Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Pin type Type of shell Working voltage, V Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Appointment Diode type Structure Drain-source voltage Drain current Power Factory packaging Frequency Capacity Accuracy Stabilization voltage Zener diode housing type Plug or socket Number of contacts Mechanical installation Type Diode design
23535 СНГ —
1.50 грн.
50+1,35 грн.
100+1,20 грн.
250+1,12 грн.
— • Rated stabilization voltage: 0.7 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.3%/°С; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Working range of ambient temperature: -60... +125 °С. 0.2 — — — — — DIP — — — — — — — — 125мВт 300pcs — — — 0.7V kd2 — — — — —
23533 СНГ —
3 грн.
— Capacitor metal film polyethylene terephthalate. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. 2.5 Flexible Leads — 630 — — DIP — — — — — — — — — 100 pieces. — 100nF (0.1µF) 5 % — — — — — — —
23530 СНГ —
75 грн.
10+71,25 грн.
50+67,50 грн.
100+60 грн.
— Bipolar RAM is based on integral-injection logic. The 541PT1 chips are a one-time programmable read-only memory device with a capacity of 1 kbit (256 x 4). Input and output compatible with TTL circuits. The functional diagram includes address input circuits, a decoder, a multiplexer, control circuits, output circuits, and a 32 x 32 accumulator. 0.9 — SO16 — — — SMD — — — Memory — — — — — 25pcs — — — — — — — — — —
23526 СНГ —
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
— KP307E silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. 0.4 — — — КТ-1 Field DIP — — — — — MOS n-channel 27В 25мА 250мВт 100 pieces. — — — — — — — — — —
23525 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— KP303E silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. 0.4 — — — КТ-1 Field DIP — — — — — MOS n-channel 25В 20мА 200мВт 100 pieces. — — — — — — — — — —
23524 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— 2 four-input NAND circuits with an open collector output and increased load capacity (display elements). 0.3 — SO14 — — — SMD — — — Logics — — — — — 100 pieces. — — — — — — — — — —
23513 СНГ —
7 грн.
50+6,30 грн.
100+5,60 грн.
250+5,25 грн.
— Zener diodes 2S920A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 120 V in the stabilization current range of 5...42 mA. 4.2 — — — — — Screw — — — — — — — — 5Вт 100 pieces. — — — 120V ks620 — — — — —
23511 СНГ —
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
— Zener diodes 2S510A silicon, planar, medium power. Designed to stabilize the rated voltage of 10 V in the stabilization current range of 1...79 mA. 0.8 — — — — — DIP — — — — — — — — 1Вт 100 pieces. — — — 10V kd-8 — — — — —
23510 СНГ —
15 грн.
50+13,50 грн.
100+12 грн.
250+11,25 грн.
— Main technical parameters of stabistor 2S119A: • Rated stabilization voltage: 1.9 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.42...-0.2%/°C; • Differential resistance: 15 Ohm at Ist 10 mA; • Minimum permissible stabilization current: 1 mA; • Maximum permissible stabilization current: 100 mA; • Maximum permissible power dissipation: 0.18 W; • Operating range of ambient temperature: -60... +125 °C. 0.8 — — — — — DIP — — — — — — — — 180мВт 100 pieces. — — — 1V9 kd-8 — — — — —
23509 СНГ —
162 грн.
10+153,90 грн.
50+145,80 грн.
100+129,60 грн.
— The KM1816BE48 microcircuit is a single-chip 8-bit microcomputer with PROM with UV erasure with a capacity of 8 kbit (1024x8). 5.7 — DIP40 — — — DIP — — — Processors — — — — — 5 pieces. — — — — — — — — — —
23508 СНГ —
64 грн.
10+60,80 грн.
50+57,60 грн.
100+51,20 грн.
— Low-pass filter of the 2nd order according to the classical scheme on an emitter follower. 7.5 — — — — — DIP — — — Filters — — — — — 10 pieces. — — — — — — — — — —
23498 СНГ —
1.50 грн.
50+1,35 грн.
100+1,20 грн.
250+1,12 грн.
— Zener diodes D814G1 silicon, medium power. Designed to stabilize the voltage of 10.0-12.0 V. Are issued in the glass case with flexible conclusions. 0.2 — — — — — DIP — — — — — — — — 340мВт 500pcs — — — 11V kd2 — — — — —
23488 СНГ —
27 грн.
