Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Working voltage, V | Transistor case type | Transistor type | Mounting type | Appointment | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Capacity | Accuracy | Stabilization voltage | Zener diode housing type | Plug or socket | Number of contacts | Mechanical installation | Type |
|---|
Transistor KT503G
#11439
|
23566 | СНГ | — |
5 грн.
|
|
— | Transistors KT503G silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. | 0.3 | — | — | — | TO92 | Bipolar | DIP | — | NPN | — | — | 350мВт | 1000pcs | 40В | 350мА | 5МГц | 240 | — | — | — | — | — | — | — | — | |||||||||
Transistor KT503V
#11438
|
23565 | СНГ | — |
5 грн.
|
|
— | Transistors KT503V silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. | 0.3 | — | — | — | TO92 | Bipolar | DIP | — | NPN | — | — | 350мВт | 1000pcs | 40В | 350мА | 5МГц | 120 | — | — | — | — | — | — | — | — | |||||||||
Transistor KT502E
#11436
|
23562 | СНГ | — |
5 грн.
|
|
— | Transistors KT502E silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters | 0.3 | — | — | — | TO92 | Bipolar | DIP | — | PNP | — | — | 350мВт | 1000pcs | 80В | 350мА | 5МГц | 120 | — | — | — | — | — | — | — | — | |||||||||
Transistor KT502G
#11435
|
23561 | СНГ | — |
5 грн.
|
|
— | Transistors KT502G silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters | 0.3 | — | — | — | TO92 | Bipolar | DIP | — | PNP | — | — | 350мВт | 1000pcs | 40В | 350мА | 5МГц | 240 | — | — | — | — | — | — | — | — | |||||||||
Transistor KT502V
#11434
|
23560 | СНГ | — |
5 грн.
|
|
— | Transistors KT502V silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters | 0.3 | — | — | — | TO92 | Bipolar | DIP | — | PNP | — | — | 350мВт | 1000pcs | 40В | 350мА | 5МГц | 120 | — | — | — | — | — | — | — | — | |||||||||
Transistor KT502B
#11433
|
23559 | СНГ | — |
5 грн.
|
|
— | Transistors KT502B silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters | 0.3 | — | — | — | TO92 | Bipolar | DIP | — | PNP | — | — | 350мВт | 1000pcs | 25В | 350мА | 5МГц | 240 | — | — | — | — | — | — | — | — | |||||||||
Zener diode KS407G
#11426
|
23543 | СНГ | — |
2 грн.
|
|
— | Silicon zener diode, planar, medium power. The main technical parameters of the KS407G zener diode: • Rated stabilization voltage: 5.1 V at Ist 20 mA; • Stabilization voltage spread: 4.8... 5.4 V; • Zener diode differential resistance: 17 Ohm at Ist 20 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 59 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -40... +85 °С. | 0.1 | — | — | — | — | — | DIP | — | — | — | — | 500мВт | 400pcs | — | — | — | — | — | — | 5V1 | kd2 | — | — | — | — | |||||||||
Zener diode KS630A
#11420
|
23537 | СНГ | — |
12 грн.
|
|
— | Zener diodes KS630A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 130 V in the stabilization current range of 5...38 mA. | 3 | — | — | — | — | — | Screw | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | — | — | 130V | ks620 | — | — | — | — | |||||||||
Zener diode KS582G
#11419
|
23536 | СНГ | — |
6 грн.
|
|
— | Silicon zener diodes, diffusion-alloy, medium power, precision. | 0.8 | — | — | — | — | — | DIP | — | — | — | — | 720мВт | 80pcs | — | — | — | — | — | — | 82V | — | — | — | — | — | |||||||||
Zener diode KS107A stack.
#11418
|
23535 | СНГ | — |
1.50 грн.
|
|
— | • Rated stabilization voltage: 0.7 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.3%/°С; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Working range of ambient temperature: -60... +125 °С. | 0.2 | — | — | — | — | — | DIP | — | — | — | — | 125мВт | 300pcs | — | — | — | — | — | — | 0.7V | kd2 | — | — | — | — | |||||||||
| 23533 | СНГ | — |
3 грн.
|
— | Capacitor metal film polyethylene terephthalate. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. | 2.5 | Flexible Leads | — | 630 | — | — | DIP | — | — | — | — | — | 100 pieces. | — | — | — | — | 100nF (0.1µF) | 5 % | — | — | — | — | — | — | |||||||||||
Chip 541PT1 Ni
#11413
|
23530 | СНГ | — |
75 грн.
|
|
— | Bipolar RAM is based on integral-injection logic. The 541PT1 chips are a one-time programmable read-only memory device with a capacity of 1 kbit (256 x 4). Input and output compatible with TTL circuits. The functional diagram includes address input circuits, a decoder, a multiplexer, control circuits, output circuits, and a 32 x 32 accumulator. | 0.9 | — | SO16 | — | — | — | SMD | Memory | — | — | — | — | 25pcs | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor KP307E Au
#11409
|
23526 | СНГ | — |
22 грн.
|
|
— | KP307E silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. | 0.4 | — | — | — | КТ-1 | Field | DIP | — | MOS n-channel | 27В | 25мА | 250мВт | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor KP303E Ni
#11408
|
23525 | СНГ | — |
10 грн.
