Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Transistor case type | Transistor type | Mounting type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Plug or socket | Number of contacts | Mechanical installation | Type |
|---|
| 23321 | СНГ | — |
18 грн.
|
|
— | The 2T208B transistor is used to amplify, generate and convert electrical signals. | 0.3 | КТ-1 | Bipolar | DIP | PNP | 200мВт | 100 pieces. | 20В | 300мА | — | 120 | — | — | — | — | ||||||||||
| 23314 | СНГ | — |
14 грн.
|
|
— | Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 14 | — | — | DIP | — | — | 80pcs | — | — | — | — | Socket | 7 | To the body | RP | ||||||||||
| 23313 | СНГ | — |
16 грн.
|
|
— | Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 19 | — | — | DIP | — | — | 20pcs | — | — | — | — | Socket | 15 | To the body | RP | ||||||||||
| 23312 | СНГ | — |
16 грн.
|
|
— | Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 17.5 | — | — | DIP | — | — | 20pcs | — | — | — | — | Socket | 15 | To the body | RP | ||||||||||
| 23306 | СНГ | — |
14 грн.
|
|
— | Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 14 | — | — | DIP | — | — | 80pcs | — | — | — | — | Socket | 7 | To the body | RP | ||||||||||
|
Connector RP10-7L (plug)
#11182
|
23305 | СНГ | — |
12 грн.
|
|
— | Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 8 | — | — | DIP | — | — | 80pcs | — | — | — | — | Fork | 7 | To the body | RP | |||||||||
| 23304 | СНГ | — |
12 грн.
|
|
— | Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 8 | — | — | DIP | — | — | 80pcs | — | — | — | — | Fork | 7 | To the body | RP | ||||||||||
|
Connector RP10-7L (socket)
#11180
|
23303 | СНГ | — |
12 грн.
|
|
— | Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 5.7 | — | — | DIP | — | — | 80pcs | — | — | — | — | Socket | 7 | To the body | RP | |||||||||
| 23302 | СНГ | — |
12 грн.
|
|
— | Designed for operation in electrical circuits of direct, variable frequency up to 3 MHz and pulse currents up to 1550 V. Maximum operating current per contact, 15A. | 5.7 | — | — | DIP | — | — | 80pcs | — | — | — | — | Socket | 7 | To the body | RP | ||||||||||
| 23299 | СНГ | — |
14 грн.
|
|
— | Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 9.2 | — | — | DIP | — | — | 80pcs | — | — | — | — | Socket | 11 | To the body | RP | ||||||||||
| 23298 | СНГ | — |
14 грн.
|
|
— | Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 9.2 | — | — | DIP | — | — | 80pcs | — | — | — | — | Socket | 11 | To the body | RP | ||||||||||
| 23296 | СНГ | — |
20 грн.
|
|
— | Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 22 | — | — | DIP | — | — | 20pcs | — | — | — | — | Socket | 15 | To the body | RP | ||||||||||
|
Connector RP10-15 (socket)
#11173
|
23295 | СНГ | — |
18 грн.
|
|
— | Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 13 | — | — | DIP | — | — | 20pcs | — | — | — | — | Socket | 15 | To the body | RP | |||||||||
|
Transistor KT117B au
#10853
|
23050 | СНГ | — |
22 грн.
|
|
— | Transistor KT117B silicon epitaxial-planar single-junction with an n-type base. The transistor is intended for use in low-power generators. | 0.5 | КТ-1 | Bipolar | DIP | n-base | 300мВт | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||
| 23049 | СНГ | — |
30 грн.
|
|
— | Transistor 2T3108B silicon epitaxial-planar structure pnp amplifying with a normalized noise figure at a frequency of 100 MHz. Designed for use in logarithmic video amplifiers and high frequency linear amplifiers. | 0.5 | КТ-1 | Bipolar | DIP | PNP | 300мВт | 100 pieces. | 45В | 200мА | 250МГц | 150 | — | — | — | — | ||||||||||
|
Transistor KT3117A au
#10851
|
23048 | СНГ | — |
40 грн.
|
|
— | Transistor KT3117A silicon epitaxial-planar structure npn pulse. Designed for use in pulse and switching devices. | 0.5 | КТ-1 | Bipolar | DIP | NPN | 300мВт | 100 pieces. | 60В | 400мА | 200МГц | 200 | — | — | — | — | |||||||||
|
Transistor GT404G
#10850
|
23047 | СНГ | — |
45 грн.
