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Brand «СНГ»

Results: 4144

Sort by: New & Popular Name Price Bestsellers Customer rating Date added In stock
MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor GT403E
Transistor GT403E
#10842
 23039 СНГ —
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
 — Transistor GT403E germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — Bipolar DIP PNP 4Вт 100 pieces. 45В 1,25А — 30
Transistor GT403D
Transistor GT403D
#10841
 23038 СНГ —
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
 — Transistor GT403D germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — Bipolar DIP PNP 4Вт 100 pieces. 45В 1,25А — 150
Transistor MP39
Transistor MP39
#10838
 23035 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor germanium alloyed pnp amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 30мА 0,5МГц 12
Transistor MP38A
Transistor MP38A
#10837
 23034 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 15В 20мА 2МГц 100
Transistor MP41A
Transistor MP41A
#10836
 23033 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor MP41A germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 30мА 1МГц 100
Transistor MP39B
Transistor MP39B
#10835
 23032 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Transistor germanium alloyed pnp amplifying low-frequency with a noise figure normalized at a frequency of 1 kHz. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 30мА 0,5МГц 60
Transistor MP16B
Transistor MP16B
#10832
 23028 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor MP16B germanium low-frequency low-power alloyed pnp switching. Designed for application in switching circuit and pulse shaping. 1.8 КТЮ-3-3 Bipolar DIP PNP 200мВт 100 pieces. 15В 100мА 1МГц 100
Transistor MP16A
Transistor MP16A
#10831
 23027 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor MP16A germanium low-frequency low-power alloyed pnp switching. Designed for application in switching circuit and pulse shaping. 1.8 КТЮ-3-3 Bipolar DIP PNP 200мВт 100 pieces. 15В 100мА 1МГц 50
Transistor MP11
Transistor MP11
#10828
 23024 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Transistor MP11 germanium alloyed npn amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 15В 20мА 2МГц 55
Transistor GT402E
Transistor GT402E
#10827
 23023 СНГ —
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
 — Transistor GT402E germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP 300мВт 50pcs 25В 500мА 1МГц 150
Transistor KT815V
Transistor KT815V
#10826
 23022 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor KT815V silicon mesa-epitaxial-planar structure npn amplifying. 0.7 TO126 Bipolar DIP NPN 10Вт 200pcs 70В 1.5А 3МГц 40
Transistor GT402G
Transistor GT402G
#10825
 23021 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT402G germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP 300мВт 50pcs 40В 500мА 1МГц 150
Transistor GT402V
Transistor GT402V
#10824
 23020 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT402V germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP 300мВт 50pcs 40В 500мА 1МГц 80
Transistor GT402B
Transistor GT402B
#10823
 23019 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT402B germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP 300мВт 50pcs 25В 500мА 1МГц 150
Transistor GT402A
Transistor GT402A
#10822
 23018 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT402A germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP 300мВт 50pcs 25В 500мА 1МГц 80
Transistor MP21E
Transistor MP21E
#10819
 23015 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — Transistor MP21E germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 70В 100мА 0,7МГц 150
Transistor KT815A
Transistor KT815A
#10807
 22997 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistor KT815A silicon mesa-epitaxial-planar structure npn amplifying. 0.7 TO126 Bipolar DIP NPN 10Вт 200pcs 40В 1.5А 3МГц 40
Transistor KT814A
Transistor KT814A
#10806
 22996 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor KT814A silicon mesaepitaxial-planar structure pnp amplifying. 0.7 TO126 Bipolar DIP PNP 10Вт 200pcs 25В 1.5А 3МГц 40
Transistor KT814V
Transistor KT814V
#10805
 22995 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor KT814V silicon mesaepitaxial-planar structure pnp amplifying. 0.7 TO126 Bipolar DIP PNP 10Вт 200pcs 60В 1.5А 3МГц 40
Transistor KT605BM
Transistor KT605BM
#10804
 22994 СНГ —
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
 — Transistor silicon mezaplanar structure npn. Designed for use in amplifiers, pulse and high-frequency switching devices. 0.7 TO126 Bipolar DIP NPN 400мВт 200pcs 250В 100мА 40МГц 120
Transistor KT3102DM
Transistor KT3102DM
#10803
 22993 СНГ —
2.50 грн.
10+2,37 грн.
50+2,25 грн.
100+2 грн.
 — 0.3 TO92 Bipolar DIP NPN 250мВт 1000pcs 30В 200мА — 500
Transistor KT815G
Transistor KT815G
#10802
 22992 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Transistor KT815G silicon mesa-epitaxial-planar structure npn amplifying. 0.7 TO126 Bipolar DIP NPN 10Вт 200pcs 100В 1.5А 3МГц 30
Transistor KT814B
Transistor KT814B
#10801
 22991 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor KT814B silicon mesaepitaxial-planar structure pnp amplifying. 0.7 TO126 Bipolar DIP PNP 10Вт 200pcs 40В 1.5А 3МГц 40
Transistor KT816B
Transistor KT816B
#10800
 22990 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — Transistor KT816B silicon mesaepitaxial-planar structure pnp amplifying. 0.7 TO126 Bipolar DIP PNP 25Вт 200pcs 45В 3А 3МГц 25
Transistor KT644B
Transistor KT644B
#10799
 22989 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistor KT644B silicon epitaxial-planar structure pnp universal. — TO126 Bipolar DIP PNP 1Вт 200pcs 60В 1А 200МГц 300
Transistor KT940A
Transistor KT940A
#10798
 22988 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Silicon epitaxial-planar bipolar structure npn amplifying. 0.7 TO126 Bipolar DIP NPN 10Вт 200pcs 300В 100мА 90МГц 25
Transistor KT818B
Transistor KT818B
#10794
 22983 СНГ —
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
 — Transistor silicon mesaepitaxial-planar structure pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP 60Вт 100 pieces. 50В 10А 3МГц 20
Transistor KT606A
Transistor KT606A
#10792
 22981 СНГ —
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
 — Transistor silicon epitaxial-planar structure npn generator. Designed for use in power amplifiers, frequency multipliers and self-oscillators at frequencies above 100 MHz with a supply voltage of 28 V. 5 КТ-4-2 Bipolar Screw NPN 2.5Вт 50pcs 65В 400мА 350МГц 15
Transistor KT818G
Transistor KT818G
#10790
 22979 СНГ —
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
 — Transistor silicon mesaepitaxial-planar structure pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP 60Вт 100 pieces. 100В 10А 3МГц 12
Transistor KT819A
Transistor KT819A
#10789
 22978 СНГ —
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
 — Transistor silicon mesaepitaxial-planar structure npn switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP NPN 60Вт 100 pieces. 40В 10А 3МГц 15