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Brand «СНГ»

Results: 4144

Sort by: New & Popular Name Price Bestsellers Customer rating Date added In stock
MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor GT402E
Transistor GT402E
#10827
 23023 СНГ —
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
 — Transistor GT402E germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP — — 300мВт 50pcs 25В 500мА 1МГц 150
Transistor KT815V
Transistor KT815V
#10826
 23022 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor KT815V silicon mesa-epitaxial-planar structure npn amplifying. 0.7 TO126 Bipolar DIP NPN — — 10Вт 200pcs 70В 1.5А 3МГц 40
Transistor GT402G
Transistor GT402G
#10825
 23021 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT402G germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP — — 300мВт 50pcs 40В 500мА 1МГц 150
Transistor GT402V
Transistor GT402V
#10824
 23020 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT402V germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP — — 300мВт 50pcs 40В 500мА 1МГц 80
Transistor GT402B
Transistor GT402B
#10823
 23019 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT402B germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP — — 300мВт 50pcs 25В 500мА 1МГц 150
Transistor GT402A
Transistor GT402A
#10822
 23018 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT402A germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP — — 300мВт 50pcs 25В 500мА 1МГц 80
Transistor MP21E
Transistor MP21E
#10819
 23015 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — Transistor MP21E germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 70В 100мА 0,7МГц 150
Transistor KT815A
Transistor KT815A
#10807
 22997 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistor KT815A silicon mesa-epitaxial-planar structure npn amplifying. 0.7 TO126 Bipolar DIP NPN — — 10Вт 200pcs 40В 1.5А 3МГц 40
Transistor KT814A
Transistor KT814A
#10806
 22996 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor KT814A silicon mesaepitaxial-planar structure pnp amplifying. 0.7 TO126 Bipolar DIP PNP — — 10Вт 200pcs 25В 1.5А 3МГц 40
Transistor KT814V
Transistor KT814V
#10805
 22995 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor KT814V silicon mesaepitaxial-planar structure pnp amplifying. 0.7 TO126 Bipolar DIP PNP — — 10Вт 200pcs 60В 1.5А 3МГц 40
Transistor KT605BM
Transistor KT605BM
#10804
 22994 СНГ —
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
 — Transistor silicon mezaplanar structure npn. Designed for use in amplifiers, pulse and high-frequency switching devices. 0.7 TO126 Bipolar DIP NPN — — 400мВт 200pcs 250В 100мА 40МГц 120
Transistor KT3102DM
Transistor KT3102DM
#10803
 22993 СНГ —
2.50 грн.
10+2,37 грн.
50+2,25 грн.
100+2 грн.
 — 0.3 TO92 Bipolar DIP NPN — — 250мВт 1000pcs 30В 200мА — 500
Transistor KT815G
Transistor KT815G
#10802
 22992 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Transistor KT815G silicon mesa-epitaxial-planar structure npn amplifying. 0.7 TO126 Bipolar DIP NPN — — 10Вт 200pcs 100В 1.5А 3МГц 30
Transistor KT814B
Transistor KT814B
#10801
 22991 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor KT814B silicon mesaepitaxial-planar structure pnp amplifying. 0.7 TO126 Bipolar DIP PNP — — 10Вт 200pcs 40В 1.5А 3МГц 40
Transistor KT816B
Transistor KT816B
#10800
 22990 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — Transistor KT816B silicon mesaepitaxial-planar structure pnp amplifying. 0.7 TO126 Bipolar DIP PNP — — 25Вт 200pcs 45В 3А 3МГц 25
Transistor KT644B
Transistor KT644B
#10799
 22989 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistor KT644B silicon epitaxial-planar structure pnp universal. — TO126 Bipolar DIP PNP — — 1Вт 200pcs 60В 1А 200МГц 300
Transistor KT940A
Transistor KT940A
#10798
 22988 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Silicon epitaxial-planar bipolar structure npn amplifying. 0.7 TO126 Bipolar DIP NPN — — 10Вт 200pcs 300В 100мА 90МГц 25
Transistor KT818B
Transistor KT818B
#10794
 22983 СНГ —
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
 — Transistor silicon mesaepitaxial-planar structure pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 60Вт 100 pieces. 50В 10А 3МГц 20
Transistor KT606A
Transistor KT606A
#10792
 22981 СНГ —
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
 — Transistor silicon epitaxial-planar structure npn generator. Designed for use in power amplifiers, frequency multipliers and self-oscillators at frequencies above 100 MHz with a supply voltage of 28 V. 5 КТ-4-2 Bipolar Screw NPN — — 2.5Вт 50pcs 65В 400мА 350МГц 15
Transistor KT818G
Transistor KT818G
#10790
 22979 СНГ —
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
 — Transistor silicon mesaepitaxial-planar structure pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 60Вт 100 pieces. 100В 10А 3МГц 12
Transistor KT819A
Transistor KT819A
#10789
 22978 СНГ —
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
 — Transistor silicon mesaepitaxial-planar structure npn switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP NPN — — 60Вт 100 pieces. 40В 10А 3МГц 15
Transistor KT819G
Transistor KT819G
#10788
 22977 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
 — Transistor silicon mesaepitaxial-planar structure npn switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP NPN — — 60Вт 100 pieces. 100В 10А 3МГц 12
Transistor KT835B
Transistor KT835B
#10787
 22975 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Amplifying silicon mesaepitaxial-planar structure pnp transistor. Designed for use in amplifiers, converters and pulse devices. 2.5 TO220 Bipolar DIP PNP — — 25Вт 100 pieces. 45В 3А 1МГц 100
Transistor KT606B
Transistor KT606B
#10786
 22974 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — Transistor silicon epitaxial-planar structure npn generator. Designed for use in power amplifiers, frequency multipliers and self-oscillators at frequencies above 100 MHz with a supply voltage of 28 V. 5 КТ-4-2 Bipolar Screw NPN — — 2.5Вт 50pcs 65В 400мА 350МГц 15
Transistor MP38
Transistor MP38
#10783
 22971 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 15В 20мА 2МГц 50
Transistor KT805IM
Transistor KT805IM
#10781
 22969 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistors silicon epitaxial structures npn switching. Designed for use in line-scan output stages, ignition devices for internal combustion engines and other switching devices. 2.5 TO220 Bipolar DIP NPN — — 30Вт 100 pieces. 70В 5А 20МГц 25
Power regulator AC 220V 1kW
Power regulator AC 220V 1kW
#10773
 22843 СНГ —
43 грн.
 — 23/50(with handle)x36x25mm; 220Vac; 4A A set of parts, board, diagram. 16 — — DIP — — — — 1 PC. — — — —
Transistor KP301V Au
Transistor KP301V Au
#10768
 22838 СНГ —
28 грн.
10+26,60 грн.
50+25,20 грн.
100+22,40 грн.
 — Silicon planar field-effect transistors with an insulated gate and an induced p-type channel. Designed for use in the input stages of low-noise amplifiers, nonlinear low-signal circuits, stages with high input impedance. 0.43 КТ-14 Field DIP MOS p-channel 20В 15мА 200мВт 100 pieces. — — — —
Transistor KT315R
Transistor KT315R
#10736
 — СНГ —
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
 — Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 КТ-13 Bipolar DIP NPN — — 150мВт 800 pcs. 35В 100мА 250МГц 350
Transistor KT315D
Transistor KT315D
#10735
 23557 СНГ —
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
 — Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 КТ-13 Bipolar DIP NPN — — 150мВт 800 pcs. 40В 100мА 250МГц 90