|
|
— | Transistor GT404G germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. | 3.5 | — | Bipolar | DIP | NPN | 600мВт | 50pcs | 40В | 500мА | 1МГц | 150 | — | — | — | — | |||||||||
|
Transistor GT404B
#10849
|
23046 | СНГ | — |
42 грн.
|
|
— | Transistor GT404B germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. | 3.5 | — | Bipolar | DIP | NPN | 600мВт | 50pcs | 25В | 500мА | 1МГц | 150 | — | — | — | — | |||||||||
|
Transistor GT404A
#10848
|
23045 | СНГ | — |
42 грн.
|
|
— | Transistor GT404A germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. | 3.5 | — | Bipolar | DIP | NPN | 600мВт | 50pcs | 25В | 500мА | 1МГц | 80 | — | — | — | — | |||||||||
|
Transistor MP35
#10845
|
23042 | СНГ | — |
5 грн.
|
|
— | Transistor germanium alloy npn amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. | 1.8 | КТЮ-3-3 | Bipolar | DIP | NPN | 150мВт | 100 pieces. | 15В | 20мА | 0,5МГц | 125 | — | — | — | — | |||||||||
|
Transistor P403
#10844
|
23041 | СНГ | — |
8 грн.
|
|
— | Transistor P403 - germanium, amplifying low-power, high-frequency, structures - pnp. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | 100мВт | 100 pieces. | 10В | 20мА | 120МГц | 100 | — | — | — | — | |||||||||
|
Transistor GT403E
#10842
|
23039 | СНГ | — |
16 грн.
|
|
— | Transistor GT403E germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. | 3 | — | Bipolar | DIP | PNP | 4Вт | 100 pieces. | 45В | 1,25А | — | 30 | — | — | — | — | |||||||||
|
Transistor GT403D
#10841
|
23038 | СНГ | — |
17 грн.
|
|
— | Transistor GT403D germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. | 3 | — | Bipolar | DIP | PNP | 4Вт | 100 pieces. | 45В | 1,25А | — | 150 | — | — | — | — | |||||||||
|
Transistor MP39
#10838
|
23035 | СНГ | — |
6 грн.
|
|
— | Transistor germanium alloyed pnp amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | 150мВт | 100 pieces. | 15В | 30мА | 0,5МГц | 12 | — | — | — | — | |||||||||
|
Transistor MP38A
#10837
|
23034 | СНГ | — |
6 грн.
|
|
— | Transistor germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. | 1.8 | КТЮ-3-3 | Bipolar | DIP | NPN | 150мВт | 100 pieces. | 15В | 20мА | 2МГц | 100 | — | — | — | — | |||||||||
|
Transistor MP41A
#10836
|
23033 | СНГ | — |
6 грн.
|
|
— | Transistor MP41A germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | 150мВт | 100 pieces. | 15В | 30мА | 1МГц | 100 | — | — | — | — | |||||||||
|
Transistor MP39B
#10835
|
23032 | СНГ | — |
8 грн.
|
|
— | Transistor germanium alloyed pnp amplifying low-frequency with a noise figure normalized at a frequency of 1 kHz. Designed to amplify low frequency signals. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | 150мВт | 100 pieces. | 15В | 30мА | 0,5МГц | 60 | — | — | — | — | |||||||||
|
Transistor MP16B
#10832
|
23028 | СНГ | — |
6 грн.
|
|
— | Transistor MP16B germanium low-frequency low-power alloyed pnp switching. Designed for application in switching circuit and pulse shaping. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | 200мВт | 100 pieces. | 15В | 100мА | 1МГц | 100 | — | — | — | — | |||||||||
|
Transistor MP16A
#10831
|
23027 | СНГ | — |
6 грн.
|
|
— | Transistor MP16A germanium low-frequency low-power alloyed pnp switching. Designed for application in switching circuit and pulse shaping. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | 200мВт | 100 pieces. | 15В | 100мА | 1МГц | 50 | — | — | — | — | |||||||||
|
Transistor MP11
#10828
|
23024 | СНГ | — |
8 грн.
|
|
— | Transistor MP11 germanium alloyed npn amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. | 1.8 | КТЮ-3-3 | Bipolar | DIP | NPN | 150мВт | 100 pieces. | 15В | 20мА | 2МГц | 55 | — | — | — | — |