M
#11441
|
23568 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | — | — | — | — | — | — | — | TO92 | Bipolar | DIP | — | PNP | 350мВт | 1000pcs | 60В | 350мА | — | 120 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor KT209D
#11440
|
23567 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | — | — | — | — | — | — | — | TO92 | Bipolar | DIP | — | PNP | 350мВт | 1000pcs | 60В | 350мА | — | 120 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor KT503G
#11439
|
23566 | СНГ | — |
5 грн.
|
|
— | Transistors KT503G silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. | 0.3 | — | — | — | — | — | — | — | — | TO92 | Bipolar | DIP | — | NPN | 350мВт | 1000pcs | 40В | 350мА | 5МГц | 240 | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
|
Transistor KT503V
#11438
|
23565 | СНГ | — |
5 грн.
|
|
— | Transistors KT503V silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. | 0.3 | — | — | — | — | — | — | — | — | TO92 | Bipolar | DIP | — | NPN | 350мВт | 1000pcs | 40В | 350мА | 5МГц | 120 | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
|
Transistor KT502E
#11436
|
23562 | СНГ | — |
5 грн.
|
|
— | Transistors KT502E silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters | 0.3 | — | — | — | — | — | — | — | — | TO92 | Bipolar | DIP | — | PNP | 350мВт | 1000pcs | 80В | 350мА | 5МГц | 120 | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
|
Transistor KT502G
#11435
|
23561 | СНГ | — |
5 грн.
|
|
— | Transistors KT502G silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters | 0.3 | — | — | — | — | — | — | — | — | TO92 | Bipolar | DIP | — | PNP | 350мВт | 1000pcs | 40В | 350мА | 5МГц | 240 | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
|
Transistor KT502V
#11434
|
23560 | СНГ | — |
5 грн.
|
|
— | Transistors KT502V silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters | 0.3 | — | — | — | — | — | — | — | — | TO92 | Bipolar | DIP | — | PNP | 350мВт | 1000pcs | 40В | 350мА | 5МГц | 120 | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
|
Transistor KT502B
#11433
|
23559 | СНГ | — |
5 грн.
|
|
— | Transistors KT502B silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters | 0.3 | — | — | — | — | — | — | — | — | TO92 | Bipolar | DIP | — | PNP | 350мВт | 1000pcs | 25В | 350мА | 5МГц | 240 | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
|
LED AL102GM
#11430
|
23547 | СНГ | — |
3 грн.
|
|
— | The main technical parameters of the LED AL102GM: • Color of radiation (glow): red; • Light intensity: not less than 0.4 cd/m2; • DC forward voltage: no more than 2.8 V; • Maximum spectral distribution: 0.69 µm; • Maximum allowable direct forward current: 20 mA; • Maximum pulse current at a given pulse duration: 60 mA at 2 ms; • The maximum allowable reverse DC voltage: 2 V; • The maximum allowable pulsed reverse DC voltage: 2 V. | 0.3 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | 200pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | Red | 5mm round | Indication | |||||||||
|
Zener diode KS407G
#11426
|
23543 | СНГ | — |
2 грн.
|
|
— | Silicon zener diode, planar, medium power. The main technical parameters of the KS407G zener diode: • Rated stabilization voltage: 5.1 V at Ist 20 mA; • Stabilization voltage spread: 4.8... 5.4 V; • Zener diode differential resistance: 17 Ohm at Ist 20 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 59 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -40... +85 °С. | 0.1 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | 500мВт | 400pcs | — | — | — | — | — | — | 5V1 | kd2 | — | — | — | — | — | — | — | — | — | |||||||||
|
Zener diode KS630A
#11420
|
23537 | СНГ | — |
12 грн.
|
|
— | Zener diodes KS630A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 130 V in the stabilization current range of 5...38 mA. | 3 | — | — | — | — | — | — | — | — | — | — | Screw | — | — | 5Вт | 100 pieces. | — | — | — | — | — | — | 130V | ks620 | — | — | — | — | — | — | — | — | — | |||||||||
|
Zener diode KS582G
#11419
|
23536 | СНГ | — |
6 грн.
|
|
— | Silicon zener diodes, diffusion-alloy, medium power, precision. | 0.8 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | 720мВт | 80pcs | — | — | — | — | — | — | 82V | — | — | — | — | — | — | — | — | — | — |