Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Pin type Working voltage, V Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Diode type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Capacity Accuracy Plug or socket Number of contacts Mechanical installation Type Diode design
23430 СНГ
8 грн.
Capacitor metal film polyethylene terephthalate. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. 6.5 Flexible Leads 400 DIP 100 pieces. 1µF 10 %
23429 СНГ
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 11 DIP 20pcs Socket 15 To the body RP
23428 СНГ
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 11 DIP 20pcs Socket 15 To the body RP
23427 СНГ
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 10.5 DIP 20pcs Socket 15 To the body RP
23426 СНГ
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 10.5 DIP 20pcs Socket 15 To the body RP
23353 СНГ
81 грн.
50+72,90 грн.
200+64,80 грн.
500+56,70 грн.
A column of silicon, diffusion, avalanche diodes, pulsed. Designed to convert alternating pulsed voltage with a frequency of up to 1 kHz. 63 Screw 10kV 500mA High voltage 20pcs assembly
23351 СНГ
12 грн.
50+10,80 грн.
200+9,60 грн.
500+8,40 грн.
Diode KD927A silicon, impulse. Designed for use in pulse devices 0.1 DIP КД-2 35V 10mA Pulse 4 things. single
23323 СНГ
54 грн.
Dual bidirectional high voltage MOS relay, DIP6 package. 0.5 DIP 100 pieces.
23322 СНГ
24 грн.
10+22,80 грн.
50+21,60 грн.
100+19,20 грн.
KP302VM silicon planar field transistor with a gate based on pn junction and n-type channel. Designed for use in broadband amplifiers in the frequency range up to 150 MHz, as well as in switching and switching devices. 0.4 КТ-1 Field DIP MOS p-channel 20В 30мА 300мВт 100 pieces. 150МГц
23321 СНГ
18 грн.
10+17,10 грн.
50+16,20 грн.
100+14,40 грн.
The 2T208B transistor is used to amplify, generate and convert electrical signals. 0.3 КТ-1 Bipolar DIP PNP 200мВт 100 pieces. 20В 300мА 120
23314 СНГ
14 грн.
10+13,30 грн.
20+12,60 грн.
50+11,90 грн.
100+11,20 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 14 DIP 80pcs Socket 7 To the body RP
23313 СНГ
16 грн.
10+15,20 грн.
20+14,40 грн.
50+13,60 грн.
100+12,80 грн.
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 19 DIP 20pcs Socket 15 To the body RP
23312 СНГ
16 грн.
10+15,20 грн.
20+14,40 грн.
50+13,60 грн.
100+12,80 грн.
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 17.5 DIP 20pcs Socket 15 To the body RP
23306 СНГ
14 грн.
10+13,30 грн.
20+12,60 грн.
50+11,90 грн.
100+11,20 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 14 DIP 80pcs Socket 7 To the body RP
23305 СНГ
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 8 DIP 80pcs Fork 7 To the body RP
23304 СНГ
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 8 DIP 80pcs Fork 7 To the body RP
23303 СНГ
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 5.7 DIP 80pcs Socket 7 To the body RP
23302 СНГ
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
Designed for operation in electrical circuits of direct, variable frequency up to 3 MHz and pulse currents up to 1550 V. Maximum operating current per contact, 15A. 5.7 DIP 80pcs Socket 7 To the body RP
23299 СНГ
14 грн.
10+13,30 грн.
20+12,60 грн.
50+11,90 грн.
100+11,20 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 9.2 DIP 80pcs Socket 11 To the body RP
23298 СНГ
14 грн.
10+13,30 грн.
20+12,60 грн.
50+11,90 грн.
100+11,20 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 9.2 DIP 80pcs Socket 11 To the body RP
23296 СНГ
20 грн.
10+19 грн.
20+18 грн.
50+17 грн.
100+16 грн.
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 22 DIP 20pcs Socket 15 To the body RP
23295 СНГ
18 грн.
10+17,10 грн.
20+16,20 грн.
50+15,30 грн.
100+14,40 грн.
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 13 DIP 20pcs Socket 15 To the body RP
23050 СНГ
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
Transistor KT117B silicon epitaxial-planar single-junction with an n-type base. The transistor is intended for use in low-power generators. 0.5 КТ-1 Bipolar DIP n-base 300мВт 100 pieces.
23049 СНГ
30 грн.
10+28,50 грн.
50+27 грн.
100+24 грн.
Transistor 2T3108B silicon epitaxial-planar structure pnp amplifying with a normalized noise figure at a frequency of 100 MHz. Designed for use in logarithmic video amplifiers and high frequency linear amplifiers. 0.5 КТ-1 Bipolar DIP PNP 300мВт 100 pieces. 45В 200мА 250МГц 150
23048 СНГ
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
Transistor KT3117A silicon epitaxial-planar structure npn pulse. Designed for use in pulse and switching devices. 0.5 КТ-1 Bipolar DIP NPN 300мВт 100 pieces. 60В 400мА 200МГц 200
23047 СНГ
45 грн.
10+42,75 грн.
50+40,50 грн.
100+36 грн.
Transistor GT404G germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 Bipolar DIP NPN 600мВт 50pcs 40В 500мА 1МГц 150
23046 СНГ
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
Transistor GT404B germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 Bipolar DIP NPN 600мВт 50pcs 25В 500мА 1МГц 150
23045 СНГ
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
Transistor GT404A germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 Bipolar DIP NPN 600мВт 50pcs 25В 500мА 1МГц 80
23042 СНГ
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor germanium alloy npn amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 15В 20мА 0,5МГц 125
23041 СНГ
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistor P403 - germanium, amplifying low-power, high-frequency, structures - pnp. 1.8 КТЮ-3-3 Bipolar DIP PNP 100мВт 100 pieces. 10В 20мА 120МГц 100