|
|
— | KP303E silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. | 0.4 | — | — | — | КТ-1 | Field | DIP | — | MOS n-channel | 25В | 20мА | 200мВт | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Chip KM133LA7
#11407
|
23524 | СНГ | — |
8 грн.
|
|
— | 2 four-input NAND circuits with an open collector output and increased load capacity (display elements). | 0.3 | — | SO14 | — | — | — | SMD | Logics | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Zener diode 2S920A (=KS920A)
#11402
|
23513 | СНГ | — |
7 грн.
|
|
— | Zener diodes 2S920A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 120 V in the stabilization current range of 5...42 mA. | 4.2 | — | — | — | — | — | Screw | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | — | — | 120V | ks620 | — | — | — | — | |||||||||
Zener diode 2S510A (=KS510A)
#11400
|
23511 | СНГ | — |
6 грн.
|
|
— | Zener diodes 2S510A silicon, planar, medium power. Designed to stabilize the rated voltage of 10 V in the stabilization current range of 1...79 mA. | 0.8 | — | — | — | — | — | DIP | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | — | — | 10V | kd-8 | — | — | — | — | |||||||||
Zener diode 2S119A (=KS119A)
#11399
|
23510 | СНГ | — |
15 грн.
|
|
— | Main technical parameters of stabistor 2S119A: • Rated stabilization voltage: 1.9 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.42...-0.2%/°C; • Differential resistance: 15 Ohm at Ist 10 mA; • Minimum permissible stabilization current: 1 mA; • Maximum permissible stabilization current: 100 mA; • Maximum permissible power dissipation: 0.18 W; • Operating range of ambient temperature: -60... +125 °C. | 0.8 | — | — | — | — | — | DIP | — | — | — | — | 180мВт | 100 pieces. | — | — | — | — | — | — | 1V9 | kd-8 | — | — | — | — | |||||||||
Chip KM1816BE48 Au
#11398
|
23509 | СНГ | — |
162 грн.
|
|
— | The KM1816BE48 microcircuit is a single-chip 8-bit microcomputer with PROM with UV erasure with a capacity of 8 kbit (1024x8). | 5.7 | — | DIP40 | — | — | — | DIP | Processors | — | — | — | — | 5 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Microcircuit 298FN13
#11397
|
23508 | СНГ | — |
64 грн.
|
|
— | Low-pass filter of the 2nd order according to the classical scheme on an emitter follower. | 7.5 | — | — | — | — | — | DIP | Filters | — | — | — | — | 10 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Zener diode D814G1
#11387
|
23498 | СНГ | — |
1.50 грн.
|
|
— | Zener diodes D814G1 silicon, medium power. Designed to stabilize the voltage of 10.0-12.0 V. Are issued in the glass case with flexible conclusions. | 0.2 | — | — | — | — | — | DIP | — | — | — | — | 340мВт | 500pcs | — | — | — | — | — | — | 11V | kd2 | — | — | — | — | |||||||||
Transistor KP350V Au
#11377
|
23488 | СНГ | — |
27 грн.
|
|
— | Transistors KP350V are silicon diffuse-planar field-effect transistors with two insulated gates and an n-type channel. Designed for use in amplifiers, generators and microwave converters up to 700 MHz. | 0.4 | — | — | — | КТ-1 | Field | DIP | — | MOS n-channel | — | — | 200мВт | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Microcircuit EKR1533IR35
#11369
|
23477 | СНГ | — |
12 грн.
|
|
— | 8-bit register on D-flip-flops with a common reset input. | 1.3 | — | DIP20 | — | — | — | DIP | Logics | — | — | — | — | 70pcs | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Chip KR142EN18B (=LM337T)
#11366
|
23473 | СНГ | — |
14 грн.
|
|
— | KR142EN18B microcircuits are adjustable voltage regulators of negative polarity with an output voltage of 1.2-6.5 V and a load current of up to 1.5 A. | 2.5 | — | TO-220 | — | — | — | DIP | Nutrition | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
| 23471 | СНГ | — |
54 грн.
|
— | Dual bidirectional high voltage MOS relay, DIP8 package. | 0.5 | — | — | — | — | — | DIP | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
| 22311 | СНГ | — |
54 грн.
|
— | Dual bidirectional high voltage MOS relay, DIP8 package. | 0.5 | — | — | — | — | — | DIP | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
| 23436 | СНГ | — |
16 грн.
|
|
— | Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 19 | — | — | — | — | — | DIP | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | Fork | 15 | To the body | RP | ||||||||||
Connector RP10-7L (socket)
#11328
|
23433 | СНГ | — |
12 грн.
|
|
— | Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 7.5 | — | — | — | — | — | DIP | — | — | — | — | — | 80pcs | — | — | — | — | — | — | — | — | Socket | 7 | To the body | RP | |||||||||
| 23432 | СНГ | — |
16 грн.
|
|
— | Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 19 | — | — | — | — | — | DIP | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | Fork | 15 | To the body | RP | ||||||||||
| 23431 | СНГ | — |
16 грн.
|
|
— | Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 14 | — | — | — | — | — | DIP | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | Fork | 11 | To the body | RP |
![Connector RP10-15"З" (plug with catchers)](/wa-data/public/shop/products/31/13/11331/images/12373/12373.48x48.jpg "Connector RP10-15"З" (plug with catchers)")
