Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Plug or socket Number of contacts Mechanical installation Type
23321 СНГ —
18 грн.
10+17,10 грн.
50+16,20 грн.
100+14,40 грн.
— The 2T208B transistor is used to amplify, generate and convert electrical signals. 0.3 КТ-1 Bipolar DIP PNP 200мВт 100 pieces. 20В 300мА — 120 — — — —
23314 СНГ —
14 грн.
10+13,30 грн.
20+12,60 грн.
50+11,90 грн.
100+11,20 грн.
— Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 14 — — DIP — — 80pcs — — — — Socket 7 To the body RP
23313 СНГ —
16 грн.
10+15,20 грн.
20+14,40 грн.
50+13,60 грн.
100+12,80 грн.
— Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 19 — — DIP — — 20pcs — — — — Socket 15 To the body RP
23312 СНГ —
16 грн.
10+15,20 грн.
20+14,40 грн.
50+13,60 грн.
100+12,80 грн.
— Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 17.5 — — DIP — — 20pcs — — — — Socket 15 To the body RP
23306 СНГ —
14 грн.
10+13,30 грн.
20+12,60 грн.
50+11,90 грн.
100+11,20 грн.
— Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 14 — — DIP — — 80pcs — — — — Socket 7 To the body RP
23305 СНГ —
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
— Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 8 — — DIP — — 80pcs — — — — Fork 7 To the body RP
23304 СНГ —
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
— Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 8 — — DIP — — 80pcs — — — — Fork 7 To the body RP
23303 СНГ —
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
— Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 5.7 — — DIP — — 80pcs — — — — Socket 7 To the body RP
23302 СНГ —
12 грн.
10+11,40 грн.
20+10,80 грн.
50+10,20 грн.
100+9,60 грн.
— Designed for operation in electrical circuits of direct, variable frequency up to 3 MHz and pulse currents up to 1550 V. Maximum operating current per contact, 15A. 5.7 — — DIP — — 80pcs — — — — Socket 7 To the body RP
23299 СНГ —
14 грн.
10+13,30 грн.
20+12,60 грн.
50+11,90 грн.
100+11,20 грн.
— Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 9.2 — — DIP — — 80pcs — — — — Socket 11 To the body RP
23298 СНГ —
14 грн.
10+13,30 грн.
20+12,60 грн.
50+11,90 грн.
100+11,20 грн.
— Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 9.2 — — DIP — — 80pcs — — — — Socket 11 To the body RP
23296 СНГ —
20 грн.
10+19 грн.
20+18 грн.
50+17 грн.
100+16 грн.
— Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 22 — — DIP — — 20pcs — — — — Socket 15 To the body RP
23295 СНГ —
18 грн.
10+17,10 грн.
20+16,20 грн.
50+15,30 грн.
100+14,40 грн.
— Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 13 — — DIP — — 20pcs — — — — Socket 15 To the body RP
23050 СНГ —
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
— Transistor KT117B silicon epitaxial-planar single-junction with an n-type base. The transistor is intended for use in low-power generators. 0.5 КТ-1 Bipolar DIP n-base 300мВт 100 pieces. — — — — — — — —
23049 СНГ —
30 грн.
10+28,50 грн.
50+27 грн.
100+24 грн.
— Transistor 2T3108B silicon epitaxial-planar structure pnp amplifying with a normalized noise figure at a frequency of 100 MHz. Designed for use in logarithmic video amplifiers and high frequency linear amplifiers. 0.5 КТ-1 Bipolar DIP PNP 300мВт 100 pieces. 45В 200мА 250МГц 150 — — — —
23048 СНГ —
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
— Transistor KT3117A silicon epitaxial-planar structure npn pulse. Designed for use in pulse and switching devices. 0.5 КТ-1 Bipolar DIP NPN 300мВт 100 pieces. 60В 400мА 200МГц 200 — — — —
23047 СНГ —
45 грн.
10+42,75 грн.
50+40,50 грн.
100+36 грн.
— Transistor GT404G germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP NPN 600мВт 50pcs 40В 500мА 1МГц 150 — — — —
23046 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
— Transistor GT404B germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP NPN 600мВт 50pcs 25В 500мА 1МГц 150 — — — —
23045 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
— Transistor GT404A germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP NPN 600мВт 50pcs 25В 500мА 1МГц 80 — — — —
23042 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
— Transistor germanium alloy npn amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 15В 20мА 0,5МГц 125 — — — —
23041 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— Transistor P403 - germanium, amplifying low-power, high-frequency, structures - pnp. 1.8 КТЮ-3-3 Bipolar DIP PNP 100мВт 100 pieces. 10В 20мА 120МГц 100 — — — —
23039 СНГ —
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
— Transistor GT403E germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — Bipolar DIP PNP 4Вт 100 pieces. 45В 1,25А — 30 — — — —
23038 СНГ —
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
— Transistor GT403D germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — Bipolar DIP PNP 4Вт 100 pieces. 45В 1,25А — 150 — — — —
23035 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Transistor germanium alloyed pnp amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 30мА 0,5МГц 12 — — — —
23034 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Transistor germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 15В 20мА 2МГц 100 — — — —
23033 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Transistor MP41A germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 30мА 1МГц 100 — — — —
23032 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— Transistor germanium alloyed pnp amplifying low-frequency with a noise figure normalized at a frequency of 1 kHz. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 30мА 0,5МГц 60 — — — —
23028 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Transistor MP16B germanium low-frequency low-power alloyed pnp switching. Designed for application in switching circuit and pulse shaping. 1.8 КТЮ-3-3 Bipolar DIP PNP 200мВт 100 pieces. 15В 100мА 1МГц 100 — — — —
23027 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Transistor MP16A germanium low-frequency low-power alloyed pnp switching. Designed for application in switching circuit and pulse shaping. 1.8 КТЮ-3-3 Bipolar DIP PNP 200мВт 100 pieces. 15В 100мА 1МГц 50 — — — —
23024 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— Transistor MP11 germanium alloyed npn amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 15В 20мА 2МГц 55 — — — —