10+25,65 грн.
50+24,30 грн.
100+21,60 грн.
— Transistors KP350V are silicon diffuse-planar field-effect transistors with two insulated gates and an n-type channel. Designed for use in amplifiers, generators and microwave converters up to 700 MHz. 0.4 — — — КТ-1 Field DIP — — — — — MOS n-channel — — 200мВт 100 pieces. — — — — — — — — — —
23477 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
— 8-bit register on D-flip-flops with a common reset input. 1.3 — DIP20 — — — DIP — — — Logics — — — — — 70pcs — — — — — — — — — —
23473 СНГ —
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
— KR142EN18B microcircuits are adjustable voltage regulators of negative polarity with an output voltage of 1.2-6.5 V and a load current of up to 1.5 A. 2.5 — TO-220 — — — DIP — — — Nutrition — — — — — 100 pieces. — — — — — — — — — —
23471 СНГ —
54 грн.
— Dual bidirectional high voltage MOS relay, DIP8 package. 0.5 — — — — — DIP — — — — — — — — — 100 pieces. — — — — — — — — — —
22311 СНГ —
54 грн.
— Dual bidirectional high voltage MOS relay, DIP8 package. 0.5 — — — — — DIP — — — — — — — — — 100 pieces. — — — — — — — — — —
23436 СНГ —
16 грн.
10+15,20 грн.
20+14,40 грн.
50+13,60 грн.
100+12,80 грн.
— Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 19 — — — — — DIP — — — — — — — — — 20pcs — — — — — Fork 15 To the body RP —
23433 СНГ —
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
— Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 7.5 — — — — — DIP — — — — — — — — — 80pcs — — — — — Socket 7 To the body RP —
23432 СНГ —
16 грн.
10+15,20 грн.
20+14,40 грн.
50+13,60 грн.
100+12,80 грн.
— Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 19 — — — — — DIP — — — — — — — — — 50pcs — — — — — Fork 15 To the body RP —
23431 СНГ —
16 грн.
10+15,20 грн.
20+14,40 грн.
50+13,60 грн.
100+12,80 грн.
— Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 14 — — — — — DIP — — — — — — — — — 50pcs — — — — — Fork 11 To the body RP —
23430 СНГ —
8 грн.
— Capacitor metal film polyethylene terephthalate. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. 6.5 Flexible Leads — 400 — — DIP — — — — — — — — — 100 pieces. — 1µF 10 % — — — — — — —
23429 СНГ —
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
— Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 11 — — — — — DIP — — — — — — — — — 20pcs — — — — — Socket 15 To the body RP —
23428 СНГ —
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
— Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 11 — — — — — DIP — — — — — — — — — 20pcs — — — — — Socket 15 To the body RP —
23427 СНГ —
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
— Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 10.5 — — — — — DIP — — — — — — — — — 20pcs — — — — — Socket 15 To the body RP —
23426 СНГ —
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
— Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 10.5 — — — — — DIP — — — — — — — — — 20pcs — — — — — Socket 15 To the body RP —
23353 СНГ —
81 грн.
50+72,90 грн.
200+64,80 грн.
500+56,70 грн.
— A column of silicon, diffusion, avalanche diodes, pulsed. Designed to convert alternating pulsed voltage with a frequency of up to 1 kHz. 63 — — — — — Screw — 10kV 500mA — High voltage — — — — 20pcs — — — — — — — — — assembly
23351 СНГ —
12 грн.
50+10,80 грн.
200+9,60 грн.
500+8,40 грн.
— Diode KD927A silicon, impulse. Designed for use in pulse devices 0.1 — — — — — DIP КД-2 35V 10mA — Pulse — — — — 4 things. — — — — — — — — — single
23323 СНГ —
54 грн.
— Dual bidirectional high voltage MOS relay, DIP6 package. 0.5 — — — — — DIP — — — — — — — — — 100 pieces. — — — — — — — — — —
23322 СНГ —
24 грн.
10+22,80 грн.
50+21,60 грн.
100+19,20 грн.
— KP302VM silicon planar field transistor with a gate based on pn junction and n-type channel. Designed for use in broadband amplifiers in the frequency range up to 150 MHz, as well as in switching and switching devices. 0.4 — — — КТ-1 Field DIP — — — — — MOS p-channel 20В 30мА 300мВт 100 pieces. 150МГц — — — — — — — — —